JPWO2009028110A1 - 多層配線基板および半導体装置 - Google Patents
多層配線基板および半導体装置 Download PDFInfo
- Publication number
- JPWO2009028110A1 JPWO2009028110A1 JP2009529958A JP2009529958A JPWO2009028110A1 JP WO2009028110 A1 JPWO2009028110 A1 JP WO2009028110A1 JP 2009529958 A JP2009529958 A JP 2009529958A JP 2009529958 A JP2009529958 A JP 2009529958A JP WO2009028110 A1 JPWO2009028110 A1 JP WO2009028110A1
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- wiring board
- multilayer wiring
- resin
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 90
- 239000000463 material Substances 0.000 claims abstract description 182
- 239000004020 conductor Substances 0.000 claims abstract description 167
- 238000004458 analytical method Methods 0.000 claims abstract description 8
- 230000000930 thermomechanical effect Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 374
- 229920005989 resin Polymers 0.000 claims description 127
- 239000011347 resin Substances 0.000 claims description 127
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 52
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims description 43
- 229920000647 polyepoxide Polymers 0.000 claims description 33
- 239000003822 epoxy resin Substances 0.000 claims description 32
- 239000005011 phenolic resin Substances 0.000 claims description 32
- 239000011162 core material Substances 0.000 claims description 16
- 239000011256 inorganic filler Substances 0.000 claims description 16
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 16
- 239000011247 coating layer Substances 0.000 claims description 15
- 230000009477 glass transition Effects 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 11
- 239000003365 glass fiber Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910000679 solder Inorganic materials 0.000 description 22
- 238000005219 brazing Methods 0.000 description 20
- 229910052802 copper Inorganic materials 0.000 description 19
- 239000010949 copper Substances 0.000 description 19
- 229920003986 novolac Polymers 0.000 description 19
- 238000011156 evaluation Methods 0.000 description 18
- 239000011521 glass Substances 0.000 description 14
- 239000002966 varnish Substances 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- 239000002345 surface coating layer Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000835 fiber Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 239000000470 constituent Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 229920001187 thermosetting polymer Polymers 0.000 description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000004305 biphenyl Substances 0.000 description 7
- 235000010290 biphenyl Nutrition 0.000 description 7
- 239000007822 coupling agent Substances 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 239000005350 fused silica glass Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229920001568 phenolic resin Polymers 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- 229920001342 Bakelite® Polymers 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229920001225 polyester resin Polymers 0.000 description 4
- 239000004645 polyester resin Substances 0.000 description 4
- 229920003987 resole Polymers 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- 239000004760 aramid Substances 0.000 description 3
- 229920003235 aromatic polyamide Polymers 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000004843 novolac epoxy resin Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000002759 woven fabric Substances 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000002655 kraft paper Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000006839 xylylene group Chemical group 0.000 description 2
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical compound C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical group C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 235000019498 Walnut oil Nutrition 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N glycolonitrile Natural products N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000000944 linseed oil Substances 0.000 description 1
- 235000021388 linseed oil Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 239000002383 tung oil Substances 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 239000008170 walnut oil Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
- H05K3/4691—Rigid-flexible multilayer circuits comprising rigid and flexible layers, e.g. having in the bending regions only flexible layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
- H05K3/4617—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination characterized by laminating only or mainly similar single-sided circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Laminated Bodies (AREA)
Abstract
Description
第1の絶縁層と第1の導体層とを有し、可撓性を有する第1の基材と、第1の基材の少なくとも片面に接合され、第2の絶縁層と第2の導体層とを有し、前記第1の基材よりも剛性の高い第2の基材とを有するリジッド部と、
前記リジッド部から連続して延長された前記第1の基材で構成されたフレキシブル部とを有し、
前記第2の絶縁層は、20℃以上、JIS C 6481に準拠した動的粘弾性装置を用いて測定される第2の絶縁層のガラス転移温度Tg2[℃]以下でのJIS C 6481に準拠した熱機械分析によって測定される面方向の熱膨張係数が13ppm/℃以下であり、かつ、20〜前記Tg2[℃]でのJIS C 6481に準拠した熱機械分析によって測定される厚さ方向の熱膨張係数が20ppm/℃以下であることを特徴とする。
前記第1の導体層と前記第2の導体層とは、前記導体ポストを介して導通しているものであることが好ましい。
本発明の多層配線基板と、前記多層配線基板の前記第2の導体層の所定の部位に電気的に接続されている半導体素子を有することを特徴とする。
[第1実施形態]
まず、本発明の第1実施形態について説明する。
まず、リジッド部2について説明する。
第1の基材4は、第1の絶縁層41と、その両面に設けられた第1の導体層42とで構成されている。また、第1の基材4は、可撓性を有するものである。
第2の基材5Aは、第1の基材4の上面に接合して設けられている。また、第2の基材5Bは、第1の基材4の下面に接合して設けられている。
<フレキシブル部>
次に、フレキシブル部3について説明する。
<多層配線基板の製造方法>
次に、多層配線基板の製造方法の一例について説明する。
<半導体装置>
次に、半導体装置100について簡単に説明する。
[第2実施形態]
次に、本発明の第2実施形態について説明する。
まず、第1の絶縁層41aを用意し、第1の絶縁層41aに導体ポスト6を設ける。また、第1の絶縁層41aの両面に第1の導体層42を設ける(2a)。これらの形成方法は、前述した第1実施形態における第1の基材4の製造方法と同様である。
一方、第2の基材5C、5Dを製造する。第2の基材5Cと第2の基材5Dの製造方法は同様であるので、以下、代表して、第2の基材5Cの製造方法について説明する。
最後に、上述したような工程で得られた第1の基材4A、第2の基材5C、5Dを積層し、リジッド部2とフレキシブル部3とを有する多層配線基板1を得る(2i、2j)。
[1]多層配線基板および半導体装置の製造
(実施例1)
[1−1]樹脂ワニスの調製
有機溶剤としてのメチルエチルケトンに、下記に示す各樹脂材料、無機充填材、カップリング剤を固形分50重量%になる様に所定量加え、高速攪拌機を用いて10分攪拌して、有機溶剤中に樹脂材料のプレポリマーおよび無機充填材が分散および/または溶解した樹脂ワニスを得た。
上述の樹脂ワニスをガラス織布(WEA−1035、厚さ:28μm、日東紡績製)に含浸し、120℃の加熱炉で2分間乾燥してワニス固形分(プリプレグ中に樹脂とシリカの占める成分)が約50wt%のプリプレグを得た。
厚さ:18μmの銅箔(金属層)が、厚さ:25μmのポリイミドフィルム(第1の絶縁層)の両面に付された第1の積層体(2層両面銅張積層板、新日鐵化学製、エスパネックスSB−18−25−18FR)を用意した。この第1の積層体にエッチングを行うことにより、金属層の所定の部位のみを残した第1の導体層(導体回路)を形成した。第1の絶縁層上における第1の導体層の面積率は、50%とした。次に、積層体の所定部位に、ドリルによって貫通孔を形成し、貫通孔に銅を材料としたメッキ処理を行い、導体ポストを設けた。これにより、第1の基材を得た。
作成した多層配線基板に、フリップチップボンダーを用いて、鉛フリーの半田(組成:Sn-3.5Ag、融点:221℃、熱膨張率:22ppm/℃、弾性率44GPa)を位置決めして付与し、半導体素子(7mm角、192端子)と仮接合した後、リフロー炉(リフロー条件:最高温度260℃、最低温度183℃で60秒のIRリフロー)に通して半田バンプを接合させ、第3図に示すような半導体装置(評価用パッケージ)を得た。
第2の絶縁層の熱膨張係数、ガラス転移温度および第2の基材の貯蔵弾性率を評価するため、評価用の第2の基材を製造した。
(実施例2)
樹脂ワニスの配合を表1に示すように変更した以外は、実施例1と同様にして半導体装置および評価用の第2の基材を製造した。
(実施例3)
[第1の基材製造工程]
厚さ:18μmの銅箔(金属層)が、厚さ:25μmのポリイミドフィルム(第1の絶縁層)の両面に付された第1の積層体(2層両面銅張積層板、新日鐵化学製、エスパネックスSB−18−25−18FR)を用意した。この第1の積層体にエッチングを行うことにより、金属層の所定の部位のみを残した第1の導体層(導体回路)を形成した。第1の絶縁層上における第1の導体層の面積率は、50%とした。次に、積層体の所定部位に、ドリルによって貫通孔を形成し、貫通孔に銅を材料としたメッキ処理を行い、導体ポストを設けた。
[第2の基材製造工程]
まず、実施例1で得られたプリプレグを、成形後に厚さが80μmとなるように所定枚数重ね、圧力4MPa、温度200℃で2時間加熱加圧成形することによって第2の絶縁層を得た。
得られた第2の基材2つを第1の基材の両面に、位置合わせ用のピンガイド付き治具を用いてレイアップ(積層)した積層体を作成した。この際、第1の基材のろう材層と、第2の絶縁層の突起状端子とが対応するような位置となるように積層した。その後、この積層体に対し、真空式加圧ラミネーターで温度:130℃、圧力:0.6MPaの条件で30秒仮接着処理を行い、その後、油圧式プレスで温度:250℃、圧力:1.0MPaの条件で3分間プレス処理を行った。これにより、導体ポストの金属被膜と第1の基材上のろう材層の半田とが溶融接合し、第1の導体層と第2の導体層とを接続する金属被覆層が形成された。
(比較例1)
樹脂ワニスの配合を表1に示すように変更した以外は、実施例1と同様にして半導体装置および評価用の第2の基材を製造した。
(比較例2)
樹脂ワニスの配合を表1に示すように変更した以外は、実施例1と同様にして半導体装置および評価用の第2の基材を製造した。
(比較例3)
プリプレグの代わりに、ポリイミド(厚さ:80μm、鐘淵化学工業製、アピカルNPI)を使用した以外は、実施例1と同様にして半導体装置および評価用の第2の基材を製造した。このようにして得られた半導体装置の第2の基材および評価用の第2の基材は、可撓性を有するものであった。すなわち、半導体装置は、多層配線基板としてフレキシブルプリント基板を有するものとした。
[2]物性測定および評価
各実施例および各比較例で得られた半導体装置および評価用の第2の基材について、次のような物性測定および評価を行った。
厚さ:1.6mmの評価用の第2の基材を全面エッチングし、得られた積層板(第2の絶縁層)から2mm×2mmのテストピースを切り出し、TMA法(熱機械分析法)を用いて厚さ方向および面方向の線膨張係数を5℃/分で測定した。なお、線膨張係数(熱膨張係数)の測定温度範囲は、20℃から第2の絶縁層のガラス転移温度までとした。
厚さ:0.8mmの評価用の第2の基材を全面エッチングし、得られた積層板(第2の絶縁層)から10mm×60mmのテストピースを切り出し、TAインスツルメント社製動的粘弾性測定装置DMA983を用いて3℃/分で昇温し、tanδのピーク位置をガラス転移温度とした。
厚さ:0.8mmの評価用の第2の基材を全面エッチングし、得られた積層板(第2の絶縁層)から10mm×60mmのテストピースを切り出し、TAインスツルメント社製動的粘弾性測定装置DMA983を用いて3℃/分で昇温し、各温度環境での弾性率の値を得た。
各実施例および各比較例にて得られた半導体装置(評価用パッケージ)を用いて、冷熱サイクル試験を行う事で鉛フリー半田バンプの保護性の比較評価を行った。半導体装置10個を用い、冷熱サイクル(冷却状態:−55℃、加熱状態:125℃で500サイクル)処理した。冷熱サイクル処理後、半導体装置について導通試験を行い、すべてのバンプが導通したものを良品パッケージとしてカウントした。試験に用いた半導体装置の個数(10個)に対する良品パッケージの個数を求め、半導体素子の実装信頼性の指標とした。
Claims (13)
- 第1の絶縁層と第1の導体層とを有し、可撓性を有する第1の基材と、第1の基材の少なくとも片面に接合され、第2の絶縁層と第2の導体層とを有し、前記第1の基材よりも剛性の高い第2の基材とを有するリジッド部と、
前記リジッド部から連続して延長された前記第1の基材で構成されたフレキシブル部とを有し、
前記第2の絶縁層は、20℃以上、JIS C 6481に準拠した動的粘弾性装置を用いて測定される第2の絶縁層のガラス転移温度Tg2[℃]以下でのJIS C 6481に準拠した熱機械分析によって測定される面方向の熱膨張係数が13ppm/℃以下であり、かつ、20〜前記Tg2[℃]でのJIS C 6481に準拠した熱機械分析によって測定される厚さ方向の熱膨張係数が20ppm/℃以下であることを特徴とする多層配線基板。 - 前記第2の絶縁層は、前記Tg2[℃]が、200〜280℃である請求の範囲第1項に記載の多層配線基板。
- 前記リジッド部において、前記第1の基材の両面側にそれぞれ前記第2の基材を有する請求の範囲第1項に記載の多層配線基板。
- 前記リジッド部は、前記第1の絶縁層を1〜4層有し、前記第2の絶縁層を2〜10層有している請求の範囲第1項に記載の多層配線基板。
- 前記第1の基材の平均厚さをX[μm]、前記第2の基材の平均厚さをY[μm]としたとき、1.5≦Y/X≦10である請求の範囲第1項に記載の多層配線基板。
- 前記第2の基材の平均厚さをY[μm]、前記第2の基材の動的粘弾性測定にて得られる260℃での引張り弾性率をZ[GPa]としたとき、530≦Y・Z≦4300である請求の範囲第1項に記載の多層配線基板。
- 前記第2の絶縁層は、主として、繊維状のコア材と、樹脂材料と、無機充填材とで構成されたものである請求の範囲第1項に記載の多層配線基板。
- 前記樹脂材料は、シアネート樹脂とエポキシ樹脂とを含み、前記樹脂材料中の前記シアネート樹脂の含有率をA[wt%]、前記樹脂材料中の前記エポキシ樹脂の含有率をB[wt%]としたとき、0.1≦B/A≦1.0である請求の範囲第7項に記載の多層配線基板。
- 前記樹脂材料は、シアネート樹脂とフェノール樹脂とを含み、前記樹脂材料中の前記シアネート樹脂の含有率をA[wt%]、前記樹脂材料中の前記フェノール樹脂の含有率をC[wt%]としたとき、0.1≦C/A≦1.0である請求の範囲第7項に記載の多層配線基板。
- 前記コア材は、主としてガラス繊維で構成されている請求の範囲第7項に記載の多層配線基板。
- 前記第2の絶縁層は、前記第2の絶縁層を厚さ方向に貫通する貫通孔と、前記貫通孔内に形成された導体ポストとを有し、
前記第1の導体層と前記第2の導体層とは、前記導体ポストを介して導通しているものである請求の範囲第1項に記載の多層配線基板。 - 前記導体ポストは、一端が第2の導体層に電気的に接続され他端が第2の絶縁層から突出した突起状端子と、前記突起状端子の他端を覆い前記第1の導体層に電気的に接続された金属被覆層とを有する請求の範囲第11項に記載の多層配線基板。
- 請求の範囲第1項に記載の多層配線基板と、前記多層配線基板の前記第2の導体層の所定の部位に電気的に接続されている半導体素子を有することを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009529958A JP5071481B2 (ja) | 2007-08-24 | 2007-09-13 | 多層配線基板および半導体装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007219057 | 2007-08-24 | ||
JP2007219057 | 2007-08-24 | ||
JP2009529958A JP5071481B2 (ja) | 2007-08-24 | 2007-09-13 | 多層配線基板および半導体装置 |
PCT/JP2007/067872 WO2009028110A1 (ja) | 2007-08-24 | 2007-09-13 | 多層配線基板および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2009028110A1 true JPWO2009028110A1 (ja) | 2010-11-25 |
JP5071481B2 JP5071481B2 (ja) | 2012-11-14 |
Family
ID=40386854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009529958A Expired - Fee Related JP5071481B2 (ja) | 2007-08-24 | 2007-09-13 | 多層配線基板および半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110120754A1 (ja) |
EP (1) | EP2180772A4 (ja) |
JP (1) | JP5071481B2 (ja) |
KR (1) | KR101115108B1 (ja) |
CN (1) | CN101785373B (ja) |
TW (1) | TWI442859B (ja) |
WO (1) | WO2009028110A1 (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5240293B2 (ja) * | 2009-04-02 | 2013-07-17 | 株式会社村田製作所 | 回路基板 |
JP2011096900A (ja) * | 2009-10-30 | 2011-05-12 | Fujitsu Ltd | 導電体およびプリント配線板並びにそれらの製造方法 |
US20110147069A1 (en) * | 2009-12-18 | 2011-06-23 | International Business Machines Corporation | Multi-tiered Circuit Board and Method of Manufacture |
JP5964627B2 (ja) * | 2011-04-18 | 2016-08-03 | 日東シンコー株式会社 | 電気絶縁用立体形状物及び電気絶縁性シート材 |
US8780576B2 (en) | 2011-09-14 | 2014-07-15 | Invensas Corporation | Low CTE interposer |
US9412727B2 (en) | 2011-09-20 | 2016-08-09 | Semprius, Inc. | Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion |
US8895864B2 (en) * | 2012-03-30 | 2014-11-25 | Nokia Corporation | Deformable apparatus and method |
WO2014088974A1 (en) | 2012-12-03 | 2014-06-12 | Flextronics Ap, Llc | Driving board folding machine |
CN203151864U (zh) * | 2013-03-05 | 2013-08-21 | 奥特斯(中国)有限公司 | 印制电路板 |
CN104103531A (zh) * | 2013-04-09 | 2014-10-15 | 宏启胜精密电子(秦皇岛)有限公司 | 封装结构及其制作方法 |
US9338915B1 (en) * | 2013-12-09 | 2016-05-10 | Flextronics Ap, Llc | Method of attaching electronic module on fabrics by stitching plated through holes |
US9560746B1 (en) | 2014-01-24 | 2017-01-31 | Multek Technologies, Ltd. | Stress relief for rigid components on flexible circuits |
KR102292148B1 (ko) * | 2014-03-13 | 2021-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 제작 방법, 및 전자 기기의 제작 방법 |
US9549463B1 (en) | 2014-05-16 | 2017-01-17 | Multek Technologies, Ltd. | Rigid to flexible PC transition |
US20170207193A1 (en) * | 2014-07-20 | 2017-07-20 | X-Celeprint Limited | Apparatus and methods for micro-transfer-printing |
JP6366136B2 (ja) * | 2014-08-01 | 2018-08-01 | 日本化薬株式会社 | エポキシ樹脂組成物、樹脂シート、プリプレグ及び金属張積層板、プリント配線基板 |
EP2991460B1 (en) | 2014-08-29 | 2018-11-21 | Nokia Technologies OY | An apparatus and associated methods for deformable electronics |
CN107078406B (zh) * | 2014-10-31 | 2021-07-23 | 株式会社村田制作所 | 天线模块以及电路模块 |
US20170318670A1 (en) * | 2015-01-13 | 2017-11-02 | Ube Exsymo Co., Ltd. | Flexible laminated board and multilayer circuit board |
US9704821B2 (en) | 2015-08-11 | 2017-07-11 | X-Celeprint Limited | Stamp with structured posts |
JP2018046230A (ja) * | 2016-09-16 | 2018-03-22 | イビデン株式会社 | プリント配線板 |
JP2018046231A (ja) * | 2016-09-16 | 2018-03-22 | イビデン株式会社 | プリント配線板 |
JP7135364B2 (ja) * | 2018-03-23 | 2022-09-13 | 三菱マテリアル株式会社 | 絶縁回路基板、及び、絶縁回路基板の製造方法 |
KR102604152B1 (ko) * | 2018-10-24 | 2023-11-20 | 삼성전기주식회사 | 인쇄회로기판 및 이를 포함하는 디스플레이 장치 |
US10748793B1 (en) | 2019-02-13 | 2020-08-18 | X Display Company Technology Limited | Printing component arrays with different orientations |
WO2020196746A1 (ja) * | 2019-03-26 | 2020-10-01 | 三菱マテリアル株式会社 | 絶縁回路基板 |
TWI701982B (zh) | 2019-05-14 | 2020-08-11 | 欣興電子股份有限公司 | 電路板結構及其製造方法 |
CN111954366B (zh) * | 2019-05-17 | 2022-04-01 | 欣兴电子股份有限公司 | 电路板结构及其制造方法 |
CN112349676B (zh) | 2019-08-06 | 2022-04-05 | 奥特斯奥地利科技与系统技术有限公司 | 半柔性的部件承载件及其制造方法 |
TWI750828B (zh) * | 2019-10-03 | 2021-12-21 | 精材科技股份有限公司 | 晶片封裝體及其製造方法 |
US11062936B1 (en) | 2019-12-19 | 2021-07-13 | X Display Company Technology Limited | Transfer stamps with multiple separate pedestals |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2728694B2 (ja) * | 1987-10-20 | 1998-03-18 | 旭化成工業株式会社 | フレキシブルプリント配線基板 |
US5008496A (en) * | 1988-09-15 | 1991-04-16 | Siemens Aktiengesellschaft | Three-dimensional printed circuit board |
US5206463A (en) * | 1990-07-24 | 1993-04-27 | Miraco, Inc. | Combined rigid and flexible printed circuits and method of manufacture |
US5428190A (en) * | 1993-07-02 | 1995-06-27 | Sheldahl, Inc. | Rigid-flex board with anisotropic interconnect and method of manufacture |
JP3961092B2 (ja) * | 1997-06-03 | 2007-08-15 | 株式会社東芝 | 複合配線基板、フレキシブル基板、半導体装置、および複合配線基板の製造方法 |
US7247381B1 (en) * | 1998-08-13 | 2007-07-24 | Hitachi Chemical Company, Ltd. | Adhesive for bonding circuit members, circuit board, and method of producing the same |
KR100719866B1 (ko) * | 2000-03-27 | 2007-05-21 | 제팬 컴포지트 컴파니 리미티드 | 저열팽창성 적층판 |
JP2002076629A (ja) * | 2000-08-31 | 2002-03-15 | Kyocera Corp | 複合多層配線基板 |
JP2004172473A (ja) | 2002-11-21 | 2004-06-17 | Fujikura Ltd | 多層プリント配線板およびその製造方法 |
US7378596B2 (en) * | 2003-04-18 | 2008-05-27 | Ibiden Co., Ltd. | Rigid-flex wiring board |
JP2005045150A (ja) * | 2003-07-25 | 2005-02-17 | Matsushita Electric Ind Co Ltd | 中間接続用配線基材および多層配線基板、ならびにこれらの製造方法 |
JP4574288B2 (ja) * | 2004-04-09 | 2010-11-04 | 大日本印刷株式会社 | リジッド−フレキシブル基板の製造方法 |
JP2005307088A (ja) * | 2004-04-23 | 2005-11-04 | Matsushita Electric Works Ltd | プリプレグ及び積層板 |
JP2005340270A (ja) * | 2004-05-24 | 2005-12-08 | Matsushita Electric Works Ltd | 積層板用プリプレグ、積層板並びにそれを用いたフレキシブルプリント配線板及びフレックスリジッドプリント配線板 |
JP4718890B2 (ja) * | 2005-04-28 | 2011-07-06 | 日本特殊陶業株式会社 | 多層配線基板及びその製造方法、多層配線基板構造体 |
JP5332608B2 (ja) * | 2006-03-03 | 2013-11-06 | 住友ベークライト株式会社 | 中間層材料およびコンポジット積層板 |
US7265719B1 (en) * | 2006-05-11 | 2007-09-04 | Ball Aerospace & Technologies Corp. | Packaging technique for antenna systems |
US7596863B2 (en) * | 2007-01-12 | 2009-10-06 | Endicott Interconnect Technologies, Inc. | Method of providing a printed circuit board with an edge connection portion and/or a plurality of cavities therein |
-
2007
- 2007-09-13 WO PCT/JP2007/067872 patent/WO2009028110A1/ja active Application Filing
- 2007-09-13 US US12/674,803 patent/US20110120754A1/en not_active Abandoned
- 2007-09-13 EP EP07807279.0A patent/EP2180772A4/en not_active Withdrawn
- 2007-09-13 JP JP2009529958A patent/JP5071481B2/ja not_active Expired - Fee Related
- 2007-09-13 KR KR1020107006426A patent/KR101115108B1/ko not_active IP Right Cessation
- 2007-09-13 CN CN2007801003560A patent/CN101785373B/zh not_active Expired - Fee Related
- 2007-09-29 TW TW096136519A patent/TWI442859B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP5071481B2 (ja) | 2012-11-14 |
TWI442859B (zh) | 2014-06-21 |
KR101115108B1 (ko) | 2012-03-13 |
EP2180772A4 (en) | 2013-08-28 |
US20110120754A1 (en) | 2011-05-26 |
KR20100046268A (ko) | 2010-05-06 |
EP2180772A1 (en) | 2010-04-28 |
TW200915955A (en) | 2009-04-01 |
WO2009028110A1 (ja) | 2009-03-05 |
CN101785373B (zh) | 2012-03-28 |
CN101785373A (zh) | 2010-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5071481B2 (ja) | 多層配線基板および半導体装置 | |
JP4902606B2 (ja) | 半導体パッケージの製造方法及びそれを用いた半導体プラスチックパッケージ | |
JP5522051B2 (ja) | 多層プリント配線板及び半導体装置 | |
JP4820388B2 (ja) | 半導体プラスチックパッケージ及びその製造方法 | |
KR100920535B1 (ko) | 수지 조성물, 프리프레그, 적층판 및 반도체 패키지 | |
KR101502653B1 (ko) | 적층판, 회로판 및 반도체 장치 | |
JP5428232B2 (ja) | プリプレグ、積層板、多層プリント配線板、及び半導体装置 | |
JP5230059B2 (ja) | プリプレグ、回路基板および半導体装置 | |
KR100751286B1 (ko) | 반도체 실장용 기판 및 반도체 패키지 제조방법 | |
JP5056787B2 (ja) | 積層板、多層プリント配線板および半導体装置 | |
JPWO2009051120A1 (ja) | 半導体素子搭載基板 | |
KR100957220B1 (ko) | 절연시트 제조방법과 이를 이용한 금속층적층판 및인쇄회로기판 제조방법 | |
WO2015072261A1 (ja) | 樹脂層付きキャリア材料、積層体、回路基板および電子装置 | |
KR101281898B1 (ko) | 다층 프린트배선판 및 그 제조방법 | |
KR101039846B1 (ko) | 다층 인쇄회로기판의 제조방법 및 그것을 이용한 반도체플라스틱 패키지 | |
JP5292847B2 (ja) | 半導体素子搭載基板 | |
KR100971294B1 (ko) | 반도체 플라스틱 패키지 및 그 제조방법 | |
JP2018009065A (ja) | エポキシ樹脂組成物、プリプレグ、金属張積層板及びプリント配線板 | |
KR100744993B1 (ko) | 다층 인쇄회로기판 및 그 제작방법 | |
US20190214321A1 (en) | Printed wiring board, printed circuit board, prepreg | |
JP5835401B2 (ja) | プリプレグ、回路基板および半導体装置 | |
KR100722741B1 (ko) | 다층 인쇄회로기판 및 그 제작방법 | |
JP2011173985A (ja) | 硫酸バリウム粒子含有エポキシ樹脂組成物、プリプレグ、金属張積層板、プリント配線板及び半導体装置 | |
KR20110002023A (ko) | 수지 조성물, 수지 부착 캐리어 재료, 다층 프린트 배선판 및 반도체 장치 | |
JP5788297B2 (ja) | プリプレグ、回路基板および半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120112 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120724 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5071481 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150831 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |