JPS6459967A - Manufacture of semiconductor photodetector - Google Patents
Manufacture of semiconductor photodetectorInfo
- Publication number
- JPS6459967A JPS6459967A JP62218224A JP21822487A JPS6459967A JP S6459967 A JPS6459967 A JP S6459967A JP 62218224 A JP62218224 A JP 62218224A JP 21822487 A JP21822487 A JP 21822487A JP S6459967 A JPS6459967 A JP S6459967A
- Authority
- JP
- Japan
- Prior art keywords
- guard ring
- relieved
- curvature
- exposure
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To form a guard ring with a relieved curvature and free from alignment discrepancy by one photoresist process and one ion implantation process by a method wherein the thickness of a mask for ion implantation is made to be thicker toward the outer circumference. CONSTITUTION:After an SiO2 film 2 is formed on an n-type InP layer 1, a photoresist layer 3 is applied. Then a guard ring pattern is exposed to an electron beam 4. At that time, the rate of the exposure is gradually reduced toward the outer circumference. After that, the photoresist film of the part intensely exposed is removed by development and the difference in level of the photoresist layer is formed corresponding to the rate the exposure in the part where the rate of the exposure is varied. Further, after an aperture is formed by removing the exposed SiO2 film, Be<+> ions 5 are implanted with the photoresist layer and the remaining SiO2 film as a mask for implantation. Finally, by annealing, a guard ring 10 with a relieved curvature is obtained in the InP layer 1. Thus, the guard ring with the relieved curvature can be formed by one ion implantation process and a local breakdown caused by the alignment discrepancy can be avoided.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62218224A JPS6459967A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62218224A JPS6459967A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor photodetector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459967A true JPS6459967A (en) | 1989-03-07 |
Family
ID=16716557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62218224A Pending JPS6459967A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor photodetector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459967A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011204873A (en) * | 2010-03-25 | 2011-10-13 | On Semiconductor Trading Ltd | Semiconductor device and method of manufacturing the same |
-
1987
- 1987-08-31 JP JP62218224A patent/JPS6459967A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011204873A (en) * | 2010-03-25 | 2011-10-13 | On Semiconductor Trading Ltd | Semiconductor device and method of manufacturing the same |
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