JPS6477164A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6477164A JPS6477164A JP23233687A JP23233687A JPS6477164A JP S6477164 A JPS6477164 A JP S6477164A JP 23233687 A JP23233687 A JP 23233687A JP 23233687 A JP23233687 A JP 23233687A JP S6477164 A JPS6477164 A JP S6477164A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- electrode
- shaped groove
- layer
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To decrease an epitaxial layer in resistance and improve a device in micronization by a method wherein a U-shaped groove is provided to an epitaxial semiconductor layer apart from a buried layer and the U-shaped groove is filled up for the formation of a Schottky barrier electrode. CONSTITUTION:A Schottky barrier diode (SBD) is constituted in such a manner as a U-shaped groove 18 is provided to an epitaxial layer 13 just under an Al electrode 16 which is so formed as to till up the U-shaped groove 18. An insulating film 19 of SiO2 is formed on the side wall of the groove 18 so as to enable the contacting area of the electrode 16 with the epitaxial layer not to be excessive. The base of the groove 18 is in contact with the Al electrode 16, and the space between the base and a buried layer 12 is as small as 0.1-0.3mum in length, consequently even if the epitaxial layer 13 is low in concentration, the epitaxial layer can be made small in resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23233687A JPS6477164A (en) | 1987-09-18 | 1987-09-18 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23233687A JPS6477164A (en) | 1987-09-18 | 1987-09-18 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6477164A true JPS6477164A (en) | 1989-03-23 |
Family
ID=16937603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23233687A Pending JPS6477164A (en) | 1987-09-18 | 1987-09-18 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6477164A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5930636A (en) * | 1996-05-13 | 1999-07-27 | Trw Inc. | Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes |
-
1987
- 1987-09-18 JP JP23233687A patent/JPS6477164A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5930636A (en) * | 1996-05-13 | 1999-07-27 | Trw Inc. | Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes |
| US6037646A (en) * | 1996-05-13 | 2000-03-14 | Trw Inc. | High-frequency GaAs substrate based schottky barrier diodes |
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