JPWO2007066401A1 - 電子部品の製造方法および熱伝導部材の製造方法並びに電子部品用熱伝導部材の実装方法 - Google Patents
電子部品の製造方法および熱伝導部材の製造方法並びに電子部品用熱伝導部材の実装方法 Download PDFInfo
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- JPWO2007066401A1 JPWO2007066401A1 JP2007549001A JP2007549001A JPWO2007066401A1 JP WO2007066401 A1 JPWO2007066401 A1 JP WO2007066401A1 JP 2007549001 A JP2007549001 A JP 2007549001A JP 2007549001 A JP2007549001 A JP 2007549001A JP WO2007066401 A1 JPWO2007066401 A1 JP WO2007066401A1
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- bonding material
- thermosetting adhesive
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 16
- 239000000463 material Substances 0.000 claims abstract description 154
- 239000000853 adhesive Substances 0.000 claims abstract description 119
- 230000001070 adhesive effect Effects 0.000 claims abstract description 119
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000002844 melting Methods 0.000 claims abstract description 55
- 230000008018 melting Effects 0.000 claims abstract description 55
- 239000007787 solid Substances 0.000 claims abstract description 27
- 239000012530 fluid Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000007711 solidification Methods 0.000 abstract description 16
- 230000008023 solidification Effects 0.000 abstract description 16
- 239000000155 melt Substances 0.000 abstract description 12
- 239000003351 stiffener Substances 0.000 description 29
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000004519 grease Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims (10)
- 電子部品上に接合材を配置する工程と、接合材の表面に熱伝導部材を重ね合わせ、熱伝導部材および基板の間に熱硬化性接着剤を挟み込む工程と、接合材の融点未満の温度で熱硬化性接着剤を硬化させる工程と、熱硬化性接着剤の硬化後に接合材を融解させる工程とを備えることを特徴とする電子部品の製造方法。
- 請求の範囲第1項に記載の電子部品の製造方法において、前記接合材が固形であることを特徴とする電子部品の製造方法。
- 請求の範囲第1項に記載の電子部品の製造方法において、前記熱硬化性接着剤が流動性を有することを特徴とする電子部品の製造方法。
- 請求の範囲第1項に記載の電子部品の製造方法において、前記熱伝導部材および前記基板の間に前記熱硬化性接着剤を挟み込む際に、さらに支持部材を挟み込むことを特徴とする電子部品の製造方法。
- 請求の範囲第4項に記載の電子部品の製造方法において前記熱伝導部材および前記基板の間に前記熱硬化性接着剤を挟み込む際に、前記支持部材の全周にわたって前記熱硬化性接着剤が挟み込まれることを特徴とする電子部品の製造方法。
- 電子部品上に接合材を配置する工程と、電子部品の周囲で基板上に熱硬化性接着剤および熱伝導部材を重ね合わせ、接合材の表面に熱伝導部材を向き合わせる工程と、熱硬化性接着剤を加熱し、熱硬化性接着剤を溶融する工程と、接合材の融点未満の温度で熱硬化性接着剤を硬化させる工程と、熱硬化性接着剤の硬化後に接合材を融解させる工程とを備えることを特徴とする電子部品の製造方法。
- 部品上に接合材を配置する工程と、接合材の表面に熱伝導部材を重ね合わせ、熱伝導部材および基板の間に熱硬化性接着剤を挟み込む工程と、接合材の融点未満の温度で熱硬化性接着剤を硬化させる工程と、熱硬化性接着剤の硬化後に接合材を融解させる工程とを備えることを特徴とする熱伝導部材の製造方法。
- 部品上に接合材を配置する工程と、部品の周囲で基板上に熱硬化性接着剤および熱伝導部材を重ね合わせ、接合材の表面に熱伝導部材を向き合わせる工程と、熱硬化性接着剤を加熱し、熱硬化性接着剤を溶融する工程と、接合材の融点未満の温度で熱硬化性接着剤を硬化させる工程と、熱硬化性接着剤の硬化後に接合材を融解させる工程とを備えることを特徴とする熱伝導部材の製造方法。
- 基板上に実装される電子部品上に固形の接合材を配置する工程と、接合材の表面に熱伝導部材を重ね合わせ、熱伝導部材および基板の間に支持部材および流動性の熱硬化性接着剤を挟み込む工程と、熱硬化性接着剤の硬化温度以上で接合材の融点未満の温度を維持し、熱硬化性接着剤を硬化させる工程と、熱硬化性接着剤の硬化後に接合材の融点以上の温度で接合材を融解させる工程とを備えることを特徴とする電子部品用熱伝導部材の実装方法。
- 基板上に実装される電子部品上に固形の接合材を配置する工程と、電子部品の周囲で基板上で支持部材、固形の熱硬化性接着剤および熱伝導部材を重ね合わせ、接合材の表面に熱伝導部材を向き合わせる工程と、固形の熱硬化性接着剤を加熱し、熱硬化性接着剤を溶融する工程と、熱硬化性接着剤の硬化温度以上で接合材の融点未満の温度を維持し、熱硬化性接着剤を硬化させる工程と、熱硬化性接着剤の硬化後に接合材の融点以上の温度で接合材を融解させる工程とを備えることを特徴とする電子部品用熱伝導部材の実装方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/022551 WO2007066401A1 (ja) | 2005-12-08 | 2005-12-08 | 電子部品の製造方法および熱伝導部材の製造方法並びに電子部品用熱伝導部材の実装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007066401A1 true JPWO2007066401A1 (ja) | 2009-05-14 |
JP4757880B2 JP4757880B2 (ja) | 2011-08-24 |
Family
ID=38122554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007549001A Expired - Fee Related JP4757880B2 (ja) | 2005-12-08 | 2005-12-08 | 電子部品の製造方法および熱伝導部材の製造方法並びに電子部品用熱伝導部材の実装方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8709197B2 (ja) |
EP (1) | EP1959493B1 (ja) |
JP (1) | JP4757880B2 (ja) |
KR (1) | KR100962100B1 (ja) |
CN (1) | CN100593238C (ja) |
WO (1) | WO2007066401A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IN2012DN02727A (ja) * | 2009-09-09 | 2015-09-11 | Mitsubishi Materials Corp | |
US20120188721A1 (en) * | 2011-01-21 | 2012-07-26 | Nxp B.V. | Non-metal stiffener ring for fcbga |
US8823164B2 (en) * | 2011-10-28 | 2014-09-02 | International Business Machines Corporation | Heatsink attachment module |
JP6512231B2 (ja) * | 2017-01-27 | 2019-05-15 | トヨタ自動車株式会社 | 半導体装置 |
CN107993995B (zh) * | 2017-11-30 | 2024-01-30 | 成都信息工程大学 | 一种芯片降温装置 |
DE102019200096A1 (de) * | 2019-01-07 | 2020-07-09 | Zf Friedrichshafen Ag | Elektronisches Gerät und Verfahren zum Zusammenbau eines elektronischen Geräts |
Citations (4)
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JPH11204552A (ja) * | 1998-01-07 | 1999-07-30 | Nec Corp | 半導体装置のパッケージ方法および半導体装置 |
JP2002190560A (ja) * | 2000-12-21 | 2002-07-05 | Nec Corp | 半導体装置 |
JP2004303900A (ja) * | 2003-03-31 | 2004-10-28 | Denso Corp | 半導体装置 |
JP2006049572A (ja) * | 2004-08-04 | 2006-02-16 | Toyota Motor Corp | 半導体装置およびその製造方法 |
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JPS54108723A (en) | 1978-02-13 | 1979-08-25 | Kouji Isono | Enterprize condition document for management analysis |
JPS54108273A (en) | 1978-02-14 | 1979-08-24 | Matsushita Electric Ind Co Ltd | Method of mounting components on circuit board |
JP2984068B2 (ja) * | 1991-01-31 | 1999-11-29 | 株式会社日立製作所 | 半導体装置の製造方法 |
US5219794A (en) * | 1991-03-14 | 1993-06-15 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of fabricating same |
US6021046A (en) * | 1993-06-09 | 2000-02-01 | Dallas Semiconductor Corporation | Thermal protection of electrical elements systems |
JPH0878837A (ja) | 1994-09-06 | 1996-03-22 | Matsushita Electric Ind Co Ltd | 実装ハンダ付け工法及び実装ハンダ付け済みプリント基板 |
US5641713A (en) * | 1995-03-23 | 1997-06-24 | Texas Instruments Incorporated | Process for forming a room temperature seal between a base cavity and a lid using an organic sealant and a metal seal ring |
JPH0917827A (ja) * | 1995-06-29 | 1997-01-17 | Fujitsu Ltd | 半導体装置 |
US6451422B1 (en) * | 1999-12-01 | 2002-09-17 | Johnson Matthey, Inc. | Thermal interface materials |
KR100446290B1 (ko) * | 2001-11-03 | 2004-09-01 | 삼성전자주식회사 | 댐을 포함하는 반도체 패키지 및 그 제조방법 |
WO2004105129A1 (ja) * | 2003-05-23 | 2004-12-02 | Fujitsu Limited | プリント基板ユニットおよびその製造方法 |
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-
2005
- 2005-12-08 JP JP2007549001A patent/JP4757880B2/ja not_active Expired - Fee Related
- 2005-12-08 CN CN200580052267A patent/CN100593238C/zh not_active Expired - Fee Related
- 2005-12-08 WO PCT/JP2005/022551 patent/WO2007066401A1/ja active Application Filing
- 2005-12-08 KR KR1020087014131A patent/KR100962100B1/ko not_active IP Right Cessation
- 2005-12-08 EP EP05814186A patent/EP1959493B1/en not_active Expired - Fee Related
-
2008
- 2008-06-06 US US12/155,680 patent/US8709197B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11204552A (ja) * | 1998-01-07 | 1999-07-30 | Nec Corp | 半導体装置のパッケージ方法および半導体装置 |
JP2002190560A (ja) * | 2000-12-21 | 2002-07-05 | Nec Corp | 半導体装置 |
JP2004303900A (ja) * | 2003-03-31 | 2004-10-28 | Denso Corp | 半導体装置 |
JP2006049572A (ja) * | 2004-08-04 | 2006-02-16 | Toyota Motor Corp | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100593238C (zh) | 2010-03-03 |
JP4757880B2 (ja) | 2011-08-24 |
KR20080073743A (ko) | 2008-08-11 |
EP1959493B1 (en) | 2012-02-08 |
US20080295957A1 (en) | 2008-12-04 |
EP1959493A4 (en) | 2010-03-10 |
EP1959493A1 (en) | 2008-08-20 |
US8709197B2 (en) | 2014-04-29 |
KR100962100B1 (ko) | 2010-06-09 |
CN101326637A (zh) | 2008-12-17 |
WO2007066401A1 (ja) | 2007-06-14 |
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