JPWO2014038579A1 - 含フッ素化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法、化合物 - Google Patents
含フッ素化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法、化合物 Download PDFInfo
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- JPWO2014038579A1 JPWO2014038579A1 JP2014534383A JP2014534383A JPWO2014038579A1 JP WO2014038579 A1 JPWO2014038579 A1 JP WO2014038579A1 JP 2014534383 A JP2014534383 A JP 2014534383A JP 2014534383 A JP2014534383 A JP 2014534383A JP WO2014038579 A1 JPWO2014038579 A1 JP WO2014038579A1
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- LSACYLWPPQLVSM-UHFFFAOYSA-N isobutyric acid anhydride Chemical compound CC(C)C(=O)OC(=O)C(C)C LSACYLWPPQLVSM-UHFFFAOYSA-N 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
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- 239000004814 polyurethane Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C07C205/27—Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by etherified hydroxy groups
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- C07C205/36—Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by etherified hydroxy groups having nitro groups and etherified hydroxy groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton to carbon atoms of the same non-condensed six-membered aromatic ring or to carbon atoms of six-membered aromatic rings being part of the same condensed ring system
- C07C205/37—Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by etherified hydroxy groups having nitro groups and etherified hydroxy groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton to carbon atoms of the same non-condensed six-membered aromatic ring or to carbon atoms of six-membered aromatic rings being part of the same condensed ring system the oxygen atom of at least one of the etherified hydroxy groups being further bound to an acyclic carbon atom
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- C07C205/00—Compounds containing nitro groups bound to a carbon skeleton
- C07C205/45—Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by at least one doubly—bound oxygen atom, not being part of a —CHO group
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- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C205/00—Compounds containing nitro groups bound to a carbon skeleton
- C07C205/49—Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups
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- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
Description
本願は、2012年9月4日に出願された日本国特願2012−194531号に基づき優先権を主張し、その内容をここに援用する。
基板上の表面特性の違いを利用したパターン形成方法としては、たとえば、基板上に親水領域と撥水領域とを形成し、機能性材料の水溶液を親水性領域に塗布する方法がある。
この方法では、親水領域でのみ機能性材料の水溶液が濡れ広がる。そのため、機能性材料の薄膜パターンを形成することができる。
本発明の第一の態様は、下記一般式(1)で表されることを特徴とする含フッ素化合物である。
本発明の第五の態様は、下記一般式(f)で表される化合物である。
本発明の含フッ素化合物は、本発明の第五〜八の態様の化合物を原料(中間体)として製造することが好ましい。
本発明の第八の態様の化合物は、例えば、以下の工程により得ることができる。
本発明の第七の態様の化合物は、例えば、以下の工程により得ることができる。
本発明の第六の態様の化合物は、例えば、以下の工程により得ることができる。
本発明の第五の態様の化合物は、例えば、以下の工程により得ることができる。
本発明の第1の態様の含フッ素化合物は、トリメトキシシランと化合物(f)を反応させることにより得られる。以下の工程は、触媒を用いて行うことが好ましく、白金−カルボニルビニルメチル錯体(Ossko触媒)、白金−ジビニルテトラメチルジシロキサン錯体(カーステッド触媒)等を用いることができる。
本発明の第二の態様は、前記含フッ素化合物で化学修飾された表面を有するパターン形成用基板である。
本発明の第三の態様は、前記含フッ素化合物からなる光分解性カップリング剤である。
本発明の態様の光分解性カップリング剤は、撥液基を備えた光分解性基と、この光分解性基に官能基を介して連結された付着基Xとを備える。前記撥液基は、その末端にフッ素化アルコキシ鎖Rf1、Rf2を有する。前記官能基は、光分解後にカルボキシ基を残基とする。そのため、本発明の光分解性カップリング剤は、光照射前後での接触角の差を大きく確保することができる。すなわち、この光分解性カップリング剤を配した面において、濡れ性(撥液性/親水性)が大きく変化し、光照射前の面における液体(例えば水)の接触角(液滴の接線と面とのなす角度)と、光照射後の面における液体の接触角との間に比較的大きい差分値を設けることができる。
本発明の第四の態様は、対象物の被処理面にパターンを形成するパターン形成方法であって、前記第一の態様の含フッ素化合物を用いて、前記被処理面を化学修飾する第1の工程と、化学修飾された前記被処理面に所定パターンの光を照射して、親水領域及び撥水領域からなる潜像を生成する第2の工程と、前記親水領域又は撥水領域にパターン形成材料を配置する第3の工程と、を含むパターン形成方法である。
対象物の被処理面にパターンを形成するパターン形成方法における第1の工程は、前記第一の態様の含フッ素化合物を用いて、前記被処理面を化学修飾する工程である。
第2の工程は、化学修飾された被処理面に所定パターンの光を照射して、親水領域及び撥水領域からなる潜像を生成する工程である。
また、単色光が得られるレーザー以外の光源としては、広帯域の線スペクトル、連続スペクトルをバンドパスフィルター、カットオフフィルター等の光学フィルターを使用して取出した特定波長の光を使用してもよい。一度に大きな面積を照射することができることから、光源としては高圧水銀ランプまたは超高圧水銀ランプが好ましい。
本発明のパターン形成方法においては、上記の範囲で任意に光を被処理面に照射することができる。しかし、特に回路パターンに対応した分布の光エネルギーを被処理面に照射することが好ましい。
第3の工程は、第2の工程で生成した親水領域又は撥水領域にパターン形成材料を配置する工程である。
本発明の態様のパターン形成方法において、いわゆるロール・ツー・ロールプロセスに対応する可撓性の基板を用いる場合には、図3に示すような、ロール・ツー・ロール装置である基板処理装置100を用いてパターンを形成してもよい。図3に基板処理装置100の構成を示す。
この基板処理装置100は、基板S上に例えば有機EL素子、液晶表示素子等の表示素子(電子デバイス)を形成する場合に好適に用いることができる。
また、上記可撓性は、前記基板の材質、大きさ、厚さ、又は温度などの環境、等に応じて変わる。なお、基板Sとしては、1枚の帯状の基板を用いても構わないし、複数の単位基板を接続して帯状に形成される構成としても構わない。
また、光分解性基の近傍に、炭素数3〜5の分岐鎖状のアルキル基を有することにより、少ないエネルギー(露光量)で撥水性能を有する基が解離させることができると考えられる。
100mLのナスフラスコに1,2−ジメトキシベンゼンを9.02g(65.4mmol)とヨウ素結晶を0.311g(2.45mmol)と、イソ酪酸無水物を20.7g(131mmol)とを入れ、このナスフラスコを170℃で6時間還流し、ナスフラスコ内を室温に戻して31時間撹拌した。その後、ナスフラスコ内にH2Oを80mL加え、ジエチルエーテル(80mL×3)で有機層を抽出した。抽出した有機層を5%NaHCO3(80mL)、飽和食塩水(80mL)、H2O(80mL)で洗浄し、無水MgSO4で乾燥、ろ過、濃縮した。その後、カラムクロマトグラフィー(ヘキサン:酢酸エチル=4:1)により上記処理を施した有機層を単離精製し、濃縮、真空乾燥を行い、淡黄色の粘体である化合物(a)(1−(3,4−ジメトキシフェニル)−2−メチル−1−プロパノン)を得た。
収量 3.90g(18.7mmol,29%)
Rf 0.27(ヘキサン:酢酸エチル=4:1)
1H−NMR(CDCl3/TMS)400MHz
δ=1.22(6H,d,J=6.8Hz)(CH3)2
=3.55(1H,sep,J=6.8Hz)(CH3)2
=3.94and3.95(6H,s,s) Ar−OCH3×2
=6.90(1H,d,J=8.4Hz) Ar−H
=7.55(1H,d,J=2.0Hz) Ar−H
=7.60(1H,d,d,J=8.4Hz) Ar−H
IR(NaCl)
1674cm−1 (C=O)
収量1.50g(ヘキサン:酢酸エチル=2:1)
Rf 0.20(ヘキサン:酢酸エチル=2:1)
1H−NMR(CDCl3/TMS)400MHz
δ=1.21(6H,d,J=6.8Hz)(CH3)2
=3.53(1H,sep,J=6.9Hz)−CH
=6.35(1H,s) Ar−OH
=6.94(1H,d,J=8.4Hz) Ar−H
=7.39(1H,s) Ar−OH
=7.52(1H,d,d,J=8.4Hz) Ar−H
=7.83(1H,d,J=2.0Hz) Ar−H
IR(NaCl)
3349cm−1 (OH)
1656cm−1 (C=O)
収量 3.62g(5.17mmol,91%)
Rf 0.73(ヘキサン:酢酸エチル=2:1)
1H−NMR(CDCl3/TMS)400MHz
δ=1.21(6H,d,J=6.8Hz) (CH3)2
=2.15〜2.19(4H,m)−O−CH2−CH2−CH2−CF2−×2
=2.32〜2.34(4H,m)−O−CH2−CH2−CH2−CF2−×2
=3.53(1H,sep,J=6.9Hz) −CH−
=4.13and4.14(4H,t,t)−O−CH2−CH2−CH2−CF2−×2
=6.88(1H,d,J=8.5Hz) Ar−H
=7.52(1H,d,J=2.0Hz) Ar−H
=7.58(1H,dd,J=8.4Hz) Ar−H
IR(KBr)
722cm−1 (CF3)
1226cm−1 (CF2, CF3)
1678cm−1 (C=O)
収量 0.256g(3.43mmol,48%)
Rf 0.40(ヘキサン:酢酸エチル=6:1)
1H−NMR(CDCl3/TMS)400MHz
δ=1.21(6H,d,J=6.8Hz) (CH3)2
=2.15〜2.23(4H,m)−O−CH2−CH2−CH2−CF2−×2
=2.27〜2.34(4H,m)−O−CH2−CH2−CH2−CF2−×2
=2.89(1H,sep) −CH−
=4.16and4.17(4H,t,t) −O−CH2−CH2−CH2−CF2−×2
=6.67 (1H,s) Ar−H
=7.64 (1H,s) Ar−H
IR (KBr)
721cm−1 (CF3)
1228cm−1 (CF2, CF3)
1358and1523cm−1 (NO2)
1703cm−1 (C=O)
収量 2.17g(2.90mmol,76%)
Rf 0.20(ヘキサン:酢酸エチル=6:1)
1H−NMR(CDCl3/TMS)400MHz
δ=0.94and 0.96(6H,d,J=6.8Hz) (CH3)2
=1.97〜2.03(1H,m) −CH−
=2.14〜2.21(5H,m)−O−CH2−CH2−CH2−CF2−×2
Ar−CH−OH
=2.27〜2.40(4H,m)−O−CH2−CH2−CH2−CF2−×2
=4.08〜4.23(4H,m)−O−CH2−CH2−CH2−CF2−×2
=5.27(1H,t,J=4.8Hz) Ar−CH−CH−(CH3)2
=7.20(1H,s) Ar−H
=7.55 (1H,s) Ar−H
IR (KBr)
742cm−1 (CF3)
1228cm−1 (CF2, CF3)
1334and1522cm−1 (NO2)
3547cm−1 (OH)
収量 2.13g(2.57mmol,92%)
Rf 0.40(ヘキサン:酢酸エチル=8:1)
1H−NMR(CDCl3/TMS)400MHz
δ=0.98and 1.00(6H,d,J=6.8Hz) (CH3)2
=2.13〜2.21(5H,m)−O−CH2−CH2−CH2−CF2−×2
−CH−(CH3)2
=2.26〜2.52(8H,m)−O−CH2−CH2−CH2−CF2−×2
−CH2−CH2−COO−
=4.10〜4.15(4H,m)−O−CH2−CH2−CH2−CF2−×2
=4.98〜5.06 (2H,m) CH2=CH−
=5.74〜5.84 (1H,m) CH2=CH−
=6.31(1H,d,J=5.8 Hz) Ar−CH−CH−(CH3)2
=6.87(1H,s) Ar−H
=7.57(1H,s) Ar−H
IR (KBr)
720cm−1 (CF3)
122cm−1 (CF2,CF3)
1332 and 1525cm−1 (NO2)
1732cm−1 (C=O)
収量 0.775g(0.814mmol,67%)
Rf 0.23(ヘキサン:酢酸エチル=8:1)
1H−NMR(CDCl3/TMS)400MHz
δ=0.61〜0.67(2H,m) −CH2−
=0.97 and0.99(6H,d,J=6.8Hz)−(CH3)2
=1.39〜1.47 (2H, m) −Si−CH2−CH2−
=1.66(2H,quint,J=7.6Hz)−CH2−CH2−COO−
=2.12〜2.21(5H,m)−O−CH2−CH2−CH2−CF2−×2
−CH−(CH3)2
=2.26〜2.39(6H,m)−O−CH2−CH2−CH2−CF2−×2
−CH2−COO−
=3.55 (9H,s) (CH3O)3−Si−
=4.08〜4.17(4H,m)−O−CH2−CH2−CH2−CF2−×2
=6.30 (1H,d,J=5.8Hz)Ar−CH−CH−(CH3)2
=6.87 (1H, s) Ar−H
=7.57 (1H, s) Ar−H
IR (KBr)
720cm−1 (CF3)
1227cm−1 (CF2,CF3)
1332 and 1525cm−1 (NO2)
1729cm−1 (C=O)
100mLのナスフラスコに1,2−ジメトキシベンゼンを10.1g(72.4mmol)とヨウ素結晶を0.553g(4.36 mmol)、ピバル酸無水物20.4g(109mmol)を入れ、ナスフラスコ内を170℃で9時間、100℃で17時間還流した。その後、ナスフラスコ内にH2O(80mL)を加え、ジエチルエーテル(80mL×3)で有機層を抽出した。抽出した有機層を5%炭酸水素ナトリウム水溶液(80mL)、飽和食塩水(80mL×2)、H2O(80mL×3)で洗浄し、無水MgSO4で乾燥、ろ過、濃縮した。カラムクロマトグラフィー(ヘキサン:酢酸エチル=4:1)により上記処理を施した有機層を単離精製し、濃縮、真空乾燥を行い、淡黄色の粘体である化合物(a1)(1−(3,4−ジメトキシフェニル)−2,2−ジメチル−1−プロパノン)を得た。
収量 3.89g(17.4mmol,24%)
Rf 0.33(ヘキサン:酢酸エチル=4:1)
1H−NMR(CDCl3/TMS)400MHz
δ = 1.39 (9H, s)(CH3)3
= 3.92 and 3.93(6H, s ,s)Ar−OCH3 ×2
= 6.90(1H, d, J = 8.4 Hz)Ar−H
= 7.55 (1H, d, J = 2.0 Hz)Ar−H
= 7.60 (1H, d, J = 8.4 Hz)Ar−H
IR (NaCl)
1663 cm−1 (C=O)
収量 2.12g(10.9mmol,81%)
Rf 0.33 (ヘキサン:酢酸エチル=2:1)
1H−NMR (CDCl3 / TMS) 400 MHz
δ = 1.39 (9H, s)(CH3)3
= 6.27 (1H, s)Ar−OH
= 6.88 (1H, d, J = 8.4 Hz)Ar−H
= 7.25 (1H, s)Ar−OH
= 7.47 (1H, d, J = 8.4 Hz)Ar−H
= 7.68 (1H, d, J = 2.1 Hz)Ar−H
IR (KBr)
3321 cm−1 (OH)
1642 cm−1 (C=O)
収量 4.99 g (6.98 mmol, 78%)
Rf 0.78 (ヘキサン : 酢酸エチル = 2 : 1)
1H−NMR (CDCl3 / TMS) 400 MHz
δ = 1.38 (9H, s)(CH3)3
= 2.10 〜 2.19(4H, m)−O−CH2−CH2−CH2−CF2− ×2
= 2.27 〜 2.40(4H, m)−O−CH2−CH2−CH2−CF2− ×2
= 4.10 and 4.12(4H, t, t)−O−CH2−CH2−CH2−CF2− ×2
= 6.83 (1H, d, J = 8.6 Hz)Ar−H
= 7.40 (1H, d, J = 2.0 Hz)Ar−H
= 7.53 (1H, d, J = 8.5 Hz)Ar−H
IR (KBr)
721 cm−1 (CF3)
1228 cm−1 (CF2, CF3)
1669 cm−1 (C=O)
収量 1.72 g (2.25 mmol, 35%)
Rf 0.17 (ヘキサン : 酢酸エチル= 6 : 1)
1H−NMR (CDCl3 / TMS) 400 MHz
δ = 0.892(9H, s)−C−(CH3)3
= 2.03 (1H, d, J = 3.9 Hz )Ar−CH−OH
= 2.17〜2.20(4H, m)−O−CH2−CH2−CH2−CF2− ×2
= 2.27〜2.39(4H, m)−O−CH2−CH2−CH2−CF2− ×2
= 4.09〜4.22(4H, m)−O−CH2−CH2−CH2−CF2− ×2
= 5.61(1H, d, J = 3.8 Hz )Ar−CH−C−(CH3)3
= 7.22 (1H, s)Ar−H
= 7.43 (1H, s)Ar−H
sIR (NaCl)
721 cm−1 (CF3)
1228 cm−1 (CF2, CF3)
1335 and 1516 cm−1 (NO2)
3456 cm−1 (OH)
収量 1.23 g (1.45 mmol, 92%)
Rf 0.60 (ヘキサン : 酢酸エチル = 6 : 1)
1H−NMR (CDCl3 / TMS) 400 MHz
δ = 0.958(9H, s)(CH3)3
= 2.13 〜 2.21(4H, m)−O−CH2−CH2−CH2−CF2− ×2
= 2.26 〜 2.54(8H, m)−O−CH2−CH2−CH2−CF2− ×2
−CH2−CH2−COO−
= 4.10 〜 4.15(4H, m)−O−CH2−CH2−CH2−CF2− ×2
= 4.98 〜 5.07(2H, m)CH2=CH−
= 5.75 〜 5.85(1H, m)CH2=CH−
= 6.64 (1H, s) Ar−CH−C−(CH3)3
= 6.89 (1H, s) Ar−H
= 7.54 (1H, s) Ar−H
IR (KBr)
720 cm−1 (CF3)
1225 cm−1 (CF2, CF3)
1339 and 1526 cm−1 (NO2)
1732 cm−1 (C=O)
収量 0.775 g (0.814 mmol, 67 %)
Rf 0.20 (ヘキサン : 酢酸エチル : テトラメトキシシラン = 8 : 1 : 0.09)
1H−NMR (CDCl3 / TMS) 400 MHz
δ = 0.620 〜 0.661(2H, m) −Si−CH2−
= 0.959(9H, s)(CH3)3
= 1.42 〜 1.49(2H, m)−Si−CH2−CH2−
= 1.68 (2H, quint, J = 7.6 Hz)−CH2−CH2−COO−
= 2.14 〜 2.21(4H, m)−O−CH2−CH2−CH2−CF2−×2
= 2.23 〜 2.41(6H, m)−O−CH2−CH2−CH2−CF2−×2
−CH2−COO−
= 3.55(9H, s)(CH3O)3−Si−
= 4.10 〜 4.13(4H, m)−O−CH2−CH2−CH2−CF2−×2
= 6.63 (1H, s)Ar−CH−C−(CH3)3
= 6.90 (1H, s)Ar−H
= 7.54(1H, s)Ar−H
IR (KBr)
720 cm−1 (CF3)
1228 cm−1 (CF2, CF3)
1338 and 1528 cm−1 (NO2)
1729 cm−1 (C=O)
シリコンウェハ(3cm×1.5cm)を4枚、シリコンウェハ(2cm×1cm)を2枚、石英ガラス(4cm×1cm)を1枚、それぞれピラニア溶液またはUV−オゾンクリーナーにより前処理を行った。
50mLナスフラスコにH2SO4:H2O2=7:3(14mL:6mL)の混合溶液を調整し、シリコンウェハ(2cm×1cm)2枚を裏合わせで入れ、ナスフラスコ内を1時間オイルバスで100℃に加熱した。その後、シリコンウェハ2枚を純水で洗い流し、ナスフラスコ内に純水を入れて超音波洗浄を10分間行い、シリコンウェハを窒素気流で乾燥させた。
シリコンウェハ、石英ガラスをメタノール、水、アセトンでそれぞれ5分間超音波洗浄した。基板を取り出し窒素気流で乾燥させ、UVオゾンクリーナーで前処理した。UV−オゾンクリーナーの酸素注入は、流量6L/minで3分間注入し、UV照射は1.5時間とした。生じたオゾンは、窒素を流量6L/minで10分間流して排出した。石英ガラスは基板の両面を均等に処理するために、基板を裏返してUV−オゾンによる洗浄を二回行った。
50mLナスフラスコにドライトルエン40mLと、含フッ素化合物(1)38.1mg(40.0μmol)を入れ、ナスフラスコ内で1mMの溶液を調製した。この溶液をもう一つの50mLナスフラスコに20mL移した。前処理済みのシリコンウェハと石英ガラスを二つのナスフラスコに分けて入れ、窒素下でそれぞれのシリコンウェハと石英ガラスを3時間還流した。ナスフラスコから基板を取り出しメタノールで洗い、試料瓶にメタノールと基板を入れ、超音波洗浄(10分)を行った。さらに基板をクロロホルムで洗い、試料瓶にクロロホルムと基板を入れ、超音波洗浄(10分)を行った。基板の表面を窒素で乾燥させ、接触角を測定した。接触角の測定後、基板の表面を窒素で乾燥し、基板を試料瓶に入れ、窒素を試料瓶に充填して基板を保存した。下記表1に表面修飾後の基板の接触角を示す。
なお、下記表1中、No.7とNo.8は、一枚の基板の表面(No.7)と裏面(No.8)の結果を示す。
50mLナスフラスコにドライトルエン40mL、含フッ素化合物(2)を38.6mg(40.0μmol)を入れ、ナスフラスコ内で1mMの溶液を調製した。この溶液をもう一つの50mLナスフラスコに20mL移した。前処理済みのシリコンウェハと石英ガラスを二つのナスフスコに分けて入れ、窒素雰囲気下でそれぞれのシリコンウェハと石英ガラスを3時間浸漬した。ナスフラスコ内から基板を取り出しメタノールで洗い、試料瓶にメタノールと基板を入れ、超音波洗浄(10分)を行った。さらに基板をクロロホルムで洗い、試料瓶にクロロホルムと基板を入れ、超音波洗浄(10分)行った。基板の表面を窒素で乾燥させ、接触角を測定した。下記表2に表面修飾後の基板の接触角を示す。
なお、下記表2中、No.9とNo.10は、一枚の基板の表面(No.9)と裏面(No.10)の結果を示す。
照度計で50mW/cm2の位置を探し、そこにUV−オゾンによる前処理を行い、表面修飾をした基板を置いた。波長320nm以上の光を、超高圧水銀灯を用いて照射した。
光照射された後の修飾基板をメタノールで洗い流し、続いてクロロホルムで同様に洗い流した。試料瓶に修飾基板とクロロホルムを入れ、超音波洗浄(10分)を行った。ピンセットで修飾基板を取り出し、修飾基板の表面を窒素気流で乾燥させ、接触角を測定した。その結果を表3に示す。
UV−オゾンクリーナーを用いて前処理したシリコンウェハを含フッ素化合物(1)で修飾した基板の露光前後(露光量:18J/cm2)のX線光電子スペクトル(XPS)を測定した。シリコンウェハのSi−Si結合のピーク面積の値を1とし、それぞれの元素の面積をそれぞれの感度で割った相対強度の値を表4に示す。
Claims (13)
- 前記R1が、イソプロピル基、イソブチル基又はtert―ブチル基である
請求項1に記載の含フッ素化合物。 - 前記Rf1又はRf2が、炭素数5以上のフッ素化アルコキシ基である
請求項1又は2に記載の含フッ素化合物。 - 請求項1〜3のいずれか一項に記載の含フッ素化合物で化学修飾された表面を有する
パターン形成用基板。 - 請求項1〜3のいずれか一項に記載の含フッ素化合物からなることを特徴とする
光分解性カップリング剤。 - 対象物の被処理面にパターンを形成するパターン形成方法であって、
請求項1〜3のいずれか一項に記載の含フッ素化合物を用いて、前記被処理面を化学修飾する第1の工程と、
化学修飾された前記被処理面に所定パターンの光を照射して、親水領域及び撥水領域からなる潜像を生成する第2の工程と、
前記親水領域又は撥水領域にパターン形成材料を配置する第3の工程と、
を含むパターン形成方法。 - 可撓性の基板の上に電子デバイス用の回路パターンを形成する方法であって、
前記基板の表面の全体、または特定の領域内を、請求項1〜3のいずれか一項に記載の含フッ素化合物を用いて化学修飾する第1の工程と、
前記化学修飾された前記基板の表面に、前記回路パターンに対応した分布の光エネルギーを照射することによって、前記基板の表面に、親撥水性の違いによる前記回路パターンの潜像を生成する第2の工程と、
前記基板の表面の前記潜像の部分に流動性のパターン形成材料を接触させ、前記親撥水性の違いによって前記パターン形成材料を前記回路パターンの形状で前記基板上に捕捉させる第3の工程と、
を含むパターン形成方法。 - 前記パターン形成材料は、液状の導電材料、液状の半導体材料、又は液状の絶縁材料を含む
請求項6または7に記載のパターン形成方法。 - 前記光は波長が200nm〜450nmの範囲に含まれる光を含む
請求項6〜8のいずれか一項に記載のパターン形成方法。
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JP6320392B2 (ja) * | 2013-08-27 | 2018-05-09 | 学校法人神奈川大学 | 含フッ素化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法、化合物 |
JP6832727B2 (ja) * | 2017-01-31 | 2021-02-24 | 株式会社ニコン | 化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法 |
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JP2006276643A (ja) * | 2005-03-30 | 2006-10-12 | Fuji Photo Film Co Ltd | 位相差膜、液晶表示装置および化合物 |
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JP6320392B2 (ja) * | 2013-08-27 | 2018-05-09 | 学校法人神奈川大学 | 含フッ素化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法、化合物 |
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JP2007186472A (ja) * | 2006-01-16 | 2007-07-26 | Univ Kanagawa | 光分解性カップリング剤 |
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