JPWO2016132581A1 - 圧電素子および圧電センサ - Google Patents
圧電素子および圧電センサ Download PDFInfo
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000005616 pyroelectricity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- H—ELECTRICITY
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
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- H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
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- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
- H10N30/053—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by integrally sintering piezoelectric or electrostrictive bodies and electrodes
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
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- H10N35/00—Magnetostrictive devices
- H10N35/01—Manufacture or treatment
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- Chemical & Material Sciences (AREA)
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- Ceramic Engineering (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
図1は、本発明の第1実施形態に係る圧電素子1の斜視図である。図1を参照して、X軸方向を長さ方向と定義し、Y軸方向を厚み方向と定義し、Z軸方向を幅方向と定義する。
図2に示すように、第1圧電体層2Aは、第1主表面2Aaおよび第2主表面2Abを有しており、第2圧電体層2Bは、第1主表面2Baおよび第2主表面2Bbを有している。第1圧電体層2Aおよび第2圧電体層2Bは、いずれもチタン酸ジルコン鉛酸などの圧電セラミックスからなる。
図3に示す等価回路は、圧電素子1において、第1圧電体層2Aと第2圧電体層2Bとが、互いの分極方向が逆となるように並列接続されていることを示す。したがって、圧電素子1において、熱勾配により発生する電荷を打ち消すことが可能となる。
図5は、本発明の第2実施形態に係る圧電素子21の断面図である。
図6は、本発明の第3実施形態に係る圧電素子31の斜視図である。
図7は、本発明の第4実施形態に係る圧電素子41の断面図である。
Claims (8)
- 厚み方向を分極方向とする第1および第2圧電体層ならびに前記第1圧電体層と前記第2圧電体層との間に設けられた弾性体層を有する積層体と、
前記積層体の外表面に設けられた第1および第2端子電極と、
前記第1圧電体層の正の極性面に設けられた第1検出用電極と、
前記第1圧電体層の負の極性面に設けられた第2検出用電極と、
前記第2圧電体層の正の極性面に設けられた第3検出用電極と、
前記第2圧電体層の負の極性面に設けられた第4検出用電極と、を備え、
前記第1検出用電極と前記第4検出用電極は、前記第1端子電極に接続され、
前記第2検出用電極と前記第3検出用電極は、前記第2端子電極に接続されている、圧電素子。 - 前記第1圧電体層と前記第2圧電体層は、分極方向が同じである、請求項1に記載の圧電素子。
- 前記弾性体層は、前記第1圧電体層と前記第2圧電体層との間の長さ方向における端面付近に設けられ、
前記第1圧電体層と前記第2圧電体層との間の長さ方向における中央部に接着層が設けられている、請求項1または2に記載の圧電素子。 - 前記検出用電極は、前記積層体の端面および側面の一部に露出し、
前記端子電極は、前記積層体の端面および側面の一部に設けられている、請求項1から3のいずれかに記載の圧電素子。 - 前記端子電極は、前記積層体の側面の長さ方向における中央部で前記検出用電極と接続されている、請求項1から4のいずれかに記載の圧電素子。
- 請求項1から5のいずれかに記載の圧電素子が、変形を検出すべき対象物に実装されている、圧電センサ。
- 前記第2圧電体層は、前記第1圧電体層よりも前記対象物側に設けられ、
前記弾性体層によって生じる前記第1圧電体層と前記第2圧電体層との伸びの差により、前記対象物の変形を検出する、請求項6に記載の圧電センサ。 - 前記圧電素子は、前記対象物に接合部によって接続され、
前記接合部は、前記圧電素子の端面において、前記第1圧電体層に達しない高さに形成されている、請求項6または7に記載の圧電センサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015029476 | 2015-02-18 | ||
JP2015029476 | 2015-02-18 | ||
PCT/JP2015/076397 WO2016132581A1 (ja) | 2015-02-18 | 2015-09-17 | 圧電素子および圧電センサ |
Publications (1)
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JPWO2016132581A1 true JPWO2016132581A1 (ja) | 2017-08-24 |
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JP2017500272A Pending JPWO2016132581A1 (ja) | 2015-02-18 | 2015-09-17 | 圧電素子および圧電センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10502542B2 (ja) |
JP (1) | JPWO2016132581A1 (ja) |
CN (1) | CN107208999B (ja) |
WO (1) | WO2016132581A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6252678B2 (ja) * | 2014-07-04 | 2017-12-27 | 株式会社村田製作所 | 圧電センサおよび圧電素子 |
KR102612961B1 (ko) | 2017-12-29 | 2023-12-12 | 삼성전자주식회사 | 스피커용 압전 소자 및 그의 제조 방법 |
CN116182695A (zh) * | 2018-12-17 | 2023-05-30 | 阿尔卑斯阿尔派株式会社 | 轮胎传感器模块以及轮胎传感器装置 |
CN110534637A (zh) * | 2019-08-22 | 2019-12-03 | 东莞东阳光科研发有限公司 | 一种叠层共烧结压电陶瓷器件及所用的补偿胶水浆料 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56144585A (en) * | 1980-04-11 | 1981-11-10 | Toshiba Corp | Bimorph piezoelectric element |
JPS62156503A (ja) * | 1985-12-27 | 1987-07-11 | Daikin Ind Ltd | 圧電センサ |
JPS62238417A (ja) * | 1986-04-09 | 1987-10-19 | Meidensha Electric Mfg Co Ltd | 多機能マトリツクスセンサ |
JPH08293631A (ja) * | 1995-04-24 | 1996-11-05 | Tokin Corp | 圧電バイモルフ |
JP2009295788A (ja) * | 2008-06-05 | 2009-12-17 | Saginomiya Seisakusho Inc | 圧電素子および圧電素子を用いた力センサならびに力センサを用いた流量計 |
WO2013157508A1 (ja) * | 2012-04-17 | 2013-10-24 | 株式会社村田製作所 | 押圧力センサ |
JP2015015500A (ja) * | 2014-10-15 | 2015-01-22 | 株式会社村田製作所 | セラミック電子部品及びその実装構造体 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US2911370A (en) * | 1959-11-03 | Time after polarization | ||
JP3925414B2 (ja) * | 2002-04-26 | 2007-06-06 | 株式会社村田製作所 | 圧電型電気音響変換器 |
JP4427665B2 (ja) | 2004-07-28 | 2010-03-10 | 国立大学法人広島大学 | 曲げ変形センサおよび変形測定装置 |
JP2006048302A (ja) | 2004-08-03 | 2006-02-16 | Sony Corp | 圧電複合装置、その製造方法、その取扱方法、その制御方法、入出力装置及び電子機器 |
EP2290719B1 (en) * | 2008-05-12 | 2015-08-12 | Murata Manufacturing Co., Ltd. | Piezoelectric element and audio equipment |
EP2495776B1 (en) * | 2009-10-28 | 2015-03-18 | Kyocera Corporation | Multilayered piezoelectric element and injection device and fuel injection system using the same |
EP2982938B1 (en) * | 2011-04-08 | 2018-08-29 | Murata Manufacturing Co., Ltd. | Operation device including displacement sensor |
-
2015
- 2015-09-17 JP JP2017500272A patent/JPWO2016132581A1/ja active Pending
- 2015-09-17 WO PCT/JP2015/076397 patent/WO2016132581A1/ja active Application Filing
- 2015-09-17 CN CN201580075765.4A patent/CN107208999B/zh active Active
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2017
- 2017-08-10 US US15/673,444 patent/US10502542B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56144585A (en) * | 1980-04-11 | 1981-11-10 | Toshiba Corp | Bimorph piezoelectric element |
JPS62156503A (ja) * | 1985-12-27 | 1987-07-11 | Daikin Ind Ltd | 圧電センサ |
JPS62238417A (ja) * | 1986-04-09 | 1987-10-19 | Meidensha Electric Mfg Co Ltd | 多機能マトリツクスセンサ |
JPH08293631A (ja) * | 1995-04-24 | 1996-11-05 | Tokin Corp | 圧電バイモルフ |
JP2009295788A (ja) * | 2008-06-05 | 2009-12-17 | Saginomiya Seisakusho Inc | 圧電素子および圧電素子を用いた力センサならびに力センサを用いた流量計 |
WO2013157508A1 (ja) * | 2012-04-17 | 2013-10-24 | 株式会社村田製作所 | 押圧力センサ |
JP2015015500A (ja) * | 2014-10-15 | 2015-01-22 | 株式会社村田製作所 | セラミック電子部品及びその実装構造体 |
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US10502542B2 (en) | 2019-12-10 |
CN107208999A (zh) | 2017-09-26 |
WO2016132581A1 (ja) | 2016-08-25 |
US20170363409A1 (en) | 2017-12-21 |
CN107208999B (zh) | 2019-07-23 |
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