JPWO2014076983A1 - 反射防止構造用金型製造方法、及び反射防止構造用金型としての使用方法 - Google Patents
反射防止構造用金型製造方法、及び反射防止構造用金型としての使用方法 Download PDFInfo
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- JPWO2014076983A1 JPWO2014076983A1 JP2014514650A JP2014514650A JPWO2014076983A1 JP WO2014076983 A1 JPWO2014076983 A1 JP WO2014076983A1 JP 2014514650 A JP2014514650 A JP 2014514650A JP 2014514650 A JP2014514650 A JP 2014514650A JP WO2014076983 A1 JPWO2014076983 A1 JP WO2014076983A1
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 57
- 238000005530 etching Methods 0.000 claims abstract description 64
- 239000007789 gas Substances 0.000 claims abstract description 49
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229960000909 sulfur hexafluoride Drugs 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910018503 SF6 Inorganic materials 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 38
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000001020 plasma etching Methods 0.000 claims abstract description 17
- -1 Oxygen ions Chemical class 0.000 claims abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 7
- 239000007769 metal material Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000002265 prevention Effects 0.000 claims description 23
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910001080 W alloy Inorganic materials 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract description 13
- 238000001816 cooling Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021418 black silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0018—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular optical properties, e.g. fluorescent or phosphorescent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
Description
Claims (8)
- 反応性イオンエッチング装置を使用して反射防止構造用金型を製造する反射防止構造用金型製造方法であって、該装置内に、六フッ化硫黄と酸素との混合ガスを導入し、六フッ化硫黄と反応する半導体または金属の材料からなる基材を配置し、該混合ガスをプラズマ化し、該プラズマ中の酸素イオンと六フッ化硫黄に反応した半導体または金属のイオンとを結合させて、該基材の表面のランダムな位置に酸化物を生成させ、該酸化物をエッチング防止マスクとして、六フッ化硫黄によって該基材の表面にエッチングを進行させることにより該基材の表面に、ピッチが0.05マイクロメータから0.35マイクロメータの範囲であり、深さが0.2マイクロメータから1マイクロメータの範囲であり、アスペクト比が0.8以上である微細格子構造を形成する、反射防止構造用金型製造方法。
- 前記基材の材料がシリコンである請求項1に記載の反射防止構造用金型製造方法。
- 前記混合ガスのガス圧が1乃至5パスカルであり、前記混合ガス中の酸素の割居合が30乃至70%である請求項2に記載の反射防止構造用金型製造方法。
- 前記基材の温度を30℃以下とする請求項3に記載の反射防止構造用金型製造方法。
- 前記基材が、金属コアの表面にコーティングされた層である請求項1に記載の反射防止構造用金型製造方法。
- 前記金属が、チタン、タングステン、タンタル、チタンに他の元素を添加したチタン合金、タングステンに他の元素を添加したタングステン合金である請求項1に記載の反射防止構造用金型製造方法。
- 請求項1に記載の方法によって、基材の表面に反射防止用の微細格子構造を形成するステップと、
反射防止用の微細格子構造を形成した該基材の表面に、回折格子のパターンに対応したエッチング防止マスクを形成するステップと、
該エッチング防止マスクを形成した基材のマスクされていない部分に対して、請求項1に記載の方法によってさらにエッチングを進めるステップと、を含む、反射防止用の微細格子構造を備えた回折格子用金型製造方法。 - 反応性イオンエッチング装置内に、六フッ化硫黄と酸素との混合ガスを導入し、六フッ化硫黄と反応する半導体または金属の材料からなる基材を配置し、該混合ガスをプラズマ化し、該プラズマ中の酸素イオンと六フッ化硫黄に反応した半導体または金属のイオンとを結合させて、該基材の表面のランダムな位置に酸化物を生成させ、該酸化物をエッチング防止マスクとして、六フッ化硫黄によって該基材の表面にエッチングを進行させることにより該基材の表面に、ピッチが0.05マイクロメータから0.35マイクロメータの範囲であり、深さが0.2マイクロメータから1マイクロメータの範囲であり、アスペクト比が0.8以上である微細格子構造を形成したものを反射防止構造用金型として使用する方法。
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US201261727284P | 2012-11-16 | 2012-11-16 | |
US61/727,284 | 2012-11-16 | ||
PCT/JP2013/061889 WO2014076983A1 (ja) | 2012-11-16 | 2013-04-23 | 反射防止構造用金型製造方法、及び反射防止構造用金型としての使用方法 |
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JP5584907B1 JP5584907B1 (ja) | 2014-09-10 |
JPWO2014076983A1 true JPWO2014076983A1 (ja) | 2017-01-05 |
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JP (1) | JP5584907B1 (ja) |
DE (1) | DE112013005487B4 (ja) |
WO (1) | WO2014076983A1 (ja) |
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JP6563231B2 (ja) * | 2015-03-31 | 2019-08-21 | デクセリアルズ株式会社 | 原盤の製造方法、光学体の製造方法、光学部材の製造方法、および表示装置の製造方法 |
JP6689576B2 (ja) | 2015-03-31 | 2020-04-28 | デクセリアルズ株式会社 | 原盤の製造方法、原盤、及び光学体 |
DE112015006873B4 (de) | 2015-09-03 | 2023-08-31 | Nalux Co., Ltd. | Form, Verfahren zum Herstellen derselben und Verfahren zum Herstellen geformter Produkte |
US10278785B2 (en) | 2015-12-18 | 2019-05-07 | Novartis Ag | Method of making diverging-light fiber optics illumination delivery system |
WO2019163630A1 (ja) * | 2018-02-21 | 2019-08-29 | ナルックス株式会社 | 金型の製造方法 |
DE112019007446T5 (de) | 2019-06-11 | 2022-03-03 | Nalux Co., Ltd. | Verfahren zur herstellung eines kunststoffelements, das mit feineroberflächenrauigkeit bereitgestellt ist |
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US8187481B1 (en) | 2005-05-05 | 2012-05-29 | Coho Holdings, Llc | Random texture anti-reflection optical surface treatment |
JP4206447B2 (ja) * | 2005-06-03 | 2009-01-14 | ナルックス株式会社 | 微細格子およびその金型 |
TW200717837A (en) * | 2005-06-23 | 2007-05-01 | Shinryo Corp | Method of reducing reflectance of silicon substrate for solar cell and the silicon substrate for solar cell |
WO2007042521A2 (de) | 2005-10-10 | 2007-04-19 | X-Fab Semiconductor Foundries Ag | Herstellung von selbstorganisierten nadelartigen nano-strukturen und ihre recht umfangreichen anwendungen |
DE102006013670A1 (de) | 2006-03-24 | 2007-09-27 | X-Fab Semiconductor Foundries Ag | Breitbandig entspiegelte optische Bauteile mit gekrümmten Oberflächen |
JP2008112036A (ja) * | 2006-10-31 | 2008-05-15 | Osaka Prefecture | 微細構造体の製造方法 |
JP2010013337A (ja) * | 2007-12-05 | 2010-01-21 | Hitachi Maxell Ltd | 表面加工方法、インプリント用モルドの製造方法、光学素子およびインプリント方法 |
WO2012032162A1 (de) | 2010-09-09 | 2012-03-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Verfahren zur reduzierung der grenzflächenreflexion einer glasoberfläche |
JP5423758B2 (ja) * | 2011-09-29 | 2014-02-19 | 王子ホールディングス株式会社 | 単粒子膜および微細構造体 |
JP5548997B2 (ja) * | 2012-03-23 | 2014-07-16 | 独立行政法人産業技術総合研究所 | 微細周期構造を有する炭化ケイ素モールド及びその製造方法 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |