JPS648646A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS648646A
JPS648646A JP16431187A JP16431187A JPS648646A JP S648646 A JPS648646 A JP S648646A JP 16431187 A JP16431187 A JP 16431187A JP 16431187 A JP16431187 A JP 16431187A JP S648646 A JPS648646 A JP S648646A
Authority
JP
Japan
Prior art keywords
bridge
pile
plate
wiring
thickly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16431187A
Other languages
Japanese (ja)
Other versions
JPH081929B2 (en
Inventor
Takashi Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16431187A priority Critical patent/JPH081929B2/en
Publication of JPS648646A publication Critical patent/JPS648646A/en
Publication of JPH081929B2 publication Critical patent/JPH081929B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To reduce wiring resistance by thickly forming a bridge pile of an air bridge as compared with a first layer wiring to increase the contact of the pile with the bridge plate of air bridge wirings. CONSTITUTION:A bridge pile 20 formed thickly as compared with a first layer wiring 1, and a bridge plate 30 formed widely in its line width are formed, and the contact area with the plate 30 wired on the pile 20 is designated by 40. Thus, since the pile 20 is thickly formed to increase its mechanical strength and the contact area 40 with the plate 20 of upper layer wiring is increased, the wiring resistance of an air bridge wiring can be reduced.
JP16431187A 1987-06-30 1987-06-30 Semiconductor device Expired - Lifetime JPH081929B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16431187A JPH081929B2 (en) 1987-06-30 1987-06-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16431187A JPH081929B2 (en) 1987-06-30 1987-06-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS648646A true JPS648646A (en) 1989-01-12
JPH081929B2 JPH081929B2 (en) 1996-01-10

Family

ID=15790726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16431187A Expired - Lifetime JPH081929B2 (en) 1987-06-30 1987-06-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH081929B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4960688A (en) * 1987-02-27 1990-10-02 Fuji Photo Film Co., Ltd. Silver halide color photographic material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4960688A (en) * 1987-02-27 1990-10-02 Fuji Photo Film Co., Ltd. Silver halide color photographic material

Also Published As

Publication number Publication date
JPH081929B2 (en) 1996-01-10

Similar Documents

Publication Publication Date Title
JPS56165371A (en) Semiconductor device
EP0399881A3 (en) Semiconductor device having two conductor layers and production method thereof
JPS648646A (en) Semiconductor device
JPS5735358A (en) Lead frame and semiconductor device using said frame
JPS542683A (en) Semiconductor chip
JPS57201062A (en) Semiconductor device
JPS5289464A (en) Semiconductor device
JPS5258469A (en) Resin-molded type semiconductor device
JPS56126971A (en) Thin film field effect element
JPS5276889A (en) Production of semiconductor device
JPS56146253A (en) Semiconductor device
JPS6473638A (en) Semiconductor integrated circuit device
JPS57169263A (en) Semiconductor device
JPS6419759A (en) Semiconductor integrated circuit
JPS5294779A (en) Semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS57201050A (en) Multilayer wiring structure
JPS54867A (en) Semiconductor device and its manufacture
JPS6453569A (en) Matrix wiring structure of image sensor
JPS5352388A (en) Semiconductor device
JPS6449243A (en) Semiconductor integrated circuit device
JPS5530883A (en) Latral directioned transistor
JPS6436123A (en) A/d converter
JPS5679455A (en) Semiconductor device
JPS5379376A (en) Semiconductor device and its production