JPWO2006080153A1 - 半導体受光素子及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 230000005684 electric field Effects 0.000 claims abstract description 113
- 238000000034 method Methods 0.000 claims abstract description 52
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 38
- 239000001257 hydrogen Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000031700 light absorption Effects 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 abstract 1
- 229910020295 SiOyNz Inorganic materials 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 41
- 238000005253 cladding Methods 0.000 description 21
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 238000009826 distribution Methods 0.000 description 10
- 239000000969 carrier Substances 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- -1 radical hydrogen Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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Abstract
Description
Isao Watanabe, Takeshi Nakata, Masayoshi Tsuji, Kikuo Makita, Toshitaka Torikai, and Kencho Taguchi, J. Lightwave Technol., vol. 18, p. 2200-2207, Dec. 2000. S. Tanaka, S. Fujiki, T. tsuchiya, S. Tsuji, Monday Afternoon, OFC2003, vol. 1, 67
2 基板
3 クラッド層
4 増倍層
5 電界緩和層
6 吸収層
7 クラッド層
8 コンタクト層
9 表面保護膜
10 p電極
11 n電極
21 n電極
22 InP基板
23 n型InPクラッド層
24 InAlAs増倍層
25 p型InAlAs電界緩和層
26 InGaAs吸収層
27 p型InPクラッド層
28 p型InPコンタクト層
29 SiNx膜またはSiOyNz膜
30 p電極
31 n電極
41 InP絶縁基板
42 n型InPバッファ層
43 n型InGaAsPガイド層
44 InAlAs増倍層
45 InAlAs電界緩和層
46 InGaAs吸収層
47 p型InGaAsPガイド層
48 p型InPクラッド層
49 p型InGaAsコンタクト層
50 SiNx保護膜
51 p電極
52 反射防止膜
53 n電極
54 p型パット電極
55 段差緩和ポリイミド層
901 n電極
902 InP基板
903 n型InPガイド層
904 InGaAs吸収層
905 p型InPガイド層
906 p電極
911 n電極
912 基板
913 n型ガイド層
914 アバランシェ増倍層
915 電界緩和層
916 吸収層
917 p型ガイド層
918 p電極
919 側面保護層
920 p電極
したがって、この計算の結果、プロセス中に発生する電界緩和層のずれを18%以下に抑えることができれば、設計増倍電界強度600kV/cmの素子に対して、必ずある一定数(十分大きな数量の素子を作った場合)の完成素子を得ることが可能となる。電界緩和層のずれを15%以下に抑えることで、設計増倍電界強度600〜700kV/cmの素子で必ずある一定数の完成素子を得ることが可能となる。
Claims (8)
- 半導体基板上に光吸収層、アバランシェ増倍層、電界緩和層を含む半導体層より構成されるメサ型構造を有する半導体受光素子であって、
前記メサ型構造における前記光吸収層及び前記アバランシェ増倍層、前記電界緩和層の側面をSiNx膜またはSiOyNz膜で保護し、
且つ前記光吸収層及び前記アバランシェ増倍層、前記電界緩和層における少なくとも一部の水素濃度が前記電界緩和層におけるキャリア濃度の15%以下である半導体受光素子。 - 前記光吸収層及び前記アバランシェ増倍層、前記電界緩和層における少なくとも一部の水素濃度が、より好ましくは前記電界緩和層におけるキャリア濃度の10%以下である請求項1に記載の半導体受光素子。
- 前記半導体層が、III−V族半導体であり、
p型不純物がBe,Zn,Cd,Hg,Mg,C、n型不純物がSi,C,S,Se,Te,Oであることを特徴とする請求項1又は2記載の半導体受光素子。 - 半導体基板上に光吸収層、アバランシェ増倍層、電界緩和層を含む半導体層を有するメサ型半導体受光素子の製造方法であって、
メサ型半導体構造を形成する工程と、
メサ型半導体構造の側面に、少なくとも窒素源としてN2ガスを用いて、SiNx膜またはSiOyNz膜を形成する工程を備えた半導体受光素子の製造方法。 - 前記SiNx膜は、N2ガスに加えSiH4ガスを、SiOyNz膜はN2ガス、SiH4ガスに加えO2ガスまたはN2Oガスを用いて形成することを特徴とする請求項4に記載の半導体受光素子の製造方法。
- 前記SiNx膜またはSiOyNz膜は、ECR法によって製造することを特徴とする請求項4又は5に記載の半導体受光素子の製造方法。
- 半導体基板上に光吸収層、アバランシェ増倍層、電界緩和層を含む半導体層を有するメサ型半導体受光素子の製造方法であって、
メサ型半導体構造を形成する工程と、
メサ型半導体構造の側壁表面にSiNx膜またはSiOyNz膜を形成する工程と、
不活性ガス雰囲気中において450℃以上700℃以下で熱処理を行う工程を備えた半導体受光素子の製造方法。 - 前記SiNx膜はN2ガスまたはNH3ガス及びSiH4ガスを用いて、前記SiOyNz膜はN2ガスまたはNH3ガス及びSiH4ガス及びO2ガスを用いて形成することを特徴とする請求項7に記載の半導体受光素子の製造方法。
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KR101371401B1 (ko) * | 2010-11-03 | 2014-03-10 | 한국전자통신연구원 | 애벌런치 광다이오드 및 그 형성방법 |
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2005
- 2005-12-15 WO PCT/JP2005/023012 patent/WO2006080153A1/ja not_active Application Discontinuation
- 2005-12-15 US US11/815,003 patent/US20090050933A1/en not_active Abandoned
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US20100279457A1 (en) | 2010-11-04 |
WO2006080153A1 (ja) | 2006-08-03 |
JP4894752B2 (ja) | 2012-03-14 |
US20090050933A1 (en) | 2009-02-26 |
US8148229B2 (en) | 2012-04-03 |
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