JPS6464263A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS6464263A
JPS6464263A JP62219136A JP21913687A JPS6464263A JP S6464263 A JPS6464263 A JP S6464263A JP 62219136 A JP62219136 A JP 62219136A JP 21913687 A JP21913687 A JP 21913687A JP S6464263 A JPS6464263 A JP S6464263A
Authority
JP
Japan
Prior art keywords
drain
region
dosage
layer
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219136A
Other languages
English (en)
Inventor
Munenari Kakumoto
Soichi Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62219136A priority Critical patent/JPS6464263A/ja
Priority to EP88114351A priority patent/EP0306039A3/en
Priority to KR1019880011336A priority patent/KR910007379B1/ko
Publication of JPS6464263A publication Critical patent/JPS6464263A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
JP62219136A 1987-09-03 1987-09-03 Semiconductor device and its manufacture Pending JPS6464263A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62219136A JPS6464263A (en) 1987-09-03 1987-09-03 Semiconductor device and its manufacture
EP88114351A EP0306039A3 (en) 1987-09-03 1988-09-02 Semiconductor device
KR1019880011336A KR910007379B1 (ko) 1987-09-03 1988-09-02 반도체장치와 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219136A JPS6464263A (en) 1987-09-03 1987-09-03 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS6464263A true JPS6464263A (en) 1989-03-10

Family

ID=16730794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219136A Pending JPS6464263A (en) 1987-09-03 1987-09-03 Semiconductor device and its manufacture

Country Status (3)

Country Link
EP (1) EP0306039A3 (ja)
JP (1) JPS6464263A (ja)
KR (1) KR910007379B1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03151645A (ja) * 1989-11-08 1991-06-27 Mitsubishi Electric Corp 化合物半導体装置の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271537A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2786307B2 (ja) * 1990-04-19 1998-08-13 三菱電機株式会社 電界効果トランジスタ及びその製造方法
KR100693230B1 (ko) * 2004-12-28 2007-03-13 변형진 파종기 및 이를 이용한 파종방법
JP2008528481A (ja) * 2005-01-25 2008-07-31 ユニバーシティー−インダストリー コーペレーション グループ オブ キュン ヒー ユニバーシティー 脳卒中及び神経変性疾患の予防及び治療ための神経保護活性を有する複合生薬材抽出物を含む組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132681A (ja) * 1983-01-20 1984-07-30 Nec Corp シヨツトキ−型電界効果トランジスタ
JPS63160280A (ja) * 1986-12-24 1988-07-04 Hitachi Ltd 砒化ガリウム半導体デバイス

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
JPS6233476A (ja) * 1985-08-06 1987-02-13 Nec Corp 電界効果トランジスタおよびその製造方法
JPS6245184A (ja) * 1985-08-23 1987-02-27 Matsushita Electric Ind Co Ltd 電界効果トランジスタおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132681A (ja) * 1983-01-20 1984-07-30 Nec Corp シヨツトキ−型電界効果トランジスタ
JPS63160280A (ja) * 1986-12-24 1988-07-04 Hitachi Ltd 砒化ガリウム半導体デバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03151645A (ja) * 1989-11-08 1991-06-27 Mitsubishi Electric Corp 化合物半導体装置の製造方法

Also Published As

Publication number Publication date
EP0306039A2 (en) 1989-03-08
EP0306039A3 (en) 1990-05-23
KR910007379B1 (ko) 1991-09-25
KR890005892A (ko) 1989-05-17

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