JPWO2017057277A1 - 撮像素子および撮像装置 - Google Patents

撮像素子および撮像装置 Download PDF

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Publication number
JPWO2017057277A1
JPWO2017057277A1 JP2017543259A JP2017543259A JPWO2017057277A1 JP WO2017057277 A1 JPWO2017057277 A1 JP WO2017057277A1 JP 2017543259 A JP2017543259 A JP 2017543259A JP 2017543259 A JP2017543259 A JP 2017543259A JP WO2017057277 A1 JPWO2017057277 A1 JP WO2017057277A1
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Japan
Prior art keywords
light
imaging device
region
unit
solid
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JP2017543259A
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English (en)
Japanese (ja)
Inventor
石田　知久
知久 石田
佳之 渡邉
佳之 渡邉
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Nikon Corp
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Nikon Corp
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Publication of JPWO2017057277A1 publication Critical patent/JPWO2017057277A1/ja
Priority to JP2020195228A priority Critical patent/JP7383597B2/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
JP2017543259A 2015-09-30 2016-09-26 撮像素子および撮像装置 Pending JPWO2017057277A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2020195228A JP7383597B2 (ja) 2015-09-30 2020-11-25 撮像素子および撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015195347 2015-09-30
JP2015195347 2015-09-30
PCT/JP2016/078278 WO2017057277A1 (ja) 2015-09-30 2016-09-26 撮像素子および撮像装置

Related Child Applications (1)

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JP2020195228A Division JP7383597B2 (ja) 2015-09-30 2020-11-25 撮像素子および撮像装置

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JPWO2017057277A1 true JPWO2017057277A1 (ja) 2018-07-26

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JP2020195228A Active JP7383597B2 (ja) 2015-09-30 2020-11-25 撮像素子および撮像装置
JP2022183147A Pending JP2023017991A (ja) 2015-09-30 2022-11-16 撮像素子

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Country Status (6)

Country Link
US (2) US20180294300A1 (https=)
EP (1) EP3358620B1 (https=)
JP (3) JPWO2017057277A1 (https=)
KR (4) KR102488709B1 (https=)
CN (2) CN115295569A (https=)
WO (1) WO2017057277A1 (https=)

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US11134209B2 (en) * 2016-01-22 2021-09-28 Sony Corporation Light receiving device, control method, and electronic apparatus
JP6700811B2 (ja) * 2016-01-26 2020-05-27 キヤノン株式会社 半導体装置および半導体装置の製造方法
JP2018060980A (ja) * 2016-10-07 2018-04-12 キヤノン株式会社 撮像表示装置及びウェアラブルデバイス
KR20260016606A (ko) * 2018-02-01 2026-02-03 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 그 제조 방법, 및 전자 기기
CN109033913A (zh) * 2018-07-25 2018-12-18 维沃移动通信有限公司 一种识别码的识别方法及移动终端
JP7527204B2 (ja) * 2018-09-11 2024-08-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
KR102742350B1 (ko) * 2018-11-21 2024-12-16 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
TWI900270B (zh) * 2019-06-26 2025-10-01 日商索尼半導體解決方案公司 光偵測裝置
CN112018140A (zh) * 2020-08-14 2020-12-01 清华大学 基于随机形状单元的微型光谱芯片
JP2022086611A (ja) * 2020-11-30 2022-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法
KR102913462B1 (ko) 2021-04-19 2026-01-15 삼성전자주식회사 이미지 센서
US12520606B2 (en) 2022-08-02 2026-01-06 Samsung Electronics Co., Ltd. Image sensor
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Also Published As

Publication number Publication date
EP3358620A1 (en) 2018-08-08
US20180294300A1 (en) 2018-10-11
CN115295569A (zh) 2022-11-04
EP3358620B1 (en) 2025-08-20
US20220085220A1 (en) 2022-03-17
EP3358620A4 (en) 2019-04-24
CN108174619B (zh) 2022-09-20
WO2017057277A1 (ja) 2017-04-06
KR20200145850A (ko) 2020-12-30
CN108174619A (zh) 2018-06-15
JP2021044572A (ja) 2021-03-18
KR20230009533A (ko) 2023-01-17
KR102488709B1 (ko) 2023-01-13
JP2023017991A (ja) 2023-02-07
KR20180048900A (ko) 2018-05-10
KR102623653B1 (ko) 2024-01-10
KR20240010528A (ko) 2024-01-23
JP7383597B2 (ja) 2023-11-20

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