JPS6482568A - Manufacture of field-effect transistor - Google Patents
Manufacture of field-effect transistorInfo
- Publication number
- JPS6482568A JPS6482568A JP23879687A JP23879687A JPS6482568A JP S6482568 A JPS6482568 A JP S6482568A JP 23879687 A JP23879687 A JP 23879687A JP 23879687 A JP23879687 A JP 23879687A JP S6482568 A JPS6482568 A JP S6482568A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate electrode
- photo resist
- insulating film
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the contamination due to a photo resist layer buried in the hole part of an overhang structure, by adopting an overhang structure composed of different material films, and coating a gate electrode indispensable to an element and the inner surface of the overhang structure with a third insulating film. CONSTITUTION:A silicon dioxide layer 3 and a first silicon nitride layer 4 are spread on the surface of a semiinsulative semiconductor substrate 1 composed of GaAs on which an operating layer 2 is formed. After a photo resist 6 is formed on the surface of the above laminated body, an aperture part 5 is arranged at a part of the photo resist layer 6 corresponding with the position of a gate electrode of the semiconductor substrate 1. Then an overhang part 10 wherein a part of the aperture 5 is expanded in the transversal direction is formed. In order to arrange a recessed part 11 on the surface of the exposed semiconductor substrate 1, etching is slightly performed and Al is deposited for a gate electrode. Silicon nitride, silicon oxide, etc., are applicable to a third insulating film 8. The hole part of a laminated structure is filled with photo resist 9, and the third insulating film 8 and the Al layer for gate electrode metal are eliminate by isotropic etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23879687A JPS6482568A (en) | 1987-09-25 | 1987-09-25 | Manufacture of field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23879687A JPS6482568A (en) | 1987-09-25 | 1987-09-25 | Manufacture of field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482568A true JPS6482568A (en) | 1989-03-28 |
Family
ID=17035412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23879687A Pending JPS6482568A (en) | 1987-09-25 | 1987-09-25 | Manufacture of field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482568A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04252031A (en) * | 1991-01-28 | 1992-09-08 | Nec Corp | Insulating film and its formation, formation of insulating-film pattern and manufacture of semiconductor device |
-
1987
- 1987-09-25 JP JP23879687A patent/JPS6482568A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04252031A (en) * | 1991-01-28 | 1992-09-08 | Nec Corp | Insulating film and its formation, formation of insulating-film pattern and manufacture of semiconductor device |
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