JPS6459832A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6459832A
JPS6459832A JP21666787A JP21666787A JPS6459832A JP S6459832 A JPS6459832 A JP S6459832A JP 21666787 A JP21666787 A JP 21666787A JP 21666787 A JP21666787 A JP 21666787A JP S6459832 A JPS6459832 A JP S6459832A
Authority
JP
Japan
Prior art keywords
wiring part
mask
dummy
during
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21666787A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0583176B2 (OSRAM
Inventor
Tatsuya Hirozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP21666787A priority Critical patent/JPS6459832A/ja
Priority to KR1019880011034A priority patent/KR910010219B1/ko
Publication of JPS6459832A publication Critical patent/JPS6459832A/ja
Publication of JPH0583176B2 publication Critical patent/JPH0583176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
JP21666787A 1987-08-31 1987-08-31 Manufacture of semiconductor device Granted JPS6459832A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP21666787A JPS6459832A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device
KR1019880011034A KR910010219B1 (ko) 1987-08-31 1988-08-30 반도체장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21666787A JPS6459832A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS6459832A true JPS6459832A (en) 1989-03-07
JPH0583176B2 JPH0583176B2 (OSRAM) 1993-11-25

Family

ID=16692039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21666787A Granted JPS6459832A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device

Country Status (2)

Country Link
JP (1) JPS6459832A (OSRAM)
KR (1) KR910010219B1 (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0683035A (ja) * 1993-06-28 1994-03-25 Seiko Epson Corp フレキシブル回路基板用マスク構造
US5436095A (en) * 1991-07-11 1995-07-25 Hitachi, Ltd. Manufacturing method or an exposing method for a semiconductor device for a semiconductor integrated circuit device and a mask used therefor
EP1043626A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. A method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof
US6235836B1 (en) 1995-11-28 2001-05-22 Hyundai Electronics Industries Co., Ltd. Vinyl 4-t-butoxycarbonyloxbenzal-vinyl alcohol-vinylacetate copolymer and preparation method thereof
JP2024160908A (ja) * 2023-05-04 2024-11-15 ▲き▼邦科技股▲分▼有限公司 フレキシブル基板の配線構造

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3085259B2 (ja) * 1997-09-17 2000-09-04 日本電気株式会社 露光パターン及びその発生方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281328A (ja) * 1986-05-30 1987-12-07 Nec Corp 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281328A (ja) * 1986-05-30 1987-12-07 Nec Corp 半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436095A (en) * 1991-07-11 1995-07-25 Hitachi, Ltd. Manufacturing method or an exposing method for a semiconductor device for a semiconductor integrated circuit device and a mask used therefor
JPH0683035A (ja) * 1993-06-28 1994-03-25 Seiko Epson Corp フレキシブル回路基板用マスク構造
US6235836B1 (en) 1995-11-28 2001-05-22 Hyundai Electronics Industries Co., Ltd. Vinyl 4-t-butoxycarbonyloxbenzal-vinyl alcohol-vinylacetate copolymer and preparation method thereof
US6559228B2 (en) 1995-11-28 2003-05-06 Hyundai Electronics Industries Co. Ltd. Vinyl 4-t-butoxycarbonyloxybenzal-vinyl 4-hydroxybenzal-vinyl alcohol-vinyl acetate copolymer
EP1043626A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. A method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof
JP2024160908A (ja) * 2023-05-04 2024-11-15 ▲き▼邦科技股▲分▼有限公司 フレキシブル基板の配線構造

Also Published As

Publication number Publication date
KR910010219B1 (ko) 1991-12-21
JPH0583176B2 (OSRAM) 1993-11-25
KR890004394A (ko) 1989-04-21

Similar Documents

Publication Publication Date Title
JPS5252582A (en) Device and production for semiconductor
JPS5224478A (en) Semiconductor device manufacturing process
JPS6459832A (en) Manufacture of semiconductor device
JPS54101274A (en) Manufacture for semiconductor device
JPS51136289A (en) Semi-conductor producing
JPS5243370A (en) Method of forming depression in semiconductor substrate
JPS53120383A (en) Production of semiconductor device
JPS5363877A (en) Production of semiconductor device
JPS6417463A (en) Image reader
JPS5243385A (en) Process for production of semiconductor integrated circuit
JPS5521131A (en) Semiconductor device
JPS5275279A (en) Packaging structure for semiconductor devices
JPS51123086A (en) Semicanductor device and its production process
JPS52106681A (en) Etching method
JPS6411399A (en) Etching of thin film pattern
JPS6446932A (en) Manufacture of semiconductor device
JPS5732639A (en) Production of semiconductor device
JPS51118369A (en) Manufacturing process for simiconduator unit
JPS522293A (en) Method of formig wiring layer
JPS52147084A (en) Production of semiconductor device
JPS5249771A (en) Process for production of semiconductor device
JPS5248976A (en) Process for production of semiconductor device
JPS53108773A (en) Production of semiconductor device
JPS5260071A (en) Production of semiconductor device
JPS5273680A (en) Production of semiconductor device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees