JPWO2016208407A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2016208407A1 JPWO2016208407A1 JP2017525184A JP2017525184A JPWO2016208407A1 JP WO2016208407 A1 JPWO2016208407 A1 JP WO2016208407A1 JP 2017525184 A JP2017525184 A JP 2017525184A JP 2017525184 A JP2017525184 A JP 2017525184A JP WO2016208407 A1 JPWO2016208407 A1 JP WO2016208407A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 230000005291 magnetic effect Effects 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 2
- 102100035420 DnaJ homolog subfamily C member 1 Human genes 0.000 abstract description 87
- 101000804122 Homo sapiens DnaJ homolog subfamily C member 1 Proteins 0.000 abstract description 87
- 238000005265 energy consumption Methods 0.000 abstract description 10
- HCUOEKSZWPGJIM-YBRHCDHNSA-N (e,2e)-2-hydroxyimino-6-methoxy-4-methyl-5-nitrohex-3-enamide Chemical compound COCC([N+]([O-])=O)\C(C)=C\C(=N/O)\C(N)=O HCUOEKSZWPGJIM-YBRHCDHNSA-N 0.000 description 16
- 101001109689 Homo sapiens Nuclear receptor subfamily 4 group A member 3 Proteins 0.000 description 16
- 101000598778 Homo sapiens Protein OSCP1 Proteins 0.000 description 16
- 101001067395 Mus musculus Phospholipid scramblase 1 Proteins 0.000 description 16
- 102100022673 Nuclear receptor subfamily 4 group A member 3 Human genes 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 230000005389 magnetism Effects 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/54—Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Logic Circuits (AREA)
Abstract
Description
まず、本実施形態の半導体集積回路の構成について説明する。図1は、本実施形態の半導体集積回路10の一例を示すブロック図である。
[第2の実施形態]
本実施形態の不揮発性フリップフロップ回路16は、NMOSトランジスタN1〜N6、NEOR回路NEOR1、及びNOR回路NOR1の配置が第1の実施形態の不揮発性フリップフロップ回路16と異なっている。なお、不揮発性フリップフロップ回路16のその他の構成や半導体集積回路10全体の構成は、第1の実施形態と同様のため、同様の部分については説明を省略する。
[第3の実施形態]
本実施形態では、上記各実施形態の不揮発性フリップフロップ回路16で用いていたNMOSトランジスタN1〜N7に代わりPMOSトランジスタを用いる場合について説明する。なお、上記各実施形態の不揮発性フリップフロップ回路16及び半導体集積回路10と同様の構成及び動作については説明を省略する。
[第4の実施形態]
本実施形態の不揮発性フリップフロップ回路116は、PMOSトランジスタP1〜P6の配置、及び書込制御回路134の論理回路が第3の実施形態の不揮発性フリップフロップ回路116と異なっている。不揮発性フリップフロップ回路116のその他の構成や半導体集積回路110全体の構成は、上記各実施形態と同様のため、同様の部分については説明を省略する。
14、114 パワースイッチ
16、116 不揮発性フリップフロップ回路
30 マスターラッチ
32 スレーブラッチ
34、134 書込制御回路
MJ1、MJ2 MTJ素子
N1〜N7、N10 NMOSトランジスタ
P1〜P7、P10 PMOSトランジスタ
Claims (6)
- フリップフロップと、
前記フリップフロップが保持するデータを記憶する不揮発性記憶部と、
自装置に対する電源電圧またはグランド電圧の供給が遮断される場合に、前記不揮発性記憶部に記憶されているデータと前記フリップフロップが保持するデータとが同一でない場合は、前記フリップフロップが保持するデータを前記不揮発性記憶部に書き込ませる制御を行い、前記不揮発性記憶部に記憶されているデータと前記フリップフロップに保持されているデータとが同一の場合は、前記フリップフロップが保持するデータを前記不揮発性記憶部に書き込ませない制御を行う書込制御部と、
を備えた半導体装置。 - 前記書込制御部は、前記不揮発性記憶部に記憶されているデータを記憶し、記憶している当該データと、前記フリップフロップが保持するデータとを比較した比較結果に基づいて前記制御を行う、
請求項1に記載の半導体装置。 - 前記フリップフロップと前記不揮発性記憶部との間の接続及び切断を切り替える第1スイッチ素子をさらに備え、
前記書込制御部は、前記書き込ませる制御を行う場合は、前記第1スイッチ素子により前記フリップフロップと前記不揮発性記憶部との間を接続させ、前記書き込ませない制御を行う場合は、前記第1スイッチ素子により前記フリップフロップと前記不揮発性記憶部との間を切断させる制御を行う、
請求項1または請求項2に記載の半導体装置。 - 自装置に対する電源電圧またはグランド電圧の供給が遮断された後に当該供給が再開された場合は、前記不揮発性記憶部に書き込まれたデータを復元させるために外部から入力される復元制御信号に応じて、前記不揮発性記憶部に書き込まれたデータを復元する復元部をさらに備えた、
請求項1から請求項3のいずれか1項に記載の半導体装置。 - 前記復元部は、前記復元制御信号に応じて前記フリップフロップと前記不揮発性記憶部との間の接続及び切断を切り替える第2スイッチ素子を備えた、
請求項4に記載の半導体装置。 - 前記不揮発性記憶部は、磁気トンネル接合素子である、
請求項1から請求項5のいずれか1項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015126834 | 2015-06-24 | ||
JP2015126834 | 2015-06-24 | ||
PCT/JP2016/067196 WO2016208407A1 (ja) | 2015-06-24 | 2016-06-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016208407A1 true JPWO2016208407A1 (ja) | 2018-04-12 |
JP6801654B2 JP6801654B2 (ja) | 2020-12-16 |
Family
ID=57585043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017525184A Expired - Fee Related JP6801654B2 (ja) | 2015-06-24 | 2016-06-09 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10373677B2 (ja) |
JP (1) | JP6801654B2 (ja) |
KR (1) | KR102555644B1 (ja) |
CN (1) | CN107683506B (ja) |
DE (1) | DE112016002871T5 (ja) |
WO (1) | WO2016208407A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7007173B2 (ja) * | 2016-12-16 | 2022-01-24 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
JP6931921B2 (ja) * | 2017-09-08 | 2021-09-08 | 学校法人 芝浦工業大学 | 半導体装置 |
JP7430407B2 (ja) * | 2019-05-30 | 2024-02-13 | 国立研究開発法人科学技術振興機構 | 電子回路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003016777A (ja) * | 2001-06-28 | 2003-01-17 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
JP4737886B2 (ja) * | 2001-08-09 | 2011-08-03 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP2004063004A (ja) | 2002-07-29 | 2004-02-26 | Sony Corp | 複合記憶回路構造及び同複合記憶回路構造を有する半導体装置 |
JP4283011B2 (ja) * | 2003-03-13 | 2009-06-24 | Tdk株式会社 | 磁気メモリデバイスおよびその読出方法 |
CN101821810B (zh) * | 2007-08-31 | 2013-05-01 | 国立大学法人东京工业大学 | 利用电流感应磁化反转mtj的非易失性sram/锁存电路 |
EP3107105B1 (en) | 2012-05-18 | 2021-06-16 | Japan Science and Technology Agency | Memory circuit |
JP6396671B2 (ja) | 2013-04-26 | 2018-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6232821B2 (ja) | 2013-08-07 | 2017-11-22 | 凸版印刷株式会社 | 不揮発性フリップフロップ、不揮発性ラッチおよび不揮発性メモリ素子 |
EP3828889B1 (en) * | 2014-08-12 | 2023-10-04 | Japan Science and Technology Agency | Memory circuit |
-
2016
- 2016-06-09 CN CN201680034994.6A patent/CN107683506B/zh active Active
- 2016-06-09 WO PCT/JP2016/067196 patent/WO2016208407A1/ja active Application Filing
- 2016-06-09 KR KR1020177035889A patent/KR102555644B1/ko active IP Right Grant
- 2016-06-09 DE DE112016002871.7T patent/DE112016002871T5/de active Pending
- 2016-06-09 US US15/737,374 patent/US10373677B2/en active Active
- 2016-06-09 JP JP2017525184A patent/JP6801654B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20180197600A1 (en) | 2018-07-12 |
WO2016208407A1 (ja) | 2016-12-29 |
CN107683506B (zh) | 2021-08-13 |
KR102555644B1 (ko) | 2023-07-18 |
DE112016002871T5 (de) | 2018-03-15 |
KR20180020975A (ko) | 2018-02-28 |
US10373677B2 (en) | 2019-08-06 |
JP6801654B2 (ja) | 2020-12-16 |
CN107683506A (zh) | 2018-02-09 |
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