JPWO2017170738A1 - 吸着部材 - Google Patents
吸着部材 Download PDFInfo
- Publication number
- JPWO2017170738A1 JPWO2017170738A1 JP2018509363A JP2018509363A JPWO2017170738A1 JP WO2017170738 A1 JPWO2017170738 A1 JP WO2017170738A1 JP 2018509363 A JP2018509363 A JP 2018509363A JP 2018509363 A JP2018509363 A JP 2018509363A JP WO2017170738 A1 JPWO2017170738 A1 JP WO2017170738A1
- Authority
- JP
- Japan
- Prior art keywords
- member according
- top surface
- convex portion
- silicon carbide
- adsorbing member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
2 :凸部
3 :基部
4 :第1面
5 :頂面
6 :側面
6a:第1側面
6b:第2側面
7 :突条部
8 :凸部の第1面につながる位置の面積
9 :境界
10:吸着部材
11:基板(被吸着体)
20:レーザ光源
21:レーザ光
22:ステージ
Claims (17)
- 基部と複数の凸部とを備え、
前記基部は、第1面を有し、
前記凸部は、前記第1面につながる側面および該側面につながる頂面を有し、
前記側面は、前記第1面から離れる方向に伸びる突条部を複数備えることを特徴とする吸着部材。 - 前記突条部は、前記第1面につながっていることを特徴とする請求項1に記載の吸着部材。
- 前記凸部は、前記頂面の面積が、前記第1面につながる位置の面積よりも小さいことを特徴とする請求項1または請求項2に記載の吸着部材。
- 前記側面は、前記頂面から前記突条部までを第1側面、前記突条部が位置する部分を第2側面としたとき、
前記凸部の側面視において、
前記第1側面は、該第1側面と前記第2側面との境界における幅が最も広く、
前記第2側面は、該第2側面における幅が、前記境界における幅よりも広いことを特徴とする請求項3に記載の吸着部材。 - 前記第1側面は、前記第2側面とつながる部分に段差部を有することを特徴とする請求項4に記載の吸着部材。
- 前記凸部の側面視において、
前記第1側面の幅は、前記頂面に近づくにつれて漸減していることを特徴とする請求項4または5に記載の吸着部材。 - 前記凸部の側面視において、
第2側面の幅は、前記第1面に近づくにつれて漸増していることを特徴とする請求項4〜6のいずれかに記載の吸着部材。 - 前記第1側面の単位面積当たりの気孔の個数が、前記第2側面の単位面積当たりの気孔の個数よりも少ないことを特徴とする請求項4〜7のいずれかに記載の吸着部材。
- 前記第1面の粗さ曲線要素の平均高さが、前記頂面の粗さ曲線要素の平均高さの2倍以上であることを特徴とする請求項1〜8のいずれかに記載の吸着部材。
- 前記第1面の粗さ曲線要素の平均長さが、前記頂面の粗さ曲線要素の平均長さの2倍以上であることを特徴とする請求項1〜9のいずれかに記載の吸着部材。
- 前記頂面のスキューネスが前記第1面のスキューネスよりも小さく、かつ前記頂面のクルトシスが前記第1面のクルトシスよりも小さいことを特徴とする請求項1〜10のいずれかに記載の吸着部材。
- 前記頂面のスキューネスが0よりも小さく、前記第1面のスキューネスが0より大きいことを特徴とする請求項11に記載の吸着部材。
- 前記頂面のクルトシスが3よりも小さく、前記第1面のクルトシスが3より大きいことを特徴とする請求項11または12に記載の吸着部材。
- 前記基部および前記凸部は、セラミックスからなることを特徴とする請求項1〜13のいずれかに記載の吸着部材。
- 前記セラミックスにおける主成分が炭化珪素であることを特徴とする請求項14に記載の吸着部材。
- 前記炭化珪素の結晶の結晶多形のうち3C型および4H型の比率の合計が10%以上20%以下であることを特徴とする請求項15に記載の吸着部材。
- 前記セラミックスは、チタンを含み、チタンの含有量が160質量ppm以上400質量ppm以下であることを特徴とする請求項15または請求項16に記載の吸着部材。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016067850 | 2016-03-30 | ||
JP2016067850 | 2016-03-30 | ||
PCT/JP2017/013008 WO2017170738A1 (ja) | 2016-03-30 | 2017-03-29 | 吸着部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017170738A1 true JPWO2017170738A1 (ja) | 2019-01-10 |
JP6592188B2 JP6592188B2 (ja) | 2019-10-16 |
Family
ID=59965787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018509363A Active JP6592188B2 (ja) | 2016-03-30 | 2017-03-29 | 吸着部材 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11031278B2 (ja) |
EP (1) | EP3439027B1 (ja) |
JP (1) | JP6592188B2 (ja) |
KR (1) | KR102202904B1 (ja) |
CN (1) | CN108780775B (ja) |
WO (1) | WO2017170738A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6592188B2 (ja) * | 2016-03-30 | 2019-10-16 | 京セラ株式会社 | 吸着部材 |
JP6960260B2 (ja) * | 2017-06-27 | 2021-11-05 | 日本特殊陶業株式会社 | 基板保持装置及びその製造方法 |
JP6993813B2 (ja) * | 2017-08-24 | 2022-01-14 | 日本特殊陶業株式会社 | 基板保持装置 |
WO2020170514A1 (ja) * | 2019-02-20 | 2020-08-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2023157415A (ja) * | 2022-04-15 | 2023-10-26 | 日本特殊陶業株式会社 | 保持部材および静電チャック |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139169A (ja) * | 1994-11-11 | 1996-05-31 | Sumitomo Metal Ind Ltd | ウエハ保持台用セラミックス部材の作製方法 |
JPH10242255A (ja) * | 1997-02-28 | 1998-09-11 | Kyocera Corp | 真空吸着装置 |
JP2006173259A (ja) * | 2004-12-14 | 2006-06-29 | Ricoh Co Ltd | サセプター及びその製造方法及び半導体製造装置 |
JP2006182641A (ja) * | 2004-12-01 | 2006-07-13 | Kyocera Corp | 炭化珪素質焼結体及びその製造方法並びにそれを用いた半導体製造装置用部材 |
JP2008198843A (ja) * | 2007-02-14 | 2008-08-28 | Tokyo Electron Ltd | 基板載置台及びその表面処理方法 |
JP2010016176A (ja) * | 2008-07-03 | 2010-01-21 | Kyocera Corp | 試料保持具 |
JP2010147080A (ja) * | 2008-12-16 | 2010-07-01 | Shin Etsu Handotai Co Ltd | 気相成長用サセプタ及び気相成長装置並びにエピタキシャルウェーハの製造方法 |
JP2011082579A (ja) * | 2006-02-23 | 2011-04-21 | Kyocera Corp | 試料保持具 |
JP2013230948A (ja) * | 2012-04-27 | 2013-11-14 | Kyocera Corp | 炭化珪素質焼結体およびこの炭化珪素質焼結体からなる静電吸着部材ならびに半導体製造装置用部材 |
WO2014084060A1 (ja) * | 2012-11-28 | 2014-06-05 | 京セラ株式会社 | 載置用部材およびその製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4143441A (en) * | 1977-01-10 | 1979-03-13 | National Union Electric Corporation | Vacuum cleaner nozzle |
JPH1092738A (ja) | 1996-09-18 | 1998-04-10 | Canon Inc | 基板保持装置およびこれを用いた露光装置 |
JP4451578B2 (ja) * | 2001-08-27 | 2010-04-14 | 太平洋セメント株式会社 | 真空チャック |
US20050066471A1 (en) * | 2003-09-30 | 2005-03-31 | Miller Paul R. | Color-coded cleaning nozzles and method of cleaning |
US7532310B2 (en) * | 2004-10-22 | 2009-05-12 | Asml Netherlands B.V. | Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck |
KR101320106B1 (ko) * | 2006-12-29 | 2013-10-18 | 엘지디스플레이 주식회사 | 글래스 지지핀 및 이를 구비한 반송 정반 |
JP2009060011A (ja) * | 2007-09-03 | 2009-03-19 | Tokyo Electron Ltd | 基板載置台、基板処理装置、及び温度制御方法 |
JP5454803B2 (ja) * | 2010-08-11 | 2014-03-26 | Toto株式会社 | 静電チャック |
JP5597524B2 (ja) | 2010-11-29 | 2014-10-01 | 京セラ株式会社 | 載置用部材およびその製造方法 |
KR101286724B1 (ko) * | 2011-10-17 | 2013-07-18 | (주)제니스월드 | 분할 엠보싱 구조 정전척 |
JP6148084B2 (ja) * | 2013-06-26 | 2017-06-14 | 京セラ株式会社 | 吸着部材 |
JP6212412B2 (ja) * | 2014-02-28 | 2017-10-11 | 日本特殊陶業株式会社 | 真空吸着部材 |
JP6592188B2 (ja) * | 2016-03-30 | 2019-10-16 | 京セラ株式会社 | 吸着部材 |
-
2017
- 2017-03-29 JP JP2018509363A patent/JP6592188B2/ja active Active
- 2017-03-29 EP EP17775272.2A patent/EP3439027B1/en active Active
- 2017-03-29 CN CN201780019746.9A patent/CN108780775B/zh active Active
- 2017-03-29 US US16/089,697 patent/US11031278B2/en active Active
- 2017-03-29 WO PCT/JP2017/013008 patent/WO2017170738A1/ja active Application Filing
- 2017-03-29 KR KR1020187027604A patent/KR102202904B1/ko active IP Right Grant
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139169A (ja) * | 1994-11-11 | 1996-05-31 | Sumitomo Metal Ind Ltd | ウエハ保持台用セラミックス部材の作製方法 |
JPH10242255A (ja) * | 1997-02-28 | 1998-09-11 | Kyocera Corp | 真空吸着装置 |
JP2006182641A (ja) * | 2004-12-01 | 2006-07-13 | Kyocera Corp | 炭化珪素質焼結体及びその製造方法並びにそれを用いた半導体製造装置用部材 |
JP2006173259A (ja) * | 2004-12-14 | 2006-06-29 | Ricoh Co Ltd | サセプター及びその製造方法及び半導体製造装置 |
JP2011082579A (ja) * | 2006-02-23 | 2011-04-21 | Kyocera Corp | 試料保持具 |
JP2008198843A (ja) * | 2007-02-14 | 2008-08-28 | Tokyo Electron Ltd | 基板載置台及びその表面処理方法 |
JP2010016176A (ja) * | 2008-07-03 | 2010-01-21 | Kyocera Corp | 試料保持具 |
JP2010147080A (ja) * | 2008-12-16 | 2010-07-01 | Shin Etsu Handotai Co Ltd | 気相成長用サセプタ及び気相成長装置並びにエピタキシャルウェーハの製造方法 |
JP2013230948A (ja) * | 2012-04-27 | 2013-11-14 | Kyocera Corp | 炭化珪素質焼結体およびこの炭化珪素質焼結体からなる静電吸着部材ならびに半導体製造装置用部材 |
WO2014084060A1 (ja) * | 2012-11-28 | 2014-06-05 | 京セラ株式会社 | 載置用部材およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6592188B2 (ja) | 2019-10-16 |
KR20180118705A (ko) | 2018-10-31 |
US11031278B2 (en) | 2021-06-08 |
CN108780775B (zh) | 2023-04-07 |
US20190115244A1 (en) | 2019-04-18 |
EP3439027B1 (en) | 2022-12-07 |
EP3439027A4 (en) | 2019-11-27 |
CN108780775A (zh) | 2018-11-09 |
WO2017170738A1 (ja) | 2017-10-05 |
KR102202904B1 (ko) | 2021-01-14 |
EP3439027A1 (en) | 2019-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6592188B2 (ja) | 吸着部材 | |
JP2010016176A (ja) | 試料保持具 | |
US8971010B2 (en) | Electrostatic chuck and method of manufacturing electrostatic chuck | |
JP5597524B2 (ja) | 載置用部材およびその製造方法 | |
JP5697813B1 (ja) | 半導体用複合基板のハンドル基板 | |
JP6085152B2 (ja) | 真空チャック | |
JP2018517282A (ja) | ダイヤモンドのみの接触面を有する物品 | |
JP5872956B2 (ja) | 炭化珪素質焼結体およびこの炭化珪素質焼結体からなる静電吸着部材ならびに半導体製造装置用部材 | |
JP4722006B2 (ja) | 試料保持具 | |
JP6017895B2 (ja) | アルミナ質焼結体の製造方法、真空チャックの製造方法、及び静電チャックの製造方法 | |
JP2007299867A (ja) | 静電チャック及びその製造方法 | |
JP5751917B2 (ja) | 炭化珪素質焼結体およびこの炭化珪素質焼結体からなる静電吸着部材ならびに半導体製造装置用部材 | |
US11934096B2 (en) | Frame member for electron beam lithography device and electron beam lithography device | |
KR102283075B1 (ko) | SiC 부재 및 이것으로 이루어지는 기판 유지 부재 그리고 이들의 제조 방법 | |
JP7514947B2 (ja) | クランプ用治具および洗浄装置 | |
JP2019191488A (ja) | ペリクル枠及びその製造方法 | |
JP2018200380A (ja) | ペリクル枠及びその製造方法 | |
JP6024239B2 (ja) | 半導体装置の製造方法 | |
KR20240110885A (ko) | 클램프용 지그 및 세정 장치 | |
JP6386935B2 (ja) | 炭化珪素質部材 | |
KR20230063892A (ko) | 클램프용 지그, 클램프용 지그의 제조 방법, 및 세정 장치 | |
JP2018194742A (ja) | ペリクル枠 | |
JP2018194744A (ja) | ペリクル枠及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180905 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190514 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190710 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190820 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190919 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6592188 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |