JPWO2006104151A1 - ウエハダイシング用粘着テープおよびそれを用いたチップの製造方法 - Google Patents
ウエハダイシング用粘着テープおよびそれを用いたチップの製造方法 Download PDFInfo
- Publication number
- JPWO2006104151A1 JPWO2006104151A1 JP2007510530A JP2007510530A JPWO2006104151A1 JP WO2006104151 A1 JPWO2006104151 A1 JP WO2006104151A1 JP 2007510530 A JP2007510530 A JP 2007510530A JP 2007510530 A JP2007510530 A JP 2007510530A JP WO2006104151 A1 JPWO2006104151 A1 JP WO2006104151A1
- Authority
- JP
- Japan
- Prior art keywords
- sensitive adhesive
- pressure
- adhesive layer
- wafer
- dicing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002390 adhesive tape Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 138
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 99
- 150000001875 compounds Chemical class 0.000 claims abstract description 50
- 230000005855 radiation Effects 0.000 claims abstract description 44
- 239000011342 resin composition Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 20
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 27
- 239000012790 adhesive layer Substances 0.000 description 17
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- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
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- SZUVGFMDDVSKSI-WIFOCOSTSA-N (1s,2s,3s,5r)-1-(carboxymethyl)-3,5-bis[(4-phenoxyphenyl)methyl-propylcarbamoyl]cyclopentane-1,2-dicarboxylic acid Chemical compound O=C([C@@H]1[C@@H]([C@](CC(O)=O)([C@H](C(=O)N(CCC)CC=2C=CC(OC=3C=CC=CC=3)=CC=2)C1)C(O)=O)C(O)=O)N(CCC)CC(C=C1)=CC=C1OC1=CC=CC=C1 SZUVGFMDDVSKSI-WIFOCOSTSA-N 0.000 description 1
- ZAMZCSIXTWIEDY-UHFFFAOYSA-N (2-propylphenyl)methanol Chemical compound CCCC1=CC=CC=C1CO ZAMZCSIXTWIEDY-UHFFFAOYSA-N 0.000 description 1
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- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
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- OHLKMGYGBHFODF-UHFFFAOYSA-N 1,4-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=C(CN=C=O)C=C1 OHLKMGYGBHFODF-UHFFFAOYSA-N 0.000 description 1
- HASUCEDGKYJBDC-UHFFFAOYSA-N 1-[3-[[bis(oxiran-2-ylmethyl)amino]methyl]cyclohexyl]-n,n-bis(oxiran-2-ylmethyl)methanamine Chemical compound C1OC1CN(CC1CC(CN(CC2OC2)CC2OC2)CCC1)CC1CO1 HASUCEDGKYJBDC-UHFFFAOYSA-N 0.000 description 1
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- CTOHEPRICOKHIV-UHFFFAOYSA-N 1-dodecylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCCCCCCCCCCC CTOHEPRICOKHIV-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- WVRHNZGZWMKMNE-UHFFFAOYSA-N 2-hydroxy-1-[2-(2-methylpropyl)phenyl]-2-phenylethanone Chemical compound CC(C)CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 WVRHNZGZWMKMNE-UHFFFAOYSA-N 0.000 description 1
- NACPTFCBIGBTSJ-UHFFFAOYSA-N 2-hydroxy-2-phenyl-1-(2-propan-2-ylphenyl)ethanone Chemical compound CC(C)C1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 NACPTFCBIGBTSJ-UHFFFAOYSA-N 0.000 description 1
- 229940044192 2-hydroxyethyl methacrylate Drugs 0.000 description 1
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
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- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical class C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
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- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
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- GWGWXYUPRTXVSY-UHFFFAOYSA-N N=C=O.N=C=O.CC1=CC=C(C)C=C1 Chemical compound N=C=O.N=C=O.CC1=CC=C(C)C=C1 GWGWXYUPRTXVSY-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- INXWLSDYDXPENO-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(CO)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C INXWLSDYDXPENO-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
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- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
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- 125000003700 epoxy group Chemical group 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- RJLZSKYNYLYCNY-UHFFFAOYSA-N ethyl carbamate;isocyanic acid Chemical group N=C=O.CCOC(N)=O RJLZSKYNYLYCNY-UHFFFAOYSA-N 0.000 description 1
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- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- DKGCZVJEVNZACI-UHFFFAOYSA-N n-[[5-[[bis(oxiran-2-ylmethyl)amino]methyl]-5-methylcyclohexa-1,3-dien-1-yl]methyl]-1-(oxiran-2-yl)-n-(oxiran-2-ylmethyl)methanamine Chemical compound C1C(CN(CC2OC2)CC2OC2)=CC=CC1(C)CN(CC1OC1)CC1CO1 DKGCZVJEVNZACI-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
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- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
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- 239000005056 polyisocyanate Substances 0.000 description 1
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- 239000004800 polyvinyl chloride Substances 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 150000003384 small molecules Chemical class 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
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- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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Abstract
Description
(1)基材フィルム上に粘着剤層が設けられたウエハダイシング用粘着テープであって、該粘着剤層は2層以上からなり、いずれの粘着剤層を構成する樹脂組成物も放射線重合性化合物を含有するとともに、粘着剤層の最外層を構成する樹脂組成物における放射線重合性化合物の含有量と、内側の粘着剤層を構成する樹脂組成物におけるそれが、基材フィルムに印加した応力が放射線照射後の最外層に十分に伝わり、該層とチップを剥離するに十分な程度に異なることを特徴とするウエハダイシング用粘着テープ、
(2)前記粘着剤層の最外層を構成する樹脂組成物中における放射線重合性化合物の含有量が、内側の粘着剤層を構成する樹脂組成物における放射線重合性化合物の含有量より大きいことを特徴とする(1)項記載のウエハダイシング用粘着テープ、
(3)前記粘着剤層の最外層を構成する樹脂組成物はアクリル系ベース樹脂100質量部に対して前記放射線重合性化合物50〜200質量部を含有し、前記内側の粘着剤層を構成する樹脂組成物はアクリル系ベース樹脂100質量部に対して前記放射線重合性化合物5〜100質量部を含有することを特徴とする(1)または(2)記載のウエハダイシング用粘着テープ、及び
(4)(1)〜(3)のいずれか1項記載のウエハダイシング用粘着テープで被切断物であるウエハを支持固定する工程、ブレードの切り込みの最下部が前記ウエハダイシング用粘着テープの前記最外層またはそれより内側の粘着剤層内部にくるようにウエハをダイシングする工程、前記ウエハダイシング用粘着テープに放射線を照射し、切断されたチップをピックアップする工程を有することを特徴とするチップの製造方法。
2:内側の粘着剤層
3:基材フィルム
4:ウエハダイシング用粘着テープ
5:ウエハ
5’:チップ
6:スクライブライン
7:ブレード
8:リングフレーム
9:固定用チャックテーブル
10:吸着ステージ
11:突き上げピン
12:吸着コレット
13:放射線重合性化合物を含有しない内側の粘着剤層
14:内側の粘着剤層が放射線重合性化合物を含有しない樹脂組成物で構成されたウエハダイシング用粘着テープ
15:チップ端部の剥離のきっかけ
なお、本発明において、「粘着剤」とは、粘着後に硬化等の処理に付すことにより剥離を可能にする剤を意味する。
本発明のウエハダイシング用粘着テープ4は、図1の断面図で示すように、基材フィルム3上に内側の粘着剤層2、粘着剤層の最外層1がこの順に形成されている。図2の斜視図による説明図で示すように、本発明のウエハダイシング用粘着テープ4は、粘着剤層の最外層1を介してドーナツ状の形状を有するリングフレーム8に貼合され、固定用チャックテーブル9に粘着剤層の最外層1が上側になるように、載置される。その後、その粘着剤層の最外層1に細断すべきウエハ5は貼合され、ブレード7でチップ5’に細断される。
<アクリル系ベース樹脂>
2−エチルヘキシルアクリレート、メチルアクリレート、2−ヒドロキシエチルアクリレートからなる共重合体を使用した。
<放射線重合性化合物>
ブチルアクリレート、2−エチルヘキシルアクリレート、メチルメタクリレート、2−ヒドロキシエチルアクリレートを共重合して得られるポリマー100質量部に対して、放射線重合性炭素−炭素二重結合を一つ以上有する化合物として2−イソシアネートエチルメタクリレートを5質量部付加して得られた放射線硬化性アクリル系ポリマーを使用した。
上記アクリル系ベース樹脂100質量部に、硬化剤としてポリイソシアネート化合物(日本ポリウレタン社製、商品名コロネートL)を3質量部、上記放射線重合性化合物を実施例、比較例に記載した配合部数、及び光重合開始剤としてα−ヒドロキシシクロヘキシルフェニルケトンを1質量部添加し、混合して粘着剤を得た。
EMMA樹脂(住友化学社製商品名、商品名:アクリフトWD201)を用いてTダイ法により厚さ100μmの基材フィルムを作製し、この基材フィルムに、表1および表2の実施例・比較例に示された構成の内側の粘着剤層(粘着剤層2)及び最外層の粘着剤層(粘着剤層1)を、それぞれ内側の粘着剤層の厚さが35μm、最外層の粘着剤層の厚さが10μmとなるように、この順で塗工しウエハダイシング用粘着テープを得た。
表1および表2の実施例・比較例のウエハダイシング用粘着テープを8インチ用リングフレームに貼着固定し、その貼着固定された状態でウエハダイシング用粘着テープに100μm厚の8インチシリコンウエハを貼合し、ディスコ社製ダイシング装置DAD340(商品名)にて5mm×5mmのチップサイズにフルカットダイシングした。この際のテープ面からのブレードの切り込み深さは表1および表2に示した深さとした。ダイシング後、高圧水銀灯ランプの紫外線照射機にてテープ背面側から照射量が500mJ/cm2となるように照射を行い、紫外線照射後、NECマシナリー製CPS−100FM(商品名)を用いてエキスパンドストローク12mmにてエキスパンドしその状態でピックアップを行った。ピックアップは先端径でR250の突き上げピンを用いて行った。評価項目は以下の項目について実施した。結果を表1および表2に示す。
ダイシングによりテープから発生した糸状のダイシング屑の発生数を顕微鏡観察にてカウントした。観察はスクライブライン5本分について実施した。
ダイシングにより粘着剤層から発生しウエハ上に付着した粉状の切り屑の発生数を顕微鏡観察にてその有無を確認した。
NECマシナリー製CPS−100FM(商品名)を用い、エキスパンドストロークを2mm及び12mmとしてチップを実際にピックアップし、チップが問題なく突き上げ→円形コレットにて吸着→リードフレーム上に設置、されるか否を評価した。評価は、8インチウエハの中から200チップをピックアップし、そのうち何チップが成功したかを評価した。
エキスパンドストローク12mmでエキスパンドをした際ウエハ拡径率(エキスパンド時のウエハ直径/8インチウエハの元の直径)、及びダイシングテープの破断の有無を観察した。
実施例1〜3からわかるように、糸状ダイシング屑、細かい粉状の切り屑の発生も無くピックアップ性にも問題なく、12mmのストロークのエキスパンドでテープ破断はなく、ウエハも十分に拡径された。また実施例4では、粘着剤層1の放射線重合性化合物の含有量が若干低かったためピックアップ性が若干低下したが、それ以外の項目については実施例1〜3と同様、何ら問題なく良好な結果が得られた。実施例6,7,8,9では、粘着剤層2の放射線重合性化合物の含有量が若干低かったためピックアップ性が若干低下したが、それ以外の項目については実施例1〜3と同様、何ら問題なく良好な結果が得られた。また実施例5では、粘着剤層2の放射線重合性化合物の含有量が若干多かったために紫外線照射後に硬くなり、そのためエキスパンドによるウエハ拡径が必ずしも十分でなく、硬い粘着剤層を12mmストロークでエキスパンドしたために若干ピックアップ性が低下したが、これら以外の項目については実施例1〜3と同様、何ら問題無く良好な結果が得られた。
Claims (4)
- 基材フィルム上に粘着剤層が設けられたウエハダイシング用粘着テープであって、該粘着剤層は2層以上からなり、いずれの粘着剤層を構成する樹脂組成物も放射線重合性化合物を含有するとともに、粘着剤層の最外層を構成する樹脂組成物における放射線重合性化合物の含有量と、内側の粘着剤層を構成する樹脂組成物におけるそれが、基材フィルムに印加した応力が放射線照射後の最外層に十分に伝わり、該層とチップを剥離するに十分な程度に異なることを特徴とするウエハダイシング用粘着テープ。
- 前記粘着剤層の最外層を構成する樹脂組成物中における放射線重合性化合物の含有量が、内側の粘着剤層を構成する樹脂組成物における放射線重合性化合物の含有量より大きいことを特徴とする請求項1記載のウエハダイシング用粘着テープ。
- 前記粘着剤層の最外層を構成する樹脂組成物はアクリル系ベース樹脂100質量部に対して前記放射線重合性化合物50〜200質量部を含有し、前記内側の粘着剤層を構成する樹脂組成物はアクリル系ベース樹脂100質量部に対して前記放射線重合性化合物5〜100質量部を含有することを特徴とする請求項1または2記載のウエハダイシング用粘着テープ。
- 請求項1〜3のいずれか1項記載のウエハダイシング用粘着テープで被切断物であるウエハを支持固定する工程、ブレードの切り込みの最下部が前記ウエハダイシング用粘着テープの前記最外層またはそれより内側の粘着剤層内部にくるようにウエハをダイシングする工程、前記ウエハダイシング用粘着テープに放射線を照射し、切断されたチップをピックアップする工程を有することを特徴とするチップの製造方法。
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JP5027460B2 (ja) * | 2006-07-28 | 2012-09-19 | 東京応化工業株式会社 | ウエハの接着方法、薄板化方法、及び剥離方法 |
JP4493643B2 (ja) * | 2006-12-06 | 2010-06-30 | 日東電工株式会社 | 再剥離型粘着剤組成物、及び粘着テープ又はシート |
CN102157422A (zh) * | 2010-02-12 | 2011-08-17 | 古河电气工业株式会社 | 卷芯及卷绕于卷芯的晶片加工用带 |
JP5641641B2 (ja) * | 2010-07-29 | 2014-12-17 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法 |
KR101579772B1 (ko) | 2011-02-18 | 2015-12-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 레벨 싱귤레이션 방법 및 시스템 |
JP5805411B2 (ja) * | 2011-03-23 | 2015-11-04 | ファスフォードテクノロジ株式会社 | ダイボンダのピックアップ方法およびダイボンダ |
TWI671799B (zh) * | 2011-03-30 | 2019-09-11 | Sumitomo Bakelite Co., Ltd. | 半導體晶圓等加工用黏著帶 |
JP5770038B2 (ja) * | 2011-07-25 | 2015-08-26 | リンテック株式会社 | 粘着シート |
CN105143380B (zh) * | 2013-03-28 | 2019-05-17 | 古河电气工业株式会社 | 粘合带及晶片加工用胶带 |
JP6582013B2 (ja) * | 2017-03-31 | 2019-09-25 | 古河電気工業株式会社 | 剥離ライナー付マスク一体型表面保護テープ |
KR20210141582A (ko) * | 2019-03-29 | 2021-11-23 | 미쓰이 가가쿠 토세로 가부시키가이샤 | 전자 장치의 제조 방법 및 점착성 필름 |
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GB2320615B (en) * | 1996-12-19 | 2001-06-20 | Lintec Corp | Process for producing a chip and pressure sensitive adhesive sheet for said process |
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TWI333672B (en) | 2010-11-21 |
KR20070118094A (ko) | 2007-12-13 |
TW200641987A (en) | 2006-12-01 |
JP5019613B2 (ja) | 2012-09-05 |
WO2006104151A1 (ja) | 2006-10-05 |
CN101138075A (zh) | 2008-03-05 |
KR101058975B1 (ko) | 2011-08-23 |
EP1865545A4 (en) | 2008-03-26 |
US20080008881A1 (en) | 2008-01-10 |
CN101138075B (zh) | 2011-04-20 |
US7985474B2 (en) | 2011-07-26 |
EP1865545A1 (en) | 2007-12-12 |
MY147688A (en) | 2012-12-31 |
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