JPWO2008126891A1 - ドライエッチング方法 - Google Patents
ドライエッチング方法 Download PDFInfo
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- JPWO2008126891A1 JPWO2008126891A1 JP2009509366A JP2009509366A JPWO2008126891A1 JP WO2008126891 A1 JPWO2008126891 A1 JP WO2008126891A1 JP 2009509366 A JP2009509366 A JP 2009509366A JP 2009509366 A JP2009509366 A JP 2009509366A JP WO2008126891 A1 JPWO2008126891 A1 JP WO2008126891A1
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- Prior art keywords
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Links
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000001312 dry etching Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000011347 resin Substances 0.000 claims abstract description 50
- 229920005989 resin Polymers 0.000 claims abstract description 50
- 238000005530 etching Methods 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 50
- 230000008569 process Effects 0.000 claims description 17
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 10
- 230000007935 neutral effect Effects 0.000 claims description 10
- 238000004380 ashing Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 112
- 230000015572 biosynthetic process Effects 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
上記半導体層に貫通孔が形成される。上記貫通孔を介して露出する上記絶縁層の領域をエッチングすることで前記絶縁層に凹所を形成しながら、前記貫通孔および前記凹所の側壁に樹脂膜が形成される。
上記半導体層に貫通孔が形成される。上記貫通孔を介して露出する上記絶縁層の領域をエッチングすることで前記絶縁層に凹所を形成しながら、前記貫通孔および前記凹所の側壁に樹脂膜が形成される。
これにより、上記樹脂膜を安定して形成することが可能となる。
これにより、比較的高い成膜レートを得ることが可能となる。
これにより、上記樹脂膜の成膜レートを向上させることが可能となる。
これにより、上記凹所の形成時に入射するイオンの衝突作用から、上記貫通孔および上記凹所の側壁を保護することが可能となる。
磁気中性線放電エッチング法を採用することにより、1Pa以下の比較的低圧の下でも所望とするエッチング特性を得ることができる。
これにより、上記基板に対して、上記貫通孔と上記凹所からなるコンタクトホールを形成することができる。
これにより、エッチングガスをアッシングガスの切り替えのみで上記樹脂膜の除去を容易に実施することができる。
21 第1の半導体層
22 第2の半導体層
23 絶縁層
24 マスクパターン層
25 貫通孔
26 凹所
27 樹脂膜
28 コンタクトホール
29 金属層
30 ドライエッチング装置
Claims (10)
- シリコン酸化物からなる絶縁層の上に半導体層が形成された基板を準備し、
前記半導体層に貫通孔を形成し、
前記貫通孔を介して露出する前記絶縁層の領域をエッチングすることで前記絶縁層に凹所を形成しながら、前記貫通孔および前記凹所の側壁に樹脂膜を形成する
ドライエッチング方法。 - 請求項1に記載のドライエッチング方法であって、
前記凹所を形成することは、エッチングガスとして、フロロカーボン系ガスを少なくとも含むガスを用いる
ドライエッチング方法。 - 請求項2に記載のドライエッチング方法であって、
エッチング圧力は、0.1Pa以上1.0Pa以下である
ドライエッチング方法。 - 請求項3に記載のドライエッチング方法であって、
エッチングガスに占めるフロロカーボン系ガスの割合は、20%以上である
ドライエッチング方法。 - 請求項4に記載のドライエッチング方法であって、
前記フロロカーボン系ガスは、C4F8である
ドライエッチング方法。 - 請求項3に記載のドライエッチング方法であって、
前記基板の温度は、150℃以下である
ドライエッチング方法。 - 請求項3に記載のドライエッチング方法であって、
前記凹所の側壁に形成される樹脂膜の厚さは、0.1μm以上である
ドライエッチング方法。 - 請求項1に記載のドライエッチング方法であって、
前記凹所は、磁気中性線放電エッチング法によって形成される
ドライエッチング方法。 - 請求項1に記載のドライエッチング方法であって、さらに、
前記凹所の形成後、前記樹脂膜を除去する
ドライエッチング方法。 - 請求項9に記載のドライエッチング方法であって、
前記樹脂膜は、酸素プラズマによるアッシング処理によって除去される
ドライエッチング方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009509366A JP5268112B2 (ja) | 2007-04-11 | 2008-04-10 | ドライエッチング方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007103512 | 2007-04-11 | ||
JP2007103512 | 2007-04-11 | ||
PCT/JP2008/057066 WO2008126891A1 (ja) | 2007-04-11 | 2008-04-10 | ドライエッチング方法 |
JP2009509366A JP5268112B2 (ja) | 2007-04-11 | 2008-04-10 | ドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008126891A1 true JPWO2008126891A1 (ja) | 2010-07-22 |
JP5268112B2 JP5268112B2 (ja) | 2013-08-21 |
Family
ID=39863986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009509366A Active JP5268112B2 (ja) | 2007-04-11 | 2008-04-10 | ドライエッチング方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20100062606A1 (ja) |
EP (1) | EP2136391A4 (ja) |
JP (1) | JP5268112B2 (ja) |
KR (1) | KR101097821B1 (ja) |
CN (1) | CN101652841B (ja) |
AU (1) | AU2008239010B2 (ja) |
TW (1) | TW200901312A (ja) |
WO (1) | WO2008126891A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8158522B2 (en) * | 2009-09-25 | 2012-04-17 | Applied Materials, Inc. | Method of forming a deep trench in a substrate |
JP5654359B2 (ja) * | 2011-01-06 | 2015-01-14 | 株式会社アルバック | プラズマエッチング方法、及びプラズマエッチング装置 |
US8946076B2 (en) * | 2013-03-15 | 2015-02-03 | Micron Technology, Inc. | Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells |
KR102235443B1 (ko) | 2014-01-10 | 2021-04-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN105448697B (zh) * | 2014-07-18 | 2018-05-01 | 中微半导体设备(上海)有限公司 | 高深宽比结构的刻蚀方法及mems器件的制作方法 |
KR101539197B1 (ko) * | 2015-02-05 | 2015-07-24 | 주식회사 스탠딩에그 | Z축 움직임 성능을 개선하고 구조물 깊이 편차를 최소화하는 마이크로머시닝 방법 및 이를 이용한 가속도 센서 |
US10569071B2 (en) | 2015-08-31 | 2020-02-25 | Ethicon Llc | Medicant eluting adjuncts and methods of using medicant eluting adjuncts |
US10285692B2 (en) * | 2015-08-31 | 2019-05-14 | Ethicon Llc | Adjuncts for surgical devices including agonists and antagonists |
TWI812762B (zh) * | 2018-07-30 | 2023-08-21 | 日商東京威力科創股份有限公司 | 處理被處理體之方法、處理裝置及處理系統 |
JP7478059B2 (ja) * | 2020-08-05 | 2024-05-02 | 株式会社アルバック | シリコンのドライエッチング方法 |
Family Cites Families (21)
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US5737496A (en) * | 1993-11-17 | 1998-04-07 | Lucent Technologies Inc. | Active neural network control of wafer attributes in a plasma etch process |
JPH09129729A (ja) * | 1995-11-02 | 1997-05-16 | Sony Corp | 接続孔の形成方法 |
JPH11219938A (ja) | 1998-02-02 | 1999-08-10 | Matsushita Electron Corp | プラズマエッチング方法 |
TW429445B (en) * | 1999-08-02 | 2001-04-11 | Taiwan Semiconductor Mfg | Fabricating method of floating gate for stacked-gate nonvolatile memory |
US6800512B1 (en) * | 1999-09-16 | 2004-10-05 | Matsushita Electric Industrial Co., Ltd. | Method of forming insulating film and method of fabricating semiconductor device |
JP2001313337A (ja) * | 2000-02-23 | 2001-11-09 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US20010053572A1 (en) * | 2000-02-23 | 2001-12-20 | Yoshinari Ichihashi | Semiconductor device having opening and method of fabricating the same |
JP2002062246A (ja) * | 2000-08-17 | 2002-02-28 | Mitsutoyo Corp | カンチレバーの製造方法 |
US20020170678A1 (en) * | 2001-05-18 | 2002-11-21 | Toshio Hayashi | Plasma processing apparatus |
JP3984014B2 (ja) * | 2001-09-26 | 2007-09-26 | 株式会社東芝 | 半導体装置用基板を製造する方法および半導体装置用基板 |
US6955177B1 (en) * | 2001-12-07 | 2005-10-18 | Novellus Systems, Inc. | Methods for post polysilicon etch photoresist and polymer removal with minimal gate oxide loss |
JP2003203967A (ja) | 2001-12-28 | 2003-07-18 | Toshiba Corp | 部分soiウェーハの製造方法、半導体装置及びその製造方法 |
JP4088453B2 (ja) * | 2002-02-14 | 2008-05-21 | 株式会社日立グローバルストレージテクノロジーズ | 垂直記録用磁気ヘッド及びそれを搭載した磁気ディスク装置 |
US6759340B2 (en) * | 2002-05-09 | 2004-07-06 | Padmapani C. Nallan | Method of etching a trench in a silicon-on-insulator (SOI) structure |
EP1691402A4 (en) * | 2003-12-01 | 2008-07-23 | Matsushita Electric Ind Co Ltd | PLASMA ETCHING PROCESS |
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JP4796965B2 (ja) * | 2004-07-02 | 2011-10-19 | 株式会社アルバック | エッチング方法及び装置 |
JP4593402B2 (ja) * | 2005-08-25 | 2010-12-08 | 株式会社日立ハイテクノロジーズ | エッチング方法およびエッチング装置 |
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US7776696B2 (en) * | 2007-04-30 | 2010-08-17 | Spansion Llc | Method to obtain multiple gate thicknesses using in-situ gate etch mask approach |
-
2008
- 2008-04-10 KR KR1020097021169A patent/KR101097821B1/ko active IP Right Grant
- 2008-04-10 JP JP2009509366A patent/JP5268112B2/ja active Active
- 2008-04-10 US US12/594,966 patent/US20100062606A1/en not_active Abandoned
- 2008-04-10 EP EP08740167A patent/EP2136391A4/en not_active Withdrawn
- 2008-04-10 AU AU2008239010A patent/AU2008239010B2/en active Active
- 2008-04-10 WO PCT/JP2008/057066 patent/WO2008126891A1/ja active Application Filing
- 2008-04-10 CN CN2008800116513A patent/CN101652841B/zh active Active
- 2008-04-11 TW TW097113146A patent/TW200901312A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW200901312A (en) | 2009-01-01 |
EP2136391A4 (en) | 2012-12-19 |
KR20090125174A (ko) | 2009-12-03 |
CN101652841A (zh) | 2010-02-17 |
US20100062606A1 (en) | 2010-03-11 |
CN101652841B (zh) | 2012-01-18 |
AU2008239010B2 (en) | 2011-09-15 |
AU2008239010A1 (en) | 2008-10-23 |
EP2136391A1 (en) | 2009-12-23 |
WO2008126891A1 (ja) | 2008-10-23 |
KR101097821B1 (ko) | 2011-12-22 |
JP5268112B2 (ja) | 2013-08-21 |
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