JPWO2016163237A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000011347 resin Substances 0.000 claims abstract description 124
- 229920005989 resin Polymers 0.000 claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000003566 sealing material Substances 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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Abstract
Description
樹脂ケース15の制御端子140用の開口17に、この制御端子140の凹部140cに嵌まり合う凸形状の段差部を有する樹脂ブロック18が挿入されている。凹部140cは、樹脂ブロック18の先端部と嵌合される。これにより制御端子140は、水平な方向に精度よく位置決めされ、また、外部からの荷重による上下方向の移動が抑制される。
図1は、本発明の半導体装置の一実施形態であるパワー半導体モジュール10の説明図である。図1中、図1(a)はパワー半導体モジュール10の平面図であり、図1(b)は図1(a)のB−B線視の断面図である。パワー半導体モジュール10は、放熱ベース11、積層基板12、主端子13、制御端子14及び樹脂ケース15を備えている。
また、制御端子14の第1突起部14a及び第2突起部14bの間の凹部14cに樹脂ブロック18の両側面の凸状の段差部18cが嵌合されることにより、制御端子14は、図面の矢印A方向と矢印D方向(図4(b))の位置が固定される。すなわち、樹脂ケース15の長さ方向および樹脂ブロック18を挿入する方向に直交する樹脂ケース15の高さ方向それぞれの位置が固定される。このようにして制御端子14は高精度に位置決めされ固定される。
低剛性部14jは、図5(a)に示されるように交互に切り欠きを備えるジグザグ形状であり、直立部14dの平板面14iを例えば切り欠き加工によって略ジグザグ形状に部分的に形成してなる。
図9は従来の制御端子140の形状の一例を示す。下端が積層基板12に接合され、上端が樹脂ケースの開口を貫通させた制御端子140を樹脂ブロック18により押圧して固定すると、制御端子140の直立部分は根本で変形して傾きが生じ、制御端子140先端の位置精度を低下させることがあった。
図9に示した従来の制御端子140において先端位置精度の低下を招く直立部の傾きは、制御端子140を積層基板12に接合する位置のバラツキや、樹脂ケース15と制御端子140との部品公差及びクリアランス等が要因となる。また、制御端子140の直立部や連結部の長さが長いほど、直立部の剛性が高いほど、直立部の傾きは大きくなり易い。
図3に示した樹脂ブロック18は、両側面18bにそれぞれ段差部18cを有し、2本の制御端子14を嵌合させ固定できる。図7に、積層基板12に接合された主端子13及び制御端子14の平面図(図7(a))及び側面図(図7(b))を示す。1個の樹脂ブロック18により固定される2個で一組の制御端子14P1及び14P2は、積層基板12上の異なる回路板に互いに非接触で接合するために、互いに直立部14d及び連結部14eの長さが異なっている。制御端子14P1及び14P2は、例えば一方がゲート用であり他方がソースセンス用である。制御端子14P1及び14P2が直立部14d及び連結部14eの長さが異なっていても、低剛性部14jは樹脂ブロック18により押圧したときに同じ程度に変形するように調整することにより、高い位置精度を得ることができる。
12 積層基板
13 主端子
14 制御端子
14a 第1突起部
14b 第2突起部
14c 凹部
14j 低剛性部
15 樹脂ケース
18 樹脂ブロック
Claims (5)
- 回路板を有する積層基板と、
一方の端部及び他方の端部を有し、前記積層基板の回路板に前記一方の端部が固定された制御端子と、
開口部を有し、前記積層基板を覆って配置され、前記開口部から前記他方の端部が外方に延出する樹脂ケースと、
前記樹脂ケースの開口部に挿入され、前記開口部の側壁に向けて前記制御端子を押圧し固定している樹脂ブロックと、
を備え、
前記制御端子が、前記樹脂ケースの開口部で樹脂ブロックと接触する位置よりも樹脂ケース内側の位置に、低剛性部を備える半導体装置。 - 前記制御端子が、第1突起部と、第2突起部と、前記第1突起部及び第2突起部の間の凹部を備え、前記凹部が、前記樹脂ブロックと嵌合する請求項1記載の半導体装置。
- 前記制御端子の低剛性部が、前記樹脂ケース内に注入される封止材よりも前記樹脂ケースの開口部寄りに位置する請求項1記載の半導体装置。
- 前記制御端子の低剛性部が、略ジグザグ形状である請求項1記載の半導体装置。
- 前記樹脂ブロックが、2個一組の制御端子を固定し、前記2個一組の制御端子は、形状が異なり、かつ低剛性部におけるたわみ易さが形状の相違に応じて異なり、前記樹脂ブロックによる押圧力で各制御端子の低剛性部が同じ程度に変形し得る請求項1記載の半導体装置。
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JP2015081207 | 2015-04-10 | ||
JP2015081207 | 2015-04-10 | ||
PCT/JP2016/059201 WO2016163237A1 (ja) | 2015-04-10 | 2016-03-23 | 半導体装置 |
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JP6365768B2 JP6365768B2 (ja) | 2018-08-01 |
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JP6783327B2 (ja) * | 2017-01-17 | 2020-11-11 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP6753364B2 (ja) * | 2017-06-21 | 2020-09-09 | 三菱電機株式会社 | 半導体装置 |
DE112018006776T5 (de) * | 2018-01-05 | 2020-09-17 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
JP7275493B2 (ja) | 2018-08-07 | 2023-05-18 | 富士電機株式会社 | 半導体装置 |
AT522633B1 (de) * | 2019-05-29 | 2021-07-15 | Melecs Ews Gmbh | Kontaktstift, Trägerplatte und elektrische Maschine |
US20240170868A1 (en) * | 2022-11-17 | 2024-05-23 | Infineon Technologies Ag | Electrical Connector with Meander and Opening |
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CN103035595B (zh) * | 2013-01-04 | 2016-03-23 | 江苏宏微科技股份有限公司 | 功率模块端子及其连接结构 |
JP6057016B2 (ja) * | 2014-03-19 | 2017-01-11 | 富士電機株式会社 | 半導体装置及びその製造方法 |
DE112015001002B4 (de) * | 2014-10-14 | 2023-08-10 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
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- 2016-03-23 WO PCT/JP2016/059201 patent/WO2016163237A1/ja active Application Filing
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JP2001144249A (ja) * | 1999-11-15 | 2001-05-25 | Nippon Inter Electronics Corp | 複合半導体装置 |
JP2009010252A (ja) * | 2007-06-29 | 2009-01-15 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
WO2013027826A1 (ja) * | 2011-08-25 | 2013-02-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2013239512A (ja) * | 2012-05-14 | 2013-11-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2014107378A (ja) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | 電力用半導体装置 |
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JP6365768B2 (ja) | 2018-08-01 |
US20170200704A1 (en) | 2017-07-13 |
US9941254B2 (en) | 2018-04-10 |
CN106796934A (zh) | 2017-05-31 |
WO2016163237A1 (ja) | 2016-10-13 |
CN106796934B (zh) | 2019-12-10 |
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