CN115295569A - 摄像元件及摄像装置 - Google Patents

摄像元件及摄像装置 Download PDF

Info

Publication number
CN115295569A
CN115295569A CN202211045472.XA CN202211045472A CN115295569A CN 115295569 A CN115295569 A CN 115295569A CN 202211045472 A CN202211045472 A CN 202211045472A CN 115295569 A CN115295569 A CN 115295569A
Authority
CN
China
Prior art keywords
light
photoelectric conversion
region
image pickup
microlens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211045472.XA
Other languages
English (en)
Chinese (zh)
Inventor
石田知久
渡边佳之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN115295569A publication Critical patent/CN115295569A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
CN202211045472.XA 2015-09-30 2016-09-26 摄像元件及摄像装置 Pending CN115295569A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015-195347 2015-09-30
JP2015195347 2015-09-30
PCT/JP2016/078278 WO2017057277A1 (ja) 2015-09-30 2016-09-26 撮像素子および撮像装置
CN201680057084.XA CN108174619B (zh) 2015-09-30 2016-09-26 摄像元件及摄像装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680057084.XA Division CN108174619B (zh) 2015-09-30 2016-09-26 摄像元件及摄像装置

Publications (1)

Publication Number Publication Date
CN115295569A true CN115295569A (zh) 2022-11-04

Family

ID=58427557

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202211045472.XA Pending CN115295569A (zh) 2015-09-30 2016-09-26 摄像元件及摄像装置
CN201680057084.XA Active CN108174619B (zh) 2015-09-30 2016-09-26 摄像元件及摄像装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201680057084.XA Active CN108174619B (zh) 2015-09-30 2016-09-26 摄像元件及摄像装置

Country Status (6)

Country Link
US (2) US20180294300A1 (https=)
EP (1) EP3358620B1 (https=)
JP (3) JPWO2017057277A1 (https=)
KR (4) KR102488709B1 (https=)
CN (2) CN115295569A (https=)
WO (1) WO2017057277A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11134209B2 (en) * 2016-01-22 2021-09-28 Sony Corporation Light receiving device, control method, and electronic apparatus
JP6700811B2 (ja) * 2016-01-26 2020-05-27 キヤノン株式会社 半導体装置および半導体装置の製造方法
JP2018060980A (ja) * 2016-10-07 2018-04-12 キヤノン株式会社 撮像表示装置及びウェアラブルデバイス
KR20260016606A (ko) * 2018-02-01 2026-02-03 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 그 제조 방법, 및 전자 기기
CN109033913A (zh) * 2018-07-25 2018-12-18 维沃移动通信有限公司 一种识别码的识别方法及移动终端
JP7527204B2 (ja) * 2018-09-11 2024-08-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
KR102742350B1 (ko) * 2018-11-21 2024-12-16 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
TWI900270B (zh) * 2019-06-26 2025-10-01 日商索尼半導體解決方案公司 光偵測裝置
CN112018140A (zh) * 2020-08-14 2020-12-01 清华大学 基于随机形状单元的微型光谱芯片
JP2022086611A (ja) * 2020-11-30 2022-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法
KR102913462B1 (ko) 2021-04-19 2026-01-15 삼성전자주식회사 이미지 센서
US12520606B2 (en) 2022-08-02 2026-01-06 Samsung Electronics Co., Ltd. Image sensor
CN120092510A (zh) * 2022-11-30 2025-06-03 索尼半导体解决方案公司 光学检测装置和电子设备

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3799304A (en) 1972-10-30 1974-03-26 Twin Disc Inc Hydraulic control system for power transmission having a modulated friction clutch
JPS5547260U (https=) 1978-09-26 1980-03-27
JP2004304105A (ja) * 2003-04-01 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP4341421B2 (ja) * 2004-02-04 2009-10-07 ソニー株式会社 固体撮像装置
JP2005303081A (ja) * 2004-04-13 2005-10-27 Matsushita Electric Ind Co Ltd 光センサーおよび固体撮像装置
JP2006344754A (ja) * 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2007201047A (ja) * 2006-01-25 2007-08-09 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2008060195A (ja) * 2006-08-30 2008-03-13 Nikon Corp 固体撮像装置およびその製造方法
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
JP4649390B2 (ja) * 2006-09-20 2011-03-09 富士フイルム株式会社 裏面照射型撮像素子の製造方法
JP5568880B2 (ja) * 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP4798232B2 (ja) * 2009-02-10 2011-10-19 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP4816768B2 (ja) 2009-06-22 2011-11-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US9543356B2 (en) * 2009-03-10 2017-01-10 Globalfoundries Inc. Pixel sensor cell including light shield
JP5513623B2 (ja) * 2010-08-24 2014-06-04 富士フイルム株式会社 固体撮像装置
JP2012156310A (ja) * 2011-01-26 2012-08-16 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP5810551B2 (ja) * 2011-02-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5794068B2 (ja) * 2011-09-16 2015-10-14 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2013098446A (ja) 2011-11-04 2013-05-20 Sony Corp 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
TW201334169A (zh) * 2012-02-10 2013-08-16 Sony Corp 攝像元件、製造裝置及方法、及攝像裝置
JP6065448B2 (ja) * 2012-08-03 2017-01-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5547260B2 (ja) 2012-10-22 2014-07-09 株式会社東芝 固体撮像装置
JP2014096490A (ja) * 2012-11-09 2014-05-22 Sony Corp 撮像素子、製造方法
US8773562B1 (en) * 2013-01-31 2014-07-08 Apple Inc. Vertically stacked image sensor
JP2015012126A (ja) * 2013-06-28 2015-01-19 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
US9356061B2 (en) * 2013-08-05 2016-05-31 Apple Inc. Image sensor with buried light shield and vertical gate
US9305952B2 (en) * 2013-08-27 2016-04-05 Semiconductor Components Industries, Llc Image sensors with inter-pixel light blocking structures
JP2015065270A (ja) * 2013-09-25 2015-04-09 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2015095468A (ja) * 2013-11-08 2015-05-18 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
JP6196911B2 (ja) * 2014-02-05 2017-09-13 オリンパス株式会社 固体撮像装置および撮像装置
KR102154184B1 (ko) * 2014-03-10 2020-09-09 삼성전자 주식회사 이미지 센서 및 이를 제조하는 방법
KR102363433B1 (ko) * 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서
CN108040502A (zh) * 2015-09-30 2018-05-15 株式会社尼康 摄像元件及摄像装置

Also Published As

Publication number Publication date
EP3358620A1 (en) 2018-08-08
US20180294300A1 (en) 2018-10-11
JPWO2017057277A1 (ja) 2018-07-26
EP3358620B1 (en) 2025-08-20
US20220085220A1 (en) 2022-03-17
EP3358620A4 (en) 2019-04-24
CN108174619B (zh) 2022-09-20
WO2017057277A1 (ja) 2017-04-06
KR20200145850A (ko) 2020-12-30
CN108174619A (zh) 2018-06-15
JP2021044572A (ja) 2021-03-18
KR20230009533A (ko) 2023-01-17
KR102488709B1 (ko) 2023-01-13
JP2023017991A (ja) 2023-02-07
KR20180048900A (ko) 2018-05-10
KR102623653B1 (ko) 2024-01-10
KR20240010528A (ko) 2024-01-23
JP7383597B2 (ja) 2023-11-20

Similar Documents

Publication Publication Date Title
JP7383597B2 (ja) 撮像素子および撮像装置
US8835981B2 (en) Solid-state image sensor
KR20240010546A (ko) 광 검출 장치 및 전자 기기
KR101819415B1 (ko) 고체 촬상 장치 및 전자 기기
JP4751865B2 (ja) 裏面照射型固体撮像素子及びその製造方法
CN111435667A (zh) 图像传感器
KR102225297B1 (ko) 촬상 소자 및 촬상 장치
KR20110011542A (ko) 고체 촬상 장치와 그 제조 방법, 및 전자기기
US12249615B2 (en) Image sensor with a device isolation structure enclosing a plurality of pixels including an opening in plan view
CN108140654A (zh) 摄像元件及摄像装置
JP7624825B2 (ja) 固体撮像装置
CN107833896A (zh) 固体摄像装置和电子设备
CN121844730A (zh) 光电检测装置和电子设备

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20221104