JPS6481361A - Manufacture of tunnel transistor - Google Patents

Manufacture of tunnel transistor

Info

Publication number
JPS6481361A
JPS6481361A JP62237395A JP23739587A JPS6481361A JP S6481361 A JPS6481361 A JP S6481361A JP 62237395 A JP62237395 A JP 62237395A JP 23739587 A JP23739587 A JP 23739587A JP S6481361 A JPS6481361 A JP S6481361A
Authority
JP
Japan
Prior art keywords
oxide film
silicon
superhigh vacuum
substrate
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62237395A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0573353B2 (enrdf_load_stackoverflow
Inventor
Masafumi Kawanaka
Junichi Sone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62237395A priority Critical patent/JPS6481361A/ja
Publication of JPS6481361A publication Critical patent/JPS6481361A/ja
Publication of JPH0573353B2 publication Critical patent/JPH0573353B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP62237395A 1987-09-24 1987-09-24 Manufacture of tunnel transistor Granted JPS6481361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62237395A JPS6481361A (en) 1987-09-24 1987-09-24 Manufacture of tunnel transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62237395A JPS6481361A (en) 1987-09-24 1987-09-24 Manufacture of tunnel transistor

Publications (2)

Publication Number Publication Date
JPS6481361A true JPS6481361A (en) 1989-03-27
JPH0573353B2 JPH0573353B2 (enrdf_load_stackoverflow) 1993-10-14

Family

ID=17014757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237395A Granted JPS6481361A (en) 1987-09-24 1987-09-24 Manufacture of tunnel transistor

Country Status (1)

Country Link
JP (1) JPS6481361A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022130A (ja) * 1988-06-14 1990-01-08 Nippon Telegr & Teleph Corp <Ntt> シリコン熱酸化膜形成方法および形成装置
WO2002073678A1 (en) * 2001-03-10 2002-09-19 Nanos Aps Method for oxidation of a silicon substrate
JP2006210564A (ja) * 2005-01-27 2006-08-10 Matsushita Electric Ind Co Ltd バイポーラトランジスタの製造方法およびそれを用いたバイポーラトランジスタ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022130A (ja) * 1988-06-14 1990-01-08 Nippon Telegr & Teleph Corp <Ntt> シリコン熱酸化膜形成方法および形成装置
WO2002073678A1 (en) * 2001-03-10 2002-09-19 Nanos Aps Method for oxidation of a silicon substrate
JP2006210564A (ja) * 2005-01-27 2006-08-10 Matsushita Electric Ind Co Ltd バイポーラトランジスタの製造方法およびそれを用いたバイポーラトランジスタ

Also Published As

Publication number Publication date
JPH0573353B2 (enrdf_load_stackoverflow) 1993-10-14

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