JPWO2008062623A1 - 不揮発性記憶装置 - Google Patents
不揮発性記憶装置 Download PDFInfo
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- 238000003860 storage Methods 0.000 title claims abstract description 12
- 230000008859 change Effects 0.000 claims description 85
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910019899 RuO Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 194
- 230000015556 catabolic process Effects 0.000 description 17
- 239000010936 titanium Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000015654 memory Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
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- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
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- G—PHYSICS
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- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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Abstract
Description
1.下部電極と、
上部電極と、
前記下部電極と上部電極間に、1層以上の非晶質の絶縁層と1層以上の抵抗変化層とが積層された積層構造と、
を有することを特徴とする不揮発性記憶装置。
前記絶縁層は、非晶質のニッケル酸化物を含有することを特徴とする上記1、2、4又は5に記載の不揮発性記憶装置。
2 絶縁膜
3 下部電極
4 層間絶縁膜
5 抵抗変化層
6 非結晶の絶縁層
7 上部電極
8 下部電極
9 非晶質の絶縁膜
10 抵抗変化層
11 上部電極
12 下部電極
13 非晶質の絶縁層
14 抵抗変化層
15 非晶質の絶縁層
16 上部電極
17 下部電極
18 抵抗変化層
19 非晶質の絶縁層
20 抵抗変化層
21 上部電極
22 シリコン基板
23 シリコン酸化膜
24 チタン
25 窒化チタン
26 チタン
27 ルテニウム
28 層間絶縁膜
29 抵抗変化層
30 非晶質の絶縁層
31 上部電極
35 結晶粒界を介した電流経路
36 フィラメントによる電流経路
37 絶縁破壊により形成される電流経路
38 フィラメントによる電流経路
39 結晶粒界を介した電流経路
以下、本発明の不揮発性記憶装置を実施形態に基づき詳細に説明する。
本発明の不揮発性記憶装置は下部電極と、上部電極と、これら両電極に挟まれた積層構造を有する。この積層構造は、1層以上の絶縁層と、1層以上の抵抗変化層を有する。ここで、「抵抗変化層」とは、所定の電圧履歴を加えることによって、2種類以上の抵抗値に変化することができる層のことである。なお、抵抗変化層が絶縁性の材料から構成される場合、2種類以上の抵抗値に変化可能か否かによって上記絶縁層とは区別される。
まず、この抵抗変化層について説明する。この抵抗変化層は、図10で示されるように、第1の抵抗状態で表される電圧−電流特性と、第2の抵抗状態で表される電圧−電流特性の、2種類の抵抗値を有する。すなわち、抵抗変化層に印加する電圧がV2〜V3の間では、抵抗変化層に流れる電流が小さい状態(抵抗値が大きい第2の抵抗状態)となる。一方、抵抗変化層に印加する電圧がV3を超えた場合には、抵抗変化層に流れる電流が大きい状態(抵抗値が小さい第1の抵抗状態)状態となる。
以下に、図6〜9を用いて本発明の不揮発性記憶装置の製造方法の一例を示す。
まず、シリコン基板22上に、熱酸化法又はCVD法を用いてシリコン酸化膜23を形成し、この上にスパッタリング法又はCVD法を用いて、チタン24、窒化チタン25、チタン26、ルテニウム27からなる下部電極を形成する(図6(a))。なお、この下部電極材料としては後工程における電極材料の酸化による高抵抗化を抑制するために、Pt、Ru、RuO2、Ir、Ti、TiN及びWNからなる群から選ばれる材料を用いることが好ましい。また、シリコン基板と電極材料の密着性を高めるため、下部電極として複数の層を積層させることが好ましい。この下部電極としては、TiとTiNの積層構造を用いるのがより好ましい。
まず、シリコン基板22を準備し、CVD法や熱酸化法を用いてこのシリコン基板22上に膜厚100nmのシリコン酸化膜23を堆積した。この後、スパッタリング法を用いて、Ti層24/TiN層25/Ti層26を成膜した。次に、膜厚100nmのRu膜を成膜して最終的に下部電極27を形成した(図6(a))。
Claims (7)
- 下部電極と、
上部電極と、
前記下部電極と上部電極間に、1層以上の非晶質の絶縁層と1層以上の抵抗変化層とが積層された積層構造と、
を有することを特徴とする不揮発性記憶装置。 - 前記絶縁層は、前記抵抗変化層を構成する材料よりも低い誘電率の材料から構成されることを特徴とする請求項1に記載の不揮発性記憶装置。
- 前記絶縁層は、Al及びSiの少なくとも一方の元素を含む酸化物、窒化物又は酸窒化物を含有することを特徴とする請求項1又は2に記載の不揮発性記憶装置。
- 前記抵抗変化層は、少なくとも前記絶縁層に含まれる元素を含有する結晶質の層であることを特徴とする請求項1又は2に記載の不揮発性記憶装置。
- 前記抵抗変化層は、Ni、V、Zn、Nb、Ti、W及びCoからなる群から選択された少なくとも一種の元素を含有する酸化物を含むことを特徴とする請求項1、2又は4に記載の不揮発性記憶装置。
- 前記抵抗変化層は、結晶質のニッケル酸化物を含有し、
前記絶縁層は、非晶質のニッケル酸化物を含有することを特徴とする請求項1、2、4又は5に記載の不揮発性記憶装置。 - 前記下部電極及び上部電極は、Pt、Ru、RuO2、Ir、Ti、TiN及びWNからなる群から選択された少なくとも一種の物質を含有することを特徴とする請求項1〜6の何れか1項に記載の不揮発性記憶装置。
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PCT/JP2007/070464 WO2008062623A1 (fr) | 2006-11-22 | 2007-10-19 | Dispositif de mémoire non volatile |
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JP5217259B2 (ja) * | 2007-06-07 | 2013-06-19 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP5309615B2 (ja) * | 2008-03-05 | 2013-10-09 | 富士通株式会社 | 抵抗変化型メモリおよびその作製方法 |
JP5215741B2 (ja) * | 2008-06-09 | 2013-06-19 | シャープ株式会社 | 可変抵抗素子 |
KR100983175B1 (ko) * | 2008-07-03 | 2010-09-20 | 광주과학기술원 | 산화물막과 고체 전해질막을 구비하는 저항 변화 메모리소자, 및 이의 동작방법 |
CN102067314A (zh) | 2009-04-14 | 2011-05-18 | 松下电器产业株式会社 | 电阻变化元件及其制造方法 |
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CN102569651A (zh) * | 2012-01-20 | 2012-07-11 | 北京大学 | 一种阻变存储器的制备方法 |
CN102664235B (zh) * | 2012-04-12 | 2013-12-04 | 北京大学 | 一种小电极结构阻变存储器及其制备方法 |
CN103296205A (zh) * | 2013-07-01 | 2013-09-11 | 天津理工大学 | 一种低功耗阻变存储器及其制备方法 |
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US20040124407A1 (en) * | 2000-02-11 | 2004-07-01 | Kozicki Michael N. | Scalable programmable structure, an array including the structure, and methods of forming the same |
JP2004241396A (ja) * | 2002-02-07 | 2004-08-26 | Sharp Corp | 抵抗変化素子の製造方法および不揮発性抵抗変化メモリデバイスの製造方法、並びに不揮発性抵抗変化メモリデバイス |
US7129531B2 (en) * | 2002-08-08 | 2006-10-31 | Ovonyx, Inc. | Programmable resistance memory element with titanium rich adhesion layer |
US7402456B2 (en) * | 2004-04-23 | 2008-07-22 | Sharp Laboratories Of America, Inc. | PCMO thin film with memory resistance properties |
US20080078983A1 (en) * | 2006-09-28 | 2008-04-03 | Wolfgang Raberg | Layer structures comprising chalcogenide materials |
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2007
- 2007-10-19 CN CNA2007800432164A patent/CN101542728A/zh active Pending
- 2007-10-19 JP JP2008545337A patent/JP5104763B2/ja not_active Expired - Fee Related
- 2007-10-19 US US12/514,771 patent/US20100038615A1/en not_active Abandoned
- 2007-10-19 WO PCT/JP2007/070464 patent/WO2008062623A1/ja active Application Filing
Also Published As
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US20100038615A1 (en) | 2010-02-18 |
WO2008062623A1 (fr) | 2008-05-29 |
JP5104763B2 (ja) | 2012-12-19 |
CN101542728A (zh) | 2009-09-23 |
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