KR960026221A

KR960026221A - Semiconductor device manufacturing method

Info

Publication number: KR960026221A
Application number: KR1019940039111A
Authority: KR
Inventors: 박상훈
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-12-30
Filing date: 1994-12-30
Publication date: 1996-07-22

Abstract

본 발명은 반도체 소자의 제조방법에 관한 것으로, 특히, 반도체 제조시 콘택홀을 매립하는 텅스텐 플러그를 선택적으로 형성하는 금속배선방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a metal wiring method for selectively forming a tungsten plug for filling a contact hole during semiconductor manufacturing.

종래에는 다층 금속 배선 공정에 있어서, 에스펙트 비를 줄이는 방법의 일환으로 텅스텐-플러그를 이용하였는데, 상기 텅스텐-플러그의 경우에도 에스펙트 비가 1.5 이상이 되는 콘택홀의 깊이가 서로 다른 경우에는 문제점이 발생하고, 또한 불순물 이온주입 영역에 형성되는 콘택홀 핵 형성시 어려움이 있었다.Conventionally, in the multi-layered metal wiring process, tungsten-plug is used as a method of reducing the aspect ratio. In the case of the tungsten-plug, a problem occurs when the depths of contact holes having an aspect ratio of 1.5 or more are different. In addition, there is a difficulty in forming the contact hole nucleus formed in the impurity ion implantation region.

따라서 본 발명은 질화막을 식각 정지층으로 하여 제1콘택홀을 형성하고, 제1콘택홀 측벽에 폴리 실리콘막 스페이서를 형성하여 축소된 제2콘택홀을 형성하고, 상기 제1 및 제2콘택홀을 선택적인 텅스텐막으로 형성하여 균일도가 향상된 상태로 손쉽게 형성할 수 있어서, 반도체 소자의 신뢰성 향상이 기대된다.Accordingly, in the present invention, the first contact hole is formed using the nitride film as an etch stop layer, the polysilicon film spacer is formed on the sidewalls of the first contact hole to form a reduced second contact hole, and the first and second contact holes are formed. Can be easily formed in a state where the uniformity is improved by forming a selective tungsten film, thereby improving the reliability of the semiconductor device.

Description

Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 일실시예를 나타내는 반도체 소자의 평면도.3 is a plan view of a semiconductor device showing an embodiment of the present invention.

Claims

In forming a tungsten film in semiconductor manufacturing, forming a transistor comprising a field oxide film, a gate oxide film, a gate electrode, an oxide spacer, and an impurity ion implantation region on a silicon substrate, a first insulating oxide film over the entire structure, Stacking a nitride film and a second insulating oxide film, forming a first contact hole in the second insulating oxide film by a photolithography method, depositing polysilicon and anisotropically etching the upper portion of the entire structure to form a polysilicon spacer Forming, further etching, and forming an optional tungsten film.

The method of claim 1, wherein the nitride film has a thickness of about 100 to 500 μm and is used as an etch stop layer when forming the first contact hole.

The method of claim 1, wherein the second insulating oxide film is formed thicker than the first insulating oxide film.

The method of claim 1, wherein the nitride film and the first insulating oxide film are simultaneously etched during the additional etching.

The method of claim 1, wherein a part of the second insulating oxide layer exposed during the additional etching is etched to protrude the polysilicon layer spacer.

The method of claim 1, wherein the forming of the selective tungsten film surrounds the protruding polysilicon film spacer.

※ Note: The disclosure is based on the initial application.