JPS5688381A - Manufacture of semiconductor photodetector - Google Patents
Manufacture of semiconductor photodetectorInfo
- Publication number
- JPS5688381A JPS5688381A JP16550479A JP16550479A JPS5688381A JP S5688381 A JPS5688381 A JP S5688381A JP 16550479 A JP16550479 A JP 16550479A JP 16550479 A JP16550479 A JP 16550479A JP S5688381 A JPS5688381 A JP S5688381A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- lambda
- represented
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Abstract
PURPOSE:To obtain a reliable photodetecting surface of the semiconductor photodetector by using an Si3N4 film when a reflection preventive film is formed on the photodetecting surface of the photodetector having a P-N junction and forming the thickness thereof at lambda/4n2 where the refractive index of the semiconductor substrate is represented by the n2 and the wavelength of the light is represented by lambda, and avoiding the contamination of the boundary. CONSTITUTION:An N<-> type layer 12 is epitaxially grown on an N<+> type Si substrate 13, the entire surface is covered with an SiO2 film 16, a window is opened thereat, a P type layer 11 is diffused in the substrate 13, and a photodetector is thus formed. It is then heat treated in a dry O2 at 1,000 deg.C, an SiO2 film 38 integral with the film 16 is formed on the layer 11, is patterned, and the peripheral edge of the layer 11 is covered with the film 38 continuous to the layer 16. Thereafter, when the reflection preventive film 34 formed of Si3N4 is formed by a CVD process at low temperature such as 800 deg.C on the exposed layer 11, the thickness of the film is specified to lambda/4n2 where the refractive index of the Si is represented by n2 and the incident light wavelenght is represented by lambda. Then, the film 38 and the film 34 formed thereon are removed by plasma etching using CF4 gas, and aluminum electrode lead wire 35 is mounted on the exposed layer 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16550479A JPS5688381A (en) | 1979-12-21 | 1979-12-21 | Manufacture of semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16550479A JPS5688381A (en) | 1979-12-21 | 1979-12-21 | Manufacture of semiconductor photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5688381A true JPS5688381A (en) | 1981-07-17 |
| JPS6244707B2 JPS6244707B2 (en) | 1987-09-22 |
Family
ID=15813641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16550479A Granted JPS5688381A (en) | 1979-12-21 | 1979-12-21 | Manufacture of semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688381A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61129880A (en) * | 1984-11-28 | 1986-06-17 | Fujitsu Ltd | Semiconductor photodetector |
| US4606115A (en) * | 1985-05-14 | 1986-08-19 | Motorola, Inc. | Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings |
-
1979
- 1979-12-21 JP JP16550479A patent/JPS5688381A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61129880A (en) * | 1984-11-28 | 1986-06-17 | Fujitsu Ltd | Semiconductor photodetector |
| US4606115A (en) * | 1985-05-14 | 1986-08-19 | Motorola, Inc. | Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244707B2 (en) | 1987-09-22 |
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