JPWO2015146055A1 - ポリマーとそれを用いた太陽電池 - Google Patents
ポリマーとそれを用いた太陽電池 Download PDFInfo
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- JPWO2015146055A1 JPWO2015146055A1 JP2016509986A JP2016509986A JPWO2015146055A1 JP WO2015146055 A1 JPWO2015146055 A1 JP WO2015146055A1 JP 2016509986 A JP2016509986 A JP 2016509986A JP 2016509986 A JP2016509986 A JP 2016509986A JP WO2015146055 A1 JPWO2015146055 A1 JP WO2015146055A1
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- solar cell
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- 229920000642 polymer Polymers 0.000 title claims abstract description 166
- 125000003118 aryl group Chemical group 0.000 claims abstract description 37
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 32
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims abstract description 27
- 125000001072 heteroaryl group Chemical group 0.000 claims abstract description 19
- 125000002252 acyl group Chemical group 0.000 claims abstract description 18
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims abstract description 17
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 claims abstract description 16
- 125000004429 atom Chemical group 0.000 claims abstract description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 13
- 239000011593 sulfur Substances 0.000 claims abstract description 13
- 239000011669 selenium Substances 0.000 claims abstract description 12
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 11
- -1 silylene group Chemical group 0.000 claims description 63
- 238000006243 chemical reaction Methods 0.000 claims description 40
- 239000000872 buffer Substances 0.000 claims description 20
- 238000004132 cross linking Methods 0.000 claims description 18
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 125000005647 linker group Chemical group 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical group FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Chemical group 0.000 claims description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 3
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 203
- 239000000463 material Substances 0.000 description 121
- 239000004065 semiconductor Substances 0.000 description 104
- 238000000605 extraction Methods 0.000 description 88
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 68
- 238000000034 method Methods 0.000 description 53
- 150000001875 compounds Chemical class 0.000 description 48
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 45
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 45
- 239000000758 substrate Substances 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 35
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 34
- 239000000243 solution Substances 0.000 description 34
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 33
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 33
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 33
- 239000000654 additive Substances 0.000 description 32
- 230000000996 additive effect Effects 0.000 description 32
- 239000010408 film Substances 0.000 description 31
- 239000002904 solvent Substances 0.000 description 31
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- 238000011156 evaluation Methods 0.000 description 29
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- 125000001424 substituent group Chemical group 0.000 description 26
- 238000000576 coating method Methods 0.000 description 23
- 229910052757 nitrogen Inorganic materials 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 17
- 238000005160 1H NMR spectroscopy Methods 0.000 description 15
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- 238000005481 NMR spectroscopy Methods 0.000 description 15
- 238000010521 absorption reaction Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 14
- 239000004793 Polystyrene Substances 0.000 description 14
- 229920002223 polystyrene Polymers 0.000 description 14
- 238000000944 Soxhlet extraction Methods 0.000 description 13
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 13
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 12
- 239000000178 monomer Substances 0.000 description 12
- 125000004433 nitrogen atom Chemical group N* 0.000 description 12
- 238000000746 purification Methods 0.000 description 12
- 238000009835 boiling Methods 0.000 description 11
- 229920001940 conductive polymer Polymers 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 10
- 239000012071 phase Substances 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 9
- 239000012299 nitrogen atmosphere Substances 0.000 description 9
- 238000010248 power generation Methods 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- QYKBZWURGFUOFA-UHFFFAOYSA-N 4,6-dibromo-2-octyl-1,1-dioxothieno[3,4-d][1,2]thiazol-3-one Chemical compound BrC=1SC(=C2C=1C(N(S2(=O)=O)CCCCCCCC)=O)Br QYKBZWURGFUOFA-UHFFFAOYSA-N 0.000 description 8
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 8
- 239000002932 luster Substances 0.000 description 8
- 229920000620 organic polymer Polymers 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 229930192474 thiophene Natural products 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- OCFFMJYHZKHRKM-UHFFFAOYSA-N [4,8-bis[5-(2-ethylhexyl)thiophen-2-yl]-2-trimethylstannylthieno[2,3-f][1]benzothiol-6-yl]-trimethylstannane Chemical compound S1C(CC(CC)CCCC)=CC=C1C(C=1SC(=CC=11)[Sn](C)(C)C)=C(C=C(S2)[Sn](C)(C)C)C2=C1C1=CC=C(CC(CC)CCCC)S1 OCFFMJYHZKHRKM-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 239000011135 tin Substances 0.000 description 7
- 238000001771 vacuum deposition Methods 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- 238000006619 Stille reaction Methods 0.000 description 6
- 238000006069 Suzuki reaction reaction Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 238000005191 phase separation Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 6
- 239000002861 polymer material Substances 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- CRUIOQJBPNKOJG-UHFFFAOYSA-N thieno[3,2-e][1]benzothiole Chemical group C1=C2SC=CC2=C2C=CSC2=C1 CRUIOQJBPNKOJG-UHFFFAOYSA-N 0.000 description 6
- 125000001544 thienyl group Chemical group 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 5
- 125000005605 benzo group Chemical group 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000004770 highest occupied molecular orbital Methods 0.000 description 5
- 150000003949 imides Chemical class 0.000 description 5
- 229910052740 iodine Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 150000002894 organic compounds Chemical class 0.000 description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 4
- UUIMDJFBHNDZOW-UHFFFAOYSA-N 2-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=CC=N1 UUIMDJFBHNDZOW-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
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- 239000002131 composite material Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 4
- 239000000123 paper Substances 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
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- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
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- 239000011787 zinc oxide Substances 0.000 description 4
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 3
- BUKDBMOZJQZIOD-UHFFFAOYSA-N 2-octyl-1,1-dioxothieno[3,4-d][1,2]thiazol-3-one Chemical compound C(CCCCCCC)N1S(C=2C(C1=O)=CSC=2)(=O)=O BUKDBMOZJQZIOD-UHFFFAOYSA-N 0.000 description 3
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- 0 CCCCC(CC)CC(C(CC)CCCC)[Si](c1c-2[s]c(C(C)C(C)c([s]c(-c3cc([s]c4c5[s]c(C(C)C)c4)c5[s]3)c3C(N4CC(CC)CCCC)=O)c3S4(=O)=O)c1)c1c-2[s]c(-c2c(C(*(*)S3(=O)=O)=O)c3c(*(C)C)[s]2)c1 Chemical compound CCCCC(CC)CC(C(CC)CCCC)[Si](c1c-2[s]c(C(C)C(C)c([s]c(-c3cc([s]c4c5[s]c(C(C)C)c4)c5[s]3)c3C(N4CC(CC)CCCC)=O)c3S4(=O)=O)c1)c1c-2[s]c(-c2c(C(*(*)S3(=O)=O)=O)c3c(*(C)C)[s]2)c1 0.000 description 3
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
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- 239000011630 iodine Substances 0.000 description 3
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- 238000000926 separation method Methods 0.000 description 3
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- RCGMVCCNAAVDBT-UHFFFAOYSA-N 1,1-dioxothieno[3,4-d][1,2]thiazol-3-one Chemical compound S1C=C2C(=O)NS(=O)(=O)C2=C1 RCGMVCCNAAVDBT-UHFFFAOYSA-N 0.000 description 2
- DLBPTOMGZXBZOX-UHFFFAOYSA-N 1,2-thiazole 1,1-dioxide Chemical compound O=S1(=O)C=CC=N1 DLBPTOMGZXBZOX-UHFFFAOYSA-N 0.000 description 2
- VMKOFRJSULQZRM-UHFFFAOYSA-N 1-bromooctane Chemical compound CCCCCCCCBr VMKOFRJSULQZRM-UHFFFAOYSA-N 0.000 description 2
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- C—CHEMISTRY; METALLURGY
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- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
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Abstract
Description
実施形態における第1のポリマーは、下記の式(2)で表される繰り返し単位を備える有機高分子化合物である。第1のポリマーの重量平均分子量は3000〜1000000の範囲である。
実施形態における第2のポリマーは、下記の式(3)で表される繰り返し単位を備え、重量平均分子量が3000〜1000000の範囲である有機高分子化合物である。
実施形態における第3のポリマーは、下記の式(4)で表される繰り返し単位を備え、重量平均分子量が3000〜1000000の範囲である有機高分子化合物である。実施形態における第4のポリマーは、下記の式(5)で表される繰り返し単位を備え、重量平均分子量が3000〜1000000の範囲である有機高分子化合物である。
実施形態における第5のポリマーは、下記の式(6)で表される繰り返し単位を備え、重量平均分子量が3000〜1000000の範囲である有機高分子化合物である。
実施形態のポリマーの合成方法は、特に限定されるものではない。実施形態のポリマーは、例えば用いる重合反応に適した官能基を有するモノマーを合成した後に、必要に応じて該モノマーを有機溶媒に溶解し、アルカリ、触媒、配位子等を用いた公知のアリールカップリング反応を用いて重合することにより合成することができる。アリールカップリング反応による重合方法としては、例えばスティル(Stille)カップリング反応や鈴木カップリング反応を適用した重合方法が挙げられる。
実施形態の太陽電池は、一対の電極と、それらの間に配置され、有機材料を含む光電変換層とを備える光電変換素子を具備している。光電変換層を構成する各層のうち、有機材料を含む層としては、活性層やバッファ層等が挙げられる。有機材料を含む活性層としては、例えば上述した実施形態のポリマーを含むp型半導体材料(電子供与体/電子ドナー)とn型半導体材料(電子受容体/電子アクセプター)とを有する層が挙げられる。このような有機材料を含む光電変換層を備える光電変換素子は、太陽電池に限らず、光センサや発光素子に適用することも可能である。
実施形態の太陽電池について、図1を参照して説明する。図1に示す太陽電池素子100は、第1の電極120と第2の電極160とこれら電極120、160間に配置された活性層140とを備えている。図1は一般的な有機薄膜太陽電池に用いられる太陽電池素子(光電変換素子)を示しているが、太陽電池素子の構造はこれに限られるものではない。実施形態の太陽電池素子100は、さらに基板110やバッファ層130、150を有していてもよい。第1の電極120は、正孔を捕集する電極(以下、アノードと記載する場合がある)である。第2の電極160は、電子を捕集する電極(以下、カソードと記載する場合がある)である。図1ではアノード120を基板110側に配置しているが、アノード120とカソード160とが逆であってもよく、この場合バッファ層130とバッファ層150とが逆であってもよい。以下、これらの各部について説明する。
実施形態の太陽電池素子100における活性層140は、p型半導体材料(電子供与体)とn型半導体材料(電子受容体)とを含んでいる。p型半導体材料は、実施形態のポリマー、すなわち式(2)、式(3)、式(4)、式(5)、又は式(6)で表される繰り返し単位を備え、重量平均分子量が3000〜1000000以下の範囲であるポリマーを有している。p型半導体材料としてのポリマーの具体的な構成は、先に述べた通りである。n型半導体材料(電子受容体)については、以下に述べる。活性層140は複数種類のp型半導体材料や複数種類のn型半導体材料を含んでいてもよい。
活性層140に含まれるn型半導体材料(電子受容体)としては、フタロシアニン誘導体、フラーレン又はフラーレン誘導体、ホウ素含有ポリマー、ポリ(ベンゾビスイミダゾベンゾフェナントロリン)等が挙げられるが、これらに限定されるものではない。これらの中でも、フラーレン誘導体が好ましい。フラーレン誘導体の具体例としては、1’,1”,4’,4”−Tetrahydro−di[1,4]methanonaphthaleno[1,2:2’,3’,56,60:2”,3”][5,6]fullerene−C60(インデン−C60ビス付加物:IC60BA)、[6,6]−Phenyl C61 butyric acid methyl ester(PC60BM)、[6,6]−Phenyl C71 butyric acid methyl ester(PC70BM)、Dihyrdonaphtyl−based[60]fullerene bisadducts(NC60BA)、Dihyrdonaphtyl−based[70]fullerene bisadducts(NC70BA)等が挙げられるが、これらに限定されるものではない。
電子供与体(p型半導体)から効率よく電子受容体(n型半導体)に電子を移動させるためには、p型半導体材料とn型半導体材料との間でのLUMOエネルギー準位の相対系が重要である。具体的には、p型半導体材料のLUMOエネルギー準位が、n型半導体材料のLUMOエネルギー準位よりも所定のエネルギーだけ高いことが好ましい。言い換えると、p型半導体材料の電子親和力が、n型半導体材料の電子親和力より所定のエネルギーだけ大きいことが好ましい。
活性層140の形成方法は、特に限定されるものではないが、スピンコート法、インクジェット法、ドクターブレード法、ドロップキャスティング法等の湿式塗布法を適用することが好ましい。この場合、p型半導体材料(式(2)〜式(6)で表される繰り返し単位を備えるポリマー)とn型半導体材料とが可溶である溶媒を選択し、ポリマーからなるp型半導体材料とn型半導体材料とを含む塗布液を作製する。この塗布液を塗布することによって、バルクヘテロ接合型の活性層140を形成することができる。
バルクヘテロ接合型の活性層140を塗布法によって形成する場合、塗布液に低分子量の化合物を添加することで、光電変換効率が向上する場合がある。添加剤により相分離構造が最適化され、光電変換効率が向上するメカニズムとしては、複数の要因が考えられる。その要因の1つとして、添加剤の存在によりp型半導体材料同士、あるいはn型半導体材料同士の凝集が抑えられることが考えられる。すなわち、添加剤がない場合、活性層塗布液(インク)の溶媒は、通常、塗布後に直ちに揮発する。この際に残留成分として残るp型半導体材料及びn型半導体材料は、それぞれ大きな凝集体を形成することが考えられる。このような場合には、p型半導体材料とn型半導体材料との間の接合面積(界面の面積)が小さくなってしまうため、電荷の発生効率が低下する。
実施形態の太陽電池素子100における電極120、160は、活性層140が光を吸収することにより生じた正孔又は電子を捕集する機能を有する。従って、第1の電極120は正孔の捕集に適していることが好ましく、第2の電極160は電子の捕集に適していることが好ましい。これら一対の電極120、160は、少なくとも一方が透光性を有することが好ましく、両方が透光性を有していてもよい。透光性を有するとは、太陽光が40%以上透過することを意味する。透光性を有する電極は、太陽光が70%以上透過することがより好ましく、これにより透明電極を透過させて活性層140に光を到達させやすくなる。光の透過率は通常の分光光度計で測定することでき、例えば可視光線(400nm〜800nm)についての平均透過率を示す。
正孔の捕集に適した電極(アノード)120とは、一般的には仕事関数がカソード160よりも高い値を示す導電性材料で構成された電極である。このようなアノード120によれば、活性層140で発生した正孔をスムーズに取り出すことができる。アノード120の形成材料としては、例えば酸化ニッケル、酸化スズ、酸化インジウム、酸化スズインジウム(ITO)、フッ素ドープ酸化スズ(FTO)、インジウム−ジルコニウム酸化物(IZO)、酸化チタン、酸化亜鉛等の導電性金属酸化物、金、白金、銀、クロム、コバルト等の金属、あるいはそれらの合金が挙げられる。これらの物質は高い仕事関数を有するために好ましい。アノード120が透明電極である場合には、ITO、酸化亜鉛、酸化スズ等の透光性を有する導電性金属酸化物、Au、Ag、Cu等の金属ナノワイヤー又はカーボンナノチューブ(CNT)と導電性金属酸化物との複合体又は積層体、Au、Ag、Cu等の金属ナノワイヤー又はカーボンナノチューブ(CNT)と導電性高分子との複合体又は積層体等を用いることが好ましく、特にITOを用いることが好ましい。
電子の捕集に適した電極(カソード)とは、一般的には仕事関数がアノードよりも高い値を示す導電性材料で構成された電極である。このようなカソード160は、活性層140で発生した電子をスムーズに取り出すことができる。カソード160の形成材料としては、例えば白金、金、銀、銅、鉄、スズ、亜鉛、アルミニウム、インジウム、クロム、リチウム、ナトリウム、カリウム、セシウム、カルシウム、マグネシウム等の金属、あるいはそれら金属を少なくとも1つ含む合金、フッ化リチウム、フッ化セシウム等の無機塩、酸化ニッケル、酸化アルミニウム、酸化リチウム、酸化セシウム等の金属酸化物が挙げられる。これらの材料は低い仕事関数を有するため、カソード160の材料に適している。
実施形態の太陽電池素子100は、一対の電極120、160とそれらの間に配置される活性層140の他に、さらに1層以上のバッファ層を有していてもよい。バッファ層は、正孔取り出し層130と電子取り出し層150とに分類することができる。通常、正孔取り出し層130は活性層140とアノード120との間に配置され、電子取り出し層150は活性層140とカソード160との間に配置される。
正孔取り出し層130の材料は、活性層140からアノード120への正孔の取り出し効率を向上させることが可能な材料であれば、特に限定されない。具体的には、ポリチオフェン、ポリピロール、ポリアセチレン、トリフェニレンジアミンポリピロール、ポリアニリン等に、スルフォン酸及びヨウ素の少なくとも一方のドーピング材料をドーピングした導電性ポリマーが挙げられる。それら中でも、スルフォン酸をドーピングした導電性ポリマーが好ましく、さらにはポリチオフェン誘導体にポリスチレンスルフォン酸をドーピングしたPEDOT:PSSがより好ましい。酸化タングステン、酸化モリブデン等の金属酸化物半導体を用いてもよい。金、インジウム、銀、パラジウム等の金属の薄膜も、正孔取り出し層130として使用することができる。金属薄膜は、単独で正孔取り出し層130として用いてもよい。金属薄膜と上記した導電性ポリマーとを組み合わせて、正孔取り出し層130として用いることもできる。
電子取り出し層150の材料は、活性層140からカソード160へ電子の取り出し効率を向上させることが可能な材料であれば、特に限定されない。電子取り出し層150の形成材料は、大きく分けて無機化合物と有機化合物とがある。電子取り出し層150は、どちらかの材料のみを用いて形成してもよいし、両方の材料を用いて形成してもよい。無機化合物層と有機化合物層との積層体を、電子取り出し層150として用いてもよい。
バッファ層130、150の形成方法は、特に限定されるものではない。いくつかの材料の成膜方法については、上述した通りである。一般的に、昇華性を有する材料を用いる場合には、真空蒸着法等の真空成膜法を用いることができる。溶媒に可溶な材料を用いる場合には、スピンコートやインクジェット等の湿式塗布法を用いることができる。
太陽電池素子100は、通常支持体となる基板110を有する。すなわち、基板110上に、電極120、160と活性層140とバッファ層130、150とが形成される。基板110の材料は特に限定されない。基板材料としては、石英、ガラス、サファイア、チタニア等の無機材料、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリエーテルスルホン、ポリイミド、ナイロン、ポリスチレン、ポリビニルアルコール、エチレンビニルアルコール共重合体、フッ素樹脂、塩化ビニル、ポリエチレンのようなポリオレフィン、セルロース、ポリ塩化ビニリデン、アラミド、ポリフェニレンスルフィド、ポリウレタン、ポリカーボネート、ポリアリレート、ポリノルボルネン、エポキシ樹脂等の有機材料、紙、合成紙等の紙材料、ステンレス、チタン、アルミニウム等の金属に絶縁性を付与する層を塗布又は積層した複合材料等が挙げられる。ガラスとしては、ソーダガラス、青板ガラス、無アルカリガラス等が挙げられる。ガラスの材質については、ガラスからの溶出イオンが少ない方がよいので、無アルカリガラスが好ましい。0.3mm以下の薄いガラスを用いる場合には、割れにくくするために、上記のポリマーフイルムとの積層体を基板として用いてもよい。
実施形態の太陽電池素子100は、上述したような方法で、基板110上に電極120、活性層140、電極160を順次形成することにより作製される。バッファ層130、150を設ける場合には、基板110上に電極120、バッファ層130、活性層140、バッファ層150、電極160を順次形成すればよい。さらに、基板110上に各層を順次形成することにより得られた積層体に対して、加熱処理(アニール処理)を行うことが好ましい。アニール処理を行うことによって、太陽電池素子100の熱安定性や耐久性が向上することがある。アニール処理で各層間の密着性が向上する場合もあり、その理由の1つとして考えられる。
次に、実施形態の太陽電池の他の例について説明する。ここでは、実施形態の太陽電池を有機/無機ハイブリッド太陽電池に適用した例について述べる。有機/無機ハイブリッド太陽電池は、例えば基板/カソード電極/電子取り出し層/活性層/正孔取り出し層/アノード電極の積層構造(逆構造)を有している。前述した有機薄膜太陽電池は、基板/アノード電極/正孔取り出し層/活性層/電子取り出し層/カソード電極の積層構造(順構造)を有している。ただし、有機薄膜太陽電池に逆構造を適用することも可能である。
CH3NH4ML3 …(13)
式(13)において、Mは鉛(Pb)及びスズ(Sn)からなる群より選ばれる少なくとも1つの原子であり、Lはヨウ素(I)、臭素(Br)、及び塩素(Cl)からなる群より選ばれる少なくとも1つの原子である。
ポリ(4,8−ビス(5−(2−エチルヘキシル)チエニル)ベンゾ[1,2−b:4,5−b’]ジチオフェン−2,6−ジイル−alt−(N−オクチル―2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール―1,1−ジオン−4,6−ジイル))[P1]の合成
4つ口フラスコに水素化ナトリウム0.497gを量り取り、温度計、窒素導入還流管、及び滴下ロートを備え付け、回転子を入れて、窒素を流して窒素雰囲気にした後、無水のDMF10mLを加える。滴下ロートには、無水DMF20mLに溶かした2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール−1,1−ジオン1.892g(10mmol)を入れる。フラスコを氷水で冷却した後、その溶液を滴下する。滴下後、室温に戻して2時間反応させた後、無水DMF10mLに溶かした1−ブロモ−オクタン(3.100g)を加える。室温で30分撹拌した後、80℃で6時間反応させる。室温に戻した後、水を加え、クロロホルムで抽出し、有機層を無水硫酸マグネシウムで乾燥し、減圧下で溶媒を除いた後、カラムクロマト(シリカゲル、展開溶媒トルエン)で精製を行い、1.799g(収率59.5%))のN−オクチル−2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール−1,1−ジオンを得た。
4つ口フラスコに還流管、滴下ロート、温度計を備え付け、回転子を入れ、N−オクチル−2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール−1,1−ジオン1.786g(5.93mmol)とN−ブロモサクシンイミド3.170g(17.8mmol)を加える。そこに、濃硫酸9mLとトリフルオロ酢酸30mLを滴下ロートから加える。室温で、18時間反応させた後、氷水約400mLのビーカ中に反応混合物を注ぎ入れる。クロロホルムで抽出し、有機層を無水マグネシウムで乾燥させた後、減圧下で溶媒を濃縮する。残留物をカラムクラマト(シリカゲル、トルエン/ヘキサン)で精製し、4,6−ジブロモ−N−オクチル−2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール−1,1−ジオンの白色固体1.771g(収率67.1%)を得た。
ポリ(4,8−ビス(5−(2−エチルヘキシル)チエニル)ベンゾ[1,2−b:4,5−b’]ジチオフェン−2,6−ジイル―alt−(N−(2−エチルヘキシル)−2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール−1,1−ジオン−4,6−ジイル))[P2]の合成
ポリ(4,8−ビス(5−(2−エチルヘキシル)チエニル)ベンゾ[1,2−b:4,5−b’]ジチオフェン−2,6−ジイル−alt−(N−(4−オクチル)フェニル−2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール−1,1−ジオン−4,6−ジイル))[P3]の合成
ポリ(4,8−ビス(5−(2−エチルヘキシル)チエニル)ベンゾ[1,2−b:4,5−b’]ジチオフェン−2,6−ジイル−alt−(N−ヘプチル―2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール−1,1−ジオン−4,6−ジイル))[P4]の合成
ポリ(3,3’−ジオクチル−2−2’−ビチオフェン−5,5’−ジイル−alt−(N−ヘプチル−2,3−ジヒドロ−3−オキソ−チエノ[3,4−]イソチアゾール−1,1−ジオン−4,6−ジイル))[P5]の合成
ポリ(3−オクチル−チオフェン−2,5’−ジイル−alt−(N−ヘプチル−2,3−ジヒドロ−3−オキソ−チエノ[3,4−]イソチアゾール−1,1−ジオン−4,6−ジイル))[P6]の合成
ポリ(チエノ[3,2−b]チオフェン−2,5−ジイル−alt−(N−ヘプチル―2,3−ジヒドロ−3−オキソ−チエノ[3,4−]イソチアゾール−1,1−ジオン−4,6−ジイル))[P7]の合成
ポリ(4,4’−ビス(2−エチルヘキシル)ジチエノ[3,2−b:2’,3’−b]シロール−2,6−ジイル−alt−(N−ヘプチル―2,3−ジヒドロ−3−オキソ−チエノ[3,4−]イソチアゾール−1,1−ジオン−4,6−ジイル))[P8]の合成
ポリ(4,4’−ビス(2−エチルヘキシル)ジチエノ[3,2−b:2’,3’−b]ゲルモール−2,6−ジイル−alt−(N−ヘプチル―2,3−ジヒドロ−3−オキソ−チエノ[3,4−]イソチアゾール−1,1−ジオン−4,6−ジイル))[P9]の合成
ポリ(4,4’−ジエチルヘキシル−4H−シクロペンタ[2,1−b:3,4−b’]ジチオフェン−2,6−ジイル−alt−(N−(2−ヘプチル)−2,3−ジヒドロ−3−オキソ−チエノ[3,4−]イソチアゾール−1,1−ジオン−4,6−ジイル))[P10]の合成
ポリ(4,4’−ビス(2−エチルヘキシル)ジチエノ[3,2−b:2’,3’−b]シロール−2,6−ジイル−alt−(N−(6−ブロモヘキシル)−2,3−ジヒドロ−3−オキソ−チエノ[3,4−]イソチアゾール−1,1−ジオン−4,6−ジイル))[P11]の合成
ポリ(4,8−ビス(5−(2−エチルヘキシル)チエニル)ベンソ[1,2−b:4,5−b’]ジチオフェン−2,6−ジイル−alt−(2,6−(5−チオフェン−2−イル)−N−ヘプチル―2,3−ジヒドロ−3−オキソ−チエノ[3,4−d]イソチアゾール−1,1−ジオン−4,6−ジイル))[P12]の合成
特開2011−168747号公報の記載を参照して、1,3−ジブロモ−N−オクチル−チエノ[3,4−C]ピロール−4,6−ジオンを合成した。2,5−ビス(トリブチルスズ)チオフェンとのカップリン反応も同様に行って黒色固体を得た。
[有機薄膜太陽電池素子の作製]
p型半導体材料である実施例1〜12のポリマー(P1〜P12)及び比較例1〜2のポリマーを、n型半導体材料であるPC70BMとの質量比が1:2となるように混合した。次いで、混合物の濃度が2.0質量%となるように、窒素雰囲気中で混合物をクロロベンゼンに溶解させた。溶液全体の3質量%の割合となるように1,8−ジヨードオクタンを添加し、ホットスターラーを用いて120℃の温度にて1時間撹拌混合した。撹拌混合後の溶液を室温に冷却した後、0.20μmのポリテトラフルオロエチレン(PTFE)フィルタで濾過することにより、それぞれのポリマーを用いた活性層塗布液を得た。
作製した太陽電池素子に1cm角のメタルマスクを付け、照射光源としてエアマス(AM)1.5G、放射照度100mW/cm2の朝日分光社製SPECTRソーラシミュレータ−IVP0605(商品名)を用いて、ITO電極とアルミニウム電極との間の電流−電圧特性を測定した。表1に測定結果として開放電圧(Voc)、短絡電流密度(Jsc)、フィルファクタ(FF)、及び変換効率を示す。
インジウム・スズ酸化物(ITO)の透明導電膜がパターニングされたガラス基板を、界面活性剤による超音波洗浄、超純水による水洗、超純水による超音波洗浄の順で洗浄した後、窒素ブローで乾燥させ、120℃で大気中5分間加熱乾燥した。最後に、基板に対して紫外線オゾン洗浄を行った。この基板上に、正孔取り出し層としてポリ(3,4−エチレンジオキシチオフェン)ポリスチレンスルホン酸の水性分散液(ヘレウス社製PH500(商品名))をスピンコートにより塗布し、塗布後の基板を140℃のホットプレート上にて5分間大気中で加熱した。正孔取り出し層の膜厚は約40nmであった。
(実施例26〜28)
ヨウ素化鉛(PbI2)とヨウ素化メチルアンモニウム(CH3NH4I)とを1:1のモル比で混合し、この混合物を濃度が40質量%となるように窒素雰囲気中でジメチルホルムアミドに溶解させた。この溶液をホットスターラーを用いて120℃の温度にて1時間撹拌混合した。撹拌混合後の溶液を室温に冷却した後、0.45μmのポリテトラフルオロエチレン(PTFE)フィルタで濾過することによって、活性層塗布液を得た。
正孔取り出し層の形成材料として、ポリ(3−ヘキシルチオフェン−2,5−ジイル)(P3HT)を用いる以外は、実施例26と同様にして、有機/無機ハイブリット太陽電池素子を作製した。
正孔取り出し層を以下のようにして形成する以外は、実施例26と同様にして、有機/無機ハイブリット太陽電池素子を作製した。2,2’,7,7’−テトラキス(N,N−ジ−p−メトキシフェニルアミン)−9,9’−ビフルオレン(spiro−OMeTAD)180mgをジクロロベンゼン1mLに溶解させた。この溶液にビス(トリフルオロメタンスルホニル)イミドリチウム(Li−TFSI)170mgをアセトニトリル1mLに溶解させた溶液37.5μLを加え、さらに4−t−ブチルピリジン17.5μLを添加して、正孔取り出し層塗布液を作製した。この正孔取り出し層塗布液を3000rpmの速度で30秒間スピンコートすることによって、正孔取り出し層を形成した。
有機/無機ハイブリット太陽電池素子に1cm角のメタルマスクを付け、照射光源としてエアマス(AM)1.5G、放射照度100mW/cm2の朝日分光社製SPECTRソーラシミュレータ−IVP0605(商品名)を用いて、FTO電極とAu電極との間の電流−電圧特性を測定した。表3に測定結果として開放電圧(Voc)、短絡電流密度(Jsc)、フィルファクタ(FF)、及び変換効率を示す。
Claims (15)
-
で表される繰り返し単位を有する、請求項1に記載のポリマー。 -
で表される繰り返し単位を有する、請求項1に記載のポリマー。 -
で表される繰り返し単位を有する、請求項1に記載のポリマー。 - 前記ポリマーは、末端基として架橋基を有する、請求項1乃至請求項6のいずれか1項に記載のポリマー。
- 前記R1基は、架橋基である、請求項1乃至請求項3のいずれか1項に記載のポリマー。
- 前記R1基、前記R2基、及び前記R3基からなる群より選ばれる少なくとも1つは、架橋基である、請求項4又は請求項5に記載のポリマー。
- 前記R1基、前記R5基、及び前記R6基からなる群より選ばれる少なくとも1つは、架橋基である、請求項6に記載のポリマー。
- 前記A基は、架橋基を含む、請求項3又は請求項5に記載のポリマー。
- 請求項1乃至請求項6のいずれか1項に記載のポリマーを備える太陽電池。
- 第1の電極と、第2の電極と、前記第1の電極と前記第2の電極との間に配置され、有機材料を含む光電変換層とを具備する太陽電池であって、
前記有機材料は、請求項1乃至請求項6のいずれか1項に記載のポリマーを含む太陽電池。 - 前記光電変換層は、前記ポリマーを含有する活性層を有する、請求項13に記載の太陽電池。
- 前記光電変換層は、前記ポリマーを含有するバッファ層を有する、請求項13に記載の太陽電池。
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