JPWO2009090979A1 - キャパシタ、半導体装置、およびこれらの作製方法 - Google Patents

キャパシタ、半導体装置、およびこれらの作製方法 Download PDF

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Publication number
JPWO2009090979A1
JPWO2009090979A1 JP2009550031A JP2009550031A JPWO2009090979A1 JP WO2009090979 A1 JPWO2009090979 A1 JP WO2009090979A1 JP 2009550031 A JP2009550031 A JP 2009550031A JP 2009550031 A JP2009550031 A JP 2009550031A JP WO2009090979 A1 JPWO2009090979 A1 JP WO2009090979A1
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Japan
Prior art keywords
capacitor
layer
film
dielectric
material layer
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Withdrawn
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JP2009550031A
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English (en)
Japanese (ja)
Inventor
有門　経敏
経敏 有門
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2009090979A1 publication Critical patent/JPWO2009090979A1/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2009550031A 2008-01-18 2009-01-15 キャパシタ、半導体装置、およびこれらの作製方法 Withdrawn JPWO2009090979A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008009546 2008-01-18
JP2008009546 2008-01-18
PCT/JP2009/050425 WO2009090979A1 (ja) 2008-01-18 2009-01-15 キャパシタ、半導体装置、およびこれらの作製方法

Publications (1)

Publication Number Publication Date
JPWO2009090979A1 true JPWO2009090979A1 (ja) 2011-05-26

Family

ID=40885367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009550031A Withdrawn JPWO2009090979A1 (ja) 2008-01-18 2009-01-15 キャパシタ、半導体装置、およびこれらの作製方法

Country Status (5)

Country Link
JP (1) JPWO2009090979A1 (zh)
KR (1) KR20100084677A (zh)
CN (1) CN101919044A (zh)
TW (1) TW200947671A (zh)
WO (1) WO2009090979A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129716B2 (en) * 2010-03-18 2012-03-06 National Tsing Hua University OTFT and MIM capacitor using silk protein as dielectric material and methods for manufacturing the same
JP2011228462A (ja) * 2010-04-19 2011-11-10 Taiyo Yuden Co Ltd 薄膜キャパシタ
JP2012104551A (ja) 2010-11-08 2012-05-31 Elpida Memory Inc 半導体記憶装置及びその製造方法
CN103745828B (zh) * 2013-11-25 2016-09-28 大连天壹电子有限公司 干式积层陶瓷电容器的漏电流特性改善方法
KR102494126B1 (ko) 2016-04-26 2023-02-02 삼성전자주식회사 커패시터를 포함하는 반도체 소자
US20220181433A1 (en) * 2020-12-09 2022-06-09 Intel Corporation Capacitors with built-in electric fields
CN113410055B (zh) * 2021-05-21 2022-10-25 嘉兴学院 一种低漏导高耐压固态电介质薄膜电容器及其制备方法
US12021113B2 (en) 2021-10-14 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Amorphous bottom electrode structure for MIM capacitors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347391A (ja) * 1992-06-16 1993-12-27 Seiko Epson Corp 強誘電体記憶装置
US5663088A (en) * 1995-05-19 1997-09-02 Micron Technology, Inc. Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer
JP3986859B2 (ja) * 2002-03-25 2007-10-03 富士通株式会社 薄膜キャパシタ及びその製造方法
JP4977400B2 (ja) * 2006-05-09 2012-07-18 日本電気株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
TW200947671A (en) 2009-11-16
WO2009090979A1 (ja) 2009-07-23
KR20100084677A (ko) 2010-07-27
CN101919044A (zh) 2010-12-15

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