JPWO2013088623A1 - 処理装置およびシールド - Google Patents
処理装置およびシールド Download PDFInfo
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- JPWO2013088623A1 JPWO2013088623A1 JP2013549072A JP2013549072A JPWO2013088623A1 JP WO2013088623 A1 JPWO2013088623 A1 JP WO2013088623A1 JP 2013549072 A JP2013549072 A JP 2013549072A JP 2013549072 A JP2013549072 A JP 2013549072A JP WO2013088623 A1 JPWO2013088623 A1 JP WO2013088623A1
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- shield
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (7)
- 基板保持部と、前記基板保持部によって基板が保持された際にその基板の周囲を取り囲むように配置されたシールドと、前記シールドを磁力によって保持するシールド保持部とを備える処理装置であって、
前記シールドは、第1極性を有する磁極が前記シールド保持部に向けて配置された複数の第1磁石と、第2極性を有する磁極が前記シールド保持部に向けて配置された複数の第2磁石とを有し、前記複数の第1磁石と前記複数の第2磁石とが前記シールドの中心に対して対称な位置に配置され、
前記シールド保持部は、前記複数の第2磁石との間で吸引力を発生するように、前記第1極性を有する磁極が前記シールドに向けて配置された複数の第3磁石と、前記複数の第1磁石との間で吸引力を発生するように、前記第2極性を有する磁極が前記シールドに向けて配置された複数の第4磁石とを有し、前記複数の第3磁石と前記複数の第4磁石とが前記シールド保持部の中心に対して対称な位置に配置され、
前記シールド保持部は、熱による前記シールドの変形を許容するように前記シールドを保持し、前記複数の第1磁石と前記複数の第4磁石との間に作用する磁力と前記複数の第2磁石と前記複数の第3磁石との間に作用する磁力とによって前記シールドの中心が前記シールド保持部の中心に位置決めされる、
ことを特徴とする処理装置。 - 前記シールドは、前記シールド保持部の上に載置されている、
ことを特徴とする請求項1に記載の処理装置。 - 前記複数の第1磁石は等間隔で配置され、前記複数の第2磁石は等間隔で配置され、前記複数の第3磁石は等間隔で配置され、前記複数の第4磁石は等間隔で配置されている、
ことを特徴とする請求項1又は2に記載の処理装置。 - 前記複数の第1磁石は、前記シールドの中心を通る直線の一方の側に配置され、前記複数の第2磁石は、前記直線の他方の側に配置され、
前記複数の第3磁石は、前記複数の第2磁石に対してそれぞれ対面するように配置され、前記複数の第4磁石は、前記複数の第1磁石に対してそれぞれ対面するように配置されている、
ことを特徴とする請求項1乃至3のいずれか1項に記載の処理装置。 - 処理装置においてシールド保持部によって保持されるシールドであって、
前記シールドを磁力によって前記シールド保持部に固定するために、第1極性を有する磁極が前記シールド保持部に向くように配置された複数の第1磁石と、第2極性を有する磁極が前記シールド保持部に向くように配置された複数の第2磁石とを有し、
前記複数の第1磁石と前記複数の第2磁石とが前記シールドの中心に対して対称な位置に配置されている、
ことを特徴とするシールド。 - 前記複数の第1磁石は等間隔で配置され、前記複数の第2磁石は等間隔で配置されている、
ことを特徴とする請求項5に記載のシールド。 - 前記複数の第1磁石は、前記シールドの中心を通る直線の一方の側に配置され、前記複数の第2磁石は、前記直線の他方の側に配置されている、
ことを特徴とする請求項5又は6に記載のシールド。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013549072A JP5827344B2 (ja) | 2011-12-15 | 2012-10-22 | 処理装置およびシールド |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011275073 | 2011-12-15 | ||
JP2011275073 | 2011-12-15 | ||
JP2013549072A JP5827344B2 (ja) | 2011-12-15 | 2012-10-22 | 処理装置およびシールド |
PCT/JP2012/006742 WO2013088623A1 (ja) | 2011-12-15 | 2012-10-22 | 処理装置およびシールド |
Publications (2)
Publication Number | Publication Date |
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JPWO2013088623A1 true JPWO2013088623A1 (ja) | 2015-04-27 |
JP5827344B2 JP5827344B2 (ja) | 2015-12-02 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013549072A Active JP5827344B2 (ja) | 2011-12-15 | 2012-10-22 | 処理装置およびシールド |
Country Status (4)
Country | Link |
---|---|
US (1) | US9422619B2 (ja) |
JP (1) | JP5827344B2 (ja) |
CN (1) | CN103998642B (ja) |
WO (1) | WO2013088623A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9659677B2 (en) * | 2014-06-27 | 2017-05-23 | Varian Semiconductor Equipment Associates, Inc. | Shielding device for substrate edge protection and method of using same |
JP2016127185A (ja) * | 2015-01-06 | 2016-07-11 | 東京エレクトロン株式会社 | シールドリングおよび基板載置台 |
GB201518756D0 (en) * | 2015-10-22 | 2015-12-09 | Spts Technologies Ltd | Apparatus for plasma dicing |
GB2627462A (en) * | 2023-02-22 | 2024-08-28 | Edwards Vacuum Llc | Magnetic assembly for a sputter Ion pump |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2783421B2 (ja) * | 1989-06-02 | 1998-08-06 | 日本真空技術株式会社 | スパッタリング装置 |
JP3106253B2 (ja) * | 1991-04-09 | 2000-11-06 | 日本真空技術株式会社 | スパッタリング蒸発源装置 |
JP3086095B2 (ja) * | 1992-12-22 | 2000-09-11 | キヤノン株式会社 | スパッタリング装置 |
JP2003183810A (ja) * | 2001-12-17 | 2003-07-03 | Fujitsu Ltd | スパッタ装置 |
JP3650772B2 (ja) * | 2002-12-17 | 2005-05-25 | 松下電器産業株式会社 | プラズマ処理装置 |
JP4386753B2 (ja) * | 2004-02-19 | 2009-12-16 | キヤノンアネルバ株式会社 | ウェハーステージ及びプラズマ処理装置 |
JP4700714B2 (ja) * | 2008-06-04 | 2011-06-15 | キヤノンアネルバ株式会社 | マスク、該マスクを用いた成膜装置、及び、該マスクを用いた成膜方法 |
WO2009153856A1 (ja) * | 2008-06-17 | 2009-12-23 | キヤノンアネルバ株式会社 | 防着カバー付きキャリアおよび防着カバー着脱装置 |
KR101049804B1 (ko) * | 2009-02-19 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 증착 장치용 마스크 밀착 수단 및 이를 이용한 증착 장치 |
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2012
- 2012-10-22 WO PCT/JP2012/006742 patent/WO2013088623A1/ja active Application Filing
- 2012-10-22 JP JP2013549072A patent/JP5827344B2/ja active Active
- 2012-10-22 CN CN201280061498.1A patent/CN103998642B/zh active Active
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2014
- 2014-06-05 US US14/296,505 patent/US9422619B2/en active Active
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Publication number | Publication date |
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JP5827344B2 (ja) | 2015-12-02 |
US20140283743A1 (en) | 2014-09-25 |
WO2013088623A1 (ja) | 2013-06-20 |
CN103998642B (zh) | 2016-01-06 |
CN103998642A (zh) | 2014-08-20 |
US9422619B2 (en) | 2016-08-23 |
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