JPS6466972A - Heterojunction fet - Google Patents

Heterojunction fet

Info

Publication number
JPS6466972A
JPS6466972A JP22360787A JP22360787A JPS6466972A JP S6466972 A JPS6466972 A JP S6466972A JP 22360787 A JP22360787 A JP 22360787A JP 22360787 A JP22360787 A JP 22360787A JP S6466972 A JPS6466972 A JP S6466972A
Authority
JP
Japan
Prior art keywords
layer
xas
distortion relaxation
channel
2deg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22360787A
Other languages
Japanese (ja)
Other versions
JP2600708B2 (en
Inventor
Tatsuya Ohori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62223607A priority Critical patent/JP2600708B2/en
Publication of JPS6466972A publication Critical patent/JPS6466972A/en
Application granted granted Critical
Publication of JP2600708B2 publication Critical patent/JP2600708B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent electron mobility from being lowered at a low temperature, by laminating a buffer layer, a channel layer, a distortion relaxation layer and a two-dimensional electron gas (2DEG) supplying layer sequentially on a semiconductor substrate and putting a gate electrode thereon to lattice matching between the channel layer and the distortion relaxation layer. CONSTITUTION:A undoped GaAs layer of 1mum as a buffer layer 11, a undoped InxGa1-xAs(x=0.15) layer 150A as a channel layer 12, a non-doped InxAl1-xAs(k=0.15) layer 20A as a distortion relaxation layer 13 and an Si doped (1.5X10<18> cm<-3>) AlxGa1-xAs(x=0.15) layer 300A as a 2DEG supplying layer 14 are sequentially superposed on a GaAs substrate 10 and a gate electrode 1b is put thereon. Electron mobility of 77K is improved because of the distortion relaxation layer.
JP62223607A 1987-09-07 1987-09-07 Heterojunction FET Expired - Lifetime JP2600708B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62223607A JP2600708B2 (en) 1987-09-07 1987-09-07 Heterojunction FET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62223607A JP2600708B2 (en) 1987-09-07 1987-09-07 Heterojunction FET

Publications (2)

Publication Number Publication Date
JPS6466972A true JPS6466972A (en) 1989-03-13
JP2600708B2 JP2600708B2 (en) 1997-04-16

Family

ID=16800841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62223607A Expired - Lifetime JP2600708B2 (en) 1987-09-07 1987-09-07 Heterojunction FET

Country Status (1)

Country Link
JP (1) JP2600708B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294529A (en) * 1988-09-30 1990-04-05 Hitachi Ltd Semiconductor device
JPH02254731A (en) * 1989-03-28 1990-10-15 Matsushita Electric Ind Co Ltd Hetero-junction type field effect transistor
JPH0322541A (en) * 1989-06-20 1991-01-30 Sanyo Electric Co Ltd Epitaxial wafer
US5038187A (en) * 1989-12-01 1991-08-06 Hewlett-Packard Company Pseudomorphic MODFET structure having improved linear power performance at microwave frequencies
US5055891A (en) * 1990-05-31 1991-10-08 Hewlett-Packard Company Heterostructure transistor using real-space electron transfer
JPH04181743A (en) * 1990-11-16 1992-06-29 Sumitomo Electric Ind Ltd Field-effect transistor
JPH04324645A (en) * 1991-04-24 1992-11-13 Hitachi Cable Ltd Semiconductor transistor
JP2006093731A (en) * 2005-11-07 2006-04-06 Fujitsu Ltd Compound semiconductor device
CN109037323A (en) * 2017-06-09 2018-12-18 意法半导体股份有限公司 Normally-off HEMT transistor and its manufacturing method with the 2DEG channel selectively produced

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012775A (en) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol Field effect transistor
JPS613464A (en) * 1984-06-18 1986-01-09 Hitachi Ltd Semiconductor device
JPS6123364A (en) * 1984-07-11 1986-01-31 Agency Of Ind Science & Technol Field effect transistor
JPS61110469A (en) * 1984-11-02 1986-05-28 Sumitomo Electric Ind Ltd Semiconductor field effect transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012775A (en) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol Field effect transistor
JPS613464A (en) * 1984-06-18 1986-01-09 Hitachi Ltd Semiconductor device
JPS6123364A (en) * 1984-07-11 1986-01-31 Agency Of Ind Science & Technol Field effect transistor
JPS61110469A (en) * 1984-11-02 1986-05-28 Sumitomo Electric Ind Ltd Semiconductor field effect transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294529A (en) * 1988-09-30 1990-04-05 Hitachi Ltd Semiconductor device
JPH02254731A (en) * 1989-03-28 1990-10-15 Matsushita Electric Ind Co Ltd Hetero-junction type field effect transistor
JPH0322541A (en) * 1989-06-20 1991-01-30 Sanyo Electric Co Ltd Epitaxial wafer
US5038187A (en) * 1989-12-01 1991-08-06 Hewlett-Packard Company Pseudomorphic MODFET structure having improved linear power performance at microwave frequencies
US5055891A (en) * 1990-05-31 1991-10-08 Hewlett-Packard Company Heterostructure transistor using real-space electron transfer
JPH04181743A (en) * 1990-11-16 1992-06-29 Sumitomo Electric Ind Ltd Field-effect transistor
JPH04324645A (en) * 1991-04-24 1992-11-13 Hitachi Cable Ltd Semiconductor transistor
JP2006093731A (en) * 2005-11-07 2006-04-06 Fujitsu Ltd Compound semiconductor device
CN109037323A (en) * 2017-06-09 2018-12-18 意法半导体股份有限公司 Normally-off HEMT transistor and its manufacturing method with the 2DEG channel selectively produced

Also Published As

Publication number Publication date
JP2600708B2 (en) 1997-04-16

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