JPWO2011078018A1 - 磁気抵抗効果素子及びそれを用いた磁気ランダムアクセスメモリ - Google Patents
磁気抵抗効果素子及びそれを用いた磁気ランダムアクセスメモリ Download PDFInfo
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- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
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Abstract
Description
すなわち、磁壁移動層10は少なくとも一つの磁壁12(12a又は12b)を有し、その磁壁12の位置は磁化自由領域13の磁化方向に対応している。従って、磁壁移動層10は、その磁壁12の位置に対応してデータを記憶している。
きる。すなわち、磁壁移動層10の異方性磁界の値をその材料の本来の値から低下させることで、磁壁移動を起こす書き込み電流の値を更に低減することができる。
Claims (7)
- 垂直磁気異方性を有する強磁性体で形成された磁壁移動層と、
前記磁壁移動層上に設けられ、非磁性体で形成されたスペーサ層と、
前記スペーサ層上に設けられ、強磁性体で形成され、磁化が固定された参照層と
を具備し、
前記磁壁移動層は、少なくとも一つの磁壁を有し、前記磁壁の位置に対応して情報を記憶し、
前記磁壁移動層の異方性磁界は、前記磁壁移動層が垂直磁気異方性を保ち得る値より大きく、前記磁壁移動層の強磁性体本来の異方性磁界の値より小さい
磁気抵抗効果素子。 - 請求項1に記載の磁気抵抗効果素子において、
前記磁壁移動層は、垂直磁気異方性を有するCo膜とNi膜との第1積層膜で形成され、
前記第1積層膜の(111)配向の度合いは、前記第1積層膜が垂直磁気異方性を保ち得る配向度より大きく、100%より小さい
磁気抵抗効果素子。 - 垂直磁気異方性を有するCo膜とNi膜との第1積層膜で形成された磁壁移動層と、
前記磁壁移動層上に設けられ、非磁性体で形成されたスペーサ層と、
前記スペーサ層上に設けられ、強磁性体で形成され、磁化が固定された参照層と
を具備し、
前記磁壁移動層は、少なくとも一つの磁壁を有し、前記磁壁の位置に対応して情報を記憶し、
前記磁壁移動層の異方性磁界は、8kOeより大きく、15kOeより小さい
磁気抵抗効果素子。 - 請求項3に記載の磁気抵抗効果素子において、
前記第1積層膜の(111)配向の度合いは、前記第1積層膜が垂直磁気異方性を保ち得る配向度より大きく、100%より小さい
磁気抵抗効果素子。 - 請求項2又は4に記載の磁気抵抗効果素子において、
前記第1積層膜下に設けられ、Pt膜とTa膜との第2積層膜で形成された下地層を更に具備し、
前記第1積層膜に接する前記Pt膜の(111)配向の度合いは、前記第1積層膜が垂直磁気異方性を保ち得る配向度より大きく、100%より小さい
磁気抵抗効果素子。 - 請求項2又は4に記載の磁気抵抗効果素子において、
前記第1積層膜下に設けられ、Pt膜とTa膜との第2積層膜で形成された下地層を更に具備し、
前記第1積層膜に接する前記Pt膜は、長周期構造を有する
磁気抵抗効果素子。 - 請求項1乃至6のいずれか一項に記載の磁気抵抗効果素子を磁気メモリセルとして用いた磁気ランダムアクセスメモリ。
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JP5483025B2 (ja) * | 2009-01-30 | 2014-05-07 | 日本電気株式会社 | 磁気メモリ素子、磁気メモリ |
KR20130017267A (ko) * | 2011-08-10 | 2013-02-20 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
JP6824504B2 (ja) | 2015-03-06 | 2021-02-03 | 株式会社BlueSpin | 磁気メモリ、磁気メモリへのデータ書き込み方法及び半導体装置 |
JP2016194964A (ja) | 2015-04-01 | 2016-11-17 | 株式会社BlueSpin | 磁気メモリ及びその動作方法 |
CN108666339B (zh) * | 2017-03-28 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 磁性随机存储器及其存储单元的制造方法 |
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US10910435B2 (en) | 2019-03-27 | 2021-02-02 | International Business Machines Corporation | Stackable symmetrical operation memory bit cell structure with bidirectional selectors |
JP7419729B2 (ja) * | 2019-10-01 | 2024-01-23 | Tdk株式会社 | 磁壁移動素子及び磁気記録アレイ |
EP4156275A1 (en) | 2021-09-22 | 2023-03-29 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | 1-bit 3-terminal racetrack array with integrated magnetic tunnel junction (mtj) |
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CN101114694A (zh) * | 2002-11-26 | 2008-01-30 | 株式会社东芝 | 磁单元和磁存储器 |
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JP5598697B2 (ja) | 2007-06-25 | 2014-10-01 | 日本電気株式会社 | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ |
JP4874884B2 (ja) * | 2007-07-11 | 2012-02-15 | 株式会社東芝 | 磁気記録素子及び磁気記録装置 |
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