JPWO2005056850A1 - 反射率維持特性に優れた銀合金 - Google Patents
反射率維持特性に優れた銀合金 Download PDFInfo
- Publication number
- JPWO2005056850A1 JPWO2005056850A1 JP2005516165A JP2005516165A JPWO2005056850A1 JP WO2005056850 A1 JPWO2005056850 A1 JP WO2005056850A1 JP 2005516165 A JP2005516165 A JP 2005516165A JP 2005516165 A JP2005516165 A JP 2005516165A JP WO2005056850 A1 JPWO2005056850 A1 JP WO2005056850A1
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- JP
- Japan
- Prior art keywords
- additive element
- silver alloy
- silver
- reflective film
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 38
- 238000012423 maintenance Methods 0.000 title description 3
- 239000000654 additive Substances 0.000 claims abstract description 28
- 230000000996 additive effect Effects 0.000 claims abstract description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052709 silver Inorganic materials 0.000 claims abstract description 26
- 239000004332 silver Substances 0.000 claims abstract description 26
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 6
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 6
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 5
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 3
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 3
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 3
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 3
- 239000011575 calcium Substances 0.000 claims abstract description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 239000011651 chromium Substances 0.000 claims abstract description 3
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 3
- 239000010941 cobalt Substances 0.000 claims abstract description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052802 copper Inorganic materials 0.000 claims abstract description 3
- 239000010949 copper Substances 0.000 claims abstract description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims abstract description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 3
- 239000011733 molybdenum Substances 0.000 claims abstract description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 239000010955 niobium Substances 0.000 claims abstract description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 3
- 239000010948 rhodium Substances 0.000 claims abstract description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical group [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 239000010937 tungsten Substances 0.000 claims abstract description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000005477 sputtering target Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 13
- 239000010408 film Substances 0.000 description 48
- 239000010409 thin film Substances 0.000 description 35
- 230000003287 optical effect Effects 0.000 description 30
- 238000012360 testing method Methods 0.000 description 28
- 230000007797 corrosion Effects 0.000 description 17
- 238000005260 corrosion Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- 238000005486 sulfidation Methods 0.000 description 7
- 230000007774 longterm Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 229910001279 Dy alloy Inorganic materials 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910000767 Tm alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- ANSCLLFNWCOPTH-UHFFFAOYSA-N dysprosium silver Chemical class [Ag].[Dy] ANSCLLFNWCOPTH-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- VBYGDWDYFSYLPW-UHFFFAOYSA-N silver thulium Chemical compound [Ag].[Ag].[Ag].[Tm] VBYGDWDYFSYLPW-UHFFFAOYSA-N 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (11)
- 銀を主成分とし、第1の添加元素として希土類元素を少なくとも1種含んでなる反射膜用の銀合金。
- 第1の添加元素は、ジスプロシウム、ツリウムの少なくともいずれかよりなる請求項1記載の反射膜用の銀合金。
- 第1の添加元素は、テルビウム、ガドリニウム、エルビウム、ネオジウム、ホルミウム、プラセオジム、サマリウム、ランタン、セリウム、イッテルビウム、ユーロピウムの少なくともいずれかよりなる請求項1記載の反射膜用の銀合金。
- 第2の添加元素として、ガリウムを添加する請求項1〜請求項3のいずれか1項に記載の反射膜用の銀合金。
- 第2の添加元素として、白金、パラジウムの少なくともいずれかを添加する請求項1〜請求項3のいずれか1項に記載の反射膜用の銀合金。
- 第2の添加元素として、マグネシウム、亜鉛、ニッケル、モリブデン、金、アルミニウムの少なくともいずれかを添加する請求項1〜請求項3のいずれか1項に記載の反射膜用の銀合金。
- 第2の添加元素として、銅、コバルト、錫、チタン、ビスマス、マンガン、スカンジウム、イットリウム、の少なくともいずれかを添加する請求項1〜請求項3のいずれか1項に記載の反射膜用の銀合金。
- 第2の添加元素として、シリコン、クロム、鉄、ジルコニウム、ニオブ、タンタル、タングステン、ロジウム、イリジウム、インジウム、鉛、カルシウム、アンチモン、ストロンチウム、ハフニウム、ゲルマニウム、ホウ素の少なくともいずれかを添加する請求項1〜請求項3のいずれか1項に記載の反射膜用の銀合金。
- 第1の添加元素と第2の添加元素との濃度の合計は、0.01〜5.0原子%である請求項1〜請求項8のいずれか1項に記載の反射膜用の銀合金。
- 第1の添加元素と第2の添加元素との濃度の合計は、0.01〜3.0原子%である請求項9記載の反射膜用の銀合金。
- 請求項1〜請求項10のいずれか1項に記載の銀合金からなるスパッタリングターゲット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003411719 | 2003-12-10 | ||
JP2003411719 | 2003-12-10 | ||
PCT/JP2004/018367 WO2005056850A1 (ja) | 2003-12-10 | 2004-12-09 | 反射率維持特性に優れた銀合金 |
Publications (2)
Publication Number | Publication Date |
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JPWO2005056850A1 true JPWO2005056850A1 (ja) | 2007-12-13 |
JP4351216B2 JP4351216B2 (ja) | 2009-10-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005516165A Active JP4351216B2 (ja) | 2003-12-10 | 2004-12-09 | 反射率維持特性に優れた銀合金 |
Country Status (4)
Country | Link |
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US (1) | US7575714B2 (ja) |
EP (1) | EP1734139A4 (ja) |
JP (1) | JP4351216B2 (ja) |
WO (1) | WO2005056850A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6522584B1 (en) | 2001-08-02 | 2003-02-18 | Micron Technology, Inc. | Programming methods for multi-level flash EEPROMs |
US7514037B2 (en) * | 2002-08-08 | 2009-04-07 | Kobe Steel, Ltd. | AG base alloy thin film and sputtering target for forming AG base alloy thin film |
US20070020138A1 (en) * | 2003-12-10 | 2007-01-25 | Tomokazu Obata | Silver alloy excellent inreflectance maintenance property |
JP4377861B2 (ja) | 2005-07-22 | 2009-12-02 | 株式会社神戸製鋼所 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
JP4201006B2 (ja) * | 2005-10-31 | 2008-12-24 | ソニー株式会社 | 光記録媒体 |
JP4377877B2 (ja) | 2005-12-21 | 2009-12-02 | ソニー株式会社 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
JP4864538B2 (ja) * | 2006-05-19 | 2012-02-01 | 三菱マテリアル株式会社 | 光記録媒体用半透明反射膜およびこの半透明反射膜を形成するためのAg合金スパッタリングターゲット |
CN101942644B (zh) | 2005-12-29 | 2013-01-02 | 三菱麻铁里亚尔株式会社 | 光记录介质用半透明反射膜和反射膜、以及用于形成这些半透明反射膜和反射膜的Ag合金溅射靶 |
JP5287028B2 (ja) * | 2008-08-20 | 2013-09-11 | 三菱マテリアル株式会社 | 光記録媒体の半透明反射膜形成用Ag合金スパッタリングターゲット |
KR20150034666A (ko) * | 2013-09-26 | 2015-04-03 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 아연 설파이드 경도의 증가 |
CN110106385A (zh) * | 2019-05-16 | 2019-08-09 | 杭州辰卓科技有限公司 | 一种具有斯斑效应18k耐腐蚀耐脆断金合金及其工艺 |
CN110079695A (zh) * | 2019-05-20 | 2019-08-02 | 杭州辰卓科技有限公司 | 一种具有珍珠色泽的耐脆断斯斑银合金及其工艺 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11134715A (ja) | 1997-10-28 | 1999-05-21 | Kao Corp | 光記録媒体 |
JP4007702B2 (ja) | 1998-10-05 | 2007-11-14 | 株式会社フルヤ金属 | 薄膜形成用スパッタリングターゲット材およびそれを用いて形成されて成る薄膜、および光学記録媒体 |
JP3365762B2 (ja) | 2000-04-28 | 2003-01-14 | 株式会社神戸製鋼所 | 光情報記録媒体用の反射層または半透明反射層、光情報記録媒体及び光情報記録媒体用スパッタリングターゲット |
DE60133895D1 (de) * | 2000-06-16 | 2008-06-19 | Mitsubishi Kagaku Media Co Ltd | Optisches informationsaufzeichnungsmedium |
SG116432A1 (en) * | 2000-12-26 | 2005-11-28 | Kobe Steel Ltd | Reflective layer or semi-transparent reflective layer for use in optical information recording media, optical information recording media and sputtering target for use in the optical information recording media. |
JP3656898B2 (ja) | 2001-01-31 | 2005-06-08 | 日立金属株式会社 | 平面表示装置用Ag合金系反射膜 |
JP4047591B2 (ja) | 2001-02-21 | 2008-02-13 | 株式会社神戸製鋼所 | 光反射膜、反射型液晶表示素子および光反射膜用スパッタリングターゲット |
JP2002319185A (ja) | 2001-04-23 | 2002-10-31 | Sumitomo Metal Mining Co Ltd | 光記録ディスク反射膜用銀合金 |
JP3778425B2 (ja) * | 2001-10-03 | 2006-05-24 | 日立金属株式会社 | 表示装置に用いられる電子部品用Ag合金膜および表示装置に用いられる電子部品用Ag合金膜形成用スパッタリングターゲット材 |
JP3772971B2 (ja) | 2001-11-19 | 2006-05-10 | 三菱マテリアル株式会社 | 光記録媒体の反射層形成用銀合金スパッタリングターゲット |
US7022384B2 (en) * | 2002-01-25 | 2006-04-04 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Reflective film, reflection type liquid crystal display, and sputtering target for forming the reflective film |
JP4103067B2 (ja) | 2002-03-25 | 2008-06-18 | 日立金属株式会社 | 平面表示装置用Ag合金系反射膜 |
KR100506474B1 (ko) * | 2002-03-25 | 2005-08-03 | 히타치 긴조쿠 가부시키가이샤 | Ag 합금막 및 Ag 합금막 형성용 스퍼터링 타겟재 |
JP2004131747A (ja) | 2002-10-08 | 2004-04-30 | Sumitomo Metal Mining Co Ltd | 表示デバイス用銀合金及びこの銀合金を用いて形成した電極膜または反射膜を使用する表示デバイス |
-
2004
- 2004-12-09 EP EP04820257A patent/EP1734139A4/en not_active Withdrawn
- 2004-12-09 JP JP2005516165A patent/JP4351216B2/ja active Active
- 2004-12-09 WO PCT/JP2004/018367 patent/WO2005056850A1/ja active Application Filing
- 2004-12-09 US US10/577,870 patent/US7575714B2/en active Active
Also Published As
Publication number | Publication date |
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EP1734139A1 (en) | 2006-12-20 |
JP4351216B2 (ja) | 2009-10-28 |
WO2005056850A1 (ja) | 2005-06-23 |
EP1734139A4 (en) | 2009-03-18 |
US7575714B2 (en) | 2009-08-18 |
US20070026187A1 (en) | 2007-02-01 |
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