JPWO2018003819A1 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02913—Measures for shielding against electromagnetic fields
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H—ELECTRICITY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
基板1と、弾性波素子5と、外装樹脂層13と、を備え、基板1は、一方主面に外部電極2が形成され、他方主面に第1実装電極3が形成され、弾性波素子5は、圧電基板6を備え、圧電基板6の一方主面に、送信用機能電極7および受信用機能電極8と、グランド端子9a、9bとが形成され、グランド端子9a、9bが第1実装電極3に接続されたものであって、圧電基板6の他方主面に、高熱伝導率導体層11a、11bが形成され、圧電基板6の両主面間を貫通して、導電ビア10a、10bが形成され、高熱伝導率導体層11a、11bと、グランド端子9a、9bとが、導電ビア10a、10bにより接続されたものとした。
Description
図1に、第1実施形態にかかる弾性波装置100を示す。
図5に、第2実施形態にかかる弾性波装置200を示す。ただし、図5は、弾性波装置200の断面図である。
図6に、第3実施形態にかかる弾性波装置300を示す。ただし、図6は、弾性波装置300の断面図である。
図7に、第4実施形態にかかる弾性波装置400を示す。ただし、図7は、弾性波装置400の断面図である。
図8に、第5実施形態にかかる弾性波装置500を示す。ただし、図8は、弾性波装置500の断面図である。
2・・・外部電極
3・・・第1実装電極(グランド用実装電極)
4・・・導電ビア(基板1に形成されたもの)
5・・・弾性波素子
6・・・圧電基板
7・・・送信用機能電極
8・・・受信用機能電極
9a、9b・・・グランド端子
10a、10b・・・導電ビア(圧電基板6に形成されたもの)
11a、11b、21a、21b、31a、31b、41・・・高熱伝導率導体層
12・・・バンプ
13、23・・・外装樹脂層
100、200、300、400、500・・・弾性波装置
Claims (7)
- 基板と、
前記基板の他方主面に実装された少なくとも1つの弾性波素子と、を備え、
前記基板は、一方主面に、外部電極が形成され、他方主面に、第1実装電極が形成され、
前記弾性波素子は、圧電基板を備え、前記圧電基板の一方主面に、グランド端子が形成され、
前記グランド端子が前記第1実装電極に接続された弾性波装置であって、
前記圧電基板の他方主面に、当該圧電基板よりも熱伝導率の大きい高熱伝導率導体層が形成され、
前記圧電基板の両主面間を貫通して、導電ビアが形成され、
前記高熱伝導率導体層と、前記グランド端子とが、前記導電ビアにより接続された弾性波装置。 - 前記弾性波素子の少なくとも1つが、1つの前記圧電基板に構成されたデュプレクサまたはマルチプレクサであり、
当該弾性波素子の一方主面に、機能電極として、送信用機能電極と、受信用機能電極とが形成された、請求項1に記載された弾性波装置。 - 前記高熱伝導率導体層が、前記圧電基板の他方主面の中に、前記送信用機能電極に対応した領域と、前記受信用機能電極に対応した領域とに分離した領域を含む、請求項2に記載された弾性波装置。
- 前記送信用機能電極に対応した領域に形成された前記高熱伝導率導体層と、前記送信用機能電極の近傍に形成された前記グランド端子とが、前記導電ビアにより接続された、請求項3に記載された弾性波装置。
- 前記受信用機能電極に対応した領域に形成された前記高熱伝導率導体層と、前記受信用機能電極の近傍に形成された前記グランド端子とが、前記導電ビアにより接続された、請求項3に記載された弾性波装置。
- 前記高熱伝導率導体層が、前記圧電基板の他方主面の、前記送信用機能電極に対応した領域と、前記送信用機能電極に対応した領域とを覆う、1つの連続した導体層として形成された、請求項2に記載された弾性波装置。
- 前記高熱伝導率導体層と、前記受信用機能電極の近傍に形成された前記グランド端子とが、前記導電ビアにより電気的に接続された、請求項6に記載された弾性波装置。
Applications Claiming Priority (3)
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JP2016129077 | 2016-06-29 | ||
JP2016129077 | 2016-06-29 | ||
PCT/JP2017/023651 WO2018003819A1 (ja) | 2016-06-29 | 2017-06-27 | 弾性波装置 |
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JPWO2018003819A1 true JPWO2018003819A1 (ja) | 2019-03-14 |
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JP2018525190A Pending JPWO2018003819A1 (ja) | 2016-06-29 | 2017-06-27 | 弾性波装置 |
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US (1) | US10862450B2 (ja) |
JP (1) | JPWO2018003819A1 (ja) |
CN (1) | CN109417375A (ja) |
WO (1) | WO2018003819A1 (ja) |
Families Citing this family (6)
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JP6414629B2 (ja) * | 2015-06-24 | 2018-10-31 | 株式会社村田製作所 | 弾性波フィルタ装置 |
JP6947220B2 (ja) * | 2017-09-05 | 2021-10-13 | 株式会社村田製作所 | フィルタ装置 |
DE102018108605A1 (de) * | 2018-04-11 | 2019-10-17 | RF360 Europe GmbH | SAW-Resonator mit verbesserter Leistungsbeständigkeit und Wärmeresistenz und SAW-Resonator umfassendes HF-Filter |
WO2020100899A1 (ja) * | 2018-11-14 | 2020-05-22 | 株式会社村田製作所 | 電子部品及びそれを備える電子部品モジュール |
US11581870B2 (en) * | 2019-09-27 | 2023-02-14 | Skyworks Solutions, Inc. | Stacked acoustic wave resonator package with laser-drilled VIAS |
WO2023085362A1 (ja) * | 2021-11-11 | 2023-05-19 | 株式会社村田製作所 | 弾性波装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001281478A (ja) * | 2000-03-28 | 2001-10-10 | Fujitsu Ltd | 光集積回路 |
JP2003087093A (ja) * | 2001-09-14 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 弾性表面波フィルタ |
JP2005094405A (ja) * | 2003-09-18 | 2005-04-07 | Tdk Corp | 弾性表面波フィルタを備えた高周波モジュール |
JP2005217670A (ja) * | 2004-01-28 | 2005-08-11 | Kyocera Corp | 弾性表面波装置および通信装置 |
JP2005223582A (ja) * | 2004-02-05 | 2005-08-18 | Renesas Technology Corp | 高周波回路モジュール |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6310422B1 (en) * | 1998-03-12 | 2001-10-30 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave filter |
JP3915649B2 (ja) | 2002-10-04 | 2007-05-16 | エプソントヨコム株式会社 | 表面実装型sawデバイスの製造方法 |
US7332986B2 (en) * | 2004-06-28 | 2008-02-19 | Kyocera Corporation | Surface acoustic wave apparatus and communications equipment |
JP2006120981A (ja) * | 2004-10-25 | 2006-05-11 | Alps Electric Co Ltd | 電子部品及びその製造方法 |
CN101401206B (zh) * | 2006-03-29 | 2011-04-13 | 京瓷株式会社 | 电路组件和无线通信设备、以及电路组件的制造方法 |
US8004370B2 (en) * | 2006-03-31 | 2011-08-23 | Kyocera Corporation | Surface acoustic wave element, surface acoustic wave apparatus, and communication apparatus |
JP4858985B2 (ja) | 2007-06-07 | 2012-01-18 | ラピスセミコンダクタ株式会社 | 弾性表面波フィルタパッケージ |
JP5686943B2 (ja) * | 2008-09-17 | 2015-03-18 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
JP6284811B2 (ja) | 2014-04-14 | 2018-02-28 | 太陽誘電株式会社 | 電子デバイス及びその製造方法 |
JP6508920B2 (ja) * | 2014-11-13 | 2019-05-08 | 太陽誘電株式会社 | 弾性波デバイスおよび送受信デバイス |
WO2016088681A1 (ja) * | 2014-12-04 | 2016-06-09 | 株式会社村田製作所 | 電子部品及びその製造方法 |
JP6414629B2 (ja) * | 2015-06-24 | 2018-10-31 | 株式会社村田製作所 | 弾性波フィルタ装置 |
CN105609904A (zh) * | 2015-12-29 | 2016-05-25 | 中国电子科技集团公司第二十六研究所 | 一种芯片级声表面波器件气密性封装及方法 |
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- 2017-06-27 CN CN201780040130.XA patent/CN109417375A/zh active Pending
- 2017-06-27 WO PCT/JP2017/023651 patent/WO2018003819A1/ja active Application Filing
- 2017-06-27 JP JP2018525190A patent/JPWO2018003819A1/ja active Pending
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- 2018-12-28 US US16/234,686 patent/US10862450B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001281478A (ja) * | 2000-03-28 | 2001-10-10 | Fujitsu Ltd | 光集積回路 |
JP2003087093A (ja) * | 2001-09-14 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 弾性表面波フィルタ |
JP2005094405A (ja) * | 2003-09-18 | 2005-04-07 | Tdk Corp | 弾性表面波フィルタを備えた高周波モジュール |
JP2005217670A (ja) * | 2004-01-28 | 2005-08-11 | Kyocera Corp | 弾性表面波装置および通信装置 |
JP2005223582A (ja) * | 2004-02-05 | 2005-08-18 | Renesas Technology Corp | 高周波回路モジュール |
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US10862450B2 (en) | 2020-12-08 |
CN109417375A (zh) | 2019-03-01 |
WO2018003819A1 (ja) | 2018-01-04 |
US20190140615A1 (en) | 2019-05-09 |
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