JPS6471119A - Thermal treatment equipment for semiconductor wafer - Google Patents

Thermal treatment equipment for semiconductor wafer

Info

Publication number
JPS6471119A
JPS6471119A JP62226389A JP22638987A JPS6471119A JP S6471119 A JPS6471119 A JP S6471119A JP 62226389 A JP62226389 A JP 62226389A JP 22638987 A JP22638987 A JP 22638987A JP S6471119 A JPS6471119 A JP S6471119A
Authority
JP
Japan
Prior art keywords
heaters
wafers
calorific values
heat
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62226389A
Other languages
English (en)
Other versions
JPH0744159B2 (ja
Inventor
Shigeki Hirasawa
Takuji Torii
Tomoji Watanabe
Toshihiro Komatsu
Kazuo Honma
Akihiko Sakai
Tetsuya Takagaki
Toshiyuki Uchino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62226389A priority Critical patent/JPH0744159B2/ja
Priority to DE3855871T priority patent/DE3855871T2/de
Priority to US07/242,175 priority patent/US5001327A/en
Priority to KR1019880011652A priority patent/KR920004911B1/ko
Priority to EP88114763A priority patent/EP0306967B1/en
Publication of JPS6471119A publication Critical patent/JPS6471119A/ja
Publication of JPH0744159B2 publication Critical patent/JPH0744159B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP62226389A 1987-09-11 1987-09-11 半導体ウエハの熱処理装置および熱処理方法 Expired - Fee Related JPH0744159B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62226389A JPH0744159B2 (ja) 1987-09-11 1987-09-11 半導体ウエハの熱処理装置および熱処理方法
DE3855871T DE3855871T2 (de) 1987-09-11 1988-09-09 Vorrichtung zur Durchführung einer Wärmebehandlung an Halbleiterplättchen
US07/242,175 US5001327A (en) 1987-09-11 1988-09-09 Apparatus and method for performing heat treatment on semiconductor wafers
KR1019880011652A KR920004911B1 (ko) 1987-09-11 1988-09-09 반도체 웨이퍼의 열처리 장치 및 열처리 방법
EP88114763A EP0306967B1 (en) 1987-09-11 1988-09-09 Apparatus for performing heat treatment on semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62226389A JPH0744159B2 (ja) 1987-09-11 1987-09-11 半導体ウエハの熱処理装置および熱処理方法

Publications (2)

Publication Number Publication Date
JPS6471119A true JPS6471119A (en) 1989-03-16
JPH0744159B2 JPH0744159B2 (ja) 1995-05-15

Family

ID=16844358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62226389A Expired - Fee Related JPH0744159B2 (ja) 1987-09-11 1987-09-11 半導体ウエハの熱処理装置および熱処理方法

Country Status (1)

Country Link
JP (1) JPH0744159B2 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794419A (ja) * 1993-09-20 1995-04-07 Hitachi Ltd 半導体処理装置
JPH07509345A (ja) * 1992-06-15 1995-10-12 サームテック　インコーポレイテッド 高性能水平拡散炉装置
JPH10150050A (ja) * 1996-11-13 1998-06-02 Samsung Electron Co Ltd 半導体装置製造用の加熱チャンバーの円形加熱板
JPH10154664A (ja) * 1996-11-18 1998-06-09 Samsung Electron Co Ltd 半導体製造用の拡散装置中の蒸気発生機の点火機
JP2002523909A (ja) * 1998-08-26 2002-07-30 マットソン テクノロジイ インコーポレイテッド 半導体基板の熱処理のための方法及び装置
US6793734B2 (en) * 2001-07-26 2004-09-21 F.T.L. Co., Ltd. Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices
JP2006505947A (ja) * 2002-11-05 2006-02-16 ウェーハマスターズ・インコーポレイテッド 強制対流利用型の急速加熱炉
JP2018206925A (ja) * 2017-06-02 2018-12-27 昭和電工株式会社 アニール装置及び半導体ウェハの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095917A (ja) * 1983-10-29 1985-05-29 Gijutsu Joho Kenkyusho:Kk 熱処理炉
JPS60245215A (ja) * 1984-05-21 1985-12-05 Fujitsu Ltd 縦型炉
JPS61279121A (ja) * 1985-06-05 1986-12-09 Hitachi Ltd 拡散装置
JPS62105419A (ja) * 1985-11-01 1987-05-15 Hitachi Ltd 拡散装置温度制御方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095917A (ja) * 1983-10-29 1985-05-29 Gijutsu Joho Kenkyusho:Kk 熱処理炉
JPS60245215A (ja) * 1984-05-21 1985-12-05 Fujitsu Ltd 縦型炉
JPS61279121A (ja) * 1985-06-05 1986-12-09 Hitachi Ltd 拡散装置
JPS62105419A (ja) * 1985-11-01 1987-05-15 Hitachi Ltd 拡散装置温度制御方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07509345A (ja) * 1992-06-15 1995-10-12 サームテック　インコーポレイテッド 高性能水平拡散炉装置
JPH0794419A (ja) * 1993-09-20 1995-04-07 Hitachi Ltd 半導体処理装置
JPH10150050A (ja) * 1996-11-13 1998-06-02 Samsung Electron Co Ltd 半導体装置製造用の加熱チャンバーの円形加熱板
JPH10154664A (ja) * 1996-11-18 1998-06-09 Samsung Electron Co Ltd 半導体製造用の拡散装置中の蒸気発生機の点火機
JP2002523909A (ja) * 1998-08-26 2002-07-30 マットソン テクノロジイ インコーポレイテッド 半導体基板の熱処理のための方法及び装置
JP4971541B2 (ja) * 1998-08-26 2012-07-11 マットソン テクノロジイ インコーポレイテッド 半導体基板の熱処理のための方法及び装置
US6793734B2 (en) * 2001-07-26 2004-09-21 F.T.L. Co., Ltd. Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices
JP2006505947A (ja) * 2002-11-05 2006-02-16 ウェーハマスターズ・インコーポレイテッド 強制対流利用型の急速加熱炉
JP2018206925A (ja) * 2017-06-02 2018-12-27 昭和電工株式会社 アニール装置及び半導体ウェハの製造方法

Also Published As

Publication number Publication date
JPH0744159B2 (ja) 1995-05-15

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees