JPWO2016157312A1 - 成膜装置及び成膜装置のクリーニング方法 - Google Patents
成膜装置及び成膜装置のクリーニング方法 Download PDFInfo
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- JPWO2016157312A1 JPWO2016157312A1 JP2017508845A JP2017508845A JPWO2016157312A1 JP WO2016157312 A1 JPWO2016157312 A1 JP WO2016157312A1 JP 2017508845 A JP2017508845 A JP 2017508845A JP 2017508845 A JP2017508845 A JP 2017508845A JP WO2016157312 A1 JPWO2016157312 A1 JP WO2016157312A1
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- Prior art keywords
- supply pipe
- forming apparatus
- film forming
- plasma
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
Abstract
Description
以下本発明を実施の形態1に係る成膜装置1を示す図面に基づいて説明する。図1は成膜装置1の構成を略示する概略図である。
以下本発明を実施の形態2に係る成膜装置1を示す図面に基づいて説明する。図4は成膜装置1の構成を略示する概略図である。供給管10の周囲にはヒータ14が設けられている。また供給管10に温度センサ15が設けられている。
2 チャンバ
10 供給管
14 ヒータ
15 温度センサ
20 基板
50 制御部(プラズマ生成部、温度制御部、供給部)
51 CPU
52 ROM
53 RAM
54 記憶部
55 入力I/F
56 出力I/F
Claims (5)
- 基板に成膜を行うチャンバと、該チャンバにクリーニングガスを供給する為の供給管と、該供給管に設けてあり、クリーニングガスからプラズマを生成するプラズマ生成部とを備える成膜装置において、
前記供給管の温度を所定温度以上に制御する温度制御部と、
予め設定された36時間以下の時間が経過する都度、前記プラズマ生成部にて生成されたプラズマの前記チャンバへの供給を実行する供給部と
を備えることを特徴とする成膜装置。 - 前記所定温度は100℃であり、
前記温度制御部は、生成されるプラズマの温度が100℃以上になるように前記プラズマ生成部の駆動を制御すること
を特徴とする請求項1に記載の成膜装置。 - 前記所定温度は100℃であり、
前記供給管にヒータが設けてあり、
前記温度制御部は前記ヒータの駆動を制御すること
を特徴とする請求項1に記載の成膜装置。 - 前記36時間以下の時間は5乃至36時間であること
を特徴とする請求項1から3のいずれか一つに記載の成膜装置。 - チャンバ内に設置された基板に成膜を行った後、プラズマ生成部にてクリーニングガスからプラズマを生成し、生成したプラズマを前記チャンバに供給管を通して供給し、前記供給管をクリーニングする成膜装置のクリーニング方法であって、
前記供給管の温度を所定温度以上に制御する供給管温度制御工程と、
予め設定された36時間以下の時間が経過する都度、前記プラズマ生成部にて生成されたプラズマの前記チャンバへの供給を実行するプラズマ供給工程と
を備えることを特徴とする成膜装置のクリーニング方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2015/059701 WO2016157312A1 (ja) | 2015-03-27 | 2015-03-27 | 成膜装置及び成膜装置のクリーニング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016157312A1 true JPWO2016157312A1 (ja) | 2018-01-18 |
JP6417471B2 JP6417471B2 (ja) | 2018-11-07 |
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JP2017508845A Expired - Fee Related JP6417471B2 (ja) | 2015-03-27 | 2015-03-27 | 成膜装置及び成膜装置のクリーニング方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10269538B2 (ja) |
JP (1) | JP6417471B2 (ja) |
WO (1) | WO2016157312A1 (ja) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07130706A (ja) * | 1993-10-29 | 1995-05-19 | Toshiba Corp | 半導体製造装置のクリーニング方法 |
JP2000323467A (ja) * | 1999-05-11 | 2000-11-24 | Nippon Asm Kk | 遠隔プラズマ放電室を有する半導体処理装置 |
JP2001274105A (ja) * | 2000-01-18 | 2001-10-05 | Asm Japan Kk | セルフクリーニング用の遠隔プラズマソースを備えた半導体処理装置 |
JP2004186404A (ja) * | 2002-12-03 | 2004-07-02 | Anelva Corp | プラズマ処理装置 |
JP2005056925A (ja) * | 2003-08-06 | 2005-03-03 | Hitachi Ltd | プラズマ処理装置および処理室内壁面安定化方法 |
JP2006190741A (ja) * | 2005-01-05 | 2006-07-20 | Seiko Epson Corp | 成膜装置のクリーニング方法及びクリーニング装置、成膜装置 |
JP2008028307A (ja) * | 2006-07-25 | 2008-02-07 | Hitachi Kokusai Electric Inc | 基板の製造方法及び熱処理装置 |
JP2008218984A (ja) * | 2007-02-06 | 2008-09-18 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2009094380A (ja) * | 2007-10-11 | 2009-04-30 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2009242835A (ja) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
JP2010016033A (ja) * | 2008-07-01 | 2010-01-21 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
WO2011013810A1 (ja) * | 2009-07-31 | 2011-02-03 | 株式会社 アルバック | 半導体装置の製造方法及び半導体装置の製造装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US6863019B2 (en) * | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
JP2003264186A (ja) | 2002-03-11 | 2003-09-19 | Asm Japan Kk | Cvd装置処理室のクリーニング方法 |
JP2006128485A (ja) * | 2004-10-29 | 2006-05-18 | Asm Japan Kk | 半導体処理装置 |
KR100819096B1 (ko) * | 2006-11-21 | 2008-04-02 | 삼성전자주식회사 | Peox공정을 진행하는 반도체 제조설비의 리모트 플라즈마를 이용한 세정방법 |
JP6476369B2 (ja) * | 2013-03-25 | 2019-03-06 | 株式会社Kokusai Electric | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
JP5764228B1 (ja) * | 2014-03-18 | 2015-08-12 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
-
2015
- 2015-03-27 WO PCT/JP2015/059701 patent/WO2016157312A1/ja active Application Filing
- 2015-03-27 US US15/558,888 patent/US10269538B2/en active Active
- 2015-03-27 JP JP2017508845A patent/JP6417471B2/ja not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07130706A (ja) * | 1993-10-29 | 1995-05-19 | Toshiba Corp | 半導体製造装置のクリーニング方法 |
JP2000323467A (ja) * | 1999-05-11 | 2000-11-24 | Nippon Asm Kk | 遠隔プラズマ放電室を有する半導体処理装置 |
JP2001274105A (ja) * | 2000-01-18 | 2001-10-05 | Asm Japan Kk | セルフクリーニング用の遠隔プラズマソースを備えた半導体処理装置 |
JP2004186404A (ja) * | 2002-12-03 | 2004-07-02 | Anelva Corp | プラズマ処理装置 |
JP2005056925A (ja) * | 2003-08-06 | 2005-03-03 | Hitachi Ltd | プラズマ処理装置および処理室内壁面安定化方法 |
JP2006190741A (ja) * | 2005-01-05 | 2006-07-20 | Seiko Epson Corp | 成膜装置のクリーニング方法及びクリーニング装置、成膜装置 |
JP2008028307A (ja) * | 2006-07-25 | 2008-02-07 | Hitachi Kokusai Electric Inc | 基板の製造方法及び熱処理装置 |
JP2008218984A (ja) * | 2007-02-06 | 2008-09-18 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2009094380A (ja) * | 2007-10-11 | 2009-04-30 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2009242835A (ja) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
JP2010016033A (ja) * | 2008-07-01 | 2010-01-21 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
WO2011013810A1 (ja) * | 2009-07-31 | 2011-02-03 | 株式会社 アルバック | 半導体装置の製造方法及び半導体装置の製造装置 |
Also Published As
Publication number | Publication date |
---|---|
US10269538B2 (en) | 2019-04-23 |
JP6417471B2 (ja) | 2018-11-07 |
US20180068832A1 (en) | 2018-03-08 |
WO2016157312A1 (ja) | 2016-10-06 |
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