JPWO2016017078A1 - 成膜方法、真空処理装置、半導体発光素子の製造方法、半導体発光素子、半導体電子素子の製造方法、半導体電子素子、照明装置 - Google Patents
成膜方法、真空処理装置、半導体発光素子の製造方法、半導体発光素子、半導体電子素子の製造方法、半導体電子素子、照明装置 Download PDFInfo
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Abstract
Description
なお、チルトやツイストのモザイク広がりの大きさは、基板表面に平行に形成された特定の格子面(対称面)や、基板表面に垂直に形成された特定の格子面に対してXRC測定を行い、得られた回折ピークのFWHMを調べることで評価することができる。
すなわち、特許文献2には、スパッタリング法を用いて成膜したIII族窒化物半導体からなる緩衝層について、極性の制御方法が記載されていない。本発明者らが、特許文献2に開示された技術の確認実験を行なった結果においても、得られた発光素子では良好な発光特性を得ることができなかった。
本発明の第一の実施例として、本発明の一実施形態にかかる、ウルツ鉱構造を有するIII族窒化物半導体薄膜の成膜方法を用いてAlN膜をα−Al2O3(0001)基板上に成膜する例、より詳しくは、基板保持装置によりヒーターの基板対向面との隙間を有して載置したα−Al2O3(0001)基板上にスパッタリング法を用い、第二の基板保持装置のインピーダンスを調整した状態で、ウルツ鉱構造を有するAlN膜を形成する例について説明する。なお、本実施例において、AlN膜は図1と同様のスパッタリング装置を用いて成膜し、ヒーターの構造は図2、ヒーター電極のパターンは図4A、基板保持装置は図5、ホルダー支持部は図6と同様のものを用いる。図6におけるマッチングボックス9005の回路図は、図14Aである。また、図5における基板支持部704aとヒーター103の基板対向面Pとの間の隙間d1と基板107とヒーター103の基板対向面Pとの間の隙間d2は、それぞれ、1mm、2mmとする。
本発明の第一の比較例として、本発明に特徴的な第二の基板支持装置のインピーダンスの調整を行わず、α−Al2O3(0001)基板上にスパッタリング法を用いてAlN膜を形成する例について説明する。なお、本比較例において、AlN膜は第二の基板支持装置のインピーダンスの調整を行わなかったことを除いて第一の実施例と同一のスパッタリング装置、ヒーター、ヒーター電極を用いる。また、AlN膜の成膜条件も第一の実施例と同一の条件を用いる。
本実施例では、フッ酸処理により表面の自然酸化膜を除去したSi(111)基板を用い、その他は、第一の実施例と同様の方法・条件によってウルツ鉱構造を有するAlN膜を形成する。ただし、本実施例における成膜温度(550℃)は、熱電対を埋め込んだSi(111)基板により、あらかじめ行う基板温度測定の結果に基づいて設定している。
本比較例では、第二の基板支持装置のインピーダンスを調整せず、その他は、第二の実施例と同様の方法・条件を用いて、Si(111)基板上にAlN膜を形成する。その結果、処理した基板間での+c極性の再現性が悪くなることがわかった。
本実施例では、ターゲット材料とプロセスガス、成膜温度および膜厚を除いて、第一の実施例と同様の方法・条件によって、ウルツ鉱構造を有するZnO膜をα−Al2O3(0001)基板上に形成する。ターゲット材料は金属Zn、プロセスガスはO2とArの混合ガス(O2/(O2+Ar):25%)、成膜温度は800℃、膜厚は100nmとした。
本比較例では、第二の基板支持装置のインピーダンスを調整せず、その他は、第三の実施例と同様の方法・条件を用いて、ZnO膜をα−Al2O3(0001)基板上に形成する。本比較例に係るZnO膜は、第三の実施例と同様にc軸配向したエピタキシャル膜として得られるが、処理した基板間での+c極性の再現性が悪くなることがわかった。
本実施例では、図7に示すホルダー支持部の構成例を用いて、AlN膜をα−Al2O3(0001)基板上に形成した例について説明する。図7におけるインピーダンス可変機構9002の回路図は、図14Bに示す構造とした。本実施例では、図14BにおけるC1が219〜1370pF、C2が80.5〜480pFで可変可能なコンデンサと、C3が4.7pFの固定コンデンサと、L2が0.886μH、L1が0.35μHのコイルとを有するインピーダンス可変機構9002を用いる。まず始めに、C1を1370pF、C2を144.42pFとなるように設定し、実施例1と同様の条件でAlN膜を成膜した。それぞれの可変コンデンサの調整値は、センサ9001の測定結果に基づいて予め決定しておいた値である。この時の、センサ9001によって測定した、ターゲット電極に誘起されている電圧と、第二の基板支持装置に誘起されている電圧との関係は図11と同様であった。
本実施例では、上述の実施例で得られたAlN膜を用いて半導体発光素子および半導体電子素子を作製した。その結果、本発明の成膜方法で製造された半導体発光素子間および半導体電子素子間において、安定した品質を得ることができた。また、製造された半導体発光素子を用いて照明装置を作製した場合も、安定した品質を得ることができた。
Claims (10)
- 真空排気可能な真空容器と、
前記真空容器内に基板を支持するための基板保持部と、
前記基板保持部に保持された前記基板を任意の温度に加熱できるヒーターと、
前記真空容器内に設けられ、ターゲットを取り付けることが可能なターゲット電極と、
前記ターゲット電極を介して前記ターゲットに高周波電力を投入する高周波電源と、
前記基板保持部に保持された前記基板の周囲に配置され、前記高周波電源から投入された高周波電力が接地に帰還する帰還経路の一部を形成する電極部と、
前記電極部のインピーダンスを調整するインピーダンス調整部と、を備えた真空処理装置を用いて、前記基板上にスパッタリング法によりウルツ鉱構造の半導体薄膜のエピタキシャル膜を形成する成膜方法であって、
前記基板を前記ヒーターの基板対向面と所定距離だけ離間して保持されるように前記基板保持部に保持させる基板搬送工程と、
前記基板保持部に保持された前記基板上にウルツ鉱構造の半導体薄膜を形成する成膜工程と、
前記成膜工程の際に、前記電極部のインピーダンスが所定の値になるように前記インピーダンス調整部を調整するインピーダンス調整工程と、
を有することを特徴とする成膜方法。 - 前記基板搬送工程によって前記基板保持部に保持された前記基板を、前記ヒーターにより任意の温度に加熱する基板加熱工程をさらに有し、
前記成膜工程は、前記基板加熱工程によって加熱された前記基板上にウルツ鉱構造の半導体薄膜のエピタキシャル膜を形成するものであることを特徴とする請求項1に記載の成膜方法。 - 前記基板保持部は、前記基板の重力方向下側の面に当接した状態で、前記基板を保持することを特徴とする請求項2に記載の成膜方法。
- 真空排気可能な真空容器と、
前記真空容器内に基板を支持するための基板保持部と、
前記基板保持部に保持された前記基板を任意の温度に加熱できるヒーターと、
前記真空容器内に設けられ、ターゲットを取り付けることが可能なターゲット電極と、
前記ターゲット電極を介して前記ターゲットに高周波電力を投入する高周波電源と、
前記基板保持部に保持された前記基板の周囲に配置され、前記高周波電源から投入された高周波電力が接地に帰還する帰還経路の一部を形成する電極部と、
前記電極部のインピーダンスを調整するインピーダンス調整部と、を備え、
前記基板保持部は、前記真空容器内において、前記ターゲット電極の重力方向に設けられた真空処理装置であって、
前記基板を前記ヒーターの基板対向面と所定距離だけ離間して保持されるように前記基板保持部に保持させる基板搬送工程と、
前記基板保持部に保持された前記基板上にウルツ鉱構造の半導体薄膜を形成する成膜工程と、
前記成膜工程の際に、前記電極部のインピーダンスが所定の値になるように前記インピーダンス調整部を調整するインピーダンス調整工程と、を行うことを特徴とする真空処理装置。 - 前記基板保持部は、前記基板の外周部分を支持するように構成されたリング状の絶縁部材を備えており、
前記電極部は、前記基板保持部の外周部分に設けられたリング状の導電性部材であることを特徴とする請求項4に記載の真空処理装置。 - 請求項1に記載された成膜方法を有することを特徴とする半導体発光素子の製造方法。
- 請求項1に記載された成膜方法によって作製されたウルツ鉱構造の半導体薄膜のエピタキシャル膜を有することを特徴とする半導体発光素子。
- 請求項7に記載の半導体発光素子を備えることを特徴とする照明装置。
- 請求項1に記載された成膜方法を有することを特徴とする半導体電子素子の製造方法。
- 請求項1に記載された成膜方法によって作製されたウルツ鉱構造の半導体薄膜のエピタキシャル膜を有することを特徴とする半導体電子素子。
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WO2012090422A1 (ja) * | 2010-12-27 | 2012-07-05 | キヤノンアネルバ株式会社 | エピタキシャル膜形成方法、スパッタリング装置、半導体発光素子の製造方法、半導体発光素子、および照明装置 |
WO2014002465A1 (ja) * | 2012-06-26 | 2014-01-03 | キヤノンアネルバ株式会社 | エピタキシャル膜形成方法、スパッタリング装置、半導体発光素子の製造方法、半導体発光素子、および照明装置 |
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US11035034B2 (en) | 2021-06-15 |
CN107078031A (zh) | 2017-08-18 |
WO2016017047A1 (ja) | 2016-02-04 |
CN107078031B (zh) | 2020-09-11 |
TW201611089A (zh) | 2016-03-16 |
JP6196384B2 (ja) | 2017-09-13 |
KR20170034905A (ko) | 2017-03-29 |
WO2016017078A1 (ja) | 2016-02-04 |
KR101930281B1 (ko) | 2018-12-18 |
TWI582826B (zh) | 2017-05-11 |
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