JPH081929B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH081929B2 JPH081929B2 JP16431187A JP16431187A JPH081929B2 JP H081929 B2 JPH081929 B2 JP H081929B2 JP 16431187 A JP16431187 A JP 16431187A JP 16431187 A JP16431187 A JP 16431187A JP H081929 B2 JPH081929 B2 JP H081929B2
- Authority
- JP
- Japan
- Prior art keywords
- bridge
- wiring
- air
- pile portion
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置に係り、特に半導体基板上に
形成されるエアーブリッジ配線の機械的強度を向上させ
た配線構造に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a wiring structure in which the air bridge wiring formed on a semiconductor substrate has improved mechanical strength.
従来この種のエアーブリッジ配線構造の一例を第２図
（ａ）〜（ｆ）について説明する。An example of a conventional air bridge wiring structure of this type will be described with reference to FIGS.
第２図において、１は第１層配線、２はエアーブリッ
ジ配線の橋杭部分、３は同じく橋板部分、４は前記橋杭
部分２と橋板部分３が接触している面積、５は半導体基
板である。In FIG. 2, 1 is first layer wiring, 2 is a bridge pile portion of air bridge wiring, 3 is also a bridge board portion, 4 is an area where the bridge pile portion 2 and the bridge board portion 3 are in contact, and 5 is a semiconductor substrate. Is.
なお、第２図（ａ）〜（ｃ）はそれぞれ平面図であ
り、第２図（ａ）は第１層配線１を示し、第２図（ｂ）
は第１層配線１に橋杭部分２が形成された状態を示し、
第２図（ｃ）はエアーブリッジ配線の橋板部分３が配線
された状態を示す。また、第２図（ｄ）〜（ｆ）は、第
２図（ａ）〜（ｃ）にそれぞれ対応するＡ−Ａ′線,B−
Ｂ′線およびＣ−Ｃ′線による断面側面図である。2A to 2C are plan views, FIG. 2A shows the first layer wiring 1, and FIG. 2B is a plan view.
Shows the state where the bridge pile portion 2 is formed on the first layer wiring 1,
FIG. 2 (c) shows a state in which the bridge plate portion 3 of the air bridge wiring is wired. 2 (d) to (f) correspond to the lines A-A 'and B- in FIG. 2 (a) to (c), respectively.
It is a sectional side view by a B'line and a CC 'line.
次にエアーブリッジ配線の形成要領について説明す
る。Next, the procedure for forming the air bridge wiring will be described.
まず、半導体基板５上に第１層配線１を形成する。次
に第１層配線１上に配線幅より狭いサイズでエアーブリ
ッジ配線の橋杭部分２に相当するパターンを形成する。
その際の第１層配線１は、橋杭部分２がくる部分を通常
より太くしておく。次に、第２層上層配線である橋板部
分３をエアーブリッジの橋杭部分２の上に形成するが、
その際の配線は橋杭部分２の寸法より狭い寸法で形成す
る。First, the first layer wiring 1 is formed on the semiconductor substrate 5. Next, a pattern corresponding to the bridge pile portion 2 of the air bridge wiring is formed on the first layer wiring 1 with a size smaller than the wiring width.
At this time, the first layer wiring 1 is made thicker than usual at the portion where the bridge pile portion 2 comes. Next, the bridge plate portion 3 which is the second layer upper wiring is formed on the bridge pile portion 2 of the air bridge.
The wiring at that time is formed with a dimension smaller than the dimension of the bridge pile portion 2.
従来のエアーブリッジ配線の構造では、橋板部分３の
線幅が第１層配線１に比べて狭くなり、配線抵抗が上昇
してしまう。そのため、橋板部分３の線幅を広くする
か、または配線の厚みを厚くしなければならない。しか
し、線幅を広くしたり、厚みを厚くすると機械的強度の
問題から、橋杭部分２を太くしなければならず、最終的
には第１層配線１から設計しなおさなければならない等
の問題点があった。In the structure of the conventional air bridge wiring, the line width of the bridge plate portion 3 becomes narrower than that of the first layer wiring 1, and the wiring resistance increases. Therefore, it is necessary to widen the line width of the bridge plate portion 3 or increase the thickness of the wiring. However, if the line width is made wider or the thickness is made thicker, the bridge pile portion 2 must be made thicker due to the problem of mechanical strength, and finally the first layer wiring 1 must be redesigned. There was a point.
この発明は、上記のような問題点を解消するためにな
されたもので、第１層配線の線幅を変えずに、エアーブ
リッジ配線の配線抵抗を低減せしめた配線構造を得るこ
とを目的とする。The present invention has been made to solve the above problems, and an object thereof is to obtain a wiring structure in which the wiring resistance of the air bridge wiring is reduced without changing the line width of the first layer wiring. To do.
この発明に係るエアーブリッジ配線の配線構造は、エ
アーブリッジの橋杭部分を第１層配線より太く形成し、
この橋杭部分とエアーブリッジ配線の橋板部分との接触
を増大させたものである。In the wiring structure of the air bridge wiring according to the present invention, the bridge pile portion of the air bridge is formed thicker than the first layer wiring,
The contact between the bridge pile portion and the bridge plate portion of the air bridge wiring is increased.
この発明におけるエアーブリッジ配線の配線構造は、
エアーブリッジ橋杭部分を第１層配線より太くしたこと
から、機械的強度が向上し、この上に配線される橋板部
分の線幅を広くすることが可能になり、エアーブリッジ
配線の配線抵抗が低減される。The wiring structure of the air bridge wiring in this invention is
Since the air bridge bridge pile part is made thicker than the first layer wiring, the mechanical strength is improved, and it is possible to widen the line width of the bridge board part to be wired on this, and the wiring resistance of the air bridge wiring is increased. Will be reduced.
〔実施例〕 この発明の一実施例を第１図（ａ）〜（ｆ）について
説明する。なお、第１図の各図は、第２図の各図と同様
な図を表わしている。また、第１図における符号中、第
２図と同一のものは同一構成部分を示すものであり、20
は前記第１層配線１より太く形成した橋杭部分、30は線
幅を広く形成した橋板部分、40は前記橋杭部分20上に配
線された橋板部分30との接触面積を示すものである。[Embodiment] An embodiment of the present invention will be described with reference to FIGS. The drawings in FIG. 1 represent the same drawings as the drawings in FIG. Further, in the reference numerals in FIG. 1, the same components as those in FIG. 2 indicate the same components, and
Is a bridge pile portion formed to be thicker than the first layer wiring 1, 30 is a bridge board portion having a wide line width, and 40 is a contact area with the bridge board portion 30 wired on the bridge pile portion 20. .
なお、エアーブリッジ配線の形成要領は、第２図の従
来例と同じであるので、その説明は省略する。Since the procedure for forming the air bridge wiring is the same as that of the conventional example shown in FIG. 2, its description is omitted.
このように橋杭部分20を太く形成することにより、機
械的強度が増大するとともに、上層配線になる橋板部分
30との接触面積40が増大することから、エアーブリッジ
配線の配線抵抗を低減させることができる。By forming the bridge pile portion 20 thick in this way, the mechanical strength is increased and the bridge plate portion that becomes the upper wiring
Since the contact area 40 with 30 increases, the wiring resistance of the air bridge wiring can be reduced.
以上説明したようにこの発明は、エアーブリッジ配線
の橋杭部分を第１層配線より太くしたので、機械的強度
が増大するとともに、その上に配線される橋板部分の線
幅を広くしたり、厚くしたりすることも基本的な設計を
変更せずに容易にできる。さらに、橋杭部分と橋板部分
の接触面積が増大するので、エアーブリッジの配線抵抗
を下げることができる等の効果がある。As described above, in the present invention, the bridge pile portion of the air bridge wiring is made thicker than the first layer wiring, so that the mechanical strength is increased and the line width of the bridge board portion to be wired thereon is widened, It can be easily thickened without changing the basic design. Further, since the contact area between the bridge pile portion and the bridge plate portion is increased, the wiring resistance of the air bridge can be reduced.
第１図（ａ）〜（ｆ）はこの発明の一実施例によるエア
ーブリッジ配線を示すもので、第１図（ａ）〜（ｃ）は
平面図、第１図（ｄ）〜（ｆ）は第１図（ａ）〜（ｃ）
のＡ−Ａ′線,B−Ｂ′線およびＣ−Ｃ′線による断面側
面図、第２図（ａ）〜（ｆ）は従来例を示す第１図と同
様な平面図および断面側面図である。 図において、１は第１層配線、５は半導体基板、20は橋
杭部分、30は橋板部分、40は接触面積である。 なお、各図中の同一符号は同一または相当部分を示す。1 (a) to 1 (f) show an air bridge wiring according to an embodiment of the present invention. FIGS. 1 (a) to 1 (c) are plan views, and FIGS. 1 (d) to 1 (f). Is shown in FIGS. 1 (a) to (c).
2 is a cross-sectional side view taken along the lines AA ', BB' and CC ', and FIGS. 2A to 2F are plan views and sectional side views similar to FIG. 1 showing a conventional example. Is. In the figure, 1 is the first layer wiring, 5 is a semiconductor substrate, 20 is a bridge pile portion, 30 is a bridge plate portion, and 40 is a contact area. The same reference numerals in each drawing indicate the same or corresponding parts.
Claims (1)
され、これらの第１層配線のそれぞれに設けられた橋杭
部分に接触してエアーブリッジ配線の橋板部分が配線さ
れた配線構造において、前記橋杭部分を前記第１層配線
より太く形成し、前記橋板部分との接触面積を増大せし
めたことを特徴とする半導体装置。1. A wiring in which a required number of first layer wirings are formed on a semiconductor substrate, and a bridge board portion of an air bridge wiring is wired in contact with a bridge pile portion provided in each of these first layer wirings. In the structure, the semiconductor device is characterized in that the bridge pile portion is formed thicker than the first-layer wiring to increase a contact area with the bridge board portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16431187A JPH081929B2 (en) | 1987-06-30 | 1987-06-30 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16431187A JPH081929B2 (en) | 1987-06-30 | 1987-06-30 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS648646A JPS648646A (en) | 1989-01-12 |
| JPH081929B2 true JPH081929B2 (en) | 1996-01-10 |
Family
ID=15790726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16431187A Expired - Lifetime JPH081929B2 (en) | 1987-06-30 | 1987-06-30 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH081929B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3882391T2 (en) * | 1987-02-27 | 1993-10-28 | Fuji Photo Film Co Ltd | Color photographic silver halide material. |
-
1987
- 1987-06-30 JP JP16431187A patent/JPH081929B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS648646A (en) | 1989-01-12 |
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