JPWO2013140740A1 - Iv変換器およびこのiv変換器を用いた慣性力センサ - Google Patents
Iv変換器およびこのiv変換器を用いた慣性力センサ Download PDFInfo
- Publication number
- JPWO2013140740A1 JPWO2013140740A1 JP2014506001A JP2014506001A JPWO2013140740A1 JP WO2013140740 A1 JPWO2013140740 A1 JP WO2013140740A1 JP 2014506001 A JP2014506001 A JP 2014506001A JP 2014506001 A JP2014506001 A JP 2014506001A JP WO2013140740 A1 JPWO2013140740 A1 JP WO2013140740A1
- Authority
- JP
- Japan
- Prior art keywords
- operational amplifier
- input terminal
- output
- output terminal
- converter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 40
- 230000003321 amplification Effects 0.000 claims description 14
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000001360 synchronised effect Effects 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5614—Signal processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/802—Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/261—Amplifier which being suitable for instrumentation applications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45032—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are multiple paralleled transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45116—Feedback coupled to the input of the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Signal Processing (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Gyroscopes (AREA)
- Amplifiers (AREA)
Abstract
Description
N=Vn×(RωC+1) …(式1)
式1に示すように、ノイズ量Nは容量成分2の容量値Cに比例して大きくなる。従って、IV変換器1の信号Sとノイズ量Nの比(以下、S/N比)は、容量成分2の容量値Cに大きく依存する。
11 オペアンプ(第1のオペアンプ)
12 オペアンプ(第2のオペアンプ)
13 容量成分
14 入力端子(第1の入力端子)
15 入力端子(第2の入力端子)
16,22 帰還ループ
17 出力端子(第1の出力端子)
18 出力端子(第2の出力端子)
19 入力端子(第3の入力端子)
20 入力端子(第4の入力端子)
21 インピーダンス素子
23 出力端子(第3の出力端子)
24 差動増幅回路
25 増幅回路(第1の増幅回路)
26 増幅回路(第2の増幅回路)
Claims (6)
- 容量成分に流れる電流を電圧に変換できるIV変換器であって、
前記容量成分に接続されるように構成された第1のオペアンプと、
前記第1のオペアンプに接続された第2のオペアンプと、
前記第2のオペアンプに接続されたインピーダンス素子と、
を備え、
前記第1のオペアンプは、
前記容量成分に接続されるように構成された第1の入力端子と、
基準電位に接続された第2の入力端子と、
前記第1の入力端子に接続されることにより帰還ループを構成する第1の出力端子と、
第2の出力端子と、
を有し、
前記第2のオペアンプは、
前記第2の出力端子に接続された第3の入力端子と、
基準電位に接続された第4の入力端子と、
前記インピーダンス素子を介して前記第3の入力端子に接続されることにより帰還ループを構成する第3の出力端子と、
を有し、
前記第1のオペアンプの前記第2の出力端子が出力する電流の位相は前記第1のオペアンプの前記第1の出力端子が出力する電流の位相と略等しい、IV変換器。 - 前記第1のオペアンプの前記第2の出力端子が出力する前記電流の振幅は前記第1のオペアンプの前記第1の出力端子が出力する前記電流の振幅と略等しい、請求項1に記載のIV変換器。
- 前記第1のオペアンプは、
前記第1の入力端子の電圧と前記第2の入力端子の電圧との差分を増幅する差動増幅回路と、
前記差動増幅回路の出力を増幅し、前記第1の出力端子に出力する第1の増幅回路と、
前記差動増幅回路の出力を増幅し、前記第2の出力端子に出力する第2の増幅回路と、
をさらに有する、請求項1に記載のIV変換器。 - 前記第1の増幅回路の増幅率と前記第2の増幅回路の増幅率とは略等しい、請求項3に記載のIV変換器。
- 前記第1のオペアンプは、
前記第1の入力端子の電圧と前記第2の入力端子の電圧との差分の電圧を増幅する差動増幅回路と、
前記差動増幅回路の出力を増幅し、前記第1の出力端子および前記第2の出力端子に略同じ信号を出力するミラー回路と、
をさらに有する、請求項1に記載のIV変換器。 - 容量成分を有し、慣性力に応じた電流を出力する慣性力センサ素子と、
前記電流を電圧に変換するIV変換器と、
前記慣性力を検知する検知回路と、
を備え、
前記IV変換器は、
前記慣性力センサに接続されるよう構成された第1のオペアンプと、
前記第1のオペアンプに接続された第2のオペアンプと、
前記第2のオペアンプに接続されたインピーダンス素子と、
を備え、
前記第1のオペアンプは、
前記容量成分に接続されるように構成された第1の入力端子と、
基準電位に接続された第2の入力端子と、
前記第1の入力端子に接続されることにより帰還ループを構成する第1の出力端子と、
第2の出力端子と、
を有し、
前記第2のオペアンプは、
前記第2の出力端子に接続された第3の入力端子と、
基準電位に接続された第4の入力端子と、
前記インピーダンス素子を介して前記第3の入力端子に接続されることにより帰還ループを構成する第3の出力端子と、
を有し、
前記第1のオペアンプの前記第2の出力端子が出力する電流の位相は前記第1のオペアンプの前記第1の出力端子が出力する電流の位相と略等しく、
前記検知回路は前記第3の出力端子から出力される信号に基づいて前記慣性力を検知する、慣性力センサ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014506001A JPWO2013140740A1 (ja) | 2012-03-19 | 2013-03-11 | Iv変換器およびこのiv変換器を用いた慣性力センサ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012061457 | 2012-03-19 | ||
JP2012061457 | 2012-03-19 | ||
JP2014506001A JPWO2013140740A1 (ja) | 2012-03-19 | 2013-03-11 | Iv変換器およびこのiv変換器を用いた慣性力センサ |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2013140740A1 true JPWO2013140740A1 (ja) | 2015-08-03 |
Family
ID=49222223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014506001A Pending JPWO2013140740A1 (ja) | 2012-03-19 | 2013-03-11 | Iv変換器およびこのiv変換器を用いた慣性力センサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US9455672B2 (ja) |
JP (1) | JPWO2013140740A1 (ja) |
WO (1) | WO2013140740A1 (ja) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6218807A (ja) * | 1985-07-17 | 1987-01-27 | Toshiba Corp | カレントミラ−回路 |
JPH0766636A (ja) * | 1993-08-25 | 1995-03-10 | Sony Corp | I−v変換回路 |
JPH07175536A (ja) * | 1993-12-17 | 1995-07-14 | Toshiba Corp | カレントミラー回路 |
JPH08261764A (ja) * | 1995-03-20 | 1996-10-11 | Taiyo Yuden Co Ltd | 角速度検出器 |
JPH09252224A (ja) * | 1996-03-15 | 1997-09-22 | Rohm Co Ltd | 電流/電圧変換回路 |
JP2000266547A (ja) * | 1999-03-15 | 2000-09-29 | Citizen Watch Co Ltd | 角速度検出装置 |
JP2005114394A (ja) * | 2003-10-03 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 慣性センサ及びそれを用いた複合センサ |
JP2005121367A (ja) * | 2003-09-11 | 2005-05-12 | Olympus Corp | 光電流検出回路及びその光電流検出回路を用いた光電流検出装置並びに光学式エンコーダ |
JP2007005901A (ja) * | 2005-06-21 | 2007-01-11 | Nec Electronics Corp | 受光回路および受光回路を備える半導体集積回路装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0482271B1 (en) | 1990-10-24 | 1996-02-21 | International Business Machines Corporation | Current-to-voltage converter with low noise, wide bandwidth and high dynamic range |
JP2005252810A (ja) | 2004-03-05 | 2005-09-15 | Canon Inc | 電流電圧変換回路 |
US7902867B2 (en) * | 2006-04-03 | 2011-03-08 | Blaise Laurent Mouttet | Memristor crossbar neural interface |
JP2008216187A (ja) | 2007-03-07 | 2008-09-18 | Seiko Epson Corp | 検出装置、ジャイロセンサ、電子機器及び半導体装置 |
JP5079541B2 (ja) | 2007-03-16 | 2012-11-21 | シチズンホールディングス株式会社 | 物理量センサ |
JP2008241330A (ja) | 2007-03-26 | 2008-10-09 | Citizen Holdings Co Ltd | 圧電振動子の検出回路およびジャイロセンサ |
JP4825838B2 (ja) | 2008-03-31 | 2011-11-30 | ルネサスエレクトロニクス株式会社 | 出力増幅回路及びそれを用いた表示装置のデータドライバ |
US8081030B2 (en) | 2008-12-19 | 2011-12-20 | Honeywell International Inc. | Multi-mode amplifier |
US9331469B2 (en) * | 2009-10-02 | 2016-05-03 | Semiconductor Components Industries, Llc | Ground fault circuit interrupter and method |
JPWO2013132842A1 (ja) * | 2012-03-07 | 2015-07-30 | パナソニックIpマネジメント株式会社 | 荷重センサ |
-
2013
- 2013-03-11 JP JP2014506001A patent/JPWO2013140740A1/ja active Pending
- 2013-03-11 WO PCT/JP2013/001551 patent/WO2013140740A1/ja active Application Filing
- 2013-03-11 US US14/374,373 patent/US9455672B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6218807A (ja) * | 1985-07-17 | 1987-01-27 | Toshiba Corp | カレントミラ−回路 |
JPH0766636A (ja) * | 1993-08-25 | 1995-03-10 | Sony Corp | I−v変換回路 |
JPH07175536A (ja) * | 1993-12-17 | 1995-07-14 | Toshiba Corp | カレントミラー回路 |
JPH08261764A (ja) * | 1995-03-20 | 1996-10-11 | Taiyo Yuden Co Ltd | 角速度検出器 |
JPH09252224A (ja) * | 1996-03-15 | 1997-09-22 | Rohm Co Ltd | 電流/電圧変換回路 |
JP2000266547A (ja) * | 1999-03-15 | 2000-09-29 | Citizen Watch Co Ltd | 角速度検出装置 |
JP2005121367A (ja) * | 2003-09-11 | 2005-05-12 | Olympus Corp | 光電流検出回路及びその光電流検出回路を用いた光電流検出装置並びに光学式エンコーダ |
JP2005114394A (ja) * | 2003-10-03 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 慣性センサ及びそれを用いた複合センサ |
JP2007005901A (ja) * | 2005-06-21 | 2007-01-11 | Nec Electronics Corp | 受光回路および受光回路を備える半導体集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
US9455672B2 (en) | 2016-09-27 |
US20150013459A1 (en) | 2015-01-15 |
WO2013140740A1 (ja) | 2013-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4671305B2 (ja) | 物理量センサ | |
US8511161B2 (en) | Physical amount detecting device | |
US8539833B2 (en) | Physical amount detecting device | |
US8701487B2 (en) | Angular velocity detection apparatus and electronic instrument | |
JP4678427B2 (ja) | 振動ジャイロ | |
US8829992B2 (en) | Signal level conversion circuit, physical quantity detection device and electronic apparatus | |
JP4696996B2 (ja) | 慣性力センサ | |
JPH0674774A (ja) | ジャイロの駆動回路 | |
JP2007057340A (ja) | 発振回路及び角速度センサ | |
JPH03172714A (ja) | 検出回路 | |
JP2012149904A (ja) | 温度検出回路及びセンサー装置 | |
US9513309B2 (en) | Inertia sensor with switching elements | |
JP2017050664A (ja) | アナログ基準電圧生成回路、回路装置、物理量センサー、電子機器及び移動体 | |
WO2013140740A1 (ja) | Iv変換器およびこのiv変換器を用いた慣性力センサ | |
JP5079541B2 (ja) | 物理量センサ | |
JP2008241330A (ja) | 圧電振動子の検出回路およびジャイロセンサ | |
JP6731235B2 (ja) | 複合スイッチ回路、物理量検出装置、電子機器および移動体 | |
JP2019082454A (ja) | ジャイロセンサー装置、姿勢制御システムおよびカメラ装置 | |
JP2013019834A (ja) | 角速度検出回路、集積回路装置及び角速度検出装置 | |
JP2007205803A (ja) | センサ信号処理システムおよびディテクタ | |
JP2006177895A (ja) | 静電容量/電圧変換装置および力学量センサ | |
JP4440360B2 (ja) | 角速度検出装置 | |
JP5470040B2 (ja) | 角速度信号検出回路及び角速度信号検出方法 | |
JP2014149229A (ja) | 角速度センサ | |
JP2012163477A (ja) | 角速度センサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160115 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20160520 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170328 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170417 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170926 |