JPWO2015060196A1 - 樹脂材料のエッチング処理用組成物 - Google Patents
樹脂材料のエッチング処理用組成物 Download PDFInfo
- Publication number
- JPWO2015060196A1 JPWO2015060196A1 JP2015507841A JP2015507841A JPWO2015060196A1 JP WO2015060196 A1 JPWO2015060196 A1 JP WO2015060196A1 JP 2015507841 A JP2015507841 A JP 2015507841A JP 2015507841 A JP2015507841 A JP 2015507841A JP WO2015060196 A1 JPWO2015060196 A1 JP WO2015060196A1
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- Prior art keywords
- composition
- etching
- permanganate
- acid
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 179
- 239000000203 mixture Substances 0.000 title claims abstract description 126
- 239000011347 resin Substances 0.000 title claims abstract description 48
- 229920005989 resin Polymers 0.000 title claims abstract description 48
- 239000000463 material Substances 0.000 title claims abstract description 26
- 150000002500 ions Chemical class 0.000 claims abstract description 109
- 239000007864 aqueous solution Substances 0.000 claims abstract description 55
- 239000002253 acid Substances 0.000 claims abstract description 45
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 33
- 229910001437 manganese ion Inorganic materials 0.000 claims abstract description 27
- 239000011777 magnesium Substances 0.000 claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 106
- 238000007747 plating Methods 0.000 claims description 42
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 26
- 238000007772 electroless plating Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 15
- 230000002378 acidificating effect Effects 0.000 claims description 13
- 150000003839 salts Chemical class 0.000 claims description 13
- 239000003054 catalyst Substances 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims description 4
- 159000000003 magnesium salts Chemical class 0.000 claims description 4
- 238000007726 management method Methods 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- -1 magnesium anhydride Chemical class 0.000 abstract description 7
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 30
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 24
- 239000007789 gas Substances 0.000 description 23
- 150000002696 manganese Chemical class 0.000 description 23
- 238000007664 blowing Methods 0.000 description 17
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 150000007522 mineralic acids Chemical class 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 239000011572 manganese Substances 0.000 description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 8
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 description 8
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 8
- 229960005070 ascorbic acid Drugs 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 6
- 229940098779 methanesulfonic acid Drugs 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 235000010323 ascorbic acid Nutrition 0.000 description 5
- 239000011668 ascorbic acid Substances 0.000 description 5
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 5
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004448 titration Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 239000004327 boric acid Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 3
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 3
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 3
- 239000002211 L-ascorbic acid Substances 0.000 description 3
- 235000000069 L-ascorbic acid Nutrition 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 239000004480 active ingredient Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000011656 manganese carbonate Substances 0.000 description 3
- 235000006748 manganese carbonate Nutrition 0.000 description 3
- 229940099596 manganese sulfate Drugs 0.000 description 3
- 239000011702 manganese sulphate Substances 0.000 description 3
- 235000007079 manganese sulphate Nutrition 0.000 description 3
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 230000033116 oxidation-reduction process Effects 0.000 description 3
- RJQRCOMHVBLQIH-UHFFFAOYSA-M pentane-1-sulfonate Chemical compound CCCCCS([O-])(=O)=O RJQRCOMHVBLQIH-UHFFFAOYSA-M 0.000 description 3
- 229940044654 phenolsulfonic acid Drugs 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 3
- KZVLNAGYSAKYMG-UHFFFAOYSA-N pyridine-2-sulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=N1 KZVLNAGYSAKYMG-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002351 wastewater Substances 0.000 description 3
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 2
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 2
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000003287 bathing Methods 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229940093474 manganese carbonate Drugs 0.000 description 2
- 239000011565 manganese chloride Substances 0.000 description 2
- 235000002867 manganese chloride Nutrition 0.000 description 2
- 150000002697 manganese compounds Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- 239000001119 stannous chloride Substances 0.000 description 2
- 235000011150 stannous chloride Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012085 test solution Substances 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 229910017082 Fe-Si Inorganic materials 0.000 description 1
- 229910017133 Fe—Si Inorganic materials 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910001430 chromium ion Inorganic materials 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KPVWDKBJLIDKEP-UHFFFAOYSA-L dihydroxy(dioxo)chromium;sulfuric acid Chemical compound OS(O)(=O)=O.O[Cr](O)(=O)=O KPVWDKBJLIDKEP-UHFFFAOYSA-L 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229940093915 gynecological organic acid Drugs 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 1
- 229940099607 manganese chloride Drugs 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910000357 manganese(II) sulfate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- ZMLDXWLZKKZVSS-UHFFFAOYSA-N palladium tin Chemical compound [Pd].[Sn] ZMLDXWLZKKZVSS-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000008262 pumice Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229940032330 sulfuric acid Drugs 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/14—Chemical modification with acids, their salts or anhydrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1641—Organic substrates, e.g. resin, plastic
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Abstract
Description
項1. 過マンガン酸イオンの濃度が0.2mmol/L以上であって、酸成分を合計濃度として10 mol/L以上含有し、且つ、下記(1)〜(3)の条件の少なくとも一つを満足する水溶液からなる、樹脂材料のエッチング処理用組成物:
(1)有機スルホン酸を1.5 mol/L以上含有すること、
(2)2価マンガンイオンのモル濃度を過マンガン酸イオンのモル濃度に対して15倍以上とすること、
(3)マグネシウム無水塩の添加量を0.1〜1 mol/Lとすること。
項2. 過マンガン酸イオンが、水溶液中において2価のマンガンイオンを電解酸化して形成されたものである、上記項1に記載のエッチング処理用組成物。
項3. 過マンガン酸イオンが、水溶液中に過マンガン酸塩を溶解して形成されたものである、上記項1に記載のエッチング処理用組成物。
項4. 上記項1の(1)の条件を満足する水溶液であって、有機スルホン酸が炭素数1〜5の脂肪族スルホン酸である、上記項1〜3のいずれかに記載のエッチング処理用組成物。
項5. 上記項1の(2)の条件を満足する水溶液であって、該水溶液が、2価マンガンイオンを含む酸性水溶液に過マンガン酸塩を添加して調製されたものである、上記項1に記載のエッチング処理用組成物。
項6. 上記項1の(3)の条件を満足する水溶液であって、マグネシウム無水塩が、無水硫酸マグネシウム、無水塩化マグネシウム、及び無水硝酸マグネシウムからなる群から選ばれた少なくとも一種である、上記項1に記載のエッチング処理用組成物。
項7. 上記項1〜6のいずれかに記載のエッチング処理用組成物を処理対象の樹脂材料の被処理面に接触させることを特徴とする、樹脂材料のエッチング処理方法。
項8. 上記項7の方法によってエッチング処理を行った後、無電解めっき用触媒を付与する工程と無電解めっき処理を行う工程を含む、樹脂材料に対するめっき方法。
項9. 上記項1〜6のいずれかに記載のエッチング処理用組成物の体積増加が生じた場合に、該エッチング処理用組成物を加熱によって濃縮することを特徴とする、エッチング処理用組成物の管理方法。
項10. 上記項1〜6のいずれかに記載のエッチング処理用組成物における過マンガン酸イオン濃度が低下した場合に、該エッチング処理用組成物にオゾンガスを吹き込むことを特徴とする、エッチング処理用組成物の管理方法。
2.0 g/Lアスコルビン酸滴下量(ml)×0.227
以下、本発明のエッチング処理用組成物について、有機スルホン酸の濃度を1.5mol/L以上とする場合、2価マンガンイオンの濃度を過マンガン酸イオン濃度の10倍以上とする場合、及びマグネシウム無水塩の添加量を0.1〜1 mol/Lとする場合のそれぞれについて具体的に説明する。
本発明のエッチング処理用組成物では、過マンガン酸イオン濃度が0.2mmol/L程度以上であって、酸の合計濃度が10 mol/L以上であるという条件を満足した上で、エッチング処理液中における有機スルホン酸の濃度を1.5 mol/L程度以上とすることによって、過マンガン酸イオンの分解を抑制することができる。その結果、樹脂材料に対する良好なエッチング性能を発揮した上で、浴安定性を大きく向上させることが可能となり、長期間安定して優れたエッチング性能を発揮することができる。
本発明のエッチング処理用組成物では、過マンガン酸イオン濃度を0.2mmol/L程度以上、酸成分の濃度を10 mol/L以上とした上で、2価マンガンイオンのモル濃度を過マンガン酸イオンのモル濃度の15倍程度以上とすることによっても、過マンガン酸イオンの分解を抑制できる。その結果、樹脂材料に対する良好なエッチング性能を発揮した上で、浴安定性を大きく向上させることが可能となり、長期間安定して優れたエッチング性能を発揮することができる。
本発明のエッチング処理用組成物では、過マンガン酸イオン濃度を0.2mmol/L程度以上、酸成分の濃度を10 mol/L以上とした上で、マグネシウム無水塩の添加量を0.1〜1 mol/L程度とすることによっても、過マンガン酸イオンの分解を抑制して、浴安定性を向上できる。
本発明のエッチング処理用組成物に添加する酸成分としては、任意の無機酸および有機酸を一種単独又は二種以上混合して用いることができる。無機酸の種類については特に限定的ではなく、例えば、硫酸、塩酸、硝酸、リン酸、フッ化水素酸、ホウ酸などを例示できる。これらの無機酸は、一種単独又は二種以上混合して用いることができる。有機酸としては、特に限定的ではないが、例えば、有機スルホン酸を使用することができる。有機酸の具体例としては、メタンスルホン酸、エタンスルホン酸、プロパンスルホン酸、ペンタンスルホン酸等の炭素数1〜5程度の脂肪族スルホン酸;トルエンスルホン酸、ピリジンスルホン酸、フェノールスルホン酸等の芳香族スルホン酸などを用いることができる。有機スルホン酸は一種単独又は二種以上混合して用いることができる。
本発明のエッチング処理用組成物を用いてエッチング処理を行うには、処理対象物である樹脂材料の被処理面を本発明組成物に接触させればよい。具体的な方法については、特に限定はなく、被処理物の表面を本発明組成物に充分接触させることができる方法であればよい。例えば、本発明組成物を被処理物に噴霧する方法等も適用可能であるが、通常は、本発明組成物中に被処理物を浸漬する方法によれば、効率の良い処理が可能である。浸漬する方法の場合は、エッチング処理用組成物による被処理物界面の酸化反応を促進する目的で空気撹拌やポンプを用いた液流動または被処理物の揺動などを行ってもよい。
上記した方法でエッチング処理を行った後、常法に従って無電解めっき用触媒を付与して、無電解めっき処理を行う。
無電解めっき用触媒の付与方法については、特に限定はなく、パラジウム、銀、ルテニウム等の無電解めっき用触媒を公知の方法に従って付与すればよい。パラジウム触媒の付与方法としては、例えば、いわゆる、センシタイジング−アクチベーティング法、キャタライジング法等と称される方法が代表的な方法である。
無電解めっき液としては、公知の自己触媒型無電解めっき液をいずれも用いることができる。この無電解めっき液としては、無電解ニッケルめっき液、無電解銅めっき液、無電解コバルトめっき液、無電解ニッケル−コバルト合金めっき液、無電解金めっき液等を例示できる。
(1)エッチング処理用組成物を濃縮する方法
本発明のエッチング処理用組成物は、酸成分の濃度が10 mol/L以上であり、浴中の酸濃度が比較的高いために、開放系でエッチング処理を行う場合には大気中の水分を吸収して体積が増大することがある。また、前工程からの水洗水の持込による体積増加も懸念される。エッチング処理用組成物の体積が増大すると、有効成分である過マンガン酸イオン濃度や酸濃度が相対的に減少することになり、結果としてエッチング力の低下を招く場合がある。このため、安定したエッチング性能を維持するために、吸水を抑制し組成物の体積を一定に保つことが好ましい。
本発明のエッチング処理用組成物では、使用に伴って浴中の酸化剤である過マンガン酸イオンが還元されて2価又は4価のマンガンイオンに変化する。過マンガン酸イオン濃度の低下はエッチング力の低下を引き起こす主たる原因となるので、一定の濃度に管理することが好ましい。
(1)エッチング処理用組成物の作製
隔膜を用いて陽極室と陰極室に分離した電解槽を用い、2価のマンガン塩と有機スルホン酸を含む下記表1及び表2に示す組成の水溶液500mLを陽極室に入れ、陰極室に300ml/Lの98%硫酸水溶液250 mLを入れた。
被めっき物として、ABS樹脂(UMG ABS(株)製、商標名:UMG ABS3001M)の平板(10cm×5cm×0.3cm、表面積約1dm2)を用い、以下の方法で無電解めっき皮膜を形成した。
エッチング処理用組成物の状態を建浴後一定時間ごとに目視観察し、液の分解、懸濁および沈殿の有無を調べた。
被めっき物表面の無電解ニッケルめっき皮膜が形成された面積の割合を被覆率として評価した。試験片の全面が被覆された場合を被覆率100%とした。
めっき皮膜の外観を目視で評価した。
無電解めっき皮膜を形成した試験片について、硫酸銅めっき浴を用いて、電流密度3A/dm2、温度25℃で電気めっき処理を120分間行い、銅めっき皮膜を形成した。この様にして得られた試料について、80℃で120分間乾燥させ、室温になるまで放置した後、めっき皮膜に10mm幅の切り目を入れ、引っ張り試験器((株)島津製作所製、オートグラフAGS−J 1kN)を用いて、樹脂に対して垂直にめっき被膜を引っ張り、ピール強度を測定した。
上記した各条件に従って無電解ニッケルめっき皮膜を形成した後、電気めっき法によって、硫酸銅めっきを10〜15μm、ニッケルめっきを10μm及びクロムめっきを0.2〜0.3μm形成して試験片を作製した。これらの各試験片を用いて、−30℃で1時間、室温で30分、+80℃で1時間保持するヒートサイクル試験を3サイクル実施した後、試験片の外観を目視で確認した。評価基準は以下の通りである。
B:クラック発生
C:めっき膨れ発生
−: 評価無し
エッチング処理用組成物として、下記表4及び5に記載の過マンガン酸塩及び有機スルホン酸を含む成分を溶解した水溶液を用いる他は、上記実施例1〜6及び比較例1〜4と同様にして、エッチング処理を行い、無電解めっき皮膜を形成した。各水溶液の具体的な調製方法としては、表4及び5に記載された量の過マンガン酸塩と酸成分を同時に水に添加して溶解させた。尚、表中の過マンガン酸イオン濃度は、各エッチング処理用組成物を作製後、68℃で1時間保持し、過マンガン酸イオン濃度を安定化させた後、測定した値である。
(1)エッチング処理用組成物の作製
下記表7及び表8に示す組成の水溶液を各500mL調製した。具体的な調製方法としては、まず、下記表7及び8に記載された量の酸成分(メタンスルホン酸及び硫酸)と2価マンガン塩(硫酸マンガン及び炭酸マンガン)を水に添加してこれらの成分を含む酸性水溶液を作製した。次いで、この水溶液中に過マンガン酸塩(過マンガン酸カリウム及び過マンガン酸ナトリウム)を各表に示す量で添加した。その後、68℃で1時間保持し安定化させた後にエッチング処理用組成物として使用した。安定化後の浴中過マンガン酸イオン濃度をアスコルビン酸水溶液を用いた酸化還元滴定法によって求めた結果を下記表7及び表8に示す。
(1)エッチング処理用組成物の作製
下記表10に示す組成の水溶液を各500mL調製した。具体的な調製方法としては、まず、下記表10に記載された量の酸成分(メタンスルホン酸及び硫酸)と無水マグネシウム塩(無水硫酸マグネシウム、無水塩化マグネシウム、及び無水硝酸マグネシウム)を水に添加してこれらの成分を含む酸性水溶液を作製した。次いで、この水溶液中に過マンガン酸塩(過マンガン酸カリウム及び過マンガン酸ナトリウム)を各表に示す量で添加した。その後、68℃で1時間保持し安定化させた後にエッチング処理用組成物として使用した。安定化後の浴中過マンガン酸イオン濃度をアスコルビン酸水溶液を用いた酸化還元滴定法によって求めた結果を下記表10に示す。
下記表12に示す各成分の添加量で実施例7〜12と同様の方法でエッチング処理用組成物を調製し、建浴直後の該組成物の比重を測定した。
下記表14に示す各成分の添加量で試験溶液を調製した。
Claims (10)
- 過マンガン酸イオンの濃度が0.2mmol/L以上であって、酸成分を合計濃度として10 mol/L以上含有し、且つ、下記(1)〜(3)の条件の少なくとも一つを満足する水溶液からなる、樹脂材料のエッチング処理用組成物:
(1)有機スルホン酸を1.5 mol/L以上含有すること、
(2)2価マンガンイオンのモル濃度を過マンガン酸イオンのモル濃度に対して15倍以上とすること、
(3)マグネシウム無水塩の添加量を0.1〜1.0mol/Lとすること。 - 過マンガン酸イオンが、水溶液中において2価のマンガンイオンを電解酸化して形成されたものである、請求項1に記載のエッチング処理用組成物。
- 過マンガン酸イオンが、水溶液中に過マンガン酸塩を溶解して形成されたものである、請求項1に記載のエッチング処理用組成物。
- 請求項1の(1)の条件を満足する水溶液であって、有機スルホン酸が炭素数1〜5の脂肪族スルホン酸である、請求項1〜3のいずれかに記載のエッチング処理用組成物。
- 請求項1の(2)の条件を満足する水溶液であって、該水溶液が、2価マンガンイオンを含む酸性水溶液に過マンガン酸塩を添加して調製されたものである、請求項1に記載のエッチング処理用組成物。
- 請求項1の(3)の条件を満足する水溶液であって、マグネシウム無水塩が、無水硫酸マグネシウム、無水塩化マグネシウム、及び無水硝酸マグネシウムからなる群から選ばれた少なくとも一種である、請求項1に記載のエッチング処理用組成物。
- 請求項1〜6のいずれかに記載のエッチング処理用組成物を処理対象の樹脂材料の被処理面に接触させることを特徴とする、樹脂材料のエッチング処理方法。
- 請求項7の方法によってエッチング処理を行った後、無電解めっき用触媒を付与する工程と無電解めっき処理を行う工程を含む、樹脂材料に対するめっき方法。
- 請求項1〜6のいずれかに記載のエッチング処理用組成物の体積増加が生じた場合に、該エッチング処理用組成物を加熱によって濃縮することを特徴とする、エッチング処理用組成物の管理方法。
- 請求項1〜6のいずれかに記載のエッチング処理用組成物における過マンガン酸イオン濃度が低下した場合に、該エッチング処理用組成物にオゾンガスを吹き込むことを特徴とする、エッチング処理用組成物の管理方法。
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Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2937447B1 (en) * | 2012-12-21 | 2018-10-10 | Okuno Chemical Industries Co., Ltd. | Conductive coating film forming bath |
EP3327176B1 (en) | 2013-10-22 | 2019-06-26 | Okuno Chemical Industries Co., Ltd. | Composition for etching treatment of resin material |
EP3070185B1 (en) * | 2014-01-27 | 2024-05-29 | Okuno Chemical Industries Co., Ltd. | Conductive film-forming bath |
CA2956891C (en) * | 2014-08-01 | 2019-08-27 | National Institute Of Advanced Industrial Science And Technology | Water containing permanganate ions and method for producing the same |
US20170088971A1 (en) * | 2015-09-30 | 2017-03-30 | Macdermid Acumen, Inc. | Treatment of Etch Baths |
JPWO2017056285A1 (ja) * | 2015-10-01 | 2018-10-04 | 株式会社Jcu | 樹脂成形体用エッチング液およびその用途 |
EP3181726A1 (en) * | 2015-12-18 | 2017-06-21 | ATOTECH Deutschland GmbH | Etching solution for treating nonconductive plastic surfaces and process for etching nonconductive plastic surfaces |
EP3323910B1 (en) | 2016-11-22 | 2018-11-14 | MacDermid Enthone GmbH | Chromium-free plating-on-plastic etch |
ES2953783T3 (es) * | 2017-05-23 | 2023-11-16 | Okuno Chem Ind Co | Procedimiento de galvanización no electrolítica |
EP3652360A1 (en) * | 2017-07-10 | 2020-05-20 | SRG Global, Inc. | Hexavalent chromium free etch manganese recovery system |
US20190009185A1 (en) * | 2017-07-10 | 2019-01-10 | Srg Global, Inc. | Hexavalent chromium free etch manganese vacuum evaporation system |
US11549903B1 (en) * | 2018-01-18 | 2023-01-10 | National Technology & Engineering Solutions Of Sandia, Llc | Enhanced microfabrication using electrochemical techniques |
WO2020074541A1 (en) * | 2018-10-08 | 2020-04-16 | Degrémont Technologies Ag | Using ozone for manganese* oxidation in etching application |
US10889905B2 (en) * | 2018-12-11 | 2021-01-12 | Rohm And Haas Electronic Materials Llc | Methods of generating manganese (III) ions in mixed aqueous acid solutions using ozone |
JP7336126B2 (ja) * | 2019-03-11 | 2023-08-31 | 国立研究開発法人産業技術総合研究所 | 高価数マンガンの製造方法、及び製造装置 |
KR102572523B1 (ko) * | 2019-10-18 | 2023-08-30 | 주식회사 엘지화학 | 열가소성 수지 조성물, 이의 제조방법, 이를 포함하는 성형품 및 성형품의 제조방법 |
BR112023003111A2 (pt) | 2020-08-25 | 2023-04-04 | Atotech Deutschland Gmbh & Co Kg | Método para metalizar um substrato não metálico e composição de pré-tratamento |
EP4263902A1 (en) * | 2020-12-18 | 2023-10-25 | Atotech Deutschland GmbH & Co. KG | Method for etching at least one surface of a plastic substrate |
EP4105362A1 (en) * | 2021-06-16 | 2022-12-21 | Atotech Deutschland GmbH & Co. KG | Method for oxidizing manganese species in a treatment device and treatment device |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5089476A (ja) | 1973-12-13 | 1975-07-17 | ||
US4592852A (en) | 1984-06-07 | 1986-06-03 | Enthone, Incorporated | Composition and process for treating plastics with alkaline permanganate solutions |
JPS6187899A (ja) | 1984-10-05 | 1986-05-06 | Daikin Ind Ltd | メツキ治具 |
DE3615764A1 (de) | 1986-05-10 | 1987-11-12 | Bayer Ag | Folien aus polykondensaten |
JPH0253967U (ja) | 1988-10-11 | 1990-04-18 | ||
US5110355A (en) | 1990-03-26 | 1992-05-05 | Olin Hunt Sub Iii Corp. | Process for preparing nonconductive substrates |
US5198096A (en) | 1990-11-28 | 1993-03-30 | General Electric Company | Method of preparing polycarbonate surfaces for subsequent plating thereon and improved metal-plated plastic articles made therefrom |
JP3117216B2 (ja) * | 1991-04-26 | 2000-12-11 | ブラスベルグ・オーベルフレヒェンテヒニーク・ゲー・エム・ベー・ハー | 酸化薄層の選択的形成手段 |
JPH05243742A (ja) | 1992-02-28 | 1993-09-21 | Toppan Printing Co Ltd | 多層プリント配線板及びその製造方法 |
JP3246957B2 (ja) | 1992-04-30 | 2002-01-15 | ローム株式会社 | めっき治具 |
JP3709287B2 (ja) | 1998-06-23 | 2005-10-26 | 株式会社日立コミュニケーションテクノロジー | 樹脂のエッチング方法、エッチング装置およびプリント基板 |
AU1243300A (en) | 1998-11-13 | 2000-06-05 | Enthone-Omi Inc | Process for metallizing a plastic surface |
ES2224507T3 (es) | 1998-11-13 | 2005-03-01 | Lpw-Chemie Gmbh | Procedimiento para la metalizacion de una superficie de plastico. |
US6454954B1 (en) | 2000-05-22 | 2002-09-24 | Shipley Company, L.L.C. | Desmear etchant and use thereof |
DE10124631C1 (de) * | 2001-05-18 | 2002-11-21 | Atotech Deutschland Gmbh | Verfahren zum direkten elektrolytischen Metallisieren von elektrisch nichtleiteitenden Substratoberflächen |
JP2003277941A (ja) | 2002-03-26 | 2003-10-02 | Omura Toryo Kk | 無電解めっき方法、および前処理剤 |
JP2004335879A (ja) | 2003-05-09 | 2004-11-25 | Sumitomo Mitsubishi Silicon Corp | 処理液濃度維持方法及び処理液濃度維持装置並びに半導体ウェーハのエッチング方法及びエッチング装置 |
JP4663394B2 (ja) | 2005-05-11 | 2011-04-06 | ダイセルポリマー株式会社 | 難めっき性被覆剤及びめっきの前処理方法 |
CN100510186C (zh) * | 2005-05-27 | 2009-07-08 | 佛山市顺德区汉达精密电子科技有限公司 | 一种退镀液 |
DE102005051632B4 (de) * | 2005-10-28 | 2009-02-19 | Enthone Inc., West Haven | Verfahren zum Beizen von nicht leitenden Substratoberflächen und zur Metallisierung von Kunststoffoberflächen |
US20090176022A1 (en) | 2006-03-31 | 2009-07-09 | Ebara-Udylite Co., Ltd. | Surface modification liquid for plastic and method of metallizing plastic surface therewith |
JP5177426B2 (ja) | 2006-04-18 | 2013-04-03 | 奥野製薬工業株式会社 | 樹脂成形体に対するエッチング処理用組成物 |
EP1870491B1 (de) | 2006-06-22 | 2015-05-27 | Enthone, Inc. | Verbessertes Verfahren zur Direktmetallisierung von elektrisch nicht leitfähigen Substratoberflächen, insbesondere Polyimidoberflächen |
JP4275157B2 (ja) | 2006-07-27 | 2009-06-10 | 荏原ユージライト株式会社 | プラスチック表面の金属化方法 |
JPWO2008132926A1 (ja) | 2007-04-18 | 2010-07-22 | 荏原ユージライト株式会社 | エッチング液およびこれを用いたプラスチック表面の金属化方法 |
US20100155255A1 (en) | 2007-05-22 | 2010-06-24 | Okuno Chemical Industries Co., Ltd. | Pretreatment process for electroless plating of resin molded body, method for plating resin molded body, and pretreatment agent |
JP4849420B2 (ja) | 2007-06-20 | 2012-01-11 | 奥野製薬工業株式会社 | エッチング液の電解処理方法 |
JP5131683B2 (ja) | 2007-07-04 | 2013-01-30 | 奥野製薬工業株式会社 | 樹脂成形体のめっき処理に用いるめっき用治具 |
PL2025708T3 (pl) | 2007-08-10 | 2010-03-31 | Enthone | Roztwór trawiący do powierzchni tworzyw sztucznych nie zawierający chromu |
JP5339023B2 (ja) | 2007-10-09 | 2013-11-13 | 奥野製薬工業株式会社 | スミア除去用組成物 |
JP2009228083A (ja) * | 2008-03-25 | 2009-10-08 | Ebara-Udylite Co Ltd | プラスチック表面への金属めっき方法 |
JP2010121143A (ja) | 2008-11-17 | 2010-06-03 | Okuno Chem Ind Co Ltd | 樹脂成形体に対するエッチングの後処理剤、該後処理剤を用いる後処理方法、及び樹脂成形体に対するめっき方法 |
US9534306B2 (en) * | 2012-01-23 | 2017-01-03 | Macdermid Acumen, Inc. | Electrolytic generation of manganese (III) ions in strong sulfuric acid |
EP2639334A1 (de) * | 2012-03-15 | 2013-09-18 | Atotech Deutschland GmbH | Verfahren zum Metallisieren nichtleitender Kunststoffoberflächen |
ES2556981T3 (es) * | 2012-04-24 | 2016-01-21 | Enthone Inc. | Composición de pre-ataque químico y proceso de ataque químico para sustratos de plástico |
SI2971260T1 (sl) * | 2013-03-12 | 2019-12-31 | Macdermid Acumen, Inc. | Elektrolitsko tvorjenje manganovih (III) ionov v močni žveplovi kislini |
US9267077B2 (en) | 2013-04-16 | 2016-02-23 | Rohm And Haas Electronic Materials Llc | Chrome-free methods of etching organic polymers with mixed acid solutions |
EP3327176B1 (en) * | 2013-10-22 | 2019-06-26 | Okuno Chemical Industries Co., Ltd. | Composition for etching treatment of resin material |
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