KR970018683A - Power MOSFET with buried layer structure - Google Patents
Power MOSFET with buried layer structure Download PDFInfo
- Publication number
- KR970018683A KR970018683A KR1019950031386A KR19950031386A KR970018683A KR 970018683 A KR970018683 A KR 970018683A KR 1019950031386 A KR1019950031386 A KR 1019950031386A KR 19950031386 A KR19950031386 A KR 19950031386A KR 970018683 A KR970018683 A KR 970018683A
- Authority
- KR
- South Korea
- Prior art keywords
- conductivity type
- semiconductor substrate
- power mosfet
- epitaxial layer
- buried layer
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 베리드 레이어(buried layer) 구조를 갖는 파워 모스펫(Power MOSFET)에 관한 것으로, 특히 고농도 웨이퍼 기판위에 일정한 간격을 갖는 고농도의 제1 전도형 베리드 레이어를 구비하여 온 저항(RSD)을 줄일 수 있는 파워 모스펫에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power MOSFET having a buried layer structure. In particular, the present invention relates to an on-resistance (RSD) having a high concentration of a first conducting buried layer having a predetermined interval on a high density wafer substrate. It is about power MOSFET which can be reduced.
본 발명에 따른 파워 모스펫은 고농도의 제 1전도형 반도체 기판과; 상기 반도체 기판 위에 형성된 저농도의 제 1전도형 에피택셜층과; 상기 에피택셜층 상측에 소정 간격을 갖고 형성된 적어도 한쌍의 제 2전도형 웰과;상기 제 2전도형 웰 내부 상측에 형성된 한 쌍의 제 1전도형 소오스 영역과; 상기 제 2전도형 웰과 웰 사이의 상부면에 게이트 절연층을 통하여 형성된 게이트와 상기 제 2전도형 웰 사이의 중앙부분 하측으로, 반도체 기판과 에피택셜층의 경계면에 형성된 고농도의 제 1전도형 베리드 레이어로 구성된 것을 특징으로 한다.The power MOSFET according to the present invention comprises a high concentration first conductive semiconductor substrate; A low concentration first conductivity type epitaxial layer formed on the semiconductor substrate; At least a pair of second conductivity type wells formed at a predetermined interval on the epitaxial layer; a pair of first conductivity type source regions formed on the inside of the second conductivity type wells; A high concentration first conductivity type formed at the interface between the semiconductor substrate and the epitaxial layer below the central portion between the gate formed through the gate insulating layer on the top surface between the second conductivity type well and the second conductivity well. It is characterized by consisting of a buried layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도 본 발명에 따른 파워 모스펫의 수직 구조도이다.2 is a vertical structural diagram of a power MOSFET according to the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950031386A KR970018683A (en) | 1995-09-22 | 1995-09-22 | Power MOSFET with buried layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950031386A KR970018683A (en) | 1995-09-22 | 1995-09-22 | Power MOSFET with buried layer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970018683A true KR970018683A (en) | 1997-04-30 |
Family
ID=66615511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950031386A KR970018683A (en) | 1995-09-22 | 1995-09-22 | Power MOSFET with buried layer structure |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970018683A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010108863A (en) * | 2000-05-31 | 2001-12-08 | 조영덕 | Drilling device for waste butane gas container |
-
1995
- 1995-09-22 KR KR1019950031386A patent/KR970018683A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010108863A (en) * | 2000-05-31 | 2001-12-08 | 조영덕 | Drilling device for waste butane gas container |
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| Date | Code | Title | Description |
|---|---|---|---|
| N231 | Notification of change of applicant | ||
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |