JP6539813B2 - 光学素子の製造方法及び光学素子用成型型の製造方法 - Google Patents
光学素子の製造方法及び光学素子用成型型の製造方法 Download PDFInfo
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- JP6539813B2 JP6539813B2 JP2016185660A JP2016185660A JP6539813B2 JP 6539813 B2 JP6539813 B2 JP 6539813B2 JP 2016185660 A JP2016185660 A JP 2016185660A JP 2016185660 A JP2016185660 A JP 2016185660A JP 6539813 B2 JP6539813 B2 JP 6539813B2
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- substrate
- pitch
- sulfur hexafluoride
- optical element
- etching
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- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 230000003287 optical effect Effects 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 60
- 238000005530 etching Methods 0.000 claims description 57
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 31
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 31
- 229910018503 SF6 Inorganic materials 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 13
- 230000002265 prevention Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- -1 oxygen ions Chemical class 0.000 claims description 2
- CLLOISBGDGWDMZ-UHFFFAOYSA-N [O].FS(F)(F)(F)(F)F Chemical compound [O].FS(F)(F)(F)(F)F CLLOISBGDGWDMZ-UHFFFAOYSA-N 0.000 claims 2
- 238000002834 transmittance Methods 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0273—Diffusing elements; Afocal elements characterized by the use
- G02B5/0294—Diffusing elements; Afocal elements characterized by the use adapted to provide an additional optical effect, e.g. anti-reflection or filter
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
- G02B5/0221—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having an irregular structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
Landscapes
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Surface Treatment Of Optical Elements (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (3)
- 反応性イオンエッチング装置内に、六フッ化硫黄と反応する半導体または金属の材料からなる基材を配置し、六フッ化硫黄と酸素との混合ガスを導入し、高周波電源を使用して実施するプラズマドライエッチングプロセスにおいて、プラズマ中の酸素イオンと、六フッ化硫黄に反応した該基材の材料と、を結合させ、該基材の表面に酸化物を点在させ、該酸化物をエッチング防止マスクとして、六フッ化硫黄によって該基材の表面にエッチングを進行させることにより該基材の表面に微細凹凸構造を形成する、光学素子用成形型の製造方法であって、微細凹凸構造の断面における、隣接する凸部間または隣接する凹部間の基材面に平行な方向の距離の平均値を微細凹凸構造のピッチとして、可視光の範囲から、上限が赤外域の範囲で、エッチング時間または該高周波電源の電力を変えることによって該ピッチを定め、六フッ化硫黄の供給量と酸素の供給量との比を変えることにより、該ピッチと深さとの比を定める光学素子用成形型の製造方法。
- 請求項1の方法によって成形型を製造し、
該成形型を使用して成形によって光学素子を製造する光学素子の製造方法。 - 反応性イオンエッチング装置内に、六フッ化硫黄と反応する半導体の材料からなる基材を配置し、六フッ化硫黄と酸素との混合ガスを導入し、プラズマドライエッチングプロセスにおいて、プラズマ中の酸素イオンと、六フッ化硫黄に反応した該基材の材料と、を結合させ、該基材の表面に該基材の材料の酸化物を点在させ、該酸化物をエッチング防止マスクとして、六フッ化硫黄によって該基材の表面にエッチングを進行させることにより該基材の表面に微細凹凸構造を形成する光学素子の製造方法であって、微細凹凸構造の断面における、隣接する凸部間または隣接する凹部間の基材面に平行な方向の距離の平均値を微細凹凸構造のピッチとして、可視光の範囲から、上限が赤外域の範囲で、エッチング時間または該高周波電源の電力を変えることによって該ピッチを定め、六フッ化硫黄の供給量と酸素の供給量との比を変えることにより、該ピッチと深さとの比を定める光学素子の製造方法。
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US201461968629P | 2014-03-21 | 2014-03-21 | |
US61/968,629 | 2014-03-21 |
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JP2016185660A Active JP6539813B2 (ja) | 2014-03-21 | 2016-09-23 | 光学素子の製造方法及び光学素子用成型型の製造方法 |
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JP2017159573A (ja) * | 2016-03-10 | 2017-09-14 | ナルックス株式会社 | 射出圧縮成形装置及び射出圧縮成形方法 |
JP6993837B2 (ja) * | 2017-10-13 | 2022-02-04 | 株式会社エンプラス | ドライエッチング法による成形型の製造方法 |
JP2019072886A (ja) * | 2017-10-13 | 2019-05-16 | 株式会社エンプラス | ドライエッチング法による成形型の製造方法 |
WO2019211920A1 (ja) * | 2018-04-30 | 2019-11-07 | ナルックス株式会社 | 表面に微細凹凸構造を備えたプラスチック成型品の製造方法 |
JP6611113B1 (ja) * | 2019-06-11 | 2019-11-27 | ナルックス株式会社 | 表面に微細凹凸構造を備えたプラスチック素子の製造方法 |
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JPH09232482A (ja) * | 1996-02-23 | 1997-09-05 | Denso Corp | 半導体の表面処理方法および半導体装置 |
JP2001133772A (ja) * | 1999-11-02 | 2001-05-18 | Hitachi Ltd | 導光板の製造方法、導光板及び液晶表示装置 |
JP2002022911A (ja) * | 2000-07-05 | 2002-01-23 | Nikon Corp | マイクロプリズムアレイの製造方法および型材 |
JP2005303255A (ja) * | 2004-03-17 | 2005-10-27 | Shinryo Corp | 太陽電池用シリコン基板の低反射率加工方法 |
WO2006129514A1 (ja) | 2005-06-03 | 2006-12-07 | Nalux Co., Ltd. | 微細格子およびその金型 |
EP1935035A2 (de) | 2005-10-10 | 2008-06-25 | X-FAB Semiconductor Foundries AG | Herstellung von selbstorganisierten nadelartigen nano-strukturen und ihre recht umfangreichen anwendungen |
DE102006013670A1 (de) | 2006-03-24 | 2007-09-27 | X-Fab Semiconductor Foundries Ag | Breitbandig entspiegelte optische Bauteile mit gekrümmten Oberflächen |
JP4986137B2 (ja) | 2006-12-13 | 2012-07-25 | 独立行政法人産業技術総合研究所 | ナノ構造体を有する光学素子用又はナノ構造体用成形型の製造方法 |
JP2009128543A (ja) * | 2007-11-21 | 2009-06-11 | Panasonic Corp | 反射防止構造体の製造方法 |
JP5010445B2 (ja) * | 2007-11-29 | 2012-08-29 | パナソニック株式会社 | マイクロレンズアレイ用金型の製造方法 |
JP5333444B2 (ja) * | 2008-04-08 | 2013-11-06 | 株式会社ニコン | 光学素子、光学装置、光源装置 |
JP4596072B2 (ja) * | 2008-12-26 | 2010-12-08 | ソニー株式会社 | 微細加工体の製造方法、およびエッチング装置 |
FR2949276B1 (fr) * | 2009-08-24 | 2012-04-06 | Ecole Polytech | Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire |
JP5423758B2 (ja) * | 2011-09-29 | 2014-02-19 | 王子ホールディングス株式会社 | 単粒子膜および微細構造体 |
JP2014051710A (ja) | 2012-09-07 | 2014-03-20 | Mitsubishi Rayon Co Ltd | 陽極酸化ポーラスアルミナの製造方法、モールドの製造方法および微細凹凸構造を表面に有する成形体 |
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- 2015-02-19 JP JP2015030437A patent/JP6074560B2/ja active Active
- 2015-03-17 DE DE102015103931.1A patent/DE102015103931B4/de active Active
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- 2016-09-23 JP JP2016185660A patent/JP6539813B2/ja active Active
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DE102015103931A1 (de) | 2015-09-24 |
JP2016221980A (ja) | 2016-12-28 |
JP6074560B2 (ja) | 2017-02-08 |
JP2015182465A (ja) | 2015-10-22 |
DE102015103931B4 (de) | 2022-06-30 |
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