KR102488709B1 - 촬상 소자 및 촬상 장치 - Google Patents

촬상 소자 및 촬상 장치 Download PDF

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KR102488709B1
KR102488709B1 KR1020207036799A KR20207036799A KR102488709B1 KR 102488709 B1 KR102488709 B1 KR 102488709B1 KR 1020207036799 A KR1020207036799 A KR 1020207036799A KR 20207036799 A KR20207036799 A KR 20207036799A KR 102488709 B1 KR102488709 B1 KR 102488709B1
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light
photoelectric conversion
region
microlens
holding
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KR20200145850A (ko
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도모히사 이시다
요시유키 와타나베
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가부시키가이샤 니콘
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H01L27/14627—
    • H01L27/14623—
    • H01L27/14665—
    • H01L31/0232—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
KR1020207036799A 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치 Active KR102488709B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237001097A KR102623653B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2015-195347 2015-09-30
JP2015195347 2015-09-30
PCT/JP2016/078278 WO2017057277A1 (ja) 2015-09-30 2016-09-26 撮像素子および撮像装置
KR1020187009049A KR20180048900A (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치

Related Parent Applications (1)

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KR20200145850A KR20200145850A (ko) 2020-12-30
KR102488709B1 true KR102488709B1 (ko) 2023-01-13

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KR1020247000327A Ceased KR20240010528A (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치
KR1020187009049A Ceased KR20180048900A (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치
KR1020237001097A Active KR102623653B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치

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KR1020187009049A Ceased KR20180048900A (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치
KR1020237001097A Active KR102623653B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치

Country Status (6)

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US (2) US20180294300A1 (https=)
EP (1) EP3358620B1 (https=)
JP (3) JPWO2017057277A1 (https=)
KR (4) KR102488709B1 (https=)
CN (2) CN115295569A (https=)
WO (1) WO2017057277A1 (https=)

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CN109033913A (zh) * 2018-07-25 2018-12-18 维沃移动通信有限公司 一种识别码的识别方法及移动终端
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KR102742350B1 (ko) * 2018-11-21 2024-12-16 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
TWI900270B (zh) * 2019-06-26 2025-10-01 日商索尼半導體解決方案公司 光偵測裝置
CN112018140A (zh) * 2020-08-14 2020-12-01 清华大学 基于随机形状单元的微型光谱芯片
JP2022086611A (ja) * 2020-11-30 2022-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法
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Publication number Publication date
EP3358620A1 (en) 2018-08-08
US20180294300A1 (en) 2018-10-11
JPWO2017057277A1 (ja) 2018-07-26
CN115295569A (zh) 2022-11-04
EP3358620B1 (en) 2025-08-20
US20220085220A1 (en) 2022-03-17
EP3358620A4 (en) 2019-04-24
CN108174619B (zh) 2022-09-20
WO2017057277A1 (ja) 2017-04-06
KR20200145850A (ko) 2020-12-30
CN108174619A (zh) 2018-06-15
JP2021044572A (ja) 2021-03-18
KR20230009533A (ko) 2023-01-17
JP2023017991A (ja) 2023-02-07
KR20180048900A (ko) 2018-05-10
KR102623653B1 (ko) 2024-01-10
KR20240010528A (ko) 2024-01-23
JP7383597B2 (ja) 2023-11-20

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