JPWO2018139027A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 230000005684 electric field Effects 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000009826 distribution Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 188
- 239000011229 interlayer Substances 0.000 claims description 19
- 230000007423 decrease Effects 0.000 claims description 3
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 238000011084 recovery Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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Abstract
Description
特許文献1 特開平9−232597号公報
図2は、実施例1に係る半導体装置100の構成の一例を示す。本例のガードリング32は、12個のガードリング32a〜ガードリング32l(活性部20側から順に、32a、32b・・・と符号を付す)を有する。また、フィールドプレート層34は、12個のフィールドプレート層34a〜フィールドプレート層34l(活性部20側から順に、34a、34b・・・と符号を付す))を有する。半導体装置100のエッジ側の端部には、チャネルストッパ50が設けられている。
図3は、比較例1に係る半導体装置500の構成を示す。本例の半導体装置500は、おもて面側電極502、ウェル層542、複数のガードリング532、複数のフィールドプレート層534およびチャネルストッパ550を備える。本例の半導体装置500は、全てのフィールドプレート層534が活性部側に張り出している点で実施例1に係る半導体装置100と異なる。
Claims (13)
- 半導体基板に設けられた活性部と、
前記半導体基板のおもて面側の終端に設けられ、該終端の電界を緩和する終端構造部と
を備え、
前記終端構造部のおもて面側の電界分布は、定格電圧印加時に、前記活性部側の端部の電界が該おもて面側の電界分布の最大値よりも小さくなっている
半導体装置。 - 前記終端構造部の電界分布は、前記終端構造部の中心よりも、前記活性部と反対のエッジ側に電界の最大ピークを有する
請求項1に記載の半導体装置。 - 前記終端構造部は、
前記活性部側から前記活性部と反対のエッジ側に並んで配列された複数のガードリングと、
前記活性部側から前記エッジ側に並んで配列され、前記複数のガードリングにそれぞれ電気的に接続された複数の第1フィールドプレート層と
を備え、
前記複数の第1フィールドプレート層のうち、前記活性部側の第1フィールドプレート層は、前記複数のガードリングのうち対応するガードリングよりも前記エッジ側に張り出し、前記エッジ側の第1フィールドプレート層は、前記複数のガードリングのうち対応するガードリングよりも前記活性部側に張り出している
請求項1又は2に記載の半導体装置。 - 前記複数の第1フィールドプレート層のうち、前記活性部側の第1フィールドプレート層は、前記エッジ側に向けて前記第1フィールドプレート層の張り出し量が順に小さくなり、
前記複数の第1フィールドプレート層のうち、前記エッジ側の第1フィールドプレート層は、前記活性部側に向けて前記第1フィールドプレート層の張り出し量が順に小さくなる
請求項3に記載の半導体装置。 - 前記複数の第1フィールドプレート層のうち、もっとも前記エッジ側の第1フィールドプレート層は、前記活性部側に張り出すと共に前記エッジ側にも張り出している
請求項3又は4に記載の半導体装置。 - 前記半導体基板のおもて面側であって、前記活性部と前記終端構造部との間に設けられた耐量構造部をさらに備える
請求項3から5のいずれか一項に記載の半導体装置。 - 前記半導体基板は、第1導電型の半導体基板のおもて面側に該第1導電型と異なる第2導電型の第2導電型層を少なくとも形成したものであり、
前記耐量構造部は、前記第2導電型層としてウェル層を有する
請求項6に記載の半導体装置。 - 前記半導体基板のおもて面上に設けられた層間絶縁膜と、
前記層間絶縁膜上に設けられ、前記ウェル層と電気的に接続された第2フィールドプレート層をさらに備え、
前記第2フィールドプレート層は、前記ウェル層よりも前記エッジ側に張り出している
請求項7に記載の半導体装置。 - 前記第2フィールドプレート層と該第2フィールドプレート層に隣接する前記第1フィールドプレート層との間、及び前記第1フィールドプレート層同士の間が同一の間隔である
請求項8に記載の半導体装置。 - 前記複数の第1フィールドプレート層は、前記エッジ側ほど幅が大きくなっている
請求項7から9のいずれか一項に記載の半導体装置。 - 前記複数のガードリングは、その幅が同一である
請求項7から10のいずれか一項に記載の半導体装置。 - 前記ウェル層と該ウェル層に隣接する前記ガードリングの間、及び前記ガードリング同士の間の間隔は、前記エッジ側ほど大きくなっている
請求項7から11のいずれか一項に記載の半導体装置。 - 前記終端構造部のおもて面側の電界分布は、定格電圧印加時に、前記ウェル層と該ウェル層に隣接する前記ガードリングの間、及び前記ガードリング同士の間にパルス状の波形を有し、該パルス状の波形のピークを結んだ曲線が凸状になっている
請求項7から12のいずれか一項に記載の半導体装置。
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JP2017011704 | 2017-01-25 | ||
JP2017011704 | 2017-01-25 | ||
PCT/JP2017/042179 WO2018139027A1 (ja) | 2017-01-25 | 2017-11-24 | 半導体装置 |
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JP (1) | JP6631727B2 (ja) |
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JP7190256B2 (ja) | 2018-02-09 | 2022-12-15 | ローム株式会社 | 半導体装置 |
JP7085959B2 (ja) * | 2018-10-22 | 2022-06-17 | 三菱電機株式会社 | 半導体装置 |
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JPS63227063A (ja) * | 1987-03-17 | 1988-09-21 | Tdk Corp | 高耐圧半導体装置 |
JP3111827B2 (ja) * | 1994-09-20 | 2000-11-27 | 株式会社日立製作所 | 半導体装置及びそれを使った電力変換装置 |
JP3444081B2 (ja) * | 1996-02-28 | 2003-09-08 | 株式会社日立製作所 | ダイオード及び電力変換装置 |
JP5162804B2 (ja) | 2001-09-12 | 2013-03-13 | 富士電機株式会社 | 半導体装置 |
JP4269863B2 (ja) | 2003-09-25 | 2009-05-27 | 富士電機デバイステクノロジー株式会社 | 双方向高耐圧プレーナ型半導体装置 |
US7148540B2 (en) * | 2004-06-28 | 2006-12-12 | Agere Systems Inc. | Graded conductive structure for use in a metal-oxide-semiconductor device |
US8299494B2 (en) * | 2009-06-12 | 2012-10-30 | Alpha & Omega Semiconductor, Inc. | Nanotube semiconductor devices |
JP5218474B2 (ja) * | 2010-05-27 | 2013-06-26 | 富士電機株式会社 | 半導体装置 |
DE112012005981T5 (de) * | 2012-03-05 | 2015-04-09 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
JP6024751B2 (ja) * | 2012-07-18 | 2016-11-16 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE102014005879B4 (de) * | 2014-04-16 | 2021-12-16 | Infineon Technologies Ag | Vertikale Halbleitervorrichtung |
US9281360B1 (en) * | 2014-08-12 | 2016-03-08 | Infineon Technologies Ag | Semiconductor device with a shielding structure |
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JP6631727B2 (ja) | 2020-01-15 |
US10896961B2 (en) | 2021-01-19 |
CN109417086B (zh) | 2021-08-31 |
CN109417086A (zh) | 2019-03-01 |
US20190131412A1 (en) | 2019-05-02 |
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