JPS64834B2 - - Google Patents
Info
- Publication number
- JPS64834B2 JPS64834B2 JP11685584A JP11685584A JPS64834B2 JP S64834 B2 JPS64834 B2 JP S64834B2 JP 11685584 A JP11685584 A JP 11685584A JP 11685584 A JP11685584 A JP 11685584A JP S64834 B2 JPS64834 B2 JP S64834B2
- Authority
- JP
- Japan
- Prior art keywords
- cladding layer
- epitaxial growth
- substrate
- layer
- upper cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005253 cladding Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11685584A JPS60260185A (ja) | 1984-06-06 | 1984-06-06 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11685584A JPS60260185A (ja) | 1984-06-06 | 1984-06-06 | 半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60260185A JPS60260185A (ja) | 1985-12-23 |
| JPS64834B2 true JPS64834B2 (de) | 1989-01-09 |
Family
ID=14697292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11685584A Granted JPS60260185A (ja) | 1984-06-06 | 1984-06-06 | 半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60260185A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212885A (ja) * | 1988-06-29 | 1990-01-17 | Nec Corp | 半導体レーザ及びその出射ビームの垂直放射角の制御方法 |
| JP3250270B2 (ja) * | 1992-09-11 | 2002-01-28 | 三菱化学株式会社 | 半導体レーザ素子及びその製造方法 |
-
1984
- 1984-06-06 JP JP11685584A patent/JPS60260185A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60260185A (ja) | 1985-12-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |