WO2014188806A1 - Procédé de lithographie auto-organisé et composition de formation de film de sous-couche - Google Patents

Procédé de lithographie auto-organisé et composition de formation de film de sous-couche Download PDF

Info

Publication number
WO2014188806A1
WO2014188806A1 PCT/JP2014/060231 JP2014060231W WO2014188806A1 WO 2014188806 A1 WO2014188806 A1 WO 2014188806A1 JP 2014060231 W JP2014060231 W JP 2014060231W WO 2014188806 A1 WO2014188806 A1 WO 2014188806A1
Authority
WO
WIPO (PCT)
Prior art keywords
self
film
lithography process
silicon atom
assembled
Prior art date
Application number
PCT/JP2014/060231
Other languages
English (en)
Japanese (ja)
Inventor
信也 峯岸
祐亮 庵野
祐司 浪江
永井　智樹
和憲 高梨
木村　徹
Original Assignee
Jsr株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr株式会社 filed Critical Jsr株式会社
Publication of WO2014188806A1 publication Critical patent/WO2014188806A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202—LCD, i.e. liquid crystal displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Definitions

  • the present invention relates to a self-organized lithography process and a composition for forming an underlayer film suitably used in this process.
  • a film containing a component such as a polymer to be self-assembled is formed on another film (hereinafter also referred to as “underlayer film”), whereby the above-described phase separation by self-assembly is performed. It is known that can occur effectively.
  • various studies have been conducted on this lower layer film, and various phase separation structures can be formed by appropriately controlling the surface free energy of the lower layer film when the block copolymer is self-assembled. (See JP2008-36491 and JP2012-174984).
  • the formation of the lower layer film is complicated, and the obtained phase separation structure and the good pattern remain insufficient.
  • hydrofluoric acid or the like it is necessary to use hydrofluoric acid or the like for the removal thereof, which is complicated and may cause damage to the substrate.
  • the present invention has been made based on the circumstances as described above, and its purpose is to form a lower layer film that can be easily formed and removed, and to form a phase separation structure by self-organization with this lower layer film. It is an object of the present invention to provide a self-assembled lithography process that can be formed and, in turn, can form excellent self-assembled patterns.
  • the invention made to solve the above problems is Forming a silicon atom-containing film having a static contact angle of pure water of 70 ° or less with a composition containing a silicon atom-containing compound;
  • a self-assembled lithography process comprising a step of laminating a self-assembled film having a phase separation structure on the silicon atom-containing film and a step of removing at least a part of the phase of the self-assembled film.
  • An underlayer film forming composition for forming an underlayer film of a self-assembled film in a self-assembled lithography process It is a composition for forming an underlayer film containing a silicon atom and having a static contact angle of pure water of the above underlayer film of 70 ° or less.
  • an underlayer film that can be easily formed and removed can be formed. Can be formed, and thus an excellent pattern can be formed. Therefore, they can be suitably used for lithography processes in the manufacture of various electronic devices such as semiconductor devices and liquid crystal devices that are required to be further miniaturized.
  • Self-organized refers to a phenomenon of spontaneously constructing an organization or structure, not only due to control from an external factor.
  • a film having a phase separation structure by self-assembly (self-assembled film) is formed on a lower layer film that is a specific silicon atom-containing film, for example, by applying a self-assembled composition. Then, by removing a part of the phase in the self-assembled film, a pattern (self-assembled pattern) can be formed.
  • the self-organized lithography process of the present invention comprises: A step of forming a silicon atom-containing film having a static contact angle of pure water of 70 ° or less with a composition containing a silicon atom-containing compound (hereinafter, also referred to as “silicon atom-containing film forming step”); A step of laminating a self-assembled film having a phase separation structure on the silicon atom-containing film (hereinafter also referred to as “self-assembled film laminating step”), and a step of removing at least a part of the phase of the self-assembled film (Hereinafter also referred to as “removal process”)
  • a self-assembled film laminating step a phase separation structure on the silicon atom-containing film
  • removal process removing at least a part of the phase of the self-assembled film
  • This step is a step of forming a silicon atom-containing film having a static contact angle of 70 ° or less with a composition containing a silicon atom-containing compound.
  • the composition having this silicon atom-containing compound will be described later as a composition for forming an underlayer film.
  • This silicon atom-containing film is usually formed on a substrate, and by this step, a substrate with an underlayer film in which a silicon atom-containing film 102 is formed on a substrate 101 is obtained as shown in FIG.
  • the self-assembled film is formed by laminating on the silicon atom-containing film 102.
  • phase separation structure microdomain structure of the self-assembled film
  • the structure can be controlled, and a phase separation structure by self-organization can be formed easily and satisfactorily. As a result, an excellent pattern can be formed.
  • the transfer process can be improved by having the silicon atom-containing film 102.
  • the silicon atom-containing film 102 can be easily removed while suppressing the influence on the substrate, using an alkaline stripping solution, after the substrate is etched. .
  • the upper limit of the static contact angle of pure water of the silicon atom-containing film is 70 °, preferably 67 °, and more preferably 65 °.
  • the lower limit of the static contact angle is preferably 20 °, more preferably 40 °, and particularly preferably 60 °.
  • the substrate 101 a conventionally known substrate such as a silicon wafer or a wafer coated with aluminum can be used.
  • a method for forming the silicon atom-containing film 102 is not particularly limited.
  • a composition containing the silicon atom-containing compound (a composition for forming a lower layer film) is applied onto the substrate 101 by a known method such as a spin coating method.
  • the coating film formed in this manner can be formed by curing by heating and / or exposure. Examples of radiation used for this exposure include visible light, ultraviolet light, far ultraviolet light, X-rays, electron beams, ⁇ -rays, molecular beams, and ion beams.
  • the temperature when heating the coating film is not particularly limited, but is preferably 100 ° C. or higher and 400 ° C. or lower, more preferably 120 ° C. or higher and 450 ° C. or lower, and more preferably 150 ° C. or higher and 300 ° C.
  • the following is more preferable, 200 ° C. or higher and 240 ° C. or lower is particularly preferable, and 220 ° C. is further particularly preferable.
  • the time for heating the coating film is not particularly limited, but is preferably 10 seconds or longer and 1 hour or shorter, more preferably 15 seconds or longer and 10 minutes or shorter, further preferably 20 seconds or longer and 150 seconds or shorter, and 40 seconds or longer and 80 seconds or shorter.
  • the heating temperature and time for forming the silicon atom-containing film are set within the above range, the silicon atom-containing film can be formed easily and reliably.
  • heating for 1 minute at 220 ° C. is usually used as the formation condition of the silicon atom-containing film. Used.
  • the atmosphere for heating the coating film is not particularly limited, and may be an air atmosphere or an inert gas atmosphere such as nitrogen gas.
  • the thickness of the silicon atom-containing film 102 is not particularly limited, but is preferably 5 nm to 20,000 nm, more preferably 10 nm to 1,000 nm, still more preferably 15 nm to 500 nm, and particularly preferably 20 nm to 100 nm.
  • the self-assembled lithography process may include a step of forming a pre-pattern after the silicon atom-containing film forming step. As shown in FIG. 2, this step is a step of forming a prepattern 103 on the silicon atom-containing film 102 using a prepattern forming composition.
  • the pre-pattern 103 controls phase separation during the formation of the self-assembled film, and can form a phase separation structure by self-assembly better. That is, among the components that form a self-assembled film, components that have a high affinity with the side surface of the prepattern form a phase along the prepattern, and components that have a low affinity have a position away from the prepattern.
  • phase separation structure by self-organization can be formed more satisfactorily.
  • phase separation structure to be formed can be finely controlled by the material, length, thickness, shape and the like of the prepattern.
  • the pre-pattern can be appropriately selected according to the pattern to be finally formed. For example, a line and space pattern, a hole pattern, a pillar pattern, or the like can be used.
  • a method for forming the pre-pattern 103 a method similar to a known resist pattern forming method can be used. Further, as the pre-pattern forming composition, a conventional resist film-forming composition can be used. As a specific method for forming the pre-pattern 103, for example, a chemically amplified resist composition such as ARX2928JN (manufactured by JSR) is used and applied onto the silicon atom-containing film 102 to form a resist film. Next, exposure is performed by irradiating a desired region of the resist film with radiation through a mask having a specific pattern. Examples of the radiation include electromagnetic waves such as ultraviolet rays, far ultraviolet rays, and X-rays, and charged particle beams such as electron beams.
  • the radiation include electromagnetic waves such as ultraviolet rays, far ultraviolet rays, and X-rays, and charged particle beams such as electron beams.
  • PEB post-exposure baking
  • the surface of the pre-pattern 103 may be subjected to a hydrophobic treatment or a hydrophilic treatment.
  • a hydrogenation treatment by exposing to hydrogen plasma for a certain period of time can be cited.
  • the above-described self-organization can be promoted.
  • This step is a step of laminating a self-assembled film having a phase separation structure on the silicon atom-containing film formed in the silicon atom-containing film forming step.
  • the self-assembled film is laminated by, for example, applying a self-assembled composition containing a component capable of forming a phase-separated structure by self-assembly onto the silicon atom-containing film formed. It can be performed by forming a film and self-organizing the above components in the coating film.
  • the prepattern 103 is used, as shown in FIG. 3, the self-assembling composition is applied to a region on the silicon atom-containing film 102 delimited by the prepattern 103 to form a coating film 104. Then, a self-assembled film 105 having a phase separation structure is formed.
  • the self-assembled film 105 by applying the self-assembled composition on the silicon atom-containing film 102 to form the coating film 104, annealing and the like are performed, so that parts having the same properties can be obtained. It is possible to promote so-called self-organization that accumulates and spontaneously forms an ordered pattern. As a result, a phase separation structure is formed on the silicon atom-containing film 102. This phase separation structure is preferably formed along the pre-pattern, and the interface formed by phase separation is more preferably substantially parallel to the side surface of the pre-pattern.
  • a phase such as a component having a higher affinity with the pre-pattern 103 is formed along the pre-pattern 103 (105b), and a phase such as the other component is Formed in the portion farthest from the side surface of the pre-pattern, that is, the central portion of the region delimited by the pre-pattern (105a), forming a lamellar phase separation structure in which lamellar (plate-like) phases are alternately arranged .
  • a phase such as a component having a higher affinity with the pre-pattern is formed along the side surface of the hole of the pre-pattern, and a phase such as the other component is formed in the central portion of the hole. It is formed.
  • a phase such as a component having a higher affinity with the pre-pattern is formed along the side of the pillar of the pre-pattern, and the other part is separated from each pillar.
  • a phase such as a component is formed.
  • a desired phase separation structure can be formed by appropriately adjusting the distance between the pillars of the pre-pattern, the structure of each polymer and the like in the self-assembled composition, the blending ratio, and the like.
  • phase separation structure formed in this step is composed of a plurality of phases, and the interface formed from these phases is usually substantially vertical, but the interface itself is not necessarily clear.
  • the phase separation structure to be obtained can be precisely controlled by the structure, blending ratio, and pre-pattern of each polymer component, and a more desired fine pattern can be obtained.
  • the component capable of forming a phase separation structure by self-assembly is not particularly limited as long as it has such properties.
  • a block copolymer is preferable, a block copolymer composed of a styrene unit-methacrylic acid ester unit is more preferable, and a styrene unit-methyl methacrylate unit. More preferred is a diblock copolymer.
  • the method for forming the coating film 104 by applying the self-assembling composition on a substrate is not particularly limited, and examples thereof include a method of applying the self-assembling composition by a spin coating method or the like. As a result, the self-assembling composition is applied between the prepatterns 103 on the silicon atom-containing film 102 and the coating film 104 is formed.
  • annealing method for example, a method of heating at a temperature of 80 ° C. to 400 ° C., preferably at a temperature of 80 ° C. to 300 ° C., by an oven, a hot plate or the like can be mentioned.
  • the annealing time is usually 10 seconds to 120 minutes, preferably 30 seconds to 60 minutes.
  • the film thickness of the self-assembled film 105 thus obtained is preferably 0.1 nm to 500 nm, and more preferably 0.5 nm to 100 nm.
  • this step is a step of removing a part of the phase separation structure of the self-assembled film 105.
  • a part of the phase 105a and / or the pre-pattern 103 can be removed by an etching process using a difference in etching rate between phases separated by self-organization.
  • FIG. 5 shows a state after removing a part of the phase 105a and the pre-pattern 103 in the phase separation structure.
  • Examples of a method for removing a part of the phase separation structure 105a or the pre-pattern 103 in the phase separation structure of the self-assembled film 105 include reactive ion etching (RIE) such as chemical dry etching and chemical wet etching; And publicly known methods such as physical etching such as ion beam etching. Of these, reactive ion etching (RIE) is preferable, and among these, chemical dry etching using CF 4 , O 2 gas, etc., organic solvents such as methyl isobutyl ketone (MIBK), 2-propanol (IPA), fluorine Chemical wet etching (wet development) using a liquid etching solution such as an acid is more preferable.
  • RIE reactive ion etching
  • MIBK methyl isobutyl ketone
  • IPA 2-propanol
  • fluorine Chemical wet etching wet development
  • the self-organized lithography process preferably further includes a substrate pattern forming step after the removal configuration.
  • This step is a step of patterning by etching the silicon atom-containing film and the substrate using a pattern composed of a part of the phase 105b of the remaining phase separation film as a mask.
  • the phase used as a mask is removed from the substrate by dissolution treatment or the like, and finally a patterned substrate (pattern) can be obtained.
  • the silicon atom-containing film remaining on the substrate after etching the substrate is applied to the substrate by wet peeling using an alkaline developer such as an aqueous tetramethylammonium hydroxide solution or an alkaline remover such as an ammonia / hydrogen peroxide mixture. It can be removed while suppressing the effect.
  • Examples of the obtained pattern include a line and space pattern and a hole pattern.
  • the etching method the same method as in the removing step can be used, and the etching gas and the etching solution can be appropriately selected according to the material of the silicon atom-containing film and the substrate.
  • a mixed gas of chlorofluorocarbon gas and SF 4 or the like can be used.
  • a mixed gas of BCl 3 and Cl 2 or the like can be used.
  • the pattern obtained by the self-organized lithography process is suitably used for semiconductor elements and the like, and the semiconductor elements are widely used for LEDs, solar cells and the like.
  • An underlayer film forming composition for forming an underlayer film of a self-assembled film in the self-assembled lithography process includes an underlayer film containing silicon atoms and having a static contact angle of 70 ° or less of pure water. It is a composition for formation.
  • the composition for forming the lower layer film is a composition containing a silicon atom-containing compound (hereinafter also referred to as “silicon atom-containing compound (A)”). Moreover, it is preferable that the said composition for lower layer film formation contains a crosslinking accelerator (B) and a solvent (C), and may contain the other component further. Hereinafter, each component will be described.
  • the silicon atom-containing compound (A) is not particularly limited as long as it is a compound containing a silicon atom, and examples thereof include polysiloxane and silane compound. Of these, polysiloxane is preferred as the silicon atom-containing compound (A).
  • the polysiloxane is not particularly limited as long as it is a compound having a siloxane bond (—Si—O—), but a hydrolysis condensate of a compound containing a hydrolyzable silane compound represented by the following formula (i) is preferable. .
  • R A is a hydrogen atom or a monovalent organic group.
  • X is a halogen atom or —OR B.
  • R B is a monovalent organic group.
  • a is an integer of 0 to 3. Provided that when R A and X is plural, respectively, a plurality of R A and X may be the same as or different from each other.
  • Examples of the monovalent organic group represented by R A include a heteroatom containing a monovalent hydrocarbon group having 1 to 30 carbon atoms and a group having a heteroatom between carbon-carbons of the hydrocarbon group. Group, a group obtained by substituting a part or all of the hydrogen atoms of the hydrocarbon group and heteroatom-containing group with a substituent, and the like.
  • Examples of the monovalent hydrocarbon group having 1 to 30 carbon atoms include a monovalent chain hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, and 6 to 6 carbon atoms. 30 aromatic hydrocarbon groups and the like.
  • Examples of the monovalent chain hydrocarbon group include: Alkyl groups such as methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, sec-butyl, and t-butyl; An alkenyl group such as an ethenyl group, a propenyl group, a butenyl group; Examples thereof include alkynyl groups such as ethynyl group, propynyl group and butynyl group.
  • Examples of the monovalent alicyclic hydrocarbon group include: Cycloalkenyl groups such as cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, norbornyl group, adamantyl group, tricyclodecyl group, tetracyclododecyl group; Examples thereof include cycloalkenyl groups such as cyclopropenyl group, cyclobutenyl group, cyclopentenyl group, cyclohexenyl group, norbornenyl group, and tricyclodecenyl group.
  • Examples of the monovalent aromatic hydrocarbon group include: Aryl groups such as phenyl, tolyl, xylyl, mesityl, naphthyl, anthryl; Examples thereof include aralkyl groups such as benzyl group, phenethyl group, phenylmethyl group, naphthylmethyl group and anthrylmethyl group.
  • hetero atom of the group having a hetero atom examples include an oxygen atom, a nitrogen atom, a sulfur atom, and a phosphorus atom.
  • R ′ is a monovalent hydrocarbon group having 1 to 20 carbon atoms.
  • substituents examples include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom, hydroxy group, carboxy group, cyano group and nitro group.
  • R A is preferably a monovalent hydrocarbon group, more preferably a monovalent chain hydrocarbon group, a monovalent aromatic hydrocarbon group, still more preferably an alkyl group or an aryl group, A methyl group, a phenyl group, and a tolyl group are particularly preferable.
  • Examples of the monovalent organic group represented by R B include the same groups as those exemplified as the monovalent organic group for R A.
  • X is preferably —OR B , more preferably an alkoxy group in which R B is an alkyl group having 1 to 6 carbon atoms, and even more preferably a methoxy group or an ethoxy group.
  • a tetrafunctional silane when a is 1, a trifunctional silane, when a is 2, a bifunctional silane, and when a is 3, a monofunctional silane.
  • 0 and 1 are preferable, and 1 is more preferable.
  • hydrolyzable silane compound represented by the above formula (i) examples include: Tetrafunctional silanes such as tetramethoxysilane and tetraethoxysilane; Methyltrimethoxysilane, methyltriethoxysilane, methyltri-i-propoxysilane, methyltri-n-butoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltrii-propoxysilane, ethyltrin-butoxysilane, n-propyltrimethoxysilane , N-propyltriethoxysilane, n-butyltrimethoxysilane, n-butyltriethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, decyltrimethoxysilane, vinyltrimethoxysilane
  • tetramethoxysilane, tetraethoxysilane, methyltrimethoxysilane, phenyltrimethoxysilane, 4-methylphenyltrimethoxysilane, 4-methoxyphenyltrimethoxysilane, naphthalen-1-yltrimethoxysilane, 6-methoxy Naphthalen-2-yltrimethoxysilane is preferred.
  • Polysiloxane synthesis method As a method for synthesizing the polysiloxane, for example, at least a part of the hydrolyzable silane compound represented by the above formula (i) is hydrolyzed to convert the hydrolyzable group (X) into a silanol group, and then a condensation reaction. As long as it causes the problem, it is not particularly limited, but can be implemented as follows as an example.
  • the water used for the hydrolytic condensation of the hydrolyzable silane compound represented by the above formula (i) is preferably water purified by a method such as reverse osmosis membrane treatment, ion exchange treatment or distillation. By using such purified water, side reactions can be suppressed and the reactivity of hydrolysis can be improved.
  • the amount of water used is preferably 0.1 to 3 moles, more preferably 0.3 to 3 moles per 1 mole of the total amount of hydrolyzable groups of the hydrolyzable silane compound represented by the above formula (i).
  • the amount is 2 mol, more preferably 0.5 to 1.5 mol.
  • the solvent that can be used for the hydrolysis and condensation of the hydrolyzable silane compound represented by the above formula (i) is not particularly limited, but usually a self-assembling composition for pattern formation described later is used. The thing similar to what was illustrated as a solvent to contain can be used.
  • ethylene glycol monoalkyl ether acetate diethylene glycol dialkyl ether, propylene glycol monoalkyl ether, propylene glycol monoalkyl ether acetate, propionic acid esters are preferred, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether Propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate, methyl 3-methoxypropionate, or diacetone alcohol is more preferable.
  • the hydrolysis / condensation reaction of the hydrolyzable silane compound represented by the above formula (i) is preferably an acid catalyst (for example, hydrochloric acid, sulfuric acid, nitric acid, formic acid, oxalic acid, acetic acid, trifluoroacetic acid, trifluoromethanesulfonic acid).
  • an acid catalyst for example, hydrochloric acid, sulfuric acid, nitric acid, formic acid, oxalic acid, acetic acid, trifluoroacetic acid, trifluoromethanesulfonic acid.
  • Phosphoric acid, acidic ion exchange resins, various Lewis acids Phosphoric acid, acidic ion exchange resins, various Lewis acids
  • basic catalysts eg, nitrogen-containing compounds such as ammonia, primary amines, secondary amines, tertiary amines, pyridine; basic ion exchange resins; water
  • a catalyst such as hydroxide such as sodium oxide; carbonate such as potassium carbonate; carboxylate such as sodium acetate; various Lewis bases] or alkoxide (eg, zirconium alkoxide, titanium alkoxide, aluminum alkoxide).
  • alkoxide eg, zirconium alkoxide, titanium alkoxide, aluminum alkoxide
  • tri-i-propoxyaluminum can be used as the aluminum alkoxide.
  • the amount of the catalyst used is preferably 0.2 mol or less, more preferably 0.00001 to 0.1 mol per mol of the hydrolyzable silane compound monomer from the viewpoint of
  • the reaction temperature and reaction time in the hydrolytic condensation of the hydrolyzable silane compound represented by the above formula (i) are appropriately set.
  • the reaction temperature is preferably 40 ° C to 200 ° C, more preferably 50 ° C to 150 ° C.
  • the reaction time is preferably 30 minutes to 24 hours, more preferably 1 hour to 12 hours.
  • the hydrolysis condensation reaction can be performed most efficiently.
  • the reaction may be carried out in one step by adding the hydrolyzable silane compound, water and catalyst to the reaction system at one time, or the hydrolyzable silane compound, water and catalyst may be added in several steps.
  • the hydrolysis condensation reaction may be carried out in multiple stages by adding it to the reaction system in batches.
  • water and the produced alcohol can be removed from the reaction system by adding a dehydrating agent and then subjecting it to evaporation.
  • the dehydrating agent used at this stage is generally consumed or adsorbed by excess water, so that the dehydrating ability is completely consumed or removed by evaporation.
  • the molecular weight of the polysiloxane can be measured as polystyrene-reduced weight average molecular weight (Mw) using GPC (gel permeation chromatography) using tetrahydrofuran as a mobile phase.
  • Mw polystyrene-reduced weight average molecular weight
  • GPC gel permeation chromatography
  • tetrahydrofuran as a mobile phase.
  • the Mw of the polysiloxane is preferably 500 to 10,000, and more preferably 1,000 to 5,000.
  • the silicon atom containing compound (A) As content of the said silicon atom containing compound (A), 80 mass% or more is preferable with respect to the total solid in the said composition for lower layer film formation, 85 mass% or more is more preferable, 90 mass% or more is preferable. Further preferred.
  • the cross-linking accelerator (B) may promote a cross-linking reaction between or within molecular chains of silicon atom-containing compounds such as polysiloxane when forming a silicon atom-containing film with the composition for forming a lower layer film. It is a compound that can be.
  • the crosslinking accelerator (B) is not particularly limited as long as it has the above properties, and examples thereof include acids, bases, metal complexes, and nitrogen-containing compounds.
  • an acid generator described later can also be used.
  • a crosslinking accelerator (B) may be used individually by 1 type, and 2 or more types may also be mixed and used for it.
  • the acid examples include hydrohalic acid such as hydrochloric acid, nitric acid, sulfuric acid, sulfurous acid, hydrosulfuric acid, perchloric acid, hydrogen peroxide, carbonic acid, formic acid, carboxylic acid such as acetic acid, and sulfonic acid such as benzenesulfonic acid. , Phosphoric acid, heteropolyacid, inorganic solid acid and the like.
  • Examples of the base include nitrogen-containing compounds, alkali metal compounds such as alkali hydroxides and alkali carbonates, and the like.
  • metal complex examples include chelate complexes composed of metal elements of Groups 2, 4, 5 and 13 of the periodic table and ligands such as ⁇ -diketone and ketoester.
  • the crosslinking accelerator (B) is preferably a nitrogen-containing compound from the viewpoint of more effectively increasing the molecular weight of a silicon atom-containing compound such as polysiloxane.
  • nitrogen-containing compound examples include amine compounds, amide group-containing compounds, urea compounds, and nitrogen-containing heterocyclic compounds.
  • Examples of the amine compound include mono (cyclo) alkylamines; di (cyclo) alkylamines; tri (cyclo) alkylamines; substituted alkylanilines or derivatives thereof; ethylenediamine, N, N, N ′, N ′.
  • amide group-containing compound examples include Nt-butoxycarbonyl group-containing amino compounds, Nt-amyloxycarbonyl group-containing amino compounds, formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N -Methylacetamide, N, N-dimethylacetamide, propionamide, benzamide, pyrrolidone, N-methylpyrrolidone, N-acetyl-1-adamantylamine, isocyanuric acid tris (2-hydroxyethyl) and the like.
  • Nt-butoxycarbonyl group-containing amino compounds and Nt-amyloxycarbonyl group-containing amino compounds are preferred, and Nt-butoxycarbonyl-4-hydroxypiperidine, Nt-amyloxycarbonyl- 4-hydroxypiperidine, Nt-butoxycarbonylpyrrolidine, Nt-butoxycarbonyl-2-hydroxymethylpyrrolidine, Nt-butoxycarbonyl-2-phenylbenzimidazole are preferred.
  • urea compound examples include urea, methylurea, 1,1-dimethylurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, 1,3-diphenylurea, tri-n-butyl.
  • nitrogen-containing heterocyclic compound examples include imidazoles; pyridines; piperazines; pyrazine, pyrazole, pyridazine, quinosaline, purine, pyrrolidine, piperidine, piperidine ethanol, 3-piperidino-1,2-propanediol, morpholine, 4-methylmorpholine, 1- (4-morpholinyl) ethanol, 4-acetylmorpholine, 3- (N-morpholino) -1,2-propanediol, 1,4-dimethylpiperazine, 1,4-diazabicyclo [2.2 .2] and octane.
  • the nitrogen-containing compound is preferably an amine compound or a compound that generates an amine compound by heating, from the viewpoint of exhibiting appropriate basicity.
  • Examples of the amine compound or the compound that generates an amine compound by heating include (B1) a nitrogen-containing compound (hereinafter referred to as “(B1) having at least one polar group selected from a hydroxy group and a carboxy group and an ester group”. ) Compound "), (B2) a nitrogen-containing compound having at least one group selected from a hydroxy group, a carboxy group and an ether group (hereinafter also referred to as” (B2) compound "), and (B3) an ester group And a nitrogen-containing compound (hereinafter referred to as “(B3) compound”).
  • the ester group that the (B1) compound and the (B2) compound have are bonded to the nitrogen atom of the basic amino group and dissociated by heating to produce a compound having a basic amino group.
  • Examples of the compound (B1) include compounds represented by the following formulas (B-1-1) to (B-1-5).
  • Examples of the compound (B2) include compounds represented by the following formulas (B-2-1) to (B-2-4).
  • Examples of the compound (B3) include compounds represented by the following formulas (B-3-1) to (B-3-4).
  • R is an alkyl group having 1 to 10 carbon atoms or a cycloalkyl group having 3 to 10 carbon atoms.
  • the nitrogen-containing compound includes a compound represented by the above formula (B-1-1), a compound represented by the above formula (B-1-2), and a compound represented by the above formula (B-1-4).
  • the crosslinking accelerator (B) may be used alone or in combination of two or more.
  • content of the crosslinking accelerator (B) in the said composition for lower layer film formation from a viewpoint of performing moderately high molecular weight by bridge
  • the said composition for lower layer film formation contains a solvent (C) normally.
  • the solvent (C) include alcohol solvents, ether solvents, ketone solvents, amide solvents, ester solvents, hydrocarbon solvents, and mixed solvents thereof.
  • alcohol solvents include methanol, ethanol, n-propanol, i-propanol, n-butanol, i-butanol, sec-butanol, tert-butanol, n-pentanol, i-pentanol, 2-methylbutanol, sec-pentanol, tert-pentanol, 3-methoxybutanol, n-hexanol, 2-methylpentanol, sec-hexanol, 2-ethylbutanol, sec-heptanol, 3-heptanol, n-octanol, 2-ethylhexanol , Sec-octanol, n-nonyl alcohol, 2,6-dimethyl-4-heptanol, n-decanol, sec-undecyl alcohol, trimethylnonyl alcohol, sec-tetradecyl alcohol, sec-hept
  • ether solvent examples include diethyl ether, dipropyl ether, dibutyl ether, diphenyl ether and the like.
  • ketone solvent examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-n-butyl ketone, diethyl ketone, methyl-i-butyl ketone, methyl-n-pentyl ketone, ethyl-n-butyl ketone, methyl-n- And ketone solvents such as hexyl ketone, di-i-butyl ketone, trimethylnonanone, cyclopentanone, cyclohexanone, cycloheptanone, cyclooctanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, acetophenone, etc. .
  • amide solvents include N, N′-dimethylimidazolidinone, N-methylformamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, Examples thereof include N-methylpropionamide and N-methylpyrrolidone.
  • ester solvents include: Methyl acetate, ethyl acetate, n-propyl acetate, i-propyl acetate, n-butyl acetate, i-butyl acetate, sec-butyl acetate, n-pentyl acetate, sec-pentyl acetate, 3-methoxybutyl acetate, methyl pentyl acetate
  • Acetate solvents such as 2-ethylbutyl acetate, 2-ethylhexyl acetate, benzyl acetate, cyclohexyl acetate, methyl cyclohexyl acetate, n-nonyl acetate; Ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol mono-n-but
  • hydrocarbon solvent examples include n-pentane, i-pentane, n-hexane, i-hexane, n-heptane, i-heptane, 2,2,4-trimethylpentane, n-octane, i-octane and cyclohexane.
  • Aliphatic hydrocarbon solvents such as methylcyclohexane; Fragrances such as benzene, toluene, xylene, mesitylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propylbenzene, i-propylbenzene, diethylbenzene, i-butylbenzene, triethylbenzene, di-i-propylbenzen, n-amylnaphthalene Group hydrocarbon solvents and the like.
  • Fragrances such as benzene, toluene, xylene, mesitylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propylbenzene, i-propylbenzene, diethylbenzene, i-butylbenzene, triethylbenzene, di-i-propylbenz
  • alcohol solvents and ester solvents are preferable, polyhydric alcohol partial ether solvents and polyhydric alcohol partial ether acetate solvents are more preferable, and propylene glycol monoalkyl ether and propylene glycol monoalkyl ether acetate are more preferable. , Propylene glycol monoethyl ether, propylene glycol monopropyl ether, and propylene glycol monomethyl ether acetate are particularly preferable. These solvents may be used alone or in combination of two or more.
  • the underlayer film forming composition may contain other components other than the above components.
  • an acid generator, surfactant, etc. are mentioned, for example.
  • the composition for forming the lower layer film may contain an acid generator.
  • the composition for forming a lower layer film contains an acid generator, for example, when patterning the upper resist film, the acid generated by exposure in the resist film may diffuse into the lower silicon atom-containing film.
  • the acid is supplied from the silicon atom-containing film side so as to eliminate the acid deficiency of the resist film, and as a result, a good resist pattern shape can be obtained.
  • the silicon atom-containing compound (A) contained contains an acid dissociable group, the acid dissociable group is dissociated by the action of the acid generated from the acid generator in the silicon atom-containing film to be formed.
  • the silicon atom-containing film can be formed into a desired pattern shape.
  • the acid generator examples include a photoacid generator and a thermal acid generator.
  • the photoacid generator for example, Triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium 2- (adamantan-1-ylcarbonyloxy) -1,1,3,3,3-pentafluoropropane-1-sulfonate, triphenylsulfonium norbornane sultone-2-yloxy Carbonyl difluoromethanesulfonate, triphenylsulfonium piperidin-1-ylsulfonyl-1,1,2,2,3,3-hexafluoropropane-1-sulfonate, triphenylsulfonium adamantane-1-yloxycarbonyldifluoromethanesulfonate, 4 -Cyclohexylphenyldiphenylsulfonium camphorsulfonate, 4-methanesul
  • Iodonium salts such as diphenyliodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium nonafluoro-n-butanesulfonate, 4-methoxyphenylphenyliodonium camphorsulfonate Etc.
  • the content of the acid generator is preferably 0.1 to 30 parts by mass, and more preferably 0.5 to 20 parts by mass with respect to 100 parts by mass of the silicon atom-containing compound (A). By making content of the said acid generator into the said range, the above-mentioned pattern shape can be made more favorable.
  • As said acid generator 1 type (s) or 2 or more types can be used.
  • the composition for forming the lower layer film may contain a surfactant.
  • substrate etc. can be improved because the said composition for lower layer film formation contains surfactant.
  • content of the said surfactant it is 2 mass parts or less normally with respect to 100 mass parts of silicon atom containing compounds (A).
  • composition for forming the lower layer film can be prepared, for example, by mixing the silicon atom-containing compound (A), the crosslinking accelerator (B) and the like at a predetermined ratio in the solvent (C).
  • Solid content By baking 0.5 g of the polysiloxane solution at 250 ° C. for 30 minutes, the mass of the solid content relative to 0.5 g of the polysiloxane solution was measured, and the solid content concentration of the polysiloxane solution was determined.
  • the oxalic acid aqueous solution was dripped slowly, and it was made to react at 60 degreeC for 4 hours.
  • the flask containing the reaction solution was allowed to cool and then set in an evaporator, and methanol produced by the reaction was removed to obtain 97.3 g of a solution containing polysiloxane (A-1).
  • the solid content concentration of the resulting solution containing polysiloxane (A-1) was 18% by mass as measured by a firing method.
  • the Mw of polysiloxane (A-1) was 2,000.
  • composition for forming lower layer film ⁇ Preparation of composition for forming lower layer film> Regarding the crosslinking accelerator (B) and the solvent (C) constituting the composition for forming the lower layer film other than the polysiloxane (A) (polysiloxanes (A-1) to (A-11)) obtained in the above synthesis examples It is shown below.
  • Example 1 2.00 parts by mass of the solution containing the polysiloxane (A-1) obtained in Synthesis Example 1 and 0.05 part by mass of the crosslinking accelerator (B-1) were mixed with 97.95 parts by mass of the solvent (C-1). Then, the resulting solution was filtered through a filter having a pore size of 0.2 ⁇ m to obtain a composition for forming an underlayer film (J-1) of Example 1.
  • Examples 2 to 19 and Comparative Examples 1 to 3 Except for using the components of the types and amounts shown in Table 2 below, the compositions for forming the underlayer films (J-2) to (J) of Examples 2 to 19 and Comparative Examples 1 to 3 were the same as Example 1. -19) and (CJ-1) to (CJ-3) were prepared. “-” In Table 2 indicates that the corresponding component was not used.
  • the obtained lower layer film-forming composition was applied onto a silicon wafer by a spin coating method, and the lower layer film was formed by heating in a hot plate at 220 ° C. for 1 minute in the air. .
  • the thickness of the obtained lower layer film was 30 nm when measured with a film thickness measuring device (M-2000D, manufactured by JA Woollam).
  • phase-separated structure by self-organization A polystyrene and polymethyl methacrylate diblock copolymer was applied to the above-mentioned lower layer film to form a coating film having a thickness of 40 nm.
  • the membrane was heated at 220 ° C. for 30 minutes under nitrogen to form a phase separation structure by self-assembly.
  • the phase separation structure thus formed was observed using a length measuring SEM (S-4800, manufactured by Hitachi, Ltd.), and the hexagonal cylinder shape was observed. In the range of 300 nm ⁇ 300 nm, “A” was evaluated when the hexagonal cylinder shape could be observed 50% or more, and “B” was evaluated when the hexagonal cylinder shape could be observed less than 50%.
  • an underlayer film that can be easily formed and removed is formed, and a phase separation structure by self-assembly is satisfactorily formed by the underlayer film. And thus an excellent pattern can be formed. Therefore, they can be suitably used for lithography processes in the manufacture of various electronic devices such as semiconductor devices and liquid crystal devices that are required to be further miniaturized.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)

Abstract

La présente invention concerne un procédé de lithographie auto-organisé comprenant : une étape consistant à former, en utilisant un composant comprenant un composé contenant des atomes de silicium, un film contenant des atomes de silicium pour lequel l'angle de contact statique de l'eau pure n'excède pas 70° ; une étape consistant à déposer, sur ledit film contenant des atomes de silicium, un film auto-organisé ayant une structure à phases séparées ; et une étape consistant à retirer certaines phases au moins du film auto-organisé. En tant que composé contenant des atomes de silicium, on utilisera de préférence un polysiloxane. En tant que polysiloxane, on utilisera de préférence un produit de condensation hydrolytique d'un composant comprenant le composé de silane hydrolysable représenté par la formule (i) ci-dessous.
PCT/JP2014/060231 2013-05-21 2014-04-08 Procédé de lithographie auto-organisé et composition de formation de film de sous-couche WO2014188806A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013107428 2013-05-21
JP2013-107428 2013-05-21

Publications (1)

Publication Number Publication Date
WO2014188806A1 true WO2014188806A1 (fr) 2014-11-27

Family

ID=51933372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/060231 WO2014188806A1 (fr) 2013-05-21 2014-04-08 Procédé de lithographie auto-organisé et composition de formation de film de sous-couche

Country Status (1)

Country Link
WO (1) WO2014188806A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016161886A (ja) * 2015-03-04 2016-09-05 Jsr株式会社 下層膜形成用組成物、下層膜の形成方法及び自己組織化リソグラフィープロセス

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008036491A (ja) * 2006-08-03 2008-02-21 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法及びモールド
JP2012174984A (ja) * 2011-02-23 2012-09-10 Toshiba Corp パターン形成方法
JP2013083963A (ja) * 2011-09-29 2013-05-09 Jsr Corp パターン形成方法及びポリシロキサン組成物
WO2013146600A1 (fr) * 2012-03-27 2013-10-03 日産化学工業株式会社 Composition filmogène de sous-couche pour films auto-assemblés
JP2013232501A (ja) * 2012-04-27 2013-11-14 Shin Etsu Chem Co Ltd パターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008036491A (ja) * 2006-08-03 2008-02-21 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法及びモールド
JP2012174984A (ja) * 2011-02-23 2012-09-10 Toshiba Corp パターン形成方法
JP2013083963A (ja) * 2011-09-29 2013-05-09 Jsr Corp パターン形成方法及びポリシロキサン組成物
WO2013146600A1 (fr) * 2012-03-27 2013-10-03 日産化学工業株式会社 Composition filmogène de sous-couche pour films auto-assemblés
JP2013232501A (ja) * 2012-04-27 2013-11-14 Shin Etsu Chem Co Ltd パターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016161886A (ja) * 2015-03-04 2016-09-05 Jsr株式会社 下層膜形成用組成物、下層膜の形成方法及び自己組織化リソグラフィープロセス

Similar Documents

Publication Publication Date Title
JP6065497B2 (ja) パターン形成方法及びポリシロキサン組成物
TWI416262B (zh) A silicon film-forming composition, a silicon-containing film, and a pattern-forming method
JP5835123B2 (ja) パターン形成用自己組織化組成物及びパターン形成方法
JP6060590B2 (ja) レジストパターン形成方法
WO2013073505A1 (fr) Composition d&#39;auto-organisation pour la formation de motif et procédé de formation de motif
WO2012033004A1 (fr) Procédé de formation de motif de réserve
JP6394042B2 (ja) パターン形成用組成物及びパターン形成方法
US20150252216A1 (en) Pattern-forming method and directed self-assembling composition
WO2012008538A1 (fr) Composition de polysiloxane et procédé de formation de motif
JP6511927B2 (ja) シリコン含有膜形成用組成物、パターン形成方法及びポリシロキサン化合物
US9753369B2 (en) Polymer-containing developer
JP5725151B2 (ja) 多層レジストプロセス用シリコン含有膜形成組成物及びパターン形成方法
WO2016111210A1 (fr) Composition pour former un film contenant du silicium et procédé de formation de motif utilisant ladite composition
JP6966709B2 (ja) パターン形成用組成物及びパターン形成方法
WO2014188806A1 (fr) Procédé de lithographie auto-organisé et composition de formation de film de sous-couche
TWI666264B (zh) 含矽膜形成用組成物、圖型形成方法及聚矽氧烷化合物
JP2012190050A (ja) レジストパターン形成方法
JP5494725B2 (ja) レンズの形成方法、レンズおよびネガ型感光性組成物
JP6094311B2 (ja) パターン形成方法
WO2014171446A1 (fr) Composition destinée à être utilisée dans un procédé de lithographie à auto-assemblage
JP5907009B2 (ja) パターン形成方法
KR101959570B1 (ko) 레지스트 패턴 형성 방법 및 레지스트 하층막 형성용 조성물
JP2015139875A (ja) パターン形成用自己組織化組成物及びパターン形成方法
JP2018055068A (ja) 多層レジストプロセス用膜形成材料及びパターン形成方法
JP2010090248A (ja) 多層レジストプロセス用シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14800966

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14800966

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP