JPS6468971A - Vertical field-effect transistor - Google Patents

Vertical field-effect transistor

Info

Publication number
JPS6468971A
JPS6468971A JP62227409A JP22740987A JPS6468971A JP S6468971 A JPS6468971 A JP S6468971A JP 62227409 A JP62227409 A JP 62227409A JP 22740987 A JP22740987 A JP 22740987A JP S6468971 A JPS6468971 A JP S6468971A
Authority
JP
Japan
Prior art keywords
source
gate electrode
electrode
effect transistor
vertical field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62227409A
Other languages
Japanese (ja)
Inventor
Masayuki Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62227409A priority Critical patent/JPS6468971A/en
Publication of JPS6468971A publication Critical patent/JPS6468971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To manufacture the title vertical field effect transistor in high reliability causing no trouble to the high temperature reverse bias test by slightly overlapping a gate electrode with a source electrode. CONSTITUTION:The title vertical field effect transistor is composed of an N type silicon substrate 1, a well base region 2 and a base region 3 formed in the substrate 1, a source region 4, a polycrystalline silicon gate electrode 5, an interlayer insulating film 6 covering a part of the source region 4 and the surface of the polycrystalline silicon gate electrode 5 and a source aluminum electrode 7 in contact with a part of the source region 4 and removed from the gate electrode 5 excluding the overlapped part W with the insulating part. Through these procedures, the high speed switching characteristics can be displayed neither exercising the high temperature reverse bias life testing characteristics nor raising the leakage current between the source and the drain regions at high voltage by forming a bit of overlapped part W(around 1mum) of the source electrode 7 at the end of the gate electrode 5.
JP62227409A 1987-09-09 1987-09-09 Vertical field-effect transistor Pending JPS6468971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62227409A JPS6468971A (en) 1987-09-09 1987-09-09 Vertical field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62227409A JPS6468971A (en) 1987-09-09 1987-09-09 Vertical field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6468971A true JPS6468971A (en) 1989-03-15

Family

ID=16860383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62227409A Pending JPS6468971A (en) 1987-09-09 1987-09-09 Vertical field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6468971A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130455A (en) * 1980-03-13 1981-10-13 Sumitomo Metal Ind Ltd High-tensile hot-rolled steel plate with favorable flash butt weldability and workablity
JPS59130455A (en) * 1982-09-03 1984-07-27 ウエスタ−ン・エレクトリツク・カムパニ−，インコ−ポレ−テツド Mos transistor integrated circuit
JPS59151465A (en) * 1983-02-17 1984-08-29 Nissan Motor Co Ltd Vertical type metal oxide semiconductor field-effect transistor
JPS62150778A (en) * 1985-12-25 1987-07-04 Hitachi Ltd Insulated-gate semiconductor device and manufacture thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130455A (en) * 1980-03-13 1981-10-13 Sumitomo Metal Ind Ltd High-tensile hot-rolled steel plate with favorable flash butt weldability and workablity
JPS59130455A (en) * 1982-09-03 1984-07-27 ウエスタ−ン・エレクトリツク・カムパニ−，インコ−ポレ−テツド Mos transistor integrated circuit
JPS59151465A (en) * 1983-02-17 1984-08-29 Nissan Motor Co Ltd Vertical type metal oxide semiconductor field-effect transistor
JPS62150778A (en) * 1985-12-25 1987-07-04 Hitachi Ltd Insulated-gate semiconductor device and manufacture thereof

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