JPS6459967A - Manufacture of semiconductor photodetector - Google Patents

Manufacture of semiconductor photodetector

Info

Publication number
JPS6459967A
JPS6459967A JP62218224A JP21822487A JPS6459967A JP S6459967 A JPS6459967 A JP S6459967A JP 62218224 A JP62218224 A JP 62218224A JP 21822487 A JP21822487 A JP 21822487A JP S6459967 A JPS6459967 A JP S6459967A
Authority
JP
Japan
Prior art keywords
guard ring
relieved
curvature
exposure
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62218224A
Other languages
Japanese (ja)
Inventor
Atsuhiko Kusakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62218224A priority Critical patent/JPS6459967A/en
Publication of JPS6459967A publication Critical patent/JPS6459967A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To form a guard ring with a relieved curvature and free from alignment discrepancy by one photoresist process and one ion implantation process by a method wherein the thickness of a mask for ion implantation is made to be thicker toward the outer circumference. CONSTITUTION:After an SiO2 film 2 is formed on an n-type InP layer 1, a photoresist layer 3 is applied. Then a guard ring pattern is exposed to an electron beam 4. At that time, the rate of the exposure is gradually reduced toward the outer circumference. After that, the photoresist film of the part intensely exposed is removed by development and the difference in level of the photoresist layer is formed corresponding to the rate the exposure in the part where the rate of the exposure is varied. Further, after an aperture is formed by removing the exposed SiO2 film, Be<+> ions 5 are implanted with the photoresist layer and the remaining SiO2 film as a mask for implantation. Finally, by annealing, a guard ring 10 with a relieved curvature is obtained in the InP layer 1. Thus, the guard ring with the relieved curvature can be formed by one ion implantation process and a local breakdown caused by the alignment discrepancy can be avoided.
JP62218224A 1987-08-31 1987-08-31 Manufacture of semiconductor photodetector Pending JPS6459967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62218224A JPS6459967A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62218224A JPS6459967A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS6459967A true JPS6459967A (en) 1989-03-07

Family

ID=16716557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62218224A Pending JPS6459967A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS6459967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204873A (en) * 2010-03-25 2011-10-13 On Semiconductor Trading Ltd Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204873A (en) * 2010-03-25 2011-10-13 On Semiconductor Trading Ltd Semiconductor device and method of manufacturing the same

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