JPS6468971A - Vertical field-effect transistor - Google Patents
Vertical field-effect transistorInfo
- Publication number
- JPS6468971A JPS6468971A JP62227409A JP22740987A JPS6468971A JP S6468971 A JPS6468971 A JP S6468971A JP 62227409 A JP62227409 A JP 62227409A JP 22740987 A JP22740987 A JP 22740987A JP S6468971 A JPS6468971 A JP S6468971A
- Authority
- JP
- Japan
- Prior art keywords
- source
- gate electrode
- electrode
- effect transistor
- vertical field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000012360 testing method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
PURPOSE:To manufacture the title vertical field effect transistor in high reliability causing no trouble to the high temperature reverse bias test by slightly overlapping a gate electrode with a source electrode. CONSTITUTION:The title vertical field effect transistor is composed of an N type silicon substrate 1, a well base region 2 and a base region 3 formed in the substrate 1, a source region 4, a polycrystalline silicon gate electrode 5, an interlayer insulating film 6 covering a part of the source region 4 and the surface of the polycrystalline silicon gate electrode 5 and a source aluminum electrode 7 in contact with a part of the source region 4 and removed from the gate electrode 5 excluding the overlapped part W with the insulating part. Through these procedures, the high speed switching characteristics can be displayed neither exercising the high temperature reverse bias life testing characteristics nor raising the leakage current between the source and the drain regions at high voltage by forming a bit of overlapped part W(around 1mum) of the source electrode 7 at the end of the gate electrode 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62227409A JPS6468971A (en) | 1987-09-09 | 1987-09-09 | Vertical field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62227409A JPS6468971A (en) | 1987-09-09 | 1987-09-09 | Vertical field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6468971A true JPS6468971A (en) | 1989-03-15 |
Family
ID=16860383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62227409A Pending JPS6468971A (en) | 1987-09-09 | 1987-09-09 | Vertical field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6468971A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56130455A (en) * | 1980-03-13 | 1981-10-13 | Sumitomo Metal Ind Ltd | High-tensile hot-rolled steel plate with favorable flash butt weldability and workablity |
JPS59130455A (en) * | 1982-09-03 | 1984-07-27 | ウエスタ−ン・エレクトリツク・カムパニ−,インコ−ポレ−テツド | Mos transistor integrated circuit |
JPS59151465A (en) * | 1983-02-17 | 1984-08-29 | Nissan Motor Co Ltd | Vertical type metal oxide semiconductor field-effect transistor |
JPS62150778A (en) * | 1985-12-25 | 1987-07-04 | Hitachi Ltd | Insulated-gate semiconductor device and manufacture thereof |
-
1987
- 1987-09-09 JP JP62227409A patent/JPS6468971A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56130455A (en) * | 1980-03-13 | 1981-10-13 | Sumitomo Metal Ind Ltd | High-tensile hot-rolled steel plate with favorable flash butt weldability and workablity |
JPS59130455A (en) * | 1982-09-03 | 1984-07-27 | ウエスタ−ン・エレクトリツク・カムパニ−,インコ−ポレ−テツド | Mos transistor integrated circuit |
JPS59151465A (en) * | 1983-02-17 | 1984-08-29 | Nissan Motor Co Ltd | Vertical type metal oxide semiconductor field-effect transistor |
JPS62150778A (en) * | 1985-12-25 | 1987-07-04 | Hitachi Ltd | Insulated-gate semiconductor device and manufacture thereof |
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