JPWO2006098187A1 - フリップチップ実装方法およびバンプ形成方法 - Google Patents
フリップチップ実装方法およびバンプ形成方法 Download PDFInfo
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- JPWO2006098187A1 JPWO2006098187A1 JP2006522161A JP2006522161A JPWO2006098187A1 JP WO2006098187 A1 JPWO2006098187 A1 JP WO2006098187A1 JP 2006522161 A JP2006522161 A JP 2006522161A JP 2006522161 A JP2006522161 A JP 2006522161A JP WO2006098187 A1 JPWO2006098187 A1 JP WO2006098187A1
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- circuit board
- semiconductor chip
- solder powder
- dip tank
- molten resin
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
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Abstract
Description
11 接続端子
12 電極端子
13,14 樹脂
15 対流添加剤
20 半導体チップ
21 回路基板
22 接続体
25 基板
26 平板
27 電極
28 バンプ
30,31 固定治具
40,40a,40b ディップ槽
50 実装装置
60 搬送装置
70 加熱手段
80 パーティクルカウンター
90 循環装置
91,92 連結管
図2(a)〜(d)は、本発明の第1の実施形態におけるフリップチップ実装方法の基本的な工程を示した工程断面図である。
第1の実施形態で説明したフリップチップ実装方法は、溶融半田粉が含有した溶融樹脂が入ったディップ槽に、回路基板及び半導体チップを入れて、所定時間ディップすることによって、回路基板及び半導体チップの端子間に溶融半田粉を自己集合させ、接合体を形成することを特徴とするもので、この技術は、バンプ形成方法にも適用することができる。
図7及び図8は、本発明に係るフリップチップ実装方法を実行する実装装置50を示した図である。
本発明に係るフリップチップ実装方法の特徴は、一定の隙間をもって保持された半導体チップ及び回路基板を、溶融半田粉を含有した溶融樹脂の入ったディップ槽内にディップすることによって、半導体チップと回路基板の端子間に溶融半田粉を自己集合させて接続体を形成するところにある。つまり、溶融樹脂中に含有する半田粉は、樹脂中で溶融していることが必要となる。
図2(a)〜(d)は、本発明の第1の実施形態におけるフリップチップ実装方法の基本的な工程を示した工程断面図である。
第1の実施形態で説明したフリップチップ実装方法は、溶融半田粉が含有した溶融樹脂が入ったディップ槽に、回路基板及び半導体チップを入れて、所定時間ディップすることによって、回路基板及び半導体チップの端子間に溶融半田粉を自己集合させ、接合体を形成することを特徴とするもので、この技術は、バンプ形成方法にも適用することができる。
図7及び図8は、本発明に係るフリップチップ実装方法を実行する実装装置50を示した図である。
本発明に係るフリップチップ実装方法の特徴は、一定の隙間をもって保持された半導体チップ及び回路基板を、溶融半田粉を含有した溶融樹脂の入ったディップ槽内にディップすることによって、半導体チップと回路基板の端子間に溶融半田粉を自己集合させて接続体を形成するところにある。つまり、溶融樹脂中に含有する半田粉は、樹脂中で溶融していることが必要となる。
11 接続端子
12 電極端子
13,14 樹脂
15 対流添加剤
20 半導体チップ
21 回路基板
22 接続体
25 基板
26 平板
27 電極
28 バンプ
30,31 固定治具
40,40a,40b ディップ槽
50 実装装置
60 搬送装置
70 加熱手段
80 パーティクルカウンター
90 循環装置
91,92 連結管
Claims (23)
- 複数の接続端子を有する回路基板と対向させて、複数の電極端子を有する半導体チップを配置し、前記回路基板の接続端子と前記半導体チップの電極端子とを電気的に接続するフリップチップ実装方法において、
前記半導体チップを、前記回路基板に対して一定の隙間をもって対向させて保持する工程と、
前記一定の隙間をもって保持された半導体チップ及び回路基板を、溶融した半田粉を含有した溶融樹脂が入ったディップ槽内に所定時間ディップする工程と
を含み、
前記ディップ工程において、前記溶融半田粉が、前記回路基板の接続端子と前記半導体チップの電極端子との間に自己集合することによって、該端子間に接続体が形成されることを特徴とする、フリップチップ実装方法。 - 前記ディップ工程は、前記一定の隙間をもって保持された半導体チップ及び回路基板を、前記ディップ槽内で揺動させながら行なわれる、請求項1に記載のフリップチップ実装方法。
- 前記ディップ工程は、前記ディップ槽内の前記溶融樹脂を流動させながら行なわれる、請求項1に記載のフリップチップ実装方法。
- 前記ディップ工程の後、前記ディップ槽から前記半導体チップ及び回路基板を取り出し、前記半導体チップと前記回路基板間の隙間に浸透した前記溶融樹脂を硬化させる工程をさらに含む、請求項1に記載のフリップチップ実装方法。
- 前記半導体チップを保持する工程は、前記半導体チップ及び前記回路基板を固定治具に保持することによって、前記半導体チップを、前記回路基板に対して一定の隙間をもって対向させて保持する、請求項1に記載のフリップチップ実装方法。
- 前記半導体チップを保持する工程は、前記固定治具に複数の半導体チップ及び複数の回路基板を保持することによって、前記各半導体チップを、前記各回路基板に対して一定の隙間をもって対向させて保持する工程を含み、
前記ディップ工程は、前記複数の半導体チップ及び前記複数の回路基板を、前記ディップ槽内に同時にディップするバッチ処理で行なわれる、請求項5に記載のフリップチップ実装方法。 - 前記ディップ工程は、前記ディップ槽を減圧しながら行なわれる、請求項1に記載のフリップチップ実装方法。
- 前記ディップ工程は、前記溶融樹脂に温度勾配が設けられたディップ槽内で行なわれ、
前記溶融樹脂は、該溶融樹脂中に含有する半田粉が低温側領域において未溶融状態に、高温側領域において溶融状態に維持されており、前記一定の隙間をもって保持された半導体チップ及び回路基板は、前記ディップ槽内の低温側領域で所定時間ディップした後、高温側領域で所定時間ディップされる、請求項1に記載のフリップチップ実装方法。 - 複数の電極を有する基板の該電極上にバンプを形成するバンプ形成方法において、
前記基板に対して一定の隙間をもって対向する位置に平板を保持する工程と、
前記一定の隙間をもって保持された基板及び平板を、溶融した半田粉を含有した溶融樹脂が入ったディップ槽内に所定時間ディップする工程と
を含み、
前記ディップ工程において、前記溶融半田粉が、前記基板の電極上に自己集合することによって、前記電極上にバンプが形成されることを特徴とするバンプ形成方法。 - 前記ディップ工程の後、前記ディップ槽から前記基板及び平板を取り出し、前記基板と前記平板の隙間に浸透した前記溶融樹脂、及び前記平板を除去する工程をさらに含む、請求項9に記載のバンプ形成方法。
- 前記平板は、前記基板に形成された複数の電極に対向する位置に、前記電極と略同形状の複数の金属パターンが形成されている、請求項9に記載のバンプ形成方法。
- 前記基板は、回路基板、半導体チップ、または半導体ウエハである、請求項9に記載のバンプ形成方法。
- 半導体チップを回路基板にフリップチップ実装する実装装置であって、
前記半導体チップ及び前記回路基板を、一定の隙間をもって互いに対向させて保持する固定治具と、
溶融した半田粉を含有した溶融樹脂が入ったディップ槽と、
前記固定治具を前記ディップ槽内まで搬送を行なう搬送装置と
を備え、
前記半導体チップ及び前記回路基板を保持した固定治具を、前記搬送装置によって、前記ディップ槽内にディップし、前記溶融半田粉を、前記回路基板の接続端子と前記半導体チップの電極端子との間に自己集合させるとによって、当該端子間に接続体の形成を行うことを特徴とする、実装装置。 - 複数の電極を有する基板の該電極上にバンプを形成する実装装置であって、
前記基板に対して一定の隙間をもって対向する位置に平板を保持する固定治具と、
溶融した半田粉を含有した溶融樹脂が入ったディップ槽と、
前記固定治具を前記ディップ槽内まで搬送を行なう搬送装置と
を備え、
前記基板及び平板を保持した固定治具を、前記搬送装置によって、前記ディップ槽内にディップし、前記溶融半田粉を、前記基板の電極上に自己集合させることによって、前記電極上にバンプを形成することを特徴とする、実装装置。 - 前記搬送装置は、前記ディップ槽内で揺動運動を行なう機構を備えている、請求項13または14に記載の実装装置。
- 前記ディップ槽は、該ディップ槽内の前記溶融樹脂を流動させる機構を備えている、請求項13または14に記載の実装装置。
- 前記実装装置は、加熱手段をさらに備え、
前記半導体チップ及び回路基板、又は前記基板及び平板を保持した固定治具を、前記ディップ槽から取り出し、前記加熱手段に移送することによって、前記半導体チップ及び回路基板間の隙間、又は前記基板及び平板間の隙間に浸透した前記溶融樹脂を熱硬化させる、請求項13または14に記載の実装装置。 - 前記固定治具は、前記半導体チップ及び回路基板、又は前記基板及び平板を、それぞれ複数組づつ保持することができる、請求項13または14に記載の実装装置。
- 前記実装装置は、パーティクルカウンターをさらに備え、
前記パーティクルカウンターによって、前記溶融樹脂に含有する溶融半田粉の数または粒径を計測することによって、前記ディップ槽の品質管理を行なう、請求項13または14に記載の実装装置。 - 前記ディップ槽は、溶融した半田粉を含有した溶融樹脂を循環させる循環装置に連結され、
前記溶融した半田粉を含有した溶融樹脂を、前記ディップ槽及び前記循環装置間を循環させることによって、前記ディップ槽内の溶融樹脂に含有する溶融半田粉を一定の割合で維持する、請求項13または14に記載の実装装置。 - 複数の接続端子を有する回路基板と対向させて、複数の電極端子を有する半導体チップを配置し、前記回路基板の接続端子と前記半導体チップの電極端子とを電気的に接続するフリップチップ実装方法において、
前記半導体チップを、前記回路基板に対して一定の隙間をもって対向させて保持する工程と、
前記一定の隙間をもって保持された半導体チップ及び回路基板を、半田粉及び対流添加剤を含有した溶融樹脂が入ったディップ槽内に所定時間ディップする工程と、
前記ディップ槽から前記半導体チップ及び回路基板を取り出し、前記半導体チップと前記回路基板間の隙間に浸透した前記溶融樹脂を加熱させる工程と
を含み、
前記加熱工程において、前記半田粉が溶融するとともに、前記対流添加剤が沸騰して前記溶融樹脂中を対流することによって、前記溶融した半田粉が、前記回路基板の接続端子と前記半導体チップの電極端子との間に自己集合し、当該端子間に接続体が形成されることを特徴とする、フリップチップ実装方法。 - 前記加熱工程の後、前記半導体チップと前記回路基板間の隙間に浸透した前記溶融樹脂を硬化させ、前記半導体チップを前記回路基板に固定させる工程をさらに含む、請求項21に記載のフリップチップ実装方法。
- 複数の電極を有する基板の該電極上にバンプを形成するバンプ形成方法において、
前記基板に対して一定の隙間をもって対向する位置に平板を保持する工程と、
前記一定の隙間をもって保持された基板及び平板を、半田粉及び対流添加剤を含有した溶融樹脂が入ったディップ槽内に所定時間ディップする工程と、
前記ディップ槽から前記基板及び平板を取り出し、前記基板と前記平板間の隙間に浸透した前記溶融樹脂を加熱させる工程と
を含み、
前記加熱工程において、前記半田粉が溶融するとともに、前記対流添加剤が沸騰して前記溶融樹脂中を対流することによって、前記溶融した半田粉が、前記基板の電極上に自己集合し、該電極上にバンプが形成されることを特徴とする、バンプ形成方法。
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US20070243664A1 (en) | 2007-10-18 |
CN100585822C (zh) | 2010-01-27 |
US7927997B2 (en) | 2011-04-19 |
JP4495158B2 (ja) | 2010-06-30 |
WO2006098187A1 (ja) | 2006-09-21 |
US20110162578A1 (en) | 2011-07-07 |
CN101128924A (zh) | 2008-02-20 |
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