JPS6461952A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6461952A JPS6461952A JP62219916A JP21991687A JPS6461952A JP S6461952 A JPS6461952 A JP S6461952A JP 62219916 A JP62219916 A JP 62219916A JP 21991687 A JP21991687 A JP 21991687A JP S6461952 A JPS6461952 A JP S6461952A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate electrode
- superconducting
- strontium titanate
- electrode wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219916A JPS6461952A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219916A JPS6461952A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6461952A true JPS6461952A (en) | 1989-03-08 |
JPH0561783B2 JPH0561783B2 (ja) | 1993-09-07 |
Family
ID=16743031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62219916A Granted JPS6461952A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461952A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6474758A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Insulated gate field-effect transistor |
JPH01264242A (ja) * | 1988-04-14 | 1989-10-20 | Matsushita Electron Corp | 半導体装置 |
WO2001093336A1 (en) * | 2000-05-31 | 2001-12-06 | Motorola, Inc. | Semiconductor device and method for manufacturing the same |
US6642591B2 (en) | 2000-07-06 | 2003-11-04 | Agency Of Industrial Science And Technology | Field-effect transistor |
-
1987
- 1987-09-02 JP JP62219916A patent/JPS6461952A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6474758A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Insulated gate field-effect transistor |
JPH01264242A (ja) * | 1988-04-14 | 1989-10-20 | Matsushita Electron Corp | 半導体装置 |
WO2001093336A1 (en) * | 2000-05-31 | 2001-12-06 | Motorola, Inc. | Semiconductor device and method for manufacturing the same |
US6642591B2 (en) | 2000-07-06 | 2003-11-04 | Agency Of Industrial Science And Technology | Field-effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPH0561783B2 (ja) | 1993-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |