JPS6459968A - Optical wavelength discriminating quantum well photodetector - Google Patents
Optical wavelength discriminating quantum well photodetectorInfo
- Publication number
- JPS6459968A JPS6459968A JP62217502A JP21750287A JPS6459968A JP S6459968 A JPS6459968 A JP S6459968A JP 62217502 A JP62217502 A JP 62217502A JP 21750287 A JP21750287 A JP 21750287A JP S6459968 A JPS6459968 A JP S6459968A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- quantum well
- type
- mqw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a waveguide type quantum well photodetector with an optical wavelength discriminating function which can discriminate a number of wavelengths by a method wherein the forbidden band widths of the photodetector are controlled by varying the surface passivation conditions. CONSTITUTION:An n-type Al0.3Ga0.7As layer 2, a MQW(multilayer quantum well) 3, a p-type Al0.3Ga0.7As layer 4 and a p-type GaAs contact layer 5 are successively built up on an n<+>type GaAs substrate 1 to form a layer structure. The layer structure is divided into three regions I, II and III. An AIN layer 9 is formed on the region II as a passivation film. As SiO2 layer 10 is formed on the regions I and II so as to cover the AIN layer 9. Then, the layer structure is subjected to heating for 2.5-3 hours in a sealed tube under an arsenic pressure of 100Torr and a temperature of 850 deg.C. As a result, the passivation effect of the arsenic pressure functions remarkably in the region III to which the arsenic pressure is directly applied and PL of the MQW is maintained at about 820nm. On the other hand, by the heat treatment, PL of the MQW under the passivation film is shifted to 750nm and 800nm in the region I and the region II. As a result, the respective forbidden band widths E1, E2 and E3 corre sponding to the regions I, II and III are 750nm, 800nm and 820nm in wavelength equiva lent respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62217502A JPS6459968A (en) | 1987-08-31 | 1987-08-31 | Optical wavelength discriminating quantum well photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62217502A JPS6459968A (en) | 1987-08-31 | 1987-08-31 | Optical wavelength discriminating quantum well photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6459968A true JPS6459968A (en) | 1989-03-07 |
Family
ID=16705240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62217502A Pending JPS6459968A (en) | 1987-08-31 | 1987-08-31 | Optical wavelength discriminating quantum well photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6459968A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237411A (en) * | 2000-02-21 | 2001-08-31 | Sony Corp | Optoelectric integrated circuit device |
| WO2017013924A1 (en) * | 2015-07-22 | 2017-01-26 | ソニーセミコンダクタソリューションズ株式会社 | Imaging device and method for manufacturing same |
-
1987
- 1987-08-31 JP JP62217502A patent/JPS6459968A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237411A (en) * | 2000-02-21 | 2001-08-31 | Sony Corp | Optoelectric integrated circuit device |
| WO2017013924A1 (en) * | 2015-07-22 | 2017-01-26 | ソニーセミコンダクタソリューションズ株式会社 | Imaging device and method for manufacturing same |
| US10304884B2 (en) | 2015-07-22 | 2019-05-28 | Sony Semiconductor Solutions Corporation | Imaging device and method for manufacturing the same |
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