JPWO2011068197A1 - 光電変換装置及び光電変換装置の製造方法 - Google Patents
光電変換装置及び光電変換装置の製造方法 Download PDFInfo
- Publication number
- JPWO2011068197A1 JPWO2011068197A1 JP2011544330A JP2011544330A JPWO2011068197A1 JP WO2011068197 A1 JPWO2011068197 A1 JP WO2011068197A1 JP 2011544330 A JP2011544330 A JP 2011544330A JP 2011544330 A JP2011544330 A JP 2011544330A JP WO2011068197 A1 JPWO2011068197 A1 JP WO2011068197A1
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- JP
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- Prior art keywords
- photoelectric conversion
- layer
- type semiconductor
- conversion unit
- semiconductor layer
- Prior art date
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- Pending
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 441
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 119
- 239000010408 film Substances 0.000 claims abstract description 100
- 239000010409 thin film Substances 0.000 claims abstract description 96
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims description 32
- 238000001069 Raman spectroscopy Methods 0.000 claims description 16
- 238000005755 formation reaction Methods 0.000 description 33
- 229910052739 hydrogen Inorganic materials 0.000 description 29
- 239000001257 hydrogen Substances 0.000 description 27
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 24
- 238000009832 plasma treatment Methods 0.000 description 20
- 238000000151 deposition Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 15
- 238000010248 power generation Methods 0.000 description 15
- 239000012495 reaction gas Substances 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 14
- 150000002431 hydrogen Chemical class 0.000 description 13
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- JGFDZZLUDWMUQH-UHFFFAOYSA-N Didecyldimethylammonium Chemical compound CCCCCCCCCC[N+](C)(C)CCCCCCCCCC JGFDZZLUDWMUQH-UHFFFAOYSA-N 0.000 description 9
- 239000003085 diluting agent Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 6
- 239000013067 intermediate product Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002178 crystalline material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000004675 formic acid derivatives Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009276320 | 2009-12-04 | ||
| JP2009276320 | 2009-12-04 | ||
| PCT/JP2010/071668 WO2011068197A1 (ja) | 2009-12-04 | 2010-12-03 | 光電変換装置及び光電変換装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2011068197A1 true JPWO2011068197A1 (ja) | 2013-04-18 |
Family
ID=44115043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011544330A Pending JPWO2011068197A1 (ja) | 2009-12-04 | 2010-12-03 | 光電変換装置及び光電変換装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2011068197A1 (zh) |
| TW (1) | TW201133886A (zh) |
| WO (1) | WO2011068197A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235680A (ja) * | 1985-08-09 | 1987-02-16 | Toa Nenryo Kogyo Kk | アモルフアスシリコン太陽電池およびその製造法 |
| JP2001284612A (ja) * | 2000-03-30 | 2001-10-12 | Sanyo Electric Co Ltd | 光起電力装置 |
| EP1475843A2 (en) * | 2003-05-09 | 2004-11-10 | Canon Kabushiki Kaisha | Photovoltaic element and method of forming photovoltaic element |
| EP1906456A1 (en) * | 2000-10-04 | 2008-04-02 | Kaneka Corporation | Method of manufacturing tandem thin-film solar cell |
| WO2008089043A2 (en) * | 2007-01-18 | 2008-07-24 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
-
2010
- 2010-12-03 TW TW099142214A patent/TW201133886A/zh unknown
- 2010-12-03 WO PCT/JP2010/071668 patent/WO2011068197A1/ja active Application Filing
- 2010-12-03 JP JP2011544330A patent/JPWO2011068197A1/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235680A (ja) * | 1985-08-09 | 1987-02-16 | Toa Nenryo Kogyo Kk | アモルフアスシリコン太陽電池およびその製造法 |
| JP2001284612A (ja) * | 2000-03-30 | 2001-10-12 | Sanyo Electric Co Ltd | 光起電力装置 |
| EP1906456A1 (en) * | 2000-10-04 | 2008-04-02 | Kaneka Corporation | Method of manufacturing tandem thin-film solar cell |
| EP1475843A2 (en) * | 2003-05-09 | 2004-11-10 | Canon Kabushiki Kaisha | Photovoltaic element and method of forming photovoltaic element |
| WO2008089043A2 (en) * | 2007-01-18 | 2008-07-24 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011068197A1 (ja) | 2011-06-09 |
| TW201133886A (en) | 2011-10-01 |
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