JPWO2003066486A1 - Transport type substrate processing equipment - Google Patents

Transport type substrate processing equipment Download PDF

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JPWO2003066486A1
JPWO2003066486A1 JP2003565876A JP2003565876A JPWO2003066486A1 JP WO2003066486 A1 JPWO2003066486 A1 JP WO2003066486A1 JP 2003565876 A JP2003565876 A JP 2003565876A JP 2003565876 A JP2003565876 A JP 2003565876A JP WO2003066486 A1 JPWO2003066486 A1 JP WO2003066486A1
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substrate
liquid
chamber
chemical
avoiding portion
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JP4044047B2 (en
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田内　仁
仁 田内
小泉　晴彦
晴彦 小泉
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Sumitomo Precision Products Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece

Abstract

液避け部（３０）の出口を基板（１０）が通過する段階から下流側の薬液処理部で薬液吐出操作を開始した場合にも、上流側の受け入れ部における薬液汚染を防止する。液避け部（３０）内を少なくとも１つの隔壁（３２ａ，３２ｂ）により基板搬送方向で複数室（３３ａ，３３ｂ，３３ｃ）に区画し、液避け部（３０）内の最上流側の室（３３ａ）を除く少なくとも１つの室（３３ｂ）を負圧に吸引する。液避け部（３０）における最上流側の室（３３ａ）を常圧または陽圧に管理する。基板（１０）の前端が下流側の薬液処理部における薬液吐出開始位置に到達した時点で、基板（１０）の後端が液避け部（３０）における最上流側の室（３３ａ）を抜けるように、隔壁位置を設定し、好ましくは、前記到達時点において、基板（１０）の後端が液避け部（３０）における最下流側の室（３３ｃ）内に進入するように、隔壁位置を設定する。Even when the chemical solution discharge operation is started in the downstream chemical solution processing unit from the stage where the substrate (10) passes through the outlet of the liquid avoiding unit (30), chemical contamination in the upstream receiving unit is prevented. The liquid avoiding portion (30) is partitioned into a plurality of chambers (33a, 33b, 33c) in the substrate transport direction by at least one partition wall (32a, 32b), and the most upstream chamber (33a) in the liquid avoiding portion (30). At least one chamber (33b) except for) is sucked to a negative pressure. The most upstream chamber (33a) in the liquid avoidance section (30) is managed at normal pressure or positive pressure. When the front end of the substrate (10) reaches the chemical discharge start position in the downstream chemical processing unit, the rear end of the substrate (10) passes through the most upstream chamber (33a) in the liquid avoiding portion (30). The partition position is preferably set so that the rear end of the substrate (10) enters the most downstream chamber (33c) in the liquid avoiding portion (30) at the time of arrival. To do.

Description

技術分野
本発明は、液晶表示装置用ガラス基板の製造に好適に使用される搬送式基板処理装置に関する。
背景技術
液晶表示装置に使用されるガラス基板は、素材であるガラス基板の表面にエッチング、剥離等の化学処理を繰り返し施すことにより製造される。その基板処理装置はドライ式とウェット式に大別され、ウェット式はバッチ式と枚葉式に分けられる。更に、枚葉式は定位置回転式とローラ搬送等による搬送式とに細分される。
これらの基板処理装置のうち、搬送式のものは、基板を水平方向に搬送しながら基板の表面に処理液を供給する基本構造になっており、高効率なことから以前よりエッチング処理や剥離処理に使用されている。
搬送式基板処理装置では、基板が受け入れ部（ローダ部）、液避け部、薬液処理部、洗浄部及び液切り部を順番に通過する。薬液処理部では、基板搬送ラインの上方に配置されたノズルからエッチング液、剥離液等の薬液が吐出され、その薬液中を基板が通過することにより、基板の表面全体に薬液が供給される。この薬液処理により、基板の表面が選択的に化学処理される。
ところで、薬液処理部の上流側、即ち薬液処理部と受け入れ部の間に配置される液避け部は、下流側の薬液処理部で使用される薬液、更には薬液処理部内の薬液雰囲気が、複雑な受け入れ機構を備えた上流側の受け入れ部に侵入するを防止することを目的とした、言わばバッファ（緩衝部）である。
この目的を達成するために、液避け部内が負圧に吸引されるだけでなく、液避け部の全長が、基板が完全に収容され得るように、基板の長さより大きく設定されており、且つ、その前壁及び後壁に設けられた基板入口及び基板出口にはシャッターが装備されている。そして、入口が開放し、出口が閉じた状態で液避け部内に基板が進入すると、一旦基板が停止し、入口が閉止する。その後、出口が開放し、液避け部から下流側の薬液処理部へ基板が進出していく。このようなタイミングで基板の搬送、並びに入口及び出口のシャッターが操作されることにより、一時的にしろ受け入れ部が薬液処理部と直結する事態が回避され、薬液による受け入れ部内の汚染が防止されることになる。
ところが、実際の操業では、このような２重、３重の配慮にもかかわらず、薬液による受け入れ部内の汚染が防止されないのが現状である。その大きな原因として、基板が出口を通って液避け部から薬液処理部へ侵入する途中で、薬液処理部では薬液の吐出が始まり、基板の上面を伝って多量の薬液が液避け部に侵入して、液避け部が薬液雰囲気で満たされ、液避け部内が負圧に排気されているとは言え、入口が開放したときに液避け部から受け入れ部への薬液雰囲気の侵入が避けられないことが考えられる。
基板が液避け部を完全に出て、出口のシャッターを閉じてから薬液処理部での薬液吐出を開始すれば、液避け部への薬液の侵入が抑制され、受け入れ部内の汚染も抑制されると考えられるが、その一方で薬液の吐出開始が遅れ、薬液処理部が長くなるというスループット性、設備規模上の大きな問題が発生する。
本発明の目的は、液避け部の出口を基板が通過する段階から下流側の薬液処理部で薬液吐出操作を開始しても、上流側の受け入れ部の薬液汚染を効果的に防止できる搬送式基板処理装置を提供することにある。
発明の開示
上記目的を達成するために、本発明の搬送式基板処理装置は、基板を水平方向へ搬送して複数の処理部に通過させ、複数の処理部の少なくとも１つで薬液処理を行うと共に、薬液処理部の上流側に液避け部を設けた搬送式基板処理装置において、前記液避け部内を少なくとも１つの隔壁により基板搬送方向で複数室に区画し、前記液避け部内の最上流側の室内を除く少なくとも１つの室内を負圧に吸引する排気手段を設けたものである。
本発明の搬送式基板処理装置においては、液避け部における複数の室内のうちの最上流側の室内を除く少なくとも１つの室内が負圧に吸引される。２室の場合は下流側の室内が負圧に吸引される。３室以上の場合は、最上流側の室内を除いた２以上の室内の少なくとも１つが負圧に吸引される。これにより、最上流側の室内が常時清浄な雰囲気に維持され、液避け部の上流側と接する部分に常時清浄なゾーンが形成される。その結果、液避け部の上流側における汚染が防止される。
複数室の圧力管理については、液避け部における最上流側の室内を常圧又は陽圧に管理することが好ましい。また、液避け部を基板搬送方向で３以上の室に区画し、液避け部における最上流側の室内及び最下流側の室内を除く少なくとも１つの室内を負圧に吸引することが好ましい。ここで、特定の室内を負圧に管理するだけでなく、液避け部における最上流側の室内から最下流側の室内にかけて段階的に圧力を低下させることも有効である。
液避け部を仕切る隔壁については、液避け部を基板搬送方向で３以上の室に区画し、基板の前端が下流側の薬液処理部における薬液吐出開始位置に到達した時点で、基板の後端が液避け部における最上流側の室内を抜け出るように、隔壁位置を設定することが好ましく、基板の前端が薬液処理部における薬液吐出開始位置に到達した時点で基板の後端が液避け部における最下流側の室内に進入するように、隔壁位置を設定することがより好ましい。
これにより、下流側の薬液処理部で吐出される薬液が、基板の上面を伝って最上流側の室内に侵入するおそれがなくなり、液避け部の上流側における汚染がより効果的に防止される。
また、基板を一旦液避け部内に収容し、液避け部の上流側と下流側が連通する事態を回避するために、液避け部の全長を基板の長さより大とし、且つ、液避け部の基板入口及び基板出口にシャッターを装備することが好ましい。
発明を実施するための最良の形態
以下に本発明の実施形態を図面に基づいて詳細に説明する。
本実施形態の基板処理装置は、液晶表示装置用ガラス基板の製造に使用されるエッチング装置である。この基板処理装置は、図１に示すように、基板１０の搬送方向へ順番に配列された受け入れ部２０、液避け部３０、薬液処理部４０、洗浄部５０及び液切り部６０を備えている。各部は、基板１０を水平に支持して水平方向へ搬送する多数の搬送ローラ２１，３１，４１，５１，６１をそれぞれ装備している。
受け入れ部２０と薬液処理部４０の間に設けられたバッファ（緩衝部）としての液避け部３０は、図１及び図２に示すように、２つの隔壁３２ａ，３２ｂにより基板１０の搬送方向で３室３３ａ，３３ｂ，３３ｃに分割区画されている。上流側の受け入れ部２０との隔壁に設けられた入口には開閉式のシャッター３４ａが装備されている。同様に、下流側の薬液処理部４０との隔壁に設けられた出口にも開閉式のシャッター３４ｂが装備されている。また、前記隔壁３２ａ，３２ｂには基板１０が通過するスリット状の通過口が設けられている。
上流側の受け入れ部２０に隣接する上流側の第１室３３ａはクリーンルームとなり、若干陽圧に管理される構成になっている。中央の第２室３３ｂは、底面に設けられた排気口３５より内部が負圧に吸引排気される構成になっている。下流側の薬液処理部４０に隣接する第３室３３ｃは、薬液処理部４０から侵入する薬液（ここではエッチング液）を排出するために、底面に排液口３６を設けた構造になっている。
液避け部２０の全長Ｌ１は基板１０の長さＬ２より大である。また、２番目の隔壁３２ｂから下流側の薬液処理部４０における薬液吐出開始位置までの距離Ｌ３は、基板１０の長さＬ２より大に設定されている。
薬液処理部４０には、基板１０の上面に上方から薬液（ここではエッチング液）を供給するノズルユニット４２が、基板１０の搬送ラインの上方に位置にして設けられている。
洗浄部５０には、基板１０の上面に上方から純水をシャワー状に散布する第１のシャワーユニット５２と、基板１０の下面に下方から純水をシャワー状に散布する第２のシャワーユニット５３が、基板１０の搬送ラインを挟んで設けられている。
液切り部６０には、基板１０の搬送ラインを上下から挟むように配置された上下一対のエアナイフ用のスリットノズル６２，６３が設けられている。上側のスリットノズル６２は、基板１０の上面に全幅にわたってエアを薄膜状に吹き付けることにより、洗浄後の基板１０の上面から水滴・水分を除去する。下側のスリットノズル６３は、基板１０の下面に全幅にわたってエアを薄膜状に吹き付けることにより、洗浄後の基板１０の下面から水滴・水分を除去する。上下のスリットノズル６２，６３は、水滴・水分の除去効率を高めるために、側面視で基板１０の搬送方向上流側に傾斜し、平面視では側方へ傾斜している。
本実施形態の基板処理装置においては、基板１０が受け入れ部２０、液避け部３０、薬液処理部４０、洗浄部５０及び液切り部６０を順に通過することにより、基板１０の上面に薬液処理（ここではエッチング処理）が施され、上下面が洗浄された後、乾燥処理される。
基板１０が受け入れ部２０から液避け部３０へ進入するとき、両部を仕切るシャッター３４ａが開方向へ操作され、入口が開放される。このとき、中央の第２室３３ｂは負圧に排気されている。また、液避け部４０と薬液処理部４０を仕切るシャッター３４ｂは閉方向へ操作され、出口は閉止している。この状態で、基板１０は液避け部３０内へ進入する。基板１０が液避け部３０内に完全に進入すると、その基板１０は一旦停止し、この間に先ずシャッター３４ａが閉じ、次いでシャッター３４ｂが開く。こうすることにより、受け入れ部２０と薬液処理部４０が直結する事態が回避される。
シャッター３４ｂが開くと、基板１０の搬送が再開され、基板１０は液避け部３０から薬液処理部４０へ出でいく。そして、基板１０の先端がノズルユニット４２に達した時点で薬液吐出が開始される。
薬液吐出が始まると、基板１０の上面を伝って薬液が液避け部３０に多量に侵入する。しかし、薬液吐出が開始した時点で、基板１０の後端は第３室３３ｃに完全に進入している。このため、液避け部３０に多量に侵入する薬液は、第３室３３ｃのみに入り、第１室３３ａ及び第２室３３ｂには入らない。第３室３３ｃに侵入する薬液は、第３室３３ｃに溜められた純水により希釈され、排液口３６より逐次外部へ排出される。
このとき、第１室３３ａは陽圧に管理され、第２室３３ｂは負圧に吸引されている。このため、第３室３３ｃから直接、或いは薬液処理部４０から第３室３３ｃを介して薬液の蒸気が第２室３３ｂに侵入するが、同時に、第１室３３ａから第２室３３ｂへの気流も形成される。このため、薬液やその蒸気が第１室３３ａに侵入する事態は回避される。即ち、受け入れ部２０と接する第１室３３ａは、液・ガスの両面から常時なクリーンなゾーンになる。このため、薬液雰囲気が受け入れ部２０に侵入する危険性は皆無となる。
このように、受け入れ部２０の下流側に配置される液避け部３０を３室に分け、中央の第２室３３ｂを負圧に吸引すると共に、基板１０の上面を伝って薬液が第２室３３ｂや上流側の第１室３３ａに侵入しない工夫を講じることにより、薬液に汚染されない常時クリーンな領域を、液避け部３０内の受け入れ部２０と隣接する部分に形成することができる。これにより、基板１０が液避け部３０から抜け出るのを待たず、基板１０が液避け部３０の出口を通過する途中から薬液処理部４０で薬液の吐出を開始するにもかかわらず、受け入れ部２０内の薬液による汚染を完全に防止することが可能になる。
ちなみに、基板１０が液避け部３０の出口を通過し終え、そのシャッター３４ｂを閉じてから薬液処理を開始する構成にすると、薬液処理部４０内のノズルユニット４２より前方に基板１０の長さを超えるスペースが必要になり、装置が大型化する。また、処理時間が長くなり、スループット性が悪化する。
なお、上記実施形態はエッチング装置であるが、剥離装置にも同様に適用可能である。
産業上の利用可能性
以上に説明したとおり、本発明の基板処理装置は、基板を水平方向へ搬送して複数の処理部に通過させ、複数の処理部の少なくとも１つで薬液処理を行うと共に、薬液処理部の上流側に液避け部を設けた搬送式基板処理装置において、前記液避け部内を複数の隔壁により基板搬送方向で複数室に区画し、前記液避け部内の最上流側の室内を除く少なくとも１の室内を負圧に吸引することにより、液避け部の出口を通過する段階から下流側の薬液処理部でシャワー等の薬液散布操作を開始しても、上流側の受け入れ部の薬液汚染を効果的に防止することができる。
【図面の簡単な説明】
図１は本発明の一実施形態を示す基板処理装置の概略側面図、図２は液避け部の概略平面図である。TECHNICAL FIELD The present invention relates to a transfer type substrate processing apparatus suitably used for manufacturing a glass substrate for a liquid crystal display device.
BACKGROUND ART A glass substrate used in a liquid crystal display device is manufactured by repeatedly performing chemical treatments such as etching and peeling on the surface of a glass substrate as a material. The substrate processing apparatus is roughly classified into a dry type and a wet type, and the wet type is classified into a batch type and a single wafer type. Further, the single wafer type is subdivided into a fixed position rotation type and a conveyance type by roller conveyance or the like.
Among these substrate processing devices, the transport type has a basic structure that supplies the processing liquid to the surface of the substrate while transporting the substrate in the horizontal direction. Is used.
In the transport type substrate processing apparatus, the substrate sequentially passes through the receiving unit (loader unit), the liquid avoiding unit, the chemical processing unit, the cleaning unit, and the liquid draining unit. In the chemical solution processing unit, a chemical solution such as an etching solution or a stripping solution is discharged from a nozzle disposed above the substrate transfer line, and the chemical solution is supplied to the entire surface of the substrate by passing through the chemical solution. By this chemical treatment, the surface of the substrate is selectively chemically treated.
By the way, the upstream side of the chemical solution processing unit, that is, the liquid avoidance unit disposed between the chemical solution processing unit and the receiving unit has a complicated chemical solution used in the chemical solution processing unit on the downstream side, and further, the chemical solution atmosphere in the chemical solution processing unit is complicated. It is a so-called buffer (buffer part) for the purpose of preventing entry into an upstream receiving part having a receiving mechanism.
In order to achieve this object, not only is the inside of the liquid avoiding portion sucked to a negative pressure, but the total length of the liquid avoiding portion is set larger than the length of the substrate so that the substrate can be completely accommodated, and The substrate entrance and the substrate exit provided on the front wall and the rear wall are equipped with shutters. When the substrate enters the liquid avoiding portion with the inlet opened and the outlet closed, the substrate is temporarily stopped and the inlet is closed. Thereafter, the outlet is opened, and the substrate advances from the liquid avoiding portion to the downstream chemical processing portion. By transporting the substrate at this timing and operating the entrance and exit shutters, a situation where the margin receiving part is temporarily connected directly to the chemical processing unit is avoided, and contamination in the receiving part due to the chemical is prevented. It will be.
However, in actual operation, in spite of such double and triple considerations, the current situation is that contamination in the receiving part by the chemical solution is not prevented. The major cause is that the chemical solution starts to be discharged from the liquid avoiding part through the outlet and enters the chemical avoiding part, and a large amount of chemical liquid enters the liquid avoiding part along the upper surface of the substrate. Although the liquid avoiding part is filled with the chemical atmosphere and the inside of the liquid avoiding part is evacuated to a negative pressure, it is inevitable that the chemical avoiding part enters the receiving part from the liquid avoiding part when the inlet is opened. Can be considered.
If the substrate completely exits the liquid avoiding part and closes the outlet shutter and starts discharging the chemical liquid in the chemical processing part, the invasion of the chemical liquid into the liquid avoiding part is suppressed, and the contamination in the receiving part is also suppressed. However, on the other hand, the start of the discharge of the chemical solution is delayed and the chemical solution processing unit becomes long, which causes a serious problem in terms of throughput and facility scale.
An object of the present invention is to provide a conveyance system that can effectively prevent chemical contamination of an upstream receiving portion even when a chemical discharge operation is started in a downstream chemical processing section from the stage where the substrate passes through the outlet of the liquid avoidance portion. It is to provide a substrate processing apparatus.
DISCLOSURE OF THE INVENTION In order to achieve the above object, a transport type substrate processing apparatus according to the present invention transports a substrate in a horizontal direction and passes it through a plurality of processing units, and performs a chemical treatment in at least one of the plurality of processing units. In addition, in the transport type substrate processing apparatus provided with the liquid avoiding part upstream of the chemical processing part, the liquid avoiding part is partitioned into a plurality of chambers in the substrate transport direction by at least one partition wall, and the most upstream side in the liquid avoiding part Exhaust means for sucking at least one chamber excluding the other chamber to a negative pressure is provided.
In the transport type substrate processing apparatus according to the present invention, at least one of the plurality of chambers in the liquid avoiding portion excluding the most upstream chamber is sucked to a negative pressure. In the case of two chambers, the downstream chamber is sucked to a negative pressure. In the case of three or more rooms, at least one of the two or more rooms excluding the most upstream room is sucked to a negative pressure. As a result, the interior of the uppermost stream side is always maintained in a clean atmosphere, and a constantly clean zone is formed in a portion in contact with the upstream side of the liquid avoiding portion. As a result, contamination on the upstream side of the liquid avoiding portion is prevented.
Regarding the pressure management of the plurality of chambers, it is preferable to manage the chamber on the most upstream side in the liquid avoiding portion at normal pressure or positive pressure. Further, it is preferable that the liquid avoiding portion is partitioned into three or more chambers in the substrate transport direction, and at least one chamber excluding the most upstream chamber and the most downstream chamber in the liquid avoiding portion is sucked to a negative pressure. Here, it is effective not only to manage a specific chamber at a negative pressure but also to reduce the pressure stepwise from the most upstream chamber to the most downstream chamber in the liquid avoidance section.
For the partition that divides the liquid avoiding part, the liquid avoiding part is divided into three or more chambers in the substrate transport direction, and when the front end of the substrate reaches the chemical discharge start position in the downstream chemical processing unit, the rear end of the substrate It is preferable to set the partition wall position so that the liquid exits from the most upstream chamber in the liquid avoiding portion, and when the front end of the substrate reaches the chemical liquid discharge start position in the chemical processing portion, the rear end of the substrate is in the liquid avoiding portion. It is more preferable to set the partition wall position so as to enter the most downstream room.
As a result, there is no possibility that the chemical discharged from the downstream chemical processing unit will enter the uppermost stream chamber along the upper surface of the substrate, and contamination on the upstream side of the liquid avoiding unit is more effectively prevented. .
Further, in order to temporarily store the substrate in the liquid avoiding portion and avoid the situation where the upstream side and the downstream side of the liquid avoiding portion communicate with each other, the total length of the liquid avoiding portion is larger than the length of the substrate, and the substrate of the liquid avoiding portion It is preferable to equip the entrance and the substrate exit with shutters.
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the drawings.
The substrate processing apparatus of this embodiment is an etching apparatus used for manufacturing a glass substrate for a liquid crystal display device. As shown in FIG. 1, the substrate processing apparatus includes a receiving unit 20, a liquid avoiding unit 30, a chemical processing unit 40, a cleaning unit 50, and a liquid draining unit 60 that are sequentially arranged in the transport direction of the substrate 10. . Each unit is equipped with a large number of transport rollers 21, 31, 41, 51, 61 for supporting the substrate 10 horizontally and transporting it horizontally.
As shown in FIGS. 1 and 2, the liquid avoiding unit 30 provided as a buffer (buffer unit) provided between the receiving unit 20 and the chemical solution processing unit 40 is provided in the transport direction of the substrate 10 by two partition walls 32 a and 32 b. It is divided into three chambers 33a, 33b and 33c. The entrance provided in the partition wall with the upstream receiving part 20 is equipped with an openable / closable shutter 34a. Similarly, an opening / closing shutter 34b is also provided at an outlet provided in a partition wall with the downstream chemical solution processing unit 40. The partition walls 32a and 32b are provided with slit-shaped passage openings through which the substrate 10 passes.
The upstream first chamber 33a adjacent to the upstream receiving portion 20 is a clean room and is configured to be managed at a slight positive pressure. The central second chamber 33b is configured such that the inside is sucked and exhausted to a negative pressure from an exhaust port 35 provided on the bottom surface. The third chamber 33c adjacent to the chemical treatment unit 40 on the downstream side has a structure in which a liquid discharge port 36 is provided on the bottom surface for discharging the chemical solution (here, etching solution) entering from the chemical treatment unit 40. .
The total length L1 of the liquid avoiding portion 20 is larger than the length L2 of the substrate 10. In addition, a distance L3 from the second partition wall 32b to the chemical liquid discharge start position in the chemical liquid processing unit 40 on the downstream side is set to be greater than the length L2 of the substrate 10.
The chemical liquid processing unit 40 is provided with a nozzle unit 42 that supplies a chemical liquid (here, an etching liquid) from above to the upper surface of the substrate 10 at a position above the conveyance line of the substrate 10.
The cleaning unit 50 includes a first shower unit 52 that sprays pure water on the upper surface of the substrate 10 from above, and a second shower unit 53 that sprays pure water on the lower surface of the substrate 10 from below. However, it is provided across the conveyance line of the substrate 10.
The liquid draining unit 60 is provided with a pair of slit nozzles 62 and 63 for an upper and lower air knife arranged so as to sandwich the transport line of the substrate 10 from above and below. The upper slit nozzle 62 removes water droplets and moisture from the upper surface of the substrate 10 after cleaning by spraying air over the entire upper surface of the substrate 10 in a thin film shape. The lower slit nozzle 63 removes water droplets and moisture from the bottom surface of the substrate 10 after cleaning by blowing air over the entire bottom surface of the substrate 10 in a thin film shape. The upper and lower slit nozzles 62 and 63 are inclined to the upstream side in the transport direction of the substrate 10 in a side view and inclined to the side in a plan view in order to increase the efficiency of removing water droplets and moisture.
In the substrate processing apparatus of the present embodiment, the substrate 10 passes through the receiving unit 20, the liquid avoiding unit 30, the chemical processing unit 40, the cleaning unit 50, and the liquid draining unit 60 in order, so that the chemical processing ( Here, an etching process) is performed, and the upper and lower surfaces are cleaned and then dried.
When the substrate 10 enters the liquid avoiding portion 30 from the receiving portion 20, the shutter 34a that partitions both portions is operated in the opening direction, and the entrance is opened. At this time, the central second chamber 33b is exhausted to a negative pressure. Further, the shutter 34b that partitions the liquid avoiding section 40 and the chemical processing section 40 is operated in the closing direction, and the outlet is closed. In this state, the substrate 10 enters the liquid avoiding portion 30. When the substrate 10 completely enters the liquid avoiding portion 30, the substrate 10 is temporarily stopped. During this time, the shutter 34a is first closed and then the shutter 34b is opened. By doing so, a situation in which the receiving unit 20 and the chemical solution processing unit 40 are directly connected is avoided.
When the shutter 34b is opened, the conveyance of the substrate 10 is resumed, and the substrate 10 goes out from the liquid avoiding unit 30 to the chemical processing unit 40. Then, when the tip of the substrate 10 reaches the nozzle unit 42, the discharge of the chemical solution is started.
When the discharge of the chemical liquid starts, the chemical liquid enters the liquid avoiding portion 30 in large quantities along the upper surface of the substrate 10. However, the rear end of the substrate 10 has completely entered the third chamber 33c when the chemical liquid discharge is started. For this reason, the chemical | medical solution which penetrate | invades into the liquid avoiding part 30 in large quantities enters only the 3rd chamber 33c, and does not enter the 1st chamber 33a and the 2nd chamber 33b. The chemical solution that enters the third chamber 33c is diluted with pure water stored in the third chamber 33c, and is sequentially discharged to the outside from the drain port 36.
At this time, the first chamber 33a is managed at a positive pressure, and the second chamber 33b is sucked at a negative pressure. For this reason, although the vapor | steam of a chemical | medical solution penetrate | invades into the 2nd chamber 33b directly from the 3rd chamber 33c or via the 3rd chamber 33c from the chemical | medical solution process part 40, the airflow from the 1st chamber 33a to the 2nd chamber 33b simultaneously Is also formed. For this reason, the situation where a chemical | medical solution and its vapor | steam penetrate | invade into the 1st chamber 33a is avoided. That is, the first chamber 33a in contact with the receiving unit 20 is a clean zone that is always clean from both the liquid and gas sides. For this reason, there is no risk of the chemical atmosphere entering the receiving unit 20.
As described above, the liquid avoiding portion 30 disposed on the downstream side of the receiving portion 20 is divided into three chambers, the central second chamber 33b is sucked to a negative pressure, and the chemical solution is transferred to the second chamber along the upper surface of the substrate 10. By devising not to enter the first chamber 33a on the upstream side 33b or the upstream side, a constantly clean region that is not contaminated by the chemical solution can be formed in a portion adjacent to the receiving portion 20 in the liquid avoiding portion 30. Thus, the receiving unit 20 does not wait for the substrate 10 to escape from the liquid avoiding unit 30 and the chemical processing unit 40 starts to discharge the chemical liquid while the substrate 10 passes through the outlet of the liquid avoiding unit 30. It is possible to completely prevent contamination by the chemical solution inside.
Incidentally, when the substrate 10 finishes passing through the outlet of the liquid avoiding portion 30 and the shutter 34b is closed and the chemical processing is started, the length of the substrate 10 is increased in front of the nozzle unit 42 in the chemical processing portion 40. More space is required and the equipment becomes larger. In addition, the processing time becomes long, and the throughput performance deteriorates.
In addition, although the said embodiment is an etching apparatus, it is applicable similarly to a peeling apparatus.
INDUSTRIAL APPLICABILITY As described above, the substrate processing apparatus of the present invention transports a substrate in the horizontal direction and passes it through a plurality of processing units, and performs chemical processing at at least one of the plurality of processing units. In the transport type substrate processing apparatus provided with a liquid avoiding part upstream of the chemical processing part, the liquid avoiding part is partitioned into a plurality of chambers in the substrate transport direction by a plurality of partition walls, and the most upstream chamber in the liquid avoiding part Even if a chemical spraying operation such as a shower is started in the downstream chemical processing section from the stage of passing through the outlet of the liquid avoiding section by sucking at least one chamber excluding Chemical contamination can be effectively prevented.
[Brief description of the drawings]
FIG. 1 is a schematic side view of a substrate processing apparatus showing an embodiment of the present invention, and FIG. 2 is a schematic plan view of a liquid avoiding portion.

Claims (7)

基板を水平方向へ搬送して複数の処理部に通過させ、複数の処理部の少なくとも１つで薬液処理を行うと共に、薬液処理部の上流側に液避け部を設けた搬送式基板処理装置において、前記液避け部内を少なくとも１つの隔壁により基板搬送方向で複数室に区画し、前記液避け部内の最上流側の室内を除く少なくとも１つの室内を負圧に吸引する排気手段を設けたことを特徴とする搬送式基板処理装置。In a transportable substrate processing apparatus in which a substrate is transported horizontally and passed through a plurality of processing units, and chemical processing is performed in at least one of the plurality of processing units, and a liquid avoiding unit is provided upstream of the chemical processing unit The liquid avoiding portion is partitioned into a plurality of chambers in the substrate transport direction by at least one partition wall, and exhaust means for sucking at least one chamber excluding the most upstream chamber in the liquid avoiding portion to a negative pressure is provided. A transport type substrate processing apparatus. 前記液避け部における最上流側の室内が常圧又は陽圧に管理されている請求の範囲第１項に記載の搬送式基板処理装置。2. The transfer type substrate processing apparatus according to claim 1, wherein a chamber on the most upstream side in the liquid avoiding portion is managed at normal pressure or positive pressure. 前記液避け部が基板搬送方向で３以上の室に区画されており、前記液避け部における最上流側の室内及び最下流側の室内を除く少なくとも１つの室内が負圧に吸引される請求の範囲第１項に記載の搬送式基板処理装置。The liquid avoiding portion is partitioned into three or more chambers in the substrate transport direction, and at least one chamber other than the most upstream chamber and the most downstream chamber in the liquid avoiding portion is sucked to a negative pressure. The transfer type substrate processing apparatus according to the first item in the range. 前記液避け部が基板搬送方向で３以上の室に区画されており、前記液避け部における最上流側の室内から最下流側の室内にかけて段階的に圧力が低下する請求の範囲第１項に記載の搬送式基板処理装置。The range according to claim 1, wherein the liquid avoiding portion is partitioned into three or more chambers in the substrate transport direction, and the pressure gradually decreases from the most upstream chamber to the most downstream chamber in the liquid avoiding portion. The transfer-type substrate processing apparatus as described. 前記液避け部が基板搬送方向で３以上の室に区画されており、基板の前端が下流側の薬液処理部における薬液吐出開始位置に到達した時点で、基板の後端が前記液避け部における最上流側の室内を抜け出るように、隔壁位置が設定されている請求の範囲第１項に記載の搬送式基板処理装置。The liquid avoiding portion is partitioned into three or more chambers in the substrate transport direction, and when the front end of the substrate reaches the chemical discharge start position in the downstream chemical processing unit, the rear end of the substrate is in the liquid avoiding portion. 2. The transfer type substrate processing apparatus according to claim 1, wherein a partition wall position is set so as to exit the room on the most upstream side. 基板の前端が薬液処理部における薬液吐出開始位置に到達した時点で基板の後端が液避け部における最下流側の室内に進入するように、隔壁位置が設定されている請求の範囲第５項に記載の搬送式基板処理装置。6. The partition wall position is set such that the rear end of the substrate enters the most downstream chamber in the liquid avoiding portion when the front end of the substrate reaches the chemical discharge start position in the chemical processing section. The transfer-type substrate processing apparatus according to 1. 前記液避け部の全長が基板の長さより大であり、前記液避け部の基板入口及び出口にシャッターが装備されている請求の範囲第１項に記載の搬送式基板処理装置。The transport type substrate processing apparatus according to claim 1, wherein a total length of the liquid avoiding portion is larger than a length of the substrate, and shutters are provided at a substrate inlet and an outlet of the liquid avoiding portion.
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