JPWO2013073505A1 - パターン形成用自己組織化組成物及びパターン形成方法 - Google Patents

パターン形成用自己組織化組成物及びパターン形成方法 Download PDF

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Publication number
JPWO2013073505A1
JPWO2013073505A1 JP2013544262A JP2013544262A JPWO2013073505A1 JP WO2013073505 A1 JPWO2013073505 A1 JP WO2013073505A1 JP 2013544262 A JP2013544262 A JP 2013544262A JP 2013544262 A JP2013544262 A JP 2013544262A JP WO2013073505 A1 JPWO2013073505 A1 JP WO2013073505A1
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Prior art keywords
group
pattern
self
polymer
atom
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English (en)
Japanese (ja)
Inventor
信也 峯岸
信也 峯岸
祐司 浪江
祐司 浪江
永井 智樹
智樹 永井
曽根 卓男
卓男 曽根
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JSR Corp
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JSR Corp
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Priority to JP2013544262A priority Critical patent/JPWO2013073505A1/ja
Publication of JPWO2013073505A1 publication Critical patent/JPWO2013073505A1/ja
Pending legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP2013544262A 2011-11-14 2012-11-12 パターン形成用自己組織化組成物及びパターン形成方法 Pending JPWO2013073505A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013544262A JPWO2013073505A1 (ja) 2011-11-14 2012-11-12 パターン形成用自己組織化組成物及びパターン形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011248549 2011-11-14
JP2011248549 2011-11-14
JP2013544262A JPWO2013073505A1 (ja) 2011-11-14 2012-11-12 パターン形成用自己組織化組成物及びパターン形成方法

Publications (1)

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JPWO2013073505A1 true JPWO2013073505A1 (ja) 2015-04-02

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JP2013544262A Pending JPWO2013073505A1 (ja) 2011-11-14 2012-11-12 パターン形成用自己組織化組成物及びパターン形成方法

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JP (1) JPWO2013073505A1 (fr)
TW (1) TW201323508A (fr)
WO (1) WO2013073505A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110024081A (zh) * 2017-03-10 2019-07-16 株式会社Lg化学 图案化基底的制备方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013146600A1 (fr) * 2012-03-27 2013-10-03 日産化学工業株式会社 Composition filmogène de sous-couche pour films auto-assemblés
JP6023010B2 (ja) * 2013-06-26 2016-11-09 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
KR102105196B1 (ko) * 2013-07-25 2020-04-29 에스케이하이닉스 주식회사 반도체 소자 제조 방법
US20150179434A1 (en) 2013-07-25 2015-06-25 SK Hynix Inc. Nano-scale structures
US11674053B2 (en) 2013-09-19 2023-06-13 Nissan Chemical Industries, Ltd. Composition for forming underlayer film of self-assembled film including aliphatic polycyclic structure
US10421878B2 (en) 2014-01-16 2019-09-24 Brewer Science, Inc. High-Chi block copolymers for directed self-assembly
JP6491865B2 (ja) * 2014-12-05 2019-03-27 東京応化工業株式会社 下地剤、及び相分離構造を含む構造体の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11236416A (ja) * 1997-10-08 1999-08-31 Shin Etsu Chem Co Ltd ポリスチレン系高分子化合物及び化学増幅ポジ型レジスト材料並びにパターン形成方法
JP2003140350A (ja) * 2001-11-07 2003-05-14 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
JP2003255546A (ja) * 2001-12-28 2003-09-10 Fujitsu Ltd アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
JP2005126481A (ja) * 2003-10-21 2005-05-19 Nippon Steel Chem Co Ltd ブロック共重合体及びその製造方法
JP2005340720A (ja) * 2004-05-31 2005-12-08 Jsr Corp パターン形成方法及び半導体装置の製造方法
JP2007246600A (ja) * 2006-03-14 2007-09-27 Shin Etsu Chem Co Ltd 自己組織化高分子膜材料、自己組織化パターン、及びパターン形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11236416A (ja) * 1997-10-08 1999-08-31 Shin Etsu Chem Co Ltd ポリスチレン系高分子化合物及び化学増幅ポジ型レジスト材料並びにパターン形成方法
JP2003140350A (ja) * 2001-11-07 2003-05-14 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
JP2003255546A (ja) * 2001-12-28 2003-09-10 Fujitsu Ltd アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
JP2005126481A (ja) * 2003-10-21 2005-05-19 Nippon Steel Chem Co Ltd ブロック共重合体及びその製造方法
JP2005340720A (ja) * 2004-05-31 2005-12-08 Jsr Corp パターン形成方法及び半導体装置の製造方法
JP2007246600A (ja) * 2006-03-14 2007-09-27 Shin Etsu Chem Co Ltd 自己組織化高分子膜材料、自己組織化パターン、及びパターン形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110024081A (zh) * 2017-03-10 2019-07-16 株式会社Lg化学 图案化基底的制备方法
CN110024081B (zh) * 2017-03-10 2023-06-06 株式会社Lg化学 图案化基底的制备方法

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TW201323508A (zh) 2013-06-16
WO2013073505A1 (fr) 2013-05-23

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