JPS6484726A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6484726A
JPS6484726A JP62243103A JP24310387A JPS6484726A JP S6484726 A JPS6484726 A JP S6484726A JP 62243103 A JP62243103 A JP 62243103A JP 24310387 A JP24310387 A JP 24310387A JP S6484726 A JPS6484726 A JP S6484726A
Authority
JP
Japan
Prior art keywords
integrated circuit
wiring
resin film
circuit chip
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62243103A
Other languages
English (en)
Other versions
JP2507476B2 (ja
Inventor
Toshio Sudo
Kazuyoshi Saito
Tomoaki Takubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62243103A priority Critical patent/JP2507476B2/ja
Priority to US07/250,183 priority patent/US5021866A/en
Publication of JPS6484726A publication Critical patent/JPS6484726A/ja
Application granted granted Critical
Publication of JP2507476B2 publication Critical patent/JP2507476B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
JP62243103A 1987-09-28 1987-09-28 半導体集積回路装置 Expired - Fee Related JP2507476B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62243103A JP2507476B2 (ja) 1987-09-28 1987-09-28 半導体集積回路装置
US07/250,183 US5021866A (en) 1987-09-28 1988-09-28 Semiconductor integrated circuit apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243103A JP2507476B2 (ja) 1987-09-28 1987-09-28 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6484726A true JPS6484726A (en) 1989-03-30
JP2507476B2 JP2507476B2 (ja) 1996-06-12

Family

ID=17098840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243103A Expired - Fee Related JP2507476B2 (ja) 1987-09-28 1987-09-28 半導体集積回路装置

Country Status (2)

Country Link
US (1) US5021866A (ja)
JP (1) JP2507476B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4117761A1 (de) * 1990-06-01 1991-12-05 Toshiba Kawasaki Kk Halbleiteranordnung mit filmtraeger
US5304843A (en) * 1990-06-01 1994-04-19 Kabushiki Kaisha Toshiba Semiconductor device using film carrier
WO1996012296A1 (fr) * 1994-10-18 1996-04-25 Hitachi, Ltd. Dispositif a semi-conducteur et son procede de fabrication
JP4829881B2 (ja) * 2004-05-21 2011-12-07 ワブコ オートモーティブ ユーケー リミテッド エアドライヤ

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162896A (en) * 1987-06-02 1992-11-10 Kabushiki Kaisha Toshiba IC package for high-speed semiconductor integrated circuit device
GB8918482D0 (en) * 1989-08-14 1989-09-20 Inmos Ltd Packaging semiconductor chips
JPH042202A (ja) * 1990-04-19 1992-01-07 Sumitomo Electric Ind Ltd マイクロ波デバイス
EP0489177A4 (en) * 1990-06-26 1993-06-09 Seiko Epson Corporation Semiconductor device and method of manufacturing the same
US5534442A (en) * 1991-05-10 1996-07-09 Northern Telecom Limited Process of providing uniform photoresist thickness on an opto-electronic device
JPH0536756A (ja) * 1991-07-30 1993-02-12 Mitsubishi Electric Corp 半導体装置用テープキヤリア及びその製造方法
US5148135A (en) * 1991-09-04 1992-09-15 Raytheon Company Electronic hardware package
US5270964A (en) * 1992-05-19 1993-12-14 Sun Microsystems, Inc. Single in-line memory module
JPH06151685A (ja) * 1992-11-04 1994-05-31 Mitsubishi Electric Corp Ｍｃｐ半導体装置
US5473190A (en) * 1993-12-14 1995-12-05 Intel Corporation Tab tape
KR0141952B1 (ko) * 1994-12-19 1998-06-01 문정환 반도체 패키지 및 그 제조방법
JP3859403B2 (ja) * 1999-09-22 2006-12-20 株式会社東芝 半導体装置及びその製造方法
US7336139B2 (en) * 2002-03-18 2008-02-26 Applied Micro Circuits Corporation Flexible interconnect cable with grounded coplanar waveguide
US7145411B1 (en) * 2002-03-18 2006-12-05 Applied Micro Circuits Corporation Flexible differential interconnect cable with isolated high frequency electrical transmission line
US8847696B2 (en) * 2002-03-18 2014-09-30 Qualcomm Incorporated Flexible interconnect cable having signal trace pairs and ground layer pairs disposed on opposite sides of a flexible dielectric
TW594961B (en) * 2003-07-24 2004-06-21 Via Tech Inc Signal transmission structure
US7470864B2 (en) * 2004-03-02 2008-12-30 Via Technologies, Inc. Multi-conducting through hole structure
US9035197B2 (en) 2011-11-04 2015-05-19 International Business Machines Corporation Circuit boards with vias exhibiting reduced via capacitance
US8918991B2 (en) * 2011-11-04 2014-12-30 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Process for providing electrical connections with reduced via capacitance on circuit boards

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895435A (en) * 1974-01-23 1975-07-22 Raytheon Co Method for electrically interconnecting multilevel stripline circuitry
CA1041187A (en) * 1976-06-30 1978-10-24 Josef L. Fikart Slot transmission line coupling technique using a capacitor
ZA812893B (en) * 1980-05-12 1982-05-26 Ncr Co Integrated circuit package having a plurality of pins for providing external electrical connections
SE426894B (sv) * 1981-06-30 1983-02-14 Ericsson Telefon Ab L M Impedansriktig koaxialovergang for mikrovagssignaler
JPS5892101A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp マイクロ波回路
US4551746A (en) * 1982-10-05 1985-11-05 Mayo Foundation Leadless chip carrier apparatus providing an improved transmission line environment and improved heat dissipation
KR900001273B1 (ko) * 1983-12-23 1990-03-05 후지쑤 가부시끼가이샤 반도체 집적회로 장치
JPS61239649A (ja) * 1985-04-13 1986-10-24 Fujitsu Ltd 高速集積回路パツケ−ジ
JPH0812887B2 (ja) * 1985-04-13 1996-02-07 富士通株式会社 高速集積回路パツケ−ジ
US4835598A (en) * 1985-06-13 1989-05-30 Matsushita Electric Works, Ltd. Wiring board
JPS6230342A (ja) * 1985-07-31 1987-02-09 Nec Corp 半導体装置
CA1226966A (en) * 1985-09-10 1987-09-15 Gabriel Marcantonio Integrated circuit chip package
US4799128A (en) * 1985-12-20 1989-01-17 Ncr Corporation Multilayer printed circuit board with domain partitioning
JPH088321B2 (ja) * 1987-01-19 1996-01-29 住友電気工業株式会社 集積回路パツケ−ジ
JPS63209152A (ja) * 1987-02-25 1988-08-30 Nec Corp リ−ドフレ−ム
JPS63245952A (ja) * 1987-04-01 1988-10-13 Hitachi Ltd マルチチップモジュ−ル構造体
US4922325A (en) * 1987-10-02 1990-05-01 American Telephone And Telegraph Company Multilayer ceramic package with high frequency connections
US4899118A (en) * 1988-12-27 1990-02-06 Hughes Aircraft Company Low temperature cofired ceramic packages for microwave and millimeter wave gallium arsenide integrated circuits

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4117761A1 (de) * 1990-06-01 1991-12-05 Toshiba Kawasaki Kk Halbleiteranordnung mit filmtraeger
US5304843A (en) * 1990-06-01 1994-04-19 Kabushiki Kaisha Toshiba Semiconductor device using film carrier
WO1996012296A1 (fr) * 1994-10-18 1996-04-25 Hitachi, Ltd. Dispositif a semi-conducteur et son procede de fabrication
JP4829881B2 (ja) * 2004-05-21 2011-12-07 ワブコ オートモーティブ ユーケー リミテッド エアドライヤ

Also Published As

Publication number Publication date
US5021866A (en) 1991-06-04
JP2507476B2 (ja) 1996-06-12

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Legal Events

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